Infineon XENSIV BGT60LTR11AIP User manual

Application Note Please read the Important Notice and Warnings at the end of this document
www.infineon.com page 1 of 22 2021-07-29
AN608
XENSIV™BGT60LTR11AIP shield
60 GHz radar system platform
Board version 2.0
About this document
Scope and purpose
This application note describes the function, circuitry, and performance of the 60 GHz radar BGT60LTR11AIP
shield. The shield provides the supporting circuitry to the on-board BGT60LTR11AIP MMIC, Infineon’s 60 GHz
radar chipset with Antenna in Package (AIP). In addition to the autonomous mode configuration, the shield offers
a digital interface for configuration and transfer of the acquired radar data to a microcontroller board, e.g. Radar
Baseboard MCU7.
Intended audience
This document is intended for anyone working with Infineon’s XENSIV™ 60 GHz radar system platform.
Disclaimer
The platform serves as a demonstrator to perform simple motion sensing. The test data in this document
shows typical performance of demonstrator. However, board performance may vary depending on the PCB
manufacturer, specific design rules they may impose and components they may use.

Application Note 2 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Introduction
Table of contents
About this document....................................................................................................................... 1
Table of contents............................................................................................................................ 2
1Introduction .......................................................................................................................... 3
1.1 Overview..................................................................................................................................................3
1.2 Key features and system benefits...........................................................................................................4
2System specifications............................................................................................................. 5
2.1 BGT60LTR11AIP shield parameters........................................................................................................5
2.2 Typical current consumption .................................................................................................................5
3Hardware description............................................................................................................. 7
3.1 Overview..................................................................................................................................................7
3.2 BGT60LTR11AIP MMIC.............................................................................................................................8
3.3 Sensor supply........................................................................................................................................10
3.4 Crystal....................................................................................................................................................10
3.5 External capacitors................................................................................................................................11
3.6 Connectors ............................................................................................................................................11
3.7 EEPROM .................................................................................................................................................12
3.8 LEDs and level shifting ..........................................................................................................................13
3.9 MMIC operation modes and settings....................................................................................................14
3.10 Layer-stack up and routing...................................................................................................................15
4Autonomous (pulse mode) operation ......................................................................................16
5References ...........................................................................................................................20
Revision history.............................................................................................................................21

Application Note 3 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Introduction
1Introduction
1.1 Overview
The BGT60LTR11AIP MMIC is a fully integrated microwave motion sensor including Antennas in Package (AIP) as
well as built-in motion and direction of motion detectors. A state machine enables operation of the MMIC
without any external microcontroller. In its autonomous mode, it detects a human target up to 7 m with a low
power consumption. These features make the small sized radar solution a compelling smart and cost-effective
replacement for conventional PIR sensors in low power or battery-powered applications.
The BGT60LTR11AIP shield demonstrates the features of the BGT60LTR11AIP MMIC and gives the user a “plug
and play” radar solution. The MMIC is designed to operate as a Doppler motion sensor in the 60 GHz ISM-band.
Two integrated detectors provide two digital output signals –one indicating motion and the other indicating
the direction of motion (approaching or departing) of a human target.
The MMIC has four quad-state (QS1-4) input pins that give the performance parameters flexibility even when it
is running in autonomous mode. These pins are used for configuration of the chip as explained in section 3.9. In
autonomous mode, detection threshold or sensitivity (set via QS2) has 16 different levels to fulfill a
configurable detection range from 0.5 m up to 7 m with a typical human target Radar Cross Section (RCS). Hold
time is also configurable in 16 levels in autonomous mode via QS3, which allows detection status to be held up
to 30 minutes (see Table 8). Duty-cycle settings are also configurable to allow a lower power consumption.
The MMIC also supports a SPI mode by changing the operation mode with QS1 pin (see Table 5). In this mode,
the radar raw data can be extracted from BGT60LTR11AIP for signal processing on PC or an external
microcontroller unit (MCU) using SPI. This sampled radar data can be used for developing customized
algorithms. The shield can also be attached to an Arduino MKR board or an Infineon Radar Baseboard MCU7.
Infineon’s Toolbox supports this platform with a demonstration software and a Radar Graphical User Interface
(Radar GUI) to display and analyze acquired data in time and frequency domain.
This application note focuses on the BGT60LTR11AIP shield. Detailed documentation on the Radar Baseboard
MCU7 can be found in corresponding application note.
Figure 1 BGT60LTR11AIP shield using BGT60LTR11AIP MMIC

Application Note 4 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Introduction
1.2 Key features and system benefits
The BGT60LTR11AIP MMIC is a fully integrated microwave motion sensor including antenna elements,
configurable built-in detectors and a state machine allowing fully autonomous operation of the device. The
chip is designed to operate as a Doppler motion sensor. In the fully autonomous mode, the integrated
detectors deliver digital outputs indicating motion and direction of motion. An integrated frequency divider
with a Phase-Locked Loop (PLL) provides VCO frequency stabilization. The MMIC supports multiple operation
modes: autonomous, SPI mode and SPI mode with external clock. The different modes can be selected via QS1
pin (Section 3.9).
The BGT60LTR11AIP shield is optimized for fast prototyping designs and system integrations as well as initial
product feature evaluations. In addition, the sensor can be integrated into systems like laptops, tablets, TVs,
speakers etc. to ‘wake’ them up based on motion (or rather direction of motion) detection, put them to sleep or
auto-lock when no motion is detected for a defined amount of time. This way, it can be a smart power saving
feature for these devices and might also eliminate the need for key-word based activation of systems. Radar
sensors offer the possibility to hide them inside the end product since they operate through non-metallic
materials. Therefore, it enables a seamless integration of technology in our day-to-day lives.
Some key features of the BGT60LTR11AIP shield are as follows:
•Form factor of 20 mm x 6.25 mm for the BGT60LTR11AIP shield
•Features an AIP (Antenna-In-Package) MMIC of small size (6.7 mm x 3.3 mm x 0.56 mm), thereby
eliminating antenna design complexity at the user end
•Detects motion and direction of movement (approaching or retreating) for a human target
•Works standalone (autonomous mode) or also with SPI mode to interface with an external
microcontroller
•Configurable settings like operation mode, detector threshold, hold time, operating frequency
•Low power consumption
•Option to solder onto other PCBs such as Arduino MKR for extra flexibility

Application Note 5 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
System specifications
2System specifications
2.1 BGT60LTR11AIP shield parameters
Table 1 lists the various parameters of the BGT60LTR11AIP shield.
Table 1 BGT60LTR11AIP shield specifications
Parameter
Unit
Min.
Typ.
Max.
Comments
System performance
Maximum detection range
m
–
5
7
Typ. motion detection range for
human target at high sensitivity (in
both E and H plane orientation)
Power supply
Supply voltage
V
1.5
3.3
5.0
Antenna characteristics (measured)
Antenna type
1 x 1
Antenna in Package (AIP)
Horizontal –3 dB beam width
Degrees
80
At frequency = 61.25 GHz
Elevation –3 dB beam width
Degrees
80
At frequency = 61.25 GHz
2.2 Typical current consumption
The shield can be powered directly through the castellated holes, VIN and GND (Figure 3 –autonomous mode)
on the sides of the shield or through a baseboard platform like the Radar Baseboard MCU7 (Figure 4- SPI mode).
The current consumption of the BGT60LTR11AIP MMIC can be optimized by configuring pulse width and Pulse
Repetition Time (PRT).
Table 2 Typical current consumption of the BGT60LTR11AIP shield (pulse mode)
Pulse width (µs)
Pulse Repetition Time (PRT) (µs)
Current consumption (mA)
5
250
6.05
5
500 (default)
3.21
5
1000
1.76
5
2000
1.03

Application Note 6 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
System specifications
Figure 2 Current consumption of shield with pulse width = 5 µs and PRT = 500 µs

Application Note 7 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Hardware description
3Hardware description
This section presents an overview of the shield’s hardware building blocks, such as BGT60LTR11AIP MMIC,
power supply, crystal, and board interfaces.
3.1 Overview
The BGT60LTR11AIP shield is a very small PCB of 20 x 6.25 mm size. Mounted on top of the PCB is a
BGT60LTR11AIP (U1 in Figure 2), Infineon’s 60 GHz radar sensor with integrated antennas. The antennas are
integrated into the chip package; therefore, the PCB can be manufactured using a standard FR4 laminate. The
bottom side of the shield has the connectors to the Radar Baseboard MCU7 [1] (P1 and P2 in Figure 2). The
castellated holes on the edges of the PCB provide additional access to the detector outputs and power supply
signals of the shield. By using these castellated holes and removing P1 and P2, the BGT60LTR11AIP shield can be
soldered onto other PCBs. On the top side of the shield is a marker that must be aligned with the marker on the
radar baseboard MCU7 for correct alignment, as shown in Figure 4.
20 mm
6.25 mm
Top side Bottom side
Sensor connectors (P1 and P2)
Castellated holes
Figure 3 Top and bottom view of BGT60LTR11AIP shield
Radar system platform
Markers for
correct
alignment
Figure 4 Markers on Radar Baseboard MCU7 and BGT60LTR11AIP shield for alignment

Application Note 8 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Hardware description
BGT60LTR11AiP MMIC
38.4 MHz
quartz
EEPROM
LED1
LED2
Connectors to Radar Baseboard MCU7
2
1.8V or 3.3V LDO
1.5V_RF
1.5V_PLL
SPI
IRQ
T_Det
P_Det
IFI
IFQ
Castellated Holes
5
3.3V
Vin
Vin 1.5V_RF
1.5V_RF
Vin
2
Figure 5 Block diagram of the BGT60LTR11AIP shield
The block diagram in Figure 5 depicts the configuration of the shield. When the shield is plugged into the Radar
Baseboard MCU7, the MMIC’s supplies are initially deactivated. Only the EEPROM is powered. The MCU reads the
content of the EEPROM’s memory to determine which shield is plugged into the connectors. Only when the shield
has been correctly identified, are the MMIC’s supplies activated.
Communication with the MMIC is mainly performed via a Serial Peripheral Interface (SPI). The BGT_RTSN allows
the MCU to perform a hardware reset of the MMIC. The BGT_SELECT and BGT_RTSN lines of the SPI are also pulled
up with 10 kΩ resistors. The interrupt request (IRQ) line can be used to signal the MCU when new data needs to
be fetched.
3.2 BGT60LTR11AIP MMIC
The BGT60LTR11AIP MMIC (Figure 7) serves as the main element on the BGT60LTR11AIP shield. The MMIC has
one transmit antennaand one receive antenna integrated into the package. The package dimensions are 6.7 mm
(± 0.1 mm) x 3.3 mm (± 0.1 mm) x 0.56 mm (± 0.05 mm), as illustrated in Figure 7 and Figure 8.
The MMIC has an integrated Voltage Controlled Oscillator (VCO) for high-frequency signal generation. The
transmit section consists of a Medium Power Amplifier (MPA) with configurable output power, which can be
controlled via the SPI.
The chip features a low-noise quadrature receiver stage. The receiver uses a Low Noise Amplifier (LNA) in front
of a quadrature homodyne down-conversion mixer in order to provide excellent receiver sensitivity. Derivedfrom
the internal VCO signal, an RC Poly-Phase Filter (PPF) generates quadrature LO signals for the quadrature mixer.
The Analog Base Band (ABB) unit consists of an integrated sample and hold circuit for low-power duty-cycled
operation followed by anexternally configurable high-pass filter, a Variable Gain Amplifier (VGA) stage and a low-
pass filter.

Application Note 9 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Hardware description
The integrated target detector circuits in the MMIC indicate the detection of movement in front of the radar and
the direction of movement with two digital signals (BGT_TARGET_DET and BGT_PHASE_DET). See section 3.8 for
more details. The detector circuit offers a user-configurable hold-time for maximum flexibility.
Trafo
PS
PPF
Trafo
Power
Det.
HPFS&H
HPF LPF
LPF
PGA
PGA
MPA
LNA
f-Div
f-Div
S&H
Osc. PLL
TX Antenna RX Antenna
SPI Sensor
ADC Main
Controller
Mode
Select
SPIDO
SPICLK
SPICS
SPIRSTN
SPIDI
QS1
QS4 QS2 QS3
Div_O
Xosc_Ao
Xosc_Ai
PLL_Trig
IFIAo
IFIAox
Build-in
Detector
TDet
PDet
IFIAix
IFIAi
IFI
IFQ
IFQAo
IFQAox
IFQAix
IFQAi
Figure 6 BGT60LTR11AIP MMIC block diagram
Figure 7 Package outline and pin-signal assignment of the BGT60LTR11AIP MMIC
VDD_RF
A2
QS3
B1 PDET D1
QS4
M1
SPIDO
B6
VTUNE
C1
IFQ K1
TDET E1
PLL_TRIG
G1
VDD_PLL
M2
QS1
M6
VDD_RF
B2
SPIDI
B5
GND M4
GND N4
GND N6
GND N1
GND B3
GND A3
IFQAI
M5
GND B4
GND N3
XOSC_AI
J1
SPIRST_N
A5
GND A6
DIV_O F1
GND A1
IFI L1
XOSC_AO
H1
VDD_PLL
N2
GND A4
QS2
N5
GND M3
SPICLK
C6
SPICS
D6
IFIAO E6
IFIAOX F6
IFIAIX
G6 IFIAI
H6
IFQAO J6
IFQAOX K6
IFQAIX
L6
U1
BGT60LTR11AiP
Xosc_ao
Xosc_ai
QS1
QS2
QS3
QS4
BGT_SCK_1.5_A
BGT_SELECT_1.5_A
BGT_MISO_1.5_A
BGT_MOSI_1.5_A
BGT_RTSN_1.5_A
BGT_PLL_TRIG_1.5
BGT_VTUNE
VTUNE
BGT_TARGET_DET
BGT_DIV
BGT_PHASE_DET
GND
VDD_RF
VDD_PLL
IF1i_P
IF1i_N
IF1q_P
IFI
IFQ
IFQx_PostLPF
IFQ_PostLPF
IFIx_PostLPF
IFI_PostLPF
IF1q_N

Application Note 10 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Hardware description
Figure 8 Top and side view of the BGT60LTR11AIP MMIC package –all dimensions in mm
3.3 Sensor supply
Since radar sensors are very sensitive to supply voltage fluctuations or cross-talk between different supply
domains, a low-noise power supply as well as properly decoupled supply rails are vital. The Radar Baseboard
MCU7 provides a low-noise supply. Figure 9 depicts the schematics of the low-pass filters employed to decouple
the supplies of the different power rails in the BGT60LTR11AIP shield. High attenuation of voltage fluctuations in
the MHz regime is provided by ferrite beads (L1, L3 and L5). For example, the SPI which runs up to 50 MHz, induces
voltage fluctuations on the digital domain, which would then couple into and interfere with the analog domain
without the decoupling filters. The ferrite beads are chosen such that they can handle the maximum current of
the sensor with a low DC resistance (below 0.25 Ω) and an inductance as high as possible. The high inductance
will reduce the cut-off frequency of the low-pass filter, which provides better decoupling for lower frequencies.
Figure 9 Schematics of the sensor supply and low-pass filters
3.4 Crystal
The MMIC requires an oscillator source with a stable reference clock providing low phase jitter and low phase
noise. The oscillator is integrated inside the MMIC. This saves current consumption, as crystal oscillators
consume only a few milli-amperes and run continuously. The BGT60LTR11AIP shield uses a 38.4 MHz crystal
oscillator, as shown in Figure 10.
1V5Sensor1V8Sensor L1
MMZ0603S121HT000
Vin VDD_RF
3V3Sensor
1V5_LDO
L3
DNP
GND 2
OUT 1 IN
4
EN
3
EPAD
5
U2
NCP163AMX150TBG
C1
4.7µF C2
100nF
GND
R24
0
C3
4.7µF C4 100nF
GND GND
3V3 L5
MMZ0603S121HT000 GND VDD_PLL
C7
100nF
GND
GND
R23
0
R22
DNP

Application Note 11 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Hardware description
Figure 10 The crystal circuit on the BGT60LTR11AIP shield
3.5 External capacitors
The BGT60LTR11AIP MMIC performs a sample and hold operation for lower power consumption. The capacitors
between sample and hold and the high-pass filter are external. C10, C11, C14 and C15 are 5.6 nF capacitors
used as “hold”capacitors for the sample and hold circuitry. They can be configured for different pulse width
settings as shown in Table 3. C8, C9, C12 and C13 are the DC blocking capacitors. They are 10 nF to get a high-
pass of 4 Hz. It is not recommended to use higher values as it will affect the Analog Base Band (ABB) settling
time. The DC blocking capacitors are important because the mixer output has a different DC voltage than the
internal ABB.
Figure 11 External capacitors
Table 3 Recommended S&H capacitor values (C10, C11, C14 and C15) for different pulse width
values
Pulse width (µs)
S&H capacitor value (nF)
3
4.7
4
5.6
5 (default)
5.6 (default)
10
10
3.6 Connectors
The BGT60LTR11AIP shield can be connected to an MCU board, like the Radar Baseboard MCU7 with the P1 and
P2 connectors.Visible on the top and bottom side of the PCB are the castellated holes (P3 and P4). TD and PD
pins of the castellated holes correspond to the internal detector outputs of the MMIC.
The shield contains two Hirose DF40C-20DP-0.4V connectors, P1 and P2. The corresponding DF40C-20DS-0.4V
connectors are on the Radar Baseboard MCU7. Figure 12 illustrates the pin-out of the Hirose connectors of the
BGT60LTR11AIP shield.
The hirose connectors can wear out when regularly plugged into and unplugged from the shield. To prevent this,
do not lift the board on the short side out of the connector. Instead simply pull on the long side of the board,
thereby tilting the short side. This will significantly increase the lifetime of the connectors.
1 3
2 4
Y1 FH3840024Z
GND
GND
GND
C16
11pF
C17
16pF
GND
Xosc_ai Xosc_ao
IF1i_PIF1q_P IFI_PostLPFIFQ_PostLPF
C8 10nF C9 10nF
GND GND
C10
5.6nF C11
5.6nF
IF1q_N IF1i_N IFIx_PostLPFIFQx_PostLPF
C12 10nF C13 10nF
GND GND
C14
5.6nF C15
5.6nF

Application Note 12 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Hardware description
The signal IRQ is connected with a R5 resistor (0 Ω) to the divider output (BGT_DIV) of the MMIC. In pulse mode,
BGT_DIV generates a signal that acts as an interrupt signal for the MCU to start ADC acquisition. BGT_DIV could
also be used to measure divider frequency.
Bottom side
Sensor connectors (P1 and P2)
Castellated holes
Figure 12 Connectors on the BGT60LTR11AIP shield, and their pin-outs
3.7 EEPROM
The BGT60LTR11AIP shield contains an EEPROM connected via an I2C interface to store data like a board
identifier. Its connections can be seen in Figure 13. This EEPROM contains a descriptor indicating the type of the
shield board and MMIC. This is used by the firmware to communicate properly with the shield. The EEPROM can
be removed when the shield is intended to be used independently in the autonomous mode.
3V3digital
12 D3
Yellow LED 0201
1
122
3
344
5
566
7
788
9
910 10
11
11 12 12
13
13 14 14
15
15 16 16
17
17 18 18
19
19 20 20
21
21
22
22
23
23
24
24
P1
DF40C-20DP-0.4V
1
122
3
344
5
566
7
788
9
910 10
11
11 12 12
13
13 14 14
15
15 16 16
17
17 18 18
19
19 20 20
21
21
22
22
23
23
24
24
P2
DF40C-20DP-0.4V
R17
1k OpenDrain_LEDGND3V3digital1 I2C_SDA I2C_SCL
IFI
IRQ
GND IFQ
BGT_SCK_1.5_A
1V5Sensor BGT_PHASE_DET
BGT_MOSI_1.5_A
1V5Sensor
1V8Sensor VDD_RF
BGT_MISO_1.5_A
BGT_TARGET_DET
1V8Sensor BGT_RTSN_1.5_A GND
1V8Sensor BGT_SELECT_1.5_A
3V3Sensor
GND 3V3digital
3V3Sensor
GND
GND
BGT_DIVIRQ R5 0R
1
2
P3
Header 2
1
2
P4
Header 2
3V3
GND
Target_Det_Out
Phase_Det_Out

Application Note 13 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Hardware description
Figure 13 Connections of the EEPROM
3.8 LEDs and level shifting
The shield has two LEDs to indicate the motion detection (green) and target’s direction of motion (red), as
shown in Figure 14. R1 and R2 are limiting resistors. The digital block within the detector in the MMIC evaluates
and sets the Target_detect/Phase_detect outputs of the BGT60LTR11AIP MMIC. Target detected (Tdet) output is
active low. Phase detected (Pdet) output is used to show the direction of the detected target. It is set to high for
approaching targets, otherwise low. The default state for Pdet is low.
The outputs from MMIC are at the voltage level of 1.5 V. They are level-shifted to the voltage level of Vin by using
the circuit shown in Figure 14. In the circuit, BGT_TARGET_DET and BGT_PHASE_DET are outputs of MMIC (1.5 V
voltage level). VDD_RF is 1.5 V and Vin is 3.3 V (when connected with Radar Baseboard MCU7).
•When BGT_TARGET_DET is high (1.5 V), NMOS is off (Vgs = 0 V), and Target_Det_Out is 3.3V through the R14
pull-up resistor.
•When BGT_TARGET_DET is low (0 V), NMOS is on (Vgs = 1.5 V), and Target_Det_Out is pulled down to 0 V.
The same applies to the BGT_PHASE_DET signal.
Table 4 LED detection
LED
Mode
Comments
Green
On –target detected
Off –target not detected
Target_Det_Out is an active low signal
Red
On –depart departing
Off –target approaching
Phase_Det_Out is an active low signal
Figure 14 Connections of the LEDs and level shifter
VCC
A1
SCL
B1
VSS A2
SDA B2
U3
24CW1280T-I/CS0668
GND
3V3digital1
I2C_SDAI2C_SCL
3V3digital1
R11
2k2 R12
2k2
VDD_RF
Vin
1
2
6
Q1A
BSD840N
R13
100k R14 10k Target_Det_OutBGT_TARGET_DET
VDD_RF
Vin
5
34
Q1B
BSD840N
R15
100k R16 10k Phase_Det_OutBGT_PHASE_DET
VinVin
R1
1k R2 1k
12
T
Green LED
12
P
Red LED
Phase_Det_OutTarget_Det_Out

Application Note 14 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Hardware description
3.9 MMIC operation modes and settings
The BGT60LTR11AIP MMIC has four quad-state inputs (QS1 to QS4). These can be configured in different ways
to change the settings of the MMIC, as shown in Figure 15, Table 5, and Table 6.
When the pin PLL_TRIG is kept 1 during chip boot and QS1 is either GND or OPEN (i.e., in autonomous mode),
pins SPI_SCK and SPI_MOSI are also sampled to determine the Pulse Repetition Time (dc_rep_rate). In
addition, pins QS2 and QS3 are evaluated by the ADC and converted in 4-bit values each after each “mean
window”. The settings for autonomous mode are mentioned in Section 4.
QS3
QS2 QS1
QS4
BGT_SCK
BGT_MOSI
BGT_PLL_TRIG
Figure 15 QS1 to QS4 schematic and layout connections
Table 5 QS1 settings: operation modes of the MMIC
QS1
Mode
PCB configuration
GND
Autonomous (Continuous Wave) mode
J1 = 0 Ω; R3 = DNP
OPEN
Autonomous (pulse mode) operation
J1 = DNP; R3 = DNP
100 kΩto VDD
SPI mode with external 9.6 MHz clock enabled
J1 = DNP; R3 = 100 kΩ
VDD (default)
SPI mode
J1 = DNP; R3 = 0 Ω
Table 6 QS4 settings: device operating frequency
QS4
Japan e-fuse
Mode
PCB configuration
GND (default)
1
61.1 GHz
J2 = 0 Ω; R4 = DNP
OPEN
1
61.2 GHz
J2 = DNP; R4 = DNP
100 kΩto VDD
1
61.3 GHz
J2 = DNP; R4 = 100 kΩ
VDD_RF
GND
VDD_RF
R9
DNP R19 DNP
QS2 QS3
VDD_RFVDD_RF
R3
0R R4 DNP
QS1 QS4
GND GNDGND
VDD_RF
GND
R6
0R
BGT_MOSI_1.5_A BGT_SCK_1.5_A
R27
100K R29 100K
GND GND
VDD_RF VDD_RF
J3
DNP J4 DNP
J1
DNP J2 0R
BGT_PLL_TRIG_1.5
R18
DNP
R20
DNP
R10
0R

Application Note 15 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Hardware description
QS4
Japan e-fuse
Mode
PCB configuration
VDD
1
61.4 GHz
J2 = DNP; R4 = 0 Ω
GND (default)
0
60.6 GHz
J2 = 0 Ω; R4 = DNP
OPEN
0
60.7 GHz
J2 = DNP; R4 = DNP
100 kΩto VDD
0
60.8 GHz
J2 = DNP; R4 = 100 kΩ
VDD
0
60.9 GHz
J2 = DNP; R4 = 0 Ω
3.10 Layer-stack up and routing
The PCB is designed with a 4-layer stack up with standard FR4 material. Figure 16 shows the different layers
and their thicknesses.
Figure 16 PCB layer stack-up in 2D and 3D views
In the routing on the PCB, the VTUNE pin on BGT60LTR11AIP MMIC should be left floating. Any components
added to the line or a long wire connected can result in spurs.

Application Note 16 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Autonomous (pulse mode) operation
4Autonomous (pulse mode) operation
In the autonomous mode operation, the MMIC uses internal detectors for motion and direction of motion
indication. The detector output signals are connected to LEDs which glow according to target movement.
A shield working in autonomous mode can be used as a plug-on radar module. To make the shield work in
autonomous mode, refer to Table 5. Remove R3 resistor to make it work in autonomous pulse mode as shown
in Figure 17.
Remove R3
Figure 17 Converting the shield to autonomous (pulse mode) operation
The MMIC only needs power supply with the castellated holes and generates outputs on TD and PD castellated
holes depending on the movement of the target. In Figure 18 a shield is shown working independently with a
battery that supplies to the VIN, GND pins of the castellated holes.
Figure 18 Shield working independently with a battery power supply
Table 7 Performance of BGT60LTR11AIP shield in autonomous mode
Detection information
Typical range
Comment
Motion
5 m
At sensitivity 13 (default setting in shield)
Direction of motion
3 m
At sensitivity 13 (default setting in shield)
Note: Once a BGT60LTR11AIP shield is converted to autonomous mode, it should NOT be connected to
Radar GUI via Radar Baseboard MCU7 to change the settings. The resistor values mentioned in
Table 8 and Table 9 are recommended to be soldered on the shield in order to achieve the desired
settings.

Application Note 17 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Autonomous (pulse mode) operation
The default QS2 and QS3 setting on the shield are for sensitivity level 13 and 1 second hold time respectively.
In order to have up to 16 settings for QS2 (Sensitivity) and QS3 (Hold time), the PLL_TRIG should be
connected to VDD by removing R6 and placing R18 = 0 Ω. This will put the MMIC into the ‘Advance-mode’.
Remove R3 for autonomous
mode R6
R18
R9
R19
R10
R20
Hold time
Sensitivity
Figure 19 Changing sensitivity and hold time in autonomous (pulse mode) operation
Table 8 Recommended resistor settings for the QS2 (R9, R10) and QS3 (R19, R20)
Sensitivity
level
Resistor setting
Hold time
Resistor setting
R10
R9
R20
R19
14 (highest)
1.1 kΩ
10 kΩ
500 ms
1.1 kΩ
10 kΩ
13
1.8 kΩ
10 kΩ
1 s
1.8 kΩ
10 kΩ
12
2.8 kΩ
10 kΩ
2 s
2.8 kΩ
10 kΩ
11
3.9 kΩ
10 kΩ
3 s
3.9 kΩ
10 kΩ
10
5.1 kΩ
10 kΩ
5 s
5.1 kΩ
10 kΩ
9
6.8 kΩ
10 kΩ
10 s
6.8 kΩ
10 kΩ
8
9.1 kΩ
10 kΩ
30 s
9.1 kΩ
10 kΩ
7
11 kΩ
10 kΩ
45 s
11 kΩ
10 kΩ
6
15 kΩ
10 kΩ
1 min
15 kΩ
10 kΩ
5
20 kΩ
10 kΩ
90 s
20 kΩ
10 kΩ
4
24 kΩ
10 kΩ
2 min
24 kΩ
10 kΩ
3
39 kΩ
10 kΩ
5 min
39 kΩ
10 kΩ
2
51 kΩ
10 kΩ
10 min
51 kΩ
10 kΩ
1
91 kΩ
10 kΩ
15 min
91 kΩ
10 kΩ
0 (lowest)
270 kΩ
10 kΩ
30 min
270 kΩ
10 kΩ

Application Note 18 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Autonomous (pulse mode) operation
To configure the Pulse Repetition Time (PRT) for the autonomous mode (QS1 is either GND or OPEN), pins
SPI_MOSI and SPI_CLK are used. They are sampled during chip boot up. Figure 20 shows the timing diagram
and current consumption for the configuration with PRT = 1000 µs. Refer to Figure 15 to find the placement and
default settings of these pins.
Table 9 PRT configuration in autonomous mode
SPI_MOSI
SPI_CLK
PRT (µs)
0
0
500
0
1
2000
1
0
250
1
1
1000
Figure 20 SPI_MOSI =1, SPI_CLK = 1, PRT = 1000 µs
The shield has dimensions such that it can be mounted onto an Arduino MKR series board as shown in Figure 21
as a plug-on motion sensor.

Application Note 19 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
Autonomous (pulse mode) operation
Figure 21 Shield mounted on an Arduino MKR Wifi1010 board

Application Note 20 of 22 2021-07-29
XENSIV™ BGT60LTR11AIP shield
60 GHz radar system platform
References
5References
[1] Infineon application note –AN599 –“Radar Baseboard MCU7”