Panasonic Schottky Barrier Diodes MA3Z792DG User manual

Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00215BED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3Z792DG, MA3Z792EG
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■Features
•Two MA3Z7920G is contained in one package
•Forward current (Average) IF(AV) =100 mA rectification is possible
•Optimum for high frequency rectification because of its short
reverse recovery time trr
•Low forward voltage VFand good rectification efficiency
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=100 mA 0.55 V
Reverse current IRVR=30 V 15 µA
Terminal capacitance CtVR=0 V, f =1 MHz 20 pF
Reverse recovery time *trr IF=IR=100 mA 2 ns
Irr =10 mA, RL=100 Ω
■Electrical Characteristics Ta=25°C ±3°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Repetitive peak reverse voltage VRRM 30 V
Forward current Single IF100 mA
Double *170
Peak forward Single IFM 300 mA
current Double *1200
Non-repetitive peak forward IFSM 1A
surge current *2
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F
=100 mA
I
R
=100 mA
R
L
=100 Ω
10%
Input Pulse Output Pulse
I
rr
=10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4.*: trr measurement circuit
Note) *1: Value of each diode in double diodes used.
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■Package
•Code
SMini3-F2
•Pin Name
MA3Z792DG MA3Z792EG
1: Cathode 1 1: Anode 1
2: Cathode 2 2: Anode 2
3: Anode 3: Cathode
■Marking Symbol
MA3Z792DG: M3Y
MA3Z792EG: M3Z
■Internal Connection
12
3
12
3
DE

2
MA3Z792DG, MA3Z792EG
SKH00215BED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRVFTa
IRTaCtVR
10
−2
0 0.1 0.2 0.3 0.4 0.5 0.6
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a
=125°C−20°C
75°C 25°C
10
−1
0 5 10 15 20 25 30
1
10
10
2
10
3
10
4
Reverse voltage V
R
(V)
Reverse current I
R
(µA)
T
a
=125°C
75°C
25°C
10
−1
−40 0 40 80 120 160 200
1
10
10
2
10
3
10
4
Ambient temperature Ta(°C)
Reverse current IR(µA)
V
R
=30 V
3 V
1 V
0
24
20
16
12
8
4
0 5 10 15 20 25 30
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
f =1 MHz
Ta=25°C
0
0.2
0.4
0.6
0.8
1.0
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F
=100 mA
10 mA
3 mA
IF(AV) Ta
0
20
40
60
120
100
80
140
0
DC
604020 180160120 14010080
Ambient temperature T
a
(°C)
T
j
=125°C
Forward current (Average) I
F(AV)
(mA)

MA3Z792DG, MA3Z792EG
3
SKH00215BED
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30
+0.05
−0.02
0.13
+0.05
−0.02
2.00 ±0.20
(0.89)
0.90
±0.10
(0.65)(0.65)
1.30
±0.10
1.25
±0.10
2.10
±0.10
0.425
±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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