Panasonic Transistors 2SA2161J User manual

Transistors
1
Publication date: November 2004 SJC00312BED
2SA2161J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037J
■Features
•Low collector-emitter saturation voltage VCE(sat)
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −15 V
Collector-emitter voltage (Base open) VCEO −12 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−500 mA
Peak collector current ICP −1A
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −15 V
Collector-emitter voltage (Base open) VCEO IC=−1 mA, IB=0 −12 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −5V
Collector-base cutoff current (Emitter open) ICBO VCB =−15 V, IE=0 −0.1 µA
Forward current transfer ratio hFE VCE =−2 V, IC=−10 mA 270 680 
Collector-emitter saturation voltage VCE(sat) IC=−200 mA, IB=−10 mA −250 mV
Transition frequency fTVCB =−2 V, IE=10 mA, f =200 MHz 200 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 4.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Marking Symbol: 2U
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1: Base
2: Emitter
3: Collector
EIAJ: SC-89, JEDEC: SOT-490
SSMini3-F1 Package
0.27±0.02
3
12
0.12+0.03
–0.01
0.80±0.05(0.80)
0.85
1.60±0.05
0 to 0.02
0.10 max.
0.70+0.05
–0.03
(0.375)
5˚
5˚
1.60+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2161J
2SJC00312BED
VCE(sat) IChFE ICCob VCB
PCTaICVCE ICVBE
020 40 60 80 100 120 140
0
20
40
60
80
100
120
140
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0
−10
−20
−30
−40
−50
−60
−70
0− 0.5 −1.0 −1.5 −2.0 −2.5 −3.0
Collector current I
C
(mA)
Collector-emitter voltage VCE (V)
IB = −160 µA
−140 µA
−120 µA
−100 µA
−80 µA
−60 µA
−40 µA
−20 µA
T
a
=25°C
0−1.4−1.2−1.0− 0.8− 0.2 − 0.6− 0.4
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
Base-emitter voltage VBE (V)
Collector current I
C
(mA)
V
CE
=−2 V
T
a
=85°C−25°C
25°C
−1 000−100−10−1− 0.1
− 0.1
− 0.01
−1
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
T
a
=85°C
25°C
−25°C
I
C
/ I
B
=20
−1−10 −100 −1 000
0
600
500
400
300
200
100
Forward current transfer ratio hFE
Collector current IC(mA)
Ta=85°C
25°C
−25°C
VCE =−2 V
510
0
100
10
1
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
f =1 MHz
T
a
=25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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