Panasonic Transistors 2SA2084 User manual

Transistors
1
Publication date: January 2003 SJC00286AED
2SA2084
Silicon PNP epitaxial planar type
For general amplification
■Features
•High collector-emitter voltage (Base open) VCEO
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC=−100 µA, IB=0 −300 V
Emitter-base voltage (Collector open) VEBO IE=−1 µA, , IC=0 −5V
Forward current transfer ratio *hFE VCE =−10 V, IC=−5 mA 30 150 
Collector-emitter saturation voltage VCE(sat) IC=−10 mA, IB=−1 mA −0.6 V
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 7 pF
(Common base, input open circuited)
Transition frequency fTVCB =−10 V, IE=10 mA, f =200 MHz 50 MHz
Marking Symbol: 7N
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −300 V
Collector-emitter voltage (Base open) VCEO −300 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−70 mA
Peak collector current ICP −100 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank P Q
hFE 30 to 100 60 to 150
This product complies with the RoHS Directive (EU 2002/95/EC).

2
2SA2084
SJC00286AED
VCE(sat) IChFE ICCob VCB
PTTaICVCE ICVBE
0
50
100
150
200
250
02040 8060 140120100 160
Ambient temperature T
a
(°C)
Collector power dissipation P
C
(mW)
0−12−2−10−4−8−6
Collector-emitter voltage VCE (V)
Collector current IC(mA)
−0.5 mA
−0.4 mA
−0.3 mA
−0.2 mA
−0.1 mA
−0.6 mA
−0.7 mA
−0.8 mA
−0.9 mA
IB=−1.0 mA
0
−80
−70
−60
−50
−40
−30
−20
−10
Ta=25°C
0−1.4−0.4 −0.6−0.2 −1.2−0.8 −1.0
0
−120
−100
−80
−60
−40
−20
V
CE
=−10 V
T
a
=85°C
−25°C
25°C
Base-emitter voltage VBE (V)
Collector current I
C
(mA)
0−10 −20 −30 −40
1
100
10
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
−1−10 −100 −1 000
0
120
100
80
60
40
20
VCE =−10 V
Ta=85°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
−0.01
−0.1
−1
−1−100−10
I
C
/ I
B
=10
−0.1
T
a
=85°C
25°C−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
This product complies with the RoHS Directive (EU 2002/95/EC).

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