Panasonic Transistors 2SC4805G User manual

Transistors
1
Publication date: May 2007 SJC00367AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4805G
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■Features
•High transition frequency fT
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB =10 V, IE=01µA
Emitter-base cutoff current (Collector open) IEBO VEB =1 V, IC=01µA
Forward current transfer ratio *hFE VCE =8 V, IC=20 mA 50 300 
Transition frequency fTVCE =8 V, IC=15 mA, f =1.5 GHz 7.0 8.5 GHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 0.6 1.0 pF
(Common base, input open circuited)
Forward transfer gain S21e2VCE =8 V, IC=15 mA, f =1.5 GHz 7 9 dB
Maximum unilateral power gain GUM VCE =8 V, IC=15 mA, f =1.5 GHz 10 dB
Noise figure NF VCE =8 V, IC=7 mA, f =1.5 GHz 2.2 3.0 dB
■Electrical Characteristics Ta=25°C ±3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 2V
Collector current IC65 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S No-rank
hFE 50 to 120 100 to 170 150 to 300 50 to 300
Marking symbol 3SQ 3SR 3SS 3S
Product of no-rank is not classified and have no indication for rank.
■Package
•Code
SMini3-F2
•Marking Symbol: 3S
•Pin Name
1: Base
2: Emitter
3: Collector

2SC4805G
2SJC00367AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) IChFE ICfTIC
PCTaICVCE ICVBE
Cob VCB GUM ICNF IC
0 16040 12080
0
200
160
120
80
40
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
012108264
0
30
25
20
15
10
5
Ta=25°C
200 µA
150 µA
100 µA
50 µA
IB=250 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 1.21.00.80.2 0.60.4
0
120
100
80
60
40
20
VCE =8 V
Ta=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.001
0.01
0.1
1
10 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
0.1 1 10 100
0
240
200
160
120
80
40
VCE =8 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
1 10 100
0
12
10
8
6
4
2
VCB =8 V
f =1.5 GHz
Ta=25°C
Transition frequency fT(GHz)
Collector current IC(mA)
1 10 100
0
1.2
1.0
0.8
0.6
0.4
0.2
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
0.1 1 10 100
0
12
10
8
6
4
2
V
CE
=8 V
f =1.5 GHz
T
a
=25°C
Maximum unilateral power gain G
UM
(dB)
Collector current I
C
(mA)
0.1 1 10 100
0
6
5
4
3
2
1
VCE =8 V
f =1.5 GHz
Ta=25°C
Noise figure NF (dB)
Collector current IC(mA)

This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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