Panasonic Multi Chip Discrete UP05C8GF User manual

Multi Chip Discrete
Publication date: January 2008 SJJ00352BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP05C8GF
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Downsizing of the equipment and costs can be reduced through reduction of
the number of parts
Basic Part Number
2SC3932 +CCD load device
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Tr
Collector-base voltage
(Emitter open) VCBO 30 V
Collector-emitter voltage
(Base open) VCEO 20 V
Emitter-base voltage
(Collector open) VEBO 3 V
Collector current IC50 mA
CCD
loaddevice
Limiting element voltage Vmax 40 V
Limiting element current Imax 10 mA
Overall
Total power dissipation *PT125 mW
Junction temperature Tj125 °C
Storage temperature Tstg -55 to +125 °C
Note) *: Measuring on substrate at 17 mm ×10 mm ×1 mm
Package
Code
SSMini6-F2
Pin Name
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
Marking Symbol: 4V
Internal Connection
3
(G)
(S)
4
1
(E) 2 (B)
(C)
6(D) 5
Tr FET

UP05C8GF
2SJJ00352BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta= 25°C±3°C
Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= 100 mA, IE= 0 30 V
Emitter-base voltage (Collector open) VEBO IE= 10 mA, IC= 0 3 V
Base-emitter voltage VBE VCE = 10 V, IC= 2 mA 720 mV
Forward current transfer ratio hFE VCE = 10 V, IC= 2 mA 100 250 
Transition frequency *fTVCB = 10 V, IE= -15 mA, f = 200 MHz 1 300 MHz
Power gain PG VCB = 10 V, IE= -1 mA, f = 100 MHz 20 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current IPVDS = 10 V, VG= 0 3.8 5.2 mA
Output impedance ZOVDS = 10 V, VG= 0 0.05 MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

UP05C8GF
SJJ00352BED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
PTTaICVCE ICIB
ICVBE VCE(sat) IChFE IC
IPVDS
0 40 80 120
0
120
80
40
Total power dissipation PT(mW)
Ambient temperature Ta(°C)
UN05C8GF_PT-Ta
0 4 8 12
0
8
12
4
Collector current IC(mA)
Collector-emitter voltage VCE (V)
UP05C8GF_IC-VCE
80 µA
40 µA
20 µA
Ta=25°C
IB=100 µA
60 µA
0 0.4 0.8
0
40
20
Collector current IC(mA)
Base current IB(A)
UP05C8GF_IC-IB
VCE =6 V
0 0.4 1.20.8
0
40
50
10
20
30
Collector current IC(mA)
Base-emitter voltage VBE (V)
UP05C8GF_IC-VBE
VCE =6 V
Ta=85°C
−25°C
25°C
10−11 10 102
10−1
1
10−2
UP05C8GF_
VCE(sat)
-
IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
IC/ IB= 10
Ta= 85°C
25°C
−25°C
1 10 102
120
160
80
40
0
UP05C8GF_ hFE - IC
Forward current transfer ratio hFE
Collector current IC(mA)
Ta= 85°C
−25°C
25°C
0 4 8 12 16
0
4
2
Peak current IP(mA)
Drain-source voltage VDS (V)
UN05C8GF_IP-VDS

UP05C8GF
4SJJ00352BED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini6-F2 Unit: mm
1.60 ±0.05
0.20 +0.05 −0.02
6 5 4
1 2 3
1.60 ±0.05 1.20 ±0.05
1.00 ±0.05
(0.5) (0.5)
(5°)
0.55 ±0.05
0 to 0.05
(0.27)
0.13 +0.05 −0.02
(5°)
0.20 ±0.05

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