Philips BGY280 User manual

DATA SHEET
Preliminary specification 2000 Nov 15
DISCRETE SEMICONDUCTORS
BGY280
UHF amplifier module
M3D454

2000 Nov 15 2
Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
FEATURES
•Dual band GSM amplifier
•3.6 V nominal supply voltage
•33.5 dBm output power for GSM1800
•35.5 dBm output power for GSM900
•Easy output power control by DC voltage.
•Internal input and output matching.
APPLICATIONS
•Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
DESCRIPTION
The BGY280 is a power amplifier module in a SOT559A
leadless package with a plastic cap. The dimensions are
13.75 x 11 x 1.7 mm. The module consists of two
separated line-ups. One for GSM900 and one for
GSM1800. Internal power control, input and output
matching.
PINNING - SOT559A
PIN DESCRIPTION
1,2,3,6,9,10,11,14 Ground
4 RF output 2 (1800 MHz)
5V
S2 (1800 MHz)
7V
S1 (900 MHz)
8 RF output 1 (900 MHz)
12 RF input 1 (900 MHz)
13 VC1 (900 MHz)
15 VC2 (1800 MHz)
16 RF input 2 (1800 MHz)
Fig.1 Simplified outline
Bottom view
8
7
5
6
4
12
13
15
14
16
123
11 10 9
MBL031
QUICK REFERENCE DATA
RF performance at Tmb =25°C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF
OPERATION
f
(MHz)
VS
(V)
VC
(V)
PL
(dBm)
Gp
(dB)
η
(%)
ZS, ZL
(Ω)
Pulsed; δ=2:8 880 to 915 3.6 ≤2.2 typ. 35.5 typ. 35.5 47 50
1710 to 1785 3.6 ≤2.2 typ. 33.5 typ. 33.5 40 50
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VS1, VS2 DC supply voltage VC1,2 =0;RF
IN =off −7V
VC1,2 > 0.5 V; RFIN =on −5.5 V
VC1, VC2 DC control voltage −3V
PD1, PD2 input drive power −10 mW
PL1 load power 1 −4W
PL2 load power 2 −3W
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −30 +100 °C

2000 Nov 15 3
Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
CHARACTERISTICS
ZS=Z
L=50Ω; PD1,2 =0dBm;V S1 =V S2 = 3.6 V; VC1,2 ≤2.2 V; Tmb =25°C; tp= 575 µs; δ =2:8;
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ILleakage current VC1,2 =0.2V −−10 µA
ICM1, ICM2 peak control current −−2mA
PL1 load power GSM 900 VC1 = 2.2 V 34.5 35.5 −dBm
VC1 = 2.2 V; VS1 =3.2V;T
mb =25°C34 35 −dBm
PL2 load power GSM 1800 VC2 = 2.2 V 32.5 33.5 −dBm
VC2 = 2.2 V; VS1 =3.2V;T
mb =25°C32 33 −dBm
GP1 power gain GSM900 PL1 = 35.5 dBm −35.5 −dB
GP2 power gain GSM1800 PL2 =33dBm −33.5 −dB
η1efficiency GSM900 PL1 =35dBm 40 45 −%
η2efficiency GSM1800 PL2 =32dBm 33 38 −%
H2, H3
harmonics GSM900 PL1 =34dBm −−−40 dBc
harmonics GSM1800 PL2 =32dBm −−−35 dBc
VSWRin
input VSWR of active device VS1,2 = 3.2 to 5 V; PL1 =34dBm;
PL2 =32dBm
−3:1
input VSWR of inactive
device
VS1,2 = 3.2 to 5 V; VC1,2 ≤0.5 V −8:1
isolation GSM900 VC1,2 =0.5V;P
D1,2 =3dBm −−54 −37 dBm
isolation GSM1800 VC1,2 =0.5V;P
D1,2 =3dBm −−42 −37 dBm
second harmonic isolation
from GSM900 into GSM1800
PL1 =35dBm −−21 −20 dBm
maximum slope −5dBm< P
L1,2 <P Lmax 120 −200 dB/V
trcarrier rise time PL1 = 6 to 34 dBm; PL2 =4to32dBm;
time to settle within −0.5 dB of final PL
−1.5 2 µs
tfcarrier fall time PL1 = 6 to 34 dBm; PL2 =4to32dBm;
time to fall below −37 dBm
−1.5 2 µs
Pn
noise power GSM900
PL1 ≤34 dBm; bandwidth = 100 kHz;
f = 925 - 935 MHz; fc= 897.5 MHz
−−−71 dBm
PL1 ≤34 dBm; bandwidth = 100 kHz;
f = 935 - 960 MHz; fc= 897.5 MHz
−−82 −80 dBm
noise power GSM1800 PL2 ≤32 dBm; bandwidth = 100 kHz;
f = 1805 - 1880 MHz; fc= 1747.5 MHz
−−80 −73 dBm
AM/PM conversion PD1,2 =−0.5to0.5dBm;
PL1,2 = constant during measurement
for PL1 = 6 to 34 dBm and
PL2 = 4 to 32 dBm
−−6 deg/dB
AM/AM conversion PL1 = 6 to 34 dBm; PL2 =4to32dBm;
f = 100 kHz; PD1,2 =5.4%
−25 %

2000 Nov 15 4
Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
TX/R
Xconversion PL1 =34dBm;f=915 MHz
PL1 (925 MHz) / PD(905 MHz)
PL2 =32dBm;f=1785 MHz
PL2 (1765 MHz) / PD(1805 MHz)
−25 −dB
control bandwidth PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; 1 1.5 −MHz
stability VS1,2 = 3.2 to 5 V; VC= 0 to 2.2 V;
PD1,2 =0to3dBm;P
L1 <34.8dBm;
PL2 < 32.5 dBm;
VSWR ≤6 : 1 through all phases
−−−60 dBc
ruggedness VS1,2 =5V;P
D1,2 =0to3dBm;
PL1 = 34.8 dBm; PL2 = 32.5 dBm;
VSWR ≤6 : 1 through all phases
no degradation
VS1,2 = 4.2 V; PD1,2 =0to3dBm;
PL1 = 34.8 dBm; PL2 = 32.5 dBm;
VSWR ≤10 : 1 through all phases
no degradation
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Fig.2 Load power as a function of control voltage;
typical values.
ZS=Z
L=50Ω; VS=3.6V;P D=0dBm;
Tmb =25°C; δ=2:8;t
p= 575 µs.
20
25
30
35
40
11.522.5
VC(V)
PL
(dBm)
1747.5MHz
897.5MHz
Fig.3 Efficiency as a function of load power;
typical values.
ZS=Z
L=50Ω; VS=3.6V;P D=0dBm;
Tmb =25°C; δ=2:8;t
p= 575 µs.
0
10
20
30
40
50
20 25 30 35 40
PL(dBm)
η
(%)
1785MHz
1710MHz 915MHz
880MHz

2000 Nov 15 5
Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
Fig.4 Second harmonic as a function of load
power; typical values.
ZS=Z
L=50Ω; VS=3.6V;P D=0dBm;
Tmb =25°C; δ=2:8;t
p= 575 µs.
-60
-50
-40
-30
-20
20 25 30 35 40
PL(dBm)
H2
(dBc)
1710MHz
1785MHz
915MHz
880MHz
Fig.5 Third harmonic as a function of load power;
typical values.
ZS=Z
L=50Ω; VS=3.6V;P D=0dBm;
Tmb =25°C; δ=2:8;t
p= 575 µs.
-60
-50
-40
-30
-20
20 25 30 35 40
PL(dBm)
H3
(dBc)
880MHz
9
1
5
MHz
171
0
MHz
17
85
MHz
0
10
20
30
40
10 20 30 40
PL(dBm)
gain
(dB)
(6)
(4)
(5)
(3)
(1)
(2)
conversion
g
ain
small signal gain
Fig.6 Gain as a function of load power; typical
values.
ZS=Z
L=50Ω; PD=0dBm;V S=3.6V;T mb =25°C;
fc= 1747.5 MHz; δ= 2 : 8; t p=575µs.
(1) f = 1805 MHz (4) f = 1615 MHz
(2) f = 1842.5 MHz (5) f = 1625.5 MHz
(3) f = 1880 MHz (6) f = 1690 MHz
Fig.7 Gain as a function of load power; typical
values.
0
10
20
30
40
10 20 30 40
PL(dBm)
gain
(dB)
(1)
(6)
(5)
(4)
(3) (2)
conversion gain
small signal gain
ZS=Z
L=50Ω; VS=3.6V;P D=0dBm;
Tmb =25°C; fc=897.5MHz;δ= 2 : 8; t p= 575 µs.
(1) f = 925 MHz (4) f = 835 MHz
(2) f = 942.5 MHz (5) f = 852.5 MHz
(3) f = 960 MHz (6) f = 870 MHz

2000 Nov 15 6
Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
Fig.8 Output amplitude modulation as a function
of load power; typical values.
ZS=Z
L=50Ω; VS=3.6V;P D=0dBm;T mb =25°C;
∆f = 100 kHz; input amplitude modulation = 5.4%; δ =2:8;t
p=575µs.
0
10
20
30
40
0 10203040
PL(dBm)
output
AM
(%)
900MHz
1800MHz
Fig.9 Output phase at PD= +0.5 dBm, relatively
to output phase at PD=−0.5 dBm;
typical values.
ZS=Z
L=50Ω; VS=3.6V;P D=0dBm;T mb =25°C;
δ=2:8;t
p=575µs.
0
2
4
6
8
-10 0 10 20 30 40
PL(dBm)
AM-PM
(deg/dB)
1800MHz
900MHz
Fig.10 Noise as a function of load power;
typical values.
ZS=Z
L=50Ω; VS=3.6V;P D=0dBm;
Tmb =25°C; δ=2:8;t
p= 575 µs.
-100
-90
-80
-70
-60
0 10203040
PL(dBm)
noise
(dBm)
RX=1845MHz
RX=942.5MHz

2000 Nov 15 7
Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
Z1Z4
Z3 Z2
VC
VC
VS
VS
RF input RF output
RF outputRF input
GSM1800
BGY280
GSM900
12
13
15
16
8
7
5
4
Fig.11 Test circuit
List of components (See Fig 10 and 11)
Note
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr=2.2);
thickness 1⁄32 inch.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C4multilayer ceramic chip capacitor 100 µF; 40 V
C2, C3electrolytic capacitor 100 nF
Z1, Z2, Z3, Z4stripline; note 1 50 Ωwidth 2.33 mm
R1, R2metal film resistor 100 Ω; 0.6 W 2322 156 11001

2000 Nov 15 8
Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
Fig.12 PCB testcircuit

2000 Nov 15 9
Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
PACKAGE OUTLINE SOT559A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
00-01-31
00-09-28
IEC JEDEC EIAJ
SOT559A
0 5 10 mm
scale
Leadless surface mounted package; plastic cap; 16 terminations SOT559A
A
c
E1
D
123
11
12
13
14
15
16
10 9
4
5
6
7
8
D1
E
e1
L (12×) b (12×)
L1(4×)
e2
e2
e
e
e1
pin 1 index
UNIT
mm 1.1
0.9
3.5
3.3
1.9
1.5 2.6 4.4
bb
1
2.9
2.7
b2
DIMENSIONS (mm are the original dimensions)
A
5.275
5.075
b3
4.2
4.0
b4
1.2
1.0
b5
0.625
0.425
b6
0.8
0.6
b7
0.9
0.7
b8
14.05
13.45
D
0.55
0.45
c
13.6
13.3
D1
11.3
10.7
Ee
3.3
e1
10.85
10.55
1.1
0.9
E1e2L
2.6
2.4
Z
1.6
1.4
L1
2.5
2.3
Z1
0.6
0.4
L2
1.6
1.4
L3
3.5
3.3
Z2
2.9
2.7
Z3
1.1
0.9
Z4
1.5
1.3
Z5
1.1
0.9
Z6
3.8
3.6
Z7
1.5
1.3
Z8
Z (2×)
Z1(2×)
L3(4×)
Z5
(4×)
b6(4×)
b1(2×)b
5(4×)b3(4×)
b8(4×)
b7(4×)
b4
(4×)
b2
(2×)
Z4(12×)
Z6(12×)
Z2(2×)
Dimensions solderresist
L2
(4×)
Z8 (6×)
Z7 (6×)
Z3
(2×)

2000 Nov 15 10
Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.