Philips CGY2014TT User manual

DATA SHEET
Product specification
Supersedes data of 2000 Apr 11
File under Integrated Circuits, IC17
2000 Oct 16
INTEGRATED CIRCUITS
CGY2014TT
GSM/DCS/PCS power amplifier

2000 Oct 16 2
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
FEATURES
•Operating at 3.6 V battery supply
•Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
•Input power: 0 dBm in GSM band and 3 dBm in
DCS/PCS band
•Wide operating temperature range from −20 to +85 °C
•HTSSOP20 exposed die pad package.
APPLICATIONS
•Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
GENERAL DESCRIPTION
The CGY2014TT is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
The voltages applied on pins VDD (drain) control the power
of the power amplifier and permit to switch it off.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
VDD positive supply voltage −3.5 4.2 V
IDD(LB) GSM positive peak supply current −2−A
Po(LB)(max) maximum output power in GSM band 34.5 35 −dBm
IDD(HB) DCS/PCS positive peak supply current −1.5 −A
Po(HB)(max) maximum output power in DCS/PCS band 32 32.5 −dBm
Tamb ambient temperature −20 −+85 °C
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
CGY2014TT HTSSOP20 plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm SOT527-1

2000 Oct 16 3
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
BLOCK DIAGRAM
handbook, full pagewidth
CGY2014TT
9
GND
RFO/VDD3LB
n.c.
RFO/VDD3HB
RFILB
RFIHB
13, 14
FCA180
VDD1HB
VDD1LB VDD2LB
VDD2HB
7
GND1LB
86
2
15
3 4, 5
17, 18
1, 10, 11, 12,
16, 19, 20
Fig.1 Block diagram.

2000 Oct 16 4
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
PINNING
SYMBOL PIN DESCRIPTION
n.c. 1 not connected
RFIHB 2 DCS/PCS power amplifier input
VDD1HB 3 DCS/PCS first stage supply voltage
VDD2HB 4 DCS/PCS second stage supply voltage
VDD2HB 5 DCS/PCS second stage supply voltage
VDD2LB 6 GSM second stage supply voltage
VDD1LB 7 GSM first stage supply voltage
GND1LB 8 GSM first stage ground
RFILB 9 GSM power amplifier input
n.c. 10 not connected
n.c. 11 not connected
n.c. 12 not connected
RFO/VDD3LB 13 GSM power amplifier output and third stage supply voltage
RFO/VDD3LB 14 GSM power amplifier output and third stage supply voltage
GND 15 ground
n.c. 16 internal connection to ground; pin should not be connected to the board
RFO/VDD3HB 17 DCS/PCS power amplifier output and third stage supply voltage
RFO/VDD3HB 18 DCS/PCS power amplifier output and third stage supply voltage
n.c. 19 not connected
n.c. 20 not connected
−exposed die ground
FUNCTIONAL DESCRIPTION
Operating conditions
The CGY2014TT is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the “ETS 300 577 specification” , which are
defined as follows:
•ton = 570 µs
•T = 4.16 ms
•Duty cycle δ=1/8.
Multislot operation can be implemented provided that the
application circuit does not drive the IC beyond the limiting
values.
Power amplifier
The GSM and DCS/PCS power amplifiers consist of three
cascaded gain stages with an open-drain configuration.
Each drain has to be loaded externally by an adequate
reactive circuit which also has to be a DC path to the
supply.
handbook, halfpage
CGY2014TT
FCA181
1
2
3
4
5
6
7
8
9
10
n.c.
RFIHB
VDD1HB
VDD2HB
VDD2HB
VDD2LB
VDD1LB
GND1LB
RFILB
n.c.
n.c.
n.c.
RFO/VDD3HB
RFO/VDD3HB
n.c.
GND
RFO/VDD3LB
RFO/VDD3LB
n.c.
n.c.
20
19
18
17
16
15
14
13
12
11
Fig.2 Pin configuration.

2000 Oct 16 5
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;
see
“Application Note CTT0003” .
THERMAL CHARACTERISTICS
Note
1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;
see
“Application Note CTT0003” .
DC CHARACTERISTICS
VDD = 3.5 V; Tamb =25°C; general operating conditions applied; peak current values measured during burst; unless
otherwise specified.
Notes
1. The supply circuit includes a (drain) MOS switch with RDSon =40mΩ. The battery voltage is 3.6 V (typical value).
2. No RF input signal or Pi(LB) <−30 dBm; VDD =1V.
3. No RF input signal or Pi(HB) <−30 dBm; VDD =1V.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VDD positive supply voltage 5.2 V
Tj(max) maximum operating junction temperature 150 °C
Tstg storage temperature 150 °C
Ptot total power dissipation note 1 2.0 W
Pi(LB) GSM input power 10 dBm
Pi(HB) DCS/PCS input power 10 dBm
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-c) thermal resistance from junction to case note 1 30 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies: pins VDD1LB, VDD2LB, RFO/VDD3LB, VDD1HB, VDD2HB and RFO/VDD3HB
VDD positive supply voltage note 1 0 3.5 4.2 V
IDD(LB) GSM positive peak supply current Pi(LB) = 0 dBm −2−A
note 2 0.5 1.5 3 A
IDD(HB) DCS/PCS positive peak supply current Pi(HB) = 3 dBm −1.5 −A
note 3 0.25 1 2 A

2000 Oct 16 6
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
AC CHARACTERISTICS
VDD = 3.5 V; Tamb =25°C; measured on the Philips demoboard (see Fig.8).
Notes
1. The device is adjusted to provide nominal load power into a 50 Ωload. The device is switched off and a 6 : 1 load
replaces the 50 Ωload. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
2. The power amplifier can be matched to PCS and or DCS/PCS operation through optimization of the matching circuit.
3. Isolation can be improved to −20 dBm (typical value) with a pin diode switched in the DCS output matching.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Low band: GSM power amplifier
Pi(LB) input power −2 0 +2 dBm
fRF(LB) RF frequency range 880 −915 MHz
Po(LB)(max) maximum output power see Figs 3 and 4 34.5 35 −dBm
ηLB efficiency see Fig.3 50 55 −%
Po(LB)(min) minimum output power VDD =0V;P
i(LB) = 0 dBm −−35 −dBm
NRX(LB) output noise in RX band Pi(LB) = 0 dBm
fRF = 925 to 935 MHz −−−117 dBm/Hz
fRF = 935 to 960 MHz −−−129 dBm/Hz
H2LB 2nd harmonic level Pi(LB) = 0 dBm −−−35 dBc
H3LB 3rd harmonic level Pi(LB) = 0 dBm −−−35 dBc
StabLB stability Pi(LB) = 0 dBm; note 1 −−−60 dBc
High band: DCS/PCS power amplifier; note 2
Pi(HB) input power 2 3 5 dBm
fRF(HB) RF frequency range for DCS operation 1710 −1785 MHz
Po(HB)(max) maximum output power see Figs 5 and 6 32 32.5 −dBm
ηHB efficiency see Fig.5 38 40 −%
Po(HB)(min) minimum output power VDD =0V;P
i(HB) = 3 dBm −−32 −dBm
αHB high band isolation when
low band is operating VDD(LB) = 3.5 V; Pi(LB) = 0 dBm; VDD(HB) =0V;P
i(HB) = 3 dBm;
note 3
−0−dBm
NRX(HB) output noise in RX band Pi(HB) = 3 dBm −−−121 dBm/Hz
H2HB 2nd harmonic level Pi(HB) = 3 dBm −−−35 dBc
H3HB 3rd harmonic level Pi(HB) = 3 dBm −−−35 dBc
StabHB stability Pi(HB) = 3 dBm; note 1 −−−60 dBc

2000 Oct 16 7
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
Performance characteristics in GSM band
handbook, halfpage
800 850
Po
(dBm)
900 1000
37
33
31
35
η
(%)
60
40
20
0
950fRF (MHz)
FCA171
(3)
(2)
(1)
(3)
(2)
(1)
output power
efficiency
Fig.3 Outputpowerandefficiencyasafunctionof
the frequency.
(1) Tamb =85°C.
(2) Tamb =25°C.
(3) Tamb =−20 °C.
VDD1(LB) =3V.
V
DD2(LB) =V DD3(LB) = 3.5 V.
Pi(LB) = 0 dBm.
handbook, halfpage
01
P
o
(dBm)
24
40
30
10
0
20
3VDD (V)
FCA176
(1)
(2)
(3)
Fig.4 Output power as a function of the supply
voltage.
(1) Tamb =85°C.
(2) Tamb =25°C.
(3) Tamb =−20 °C.
fRF(LB) = 900 MHz.
Pi(LB) = 0 dBm.
VDD1(LB) =3V.
V
DD =V DD2(LB) =V DD3(LB).
Performance characteristics in DCS band
handbook, halfpage
1650 1700
Po
(dBm)
1750 1850
35.5
34.5
32.5
31.5
33.5
η
(%)
55
45
25
15
35
1800
fRF (MHz)
FCA172
(3)
(2)
(1)
(3)
(2)
(1)
output power
efficiency
Fig.5 Outputpowerandefficiencyasafunctionof
the frequency.
(1) Tamb =85°C.
(2) Tamb =25°C.
(3) Tamb =−20 °C.
VDD1(HB) =3V.
V
DD2(HB) =V DD3(HB) = 3.5 V.
Pi(HB) = 3 dBm.
handbook, halfpage
01
P
o
(dBm)
24
40
30
10
0
20
3VDD (V)
FCA173
(1)
(2)
(3)
Fig.6 Output power as a function of the supply
voltage.
(1) Tamb =85°C.
(2) Tamb =25°C.
(3) Tamb =−20 °C.
fRF(HB) = 1750 MHz.
Pi(HB) = 3 dBm.
VDD1(HB) =3V.
V
DD =V DD2(HB) =V DD3(HB).

2000 Oct 16 8
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
APPLICATION INFORMATION
handbook, full pagewidth
FCA174
1
2
3
4
5
6
7
8
9
10 11
12
20
19
18
17
16
15
14
13
CGY2014TT
TRL2
TRL1
n.c.
TRL3
10 nF
3.9 nH
3.3 nH
100 pF
1
pF
Vd23DCS
Vd1DCS
Vd1GSM
RFinGSM RFILB
RFinDCS
100 pF
1 nF
4.7
pF
6 pF
4 pF
TRL6
TRL4 TRL5
BA891
56 pF
4.7 pF 9.1 pF
100 pF
3 pF
2.7 pF
5.6 pF
3.3 kΩ
1 nF
n.c. n.c.
n.c.
n.c.
n.c.
n.c.(1)
GND
RFIHB
VDD1HB
VDD2HB
VDD2HB
VDD2LB
VDD1LB
RFO/VDD3HB
RFoutDCS
RFoutGSM
Vpin
RFO/VDD3HB
RFO/VDD3LB
RFO/VDD3LB
GND1LB
Vd23GSM
Fig.7 Application diagram.
(1) Pin 16 is internally connected to ground and should not be connected to the board.
(2) Transmission lines:
Thickness 0.4 mm, substrate FR4 and εr= 4.7.
TRL1: width = 500 µm, length = 4.5 mm.
TRL2: width = 500 µm, length = 20 mm.
TRL3: width = 150 µm, length = 30 mm.
TRL4: width = 500 µm, length = 4 mm.
TRL5: width = 500 µm, length = 1.5 mm.
TRL6: width = 500 µm, length = 13 mm.

2000 Oct 16 9
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
handbook, full pagewidth
FCA175
CGY2014TT
3 pF
4.7 pF
9.1 pF
4 pF
1 pF
100 pF 100 pF
1 nF
6 pF
3.3 nH
4.7 pF 3.9 nH
10 nF
2.7 pF
100 pF
5.6 pF
BA891
56 pF
3.3 kΩ
1 nF
Fig.8 Part of layout of Philips demoboard.
Dimensions: approximately 19 mm ×19 mm.

2000 Oct 16 10
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
PACKAGE OUTLINE
UNIT A1A2A3bpcD
(1) E(2) Z(1)
DheLL
pywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.15
0.05 0.95 0.80 0.30 0.19 0.20 0.09 6.6 6.4 4.3 4.1
EhHE
3.1
2.9
4.5
4.3 0.65 6.6
6.2 0.5 0.2 8
0
o
o
0.13 0.10.21.0
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
0.75
0.50
SOT527-1 99-11-12
00-07-12
wM
bp
D
Dh
Eh
Z
heathsink side
e
0.25
110
20 11
θ
A
A1
A2
Lp
detail X
L
(A )
3
HE
E
c
vMA
X
A
y
0 2.5 5 mm
scale
HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm SOT527-1
A
max.
1.10
pin 1 index