Philips BGY685AD User manual

DATA SHEET
Product specification
Supersedes data of 1997 Apr 18 2001 Oct 22
DISCRETE SEMICONDUCTORS
BGY685AD
600 MHz, 18.5 dB gain push-pull
amplifier
b
ook, halfpage
M3D252

2001 Oct 22 2
Philips Semiconductors Product specification
600 MHz, 18.5 dB gain push-pull amplifier BGY685AD
FEATURES
•Excellent linearity
•Extremely low noise
•Silicon nitride passivation
•Rugged construction
•Gold metallization ensures
excellent reliability.
APPLICATIONS
•CATV systems operating over a
40 to 600 MHz frequency range.
DESCRIPTION
Hybrid high dynamic range cascode
amplifier module with Darlington
pre-stage dies operating at a voltage
supply of +24 V in a SOT115J
package.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output Fig.1 Simplified outline.
f
page
789
2351
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 18 19 dB
f = 600 MHz 18.75 −dB
Itot total current consumption (DC) VB=24V −250 mA
SYMBOL PARAMETER MIN. MAX. UNIT
ViRF input voltage −60 dBmV
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +100 °C

2001 Oct 22 3
Philips Semiconductors Product specification
600 MHz, 18.5 dB gain push-pull amplifier BGY685AD
CHARACTERISTICS
Table 1 Bandwidth 40 to 600 MHz; VB= 24 V; Tcase =30°C; ZS=Z
L=75Ω
Notes
1. Vp=V
q= 44 dBmV;
fp= 55.25 MHz; fq= 541.25 MHz;
measured at fp+f
q= 596.5 MHz.
2. Measured according to DIN45004B:
fp= 590.25 MHz; Vp=V
o
;
f
q= 597.25 MHz; Vq=V
o−6 dB;
fr= 599.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 588.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 18 19 dB
f = 600 MHz 18.75 −dB
SL slope cable equivalent f = 40 to 600 MHz 0.2 2.2 dB
FL flatness of frequency response f = 40 to 600 MHz −±0.3 dB
S11 input return losses f = 40 to 80 MHz 20 −dB
f = 80 to 160 MHz 19 −dB
f = 160 to 600 MHz 18 −dB
S22 output return losses f = 40 to 80 MHz 20 −dB
f = 80 to 160 MHz 19 −dB
f = 160 to 600 MHz 18 −dB
S21 phase response f = 50 MHz −45 +45 deg
CTB composite triple beat 85 channels flat;
Vo= 44 dBmV;
measured at 595.25 MHz
−−62 dB
Xmod cross modulation 85 channels flat;
Vo= 44 dBmV;
measured at 55.25 MHz
−−58 dB
CSO composite second order distortion 85 channels flat;
Vo= 44 dBmV;
measured at 596.5 MHz
−−60 dB
d2second order distortion note 1 −−70 dB
Vooutput voltage dim =−60 dB; note 2 62 −dBmV
F noise figure f = 50 MHz −6dB
f = 600 MHz −8dB
I
tot total current consumption (DC) note 3 −250 mA

2001 Oct 22 4
Philips Semiconductors Product specification
600 MHz, 18.5 dB gain push-pull amplifier BGY685AD
Table 2 Bandwidth 40 to 550 MHz; VB= 24 V; Tcase =30°C; ZS=Z
L=75Ω
Notes
1. Vp=V
q= 44 dBmV;
fp= 55.25 MHz; fq= 493.25 MHz;
measured at fp+f
q= 548.5 MHz.
2. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=V
o
;
f
q= 547.25 MHz; Vq=V
o−6 dB;
fr= 549.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 538.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 18 19 dB
f = 550 MHz 18.8 −dB
SL slope cable equivalent f = 40 to 550 MHz 0.2 2.2 dB
FL flatness of frequency response f = 40 to 550 MHz −±0.3 dB
S11 input return losses f = 40 to 80 MHz 20 −dB
f = 80 to 160 MHz 19 −dB
f = 160 to 550 MHz 18 −dB
S22 output return losses f = 40 to 80 MHz 20 −dB
f = 80 to 160 MHz 19 −dB
f = 160 to 550 MHz 18 −dB
S21 phase response f = 50 MHz −45 +45 deg
CTB composite triple beat 77 channels flat;
Vo= 44 dBmV;
measured at 547.25 MHz
−−65 dB
Xmod cross modulation 77 channels flat;
Vo= 44 dBmV;
measured at 55.25 MHz
−−60 dB
CSO composite second order distortion 77 channels flat;
Vo= 44 dBmV;
measured at 548.5 MHz
−−62 dB
d2second order distortion note 1 −−72 dB
Vooutput voltage dim =−60 dB; note 2 63 −dBmV
F noise figure f = 50 MHz −6dB
f = 550 MHz −7.5 dB
Itot total current consumption (DC) note 3 −250 mA

2001 Oct 22 5
Philips Semiconductors Product specification
600 MHz, 18.5 dB gain push-pull amplifier BGY685AD
Table 3 Bandwidth 40 to 450 MHz; VB= 24 V; Tcase =30°C; ZS=Z
L=75Ω
Notes
1. Vp=V
q= 46 dBmV;
fp= 55.25 MHz; fq= 391.25 MHz;
measured at fp+f
q= 446.5 MHz.
2. Measured according to DIN45004B:
fp= 440.25 MHz; Vp=V
o
;
f
q= 447.25 MHz; Vq=V
o−6 dB;
fr= 449.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 438.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 18 19 dB
f = 450 MHz 18.6 −dB
SL slope cable equivalent f = 40 to 450 MHz 0.2 1.8 dB
FL flatness of frequency response f = 40 to 450 MHz −±0.3 dB
S11 input return losses f = 40 to 80 MHz 20 −dB
f = 80 to 160 MHz 19 −dB
f = 160 to 450 MHz 18 −dB
S22 output return losses f = 40 to 80 MHz 20 −dB
f = 80 to 160 MHz 19 −dB
f = 160 to 450 MHz 18 −dB
S21 phase response f = 50 MHz −45 +45 deg
CTB composite triple beat 60 channels flat;
Vo= 46 dBmV;
measured at 445.25 MHz
−−66 dB
Xmod cross modulation 60 channels flat;
Vo= 46 dBmV;
measured at 55.25 MHz
−−58 dB
CSO composite second order distortion 60 channels flat;
Vo= 46 dBmV;
measured at 446.5 MHz
−−67 dB
d2second order distortion note 1 −−75 dB
Vooutput voltage dim =−60 dB; note 2 65 −dBmV
F noise figure f = 50 MHz −6dB
f = 450 MHz −7dB
I
tot total current consumption (DC) note 3 −250 mA

2001 Oct 22 6
Philips Semiconductors Product specification
600 MHz, 18.5 dB gain push-pull amplifier BGY685AD
PACKAGE OUTLINE
UNIT A2
max. cee
1q
Q
max. q1q2U1
max. U2W
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 20.8 9.1 0.51
0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15
3.85 2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
bF
p
6-32
UNC
yw
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0 5 10 mm
scale
A
max. D
max. L
min.
E
max. Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
U1q
q2
q1
b
F
S
A
Z p
E
A2
L
c
d
Q
U2
M
w
78923
We
e
1
5
p
1
d
max.
yMB
yMB
B
99-02-06
yMB

2001 Oct 22 7
Philips Semiconductors Product specification
600 MHz, 18.5 dB gain push-pull amplifier BGY685AD
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyofthese products,conveys nolicence ortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613518/04/pp8Date of release: 2001 Oct 22 Document order number: 9397 750 08806
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