Power integrations 2SC0108T2Dx-xx User manual

SCALE™-2 2SC0108T2Dx-xx
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SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
Dual Channel Ultra-compact Low-cost SCALE™-2 Driver Core
Abstract
The new low-cost SCALE™-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad
applicability. The driver was designed for universal applications requiring high reliability. The 2SC0108T2Dx-xx
drives all usual IGBT modules up to 650V (2SC0108T2Dx-07) or 1200V (2SC0108T2Dx-12). The embedded
paralleling capability allows easy inverter design covering higher power ratings. Multi-level topologies are also
supported.
The 2SC0108T2Dx-xx is the most compact driver core available for industrial applications, with a footprint of
only 45mm x 34.3mm and an insertion height of max. 16mm. It allows even the most restricted insertion
spaces to be efficiently used.
Fig. 1 2SC0108T2Dx-xx driver core

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 2
Contents
Abstract.......................................................................................................................................... 1
Contents ......................................................................................................................................... 2
Driver Overview ............................................................................................................................. 4
Mechanical Dimensions.................................................................................................................. 5
Pin Designation .............................................................................................................................. 7
Recommended Interface Circuitry for the Primary Side Connector .............................................. 8
Description of Primary Side Interface ........................................................................................... 8
General...............................................................................................................................8
VCC terminal .......................................................................................................................8
MOD (mode selection) .........................................................................................................9
INA, INB (channel drive inputs, e.g. PWM)........................................................................... 10
SO1, SO2 (status outputs).................................................................................................. 10
TB (input for adjusting the blocking time Tb)........................................................................ 10
Recommended Interface Circuitry for the Secondary Side Connectors ...................................... 11
Description of Secondary Side Interfaces.................................................................................... 11
General............................................................................................................................. 11
Emitter terminal (VEx)........................................................................................................ 11
Active clamping (ACLx) ...................................................................................................... 12
Collector sense (VCEx) with resistors................................................................................... 12
Desaturation protection with sense diodes ........................................................................... 14
Disabling the VCE,sat detection.............................................................................................. 16
Gate turn-on (GHx) and turn-off (GLx) terminals .................................................................. 16
How Do 2SC0108T2Dx-xx SCALE-2 Drivers Work in Detail? ....................................................... 17
Power supply and electrical isolation ................................................................................... 17
Power-supply monitoring.................................................................................................... 17
Parallel connection of 2SC0108T2Dx-xx ............................................................................... 17
3-level or multilevel topologies............................................................................................ 17
Additional application support for 2SC0108T2Dx-xx .............................................................. 17
Bibliography ................................................................................................................................. 18
The Information Source: SCALE-2 Driver Data Sheets ................................................................ 19
Quite Special: Customized SCALE-2 Drivers ................................................................................ 19
Technical Support ........................................................................................................................ 19
Quality..........................................................................................................................................19

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
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Legal Disclaimer ........................................................................................................................... 19
Ordering Information................................................................................................................... 20
Information about Other Products .............................................................................................. 20
Manufacturer................................................................................................................................ 20
Power Integrations Worldwide High Power Customer Support Locations.................................. 21

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 4
Driver Overview
The 2SC0108T2Dx-xx is a low cost driver core equipped with Power Integrations' latest SCALE-2 chipset /1/.
The SCALE-2 chipset is a set of application-specific integrated circuits (ASICs) that cover the main range of
functions needed to design intelligent gate drivers. The SCALE-2 driver chipset is a further development of the
proven SCALE technology /2/.
The 2SC0108T2Dx-xx targets low- and medium-power, dual-channel IGBT applications such as general
purpose drives, UPS, solar converters and automotive applications. The 2SC0108T2Dx-xx comprises a
complete dual-channel IGBT driver core, fully equipped with an isolated DC/DC converter, short-circuit
protection, advanced active clamping and supply-voltage monitoring.
Fig. 2 Block diagram of the driver core 2SC0108T2Dx-xx

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 5
Mechanical Dimensions
Fig. 3 Interactive 3D drawing of 2SC0108T2Dx-xx

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 6
Fig. 4 Mechanical drawing of 2SC0108T2Dx-xx
The primary side and secondary side pin grid is 2.54mm (100mil) with a pin cross section of
0.64mm x 0.64mm. Total outline dimensions of the board are 34.3mm x45mm. The total height of the
driver is max. 16mm measured from the bottom of the pin bodies to the top of the populated PCB.
Recommended diameter of solder pads: Ø 2mm (79 mil)
Recommended diameter of drill holes: Ø 1mm (39 mil)

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 7
Pin Designation
Pin No. and Name
Function
Primary Side
1
GND
Ground
2
INA
Signal input A; non-inverting input relative to GND
3
INB
Signal input B; non-inverting input relative to GND
4
VCC
Supply voltage; 15V supply for primary side
5
TB
Set blocking time
6
SO2
Status output channel 2; normally high-impedance, pulled down to low on fault
7
SO1
Status output channel 1; normally high-impedance, pulled down to low on fault
8
MOD
Mode selection (direct/half-bridge mode)
Secondary Sides
9
GH1
Gate high channel 1; pulls gate high through turn-on resistor
10
VE1
Emitter channel 1; connect to (auxiliary) emitter of power switch
11
GL1
Gate low channel 1; pulls gate low through turn-off resistor
12
ACL1
Active clamping feedback channel 1; leave open if not used
13
14
15
16
VCE1
Free
Free
Free
VCE sense channel 1; connect to IGBT collector through resistor network
17
GH2
Gate high channel 2; pulls gate high through turn-on resistor
18
VE2
Emitter channel 2; connect to (auxiliary) emitter of power switch
19
GL2
Gate low channel 2; pulls gate low through turn-off resistor
20
ACL2
Active clamping feedback channel 2; leave open if not used
21
VCE2
VCE sense channel 2; connect to IGBT collector through resistor network
Note: Pins with the designation “Free” are not physically present.

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
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Recommended Interface Circuitry for the Primary Side Connector
Fig. 5 Recommended user interface of 2SC0108T2Dx-xx (primary side)
Description of Primary Side Interface
General
The primary side interface of the driver 2SC0108T2Dx-xx is very simple and easy to use.
The driver primary side is equipped with an 8-pin interface connector with the following terminals:
1 x power-supply terminal
2 x drive signal inputs
2 x status outputs (fault returns)
1 x mode selection input (half-bridge mode / direct mode)
1 x input to set the blocking time
All inputs and outputs are ESD-protected. Moreover, all digital inputs have Schmitt-trigger characteristics.
VCC terminal
The driver has one VCC terminal on the interface connector. It supplies the primary side electronics as well as
the DC-DC converter to supply the secondary sides with 15V.
The driver limits the inrush current at startup and no external current limitation of the voltage source for VCC
is needed.

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
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MOD (mode selection)
The MOD input allows the operating mode to be selected with a resistor connected to GND.
Direct mode
If the MOD input is connected to GND, direct mode is selected. In this mode, there is no interdependence
between the two channels. Input INA directly influences channel 1 while INB influences channel 2. High level
at an input (INA or INB) always results in turn-on of the corresponding IGBT. In a half-bridge topology, this
mode should be selected only when the dead times are generated by the control circuitry so that each IGBT
receives its own drive signal.
Caution: Synchronous or overlapping timing of both switches of a half-bridge basically shorts the DC-link.
Half-bridge mode
If the MOD input is connected to GND with a resistor 71k<Rm<181k, half-bridge mode is selected. In this
mode, the inputs INA and INB have the following functions: INA is the drive signal input while INB acts as the
enable input (see Fig. 6). It is recommended to place a capacitor Cm=22nF in parallel to Rmin order to reduce
the deviation between the dead times at the rising and falling edges of INA respectively.
When input INB is low level, both channels are blocked. If it goes high, both channels are enabled and follow
the signal on the input INA. At the transition of INA from low to high, channel 2 turns off immediately and
channel 1 turns on after a dead time Td.
Fig. 6 Signals in half-bridge mode
The value of the dead time Tdis determined by the value of the resistor Rmaccording to the following formula
(typical value):
4.56][33][  sTkR dm 
with 0.5μs<Td<3.8μs and 73kΩ<Rm<182kΩ

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
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INA, INB (channel drive inputs, e.g. PWM)
INA and INB are basically drive inputs, but their function depends on the MOD input (see above). They safely
recognize signals in the whole logic-level range between 3.3V and 15V. Both input terminals feature Schmitt-
trigger characteristics (refer to the driver data sheet /3/). An input transition is triggered at any edge of an
incoming signal at INA or INB.
SO1, SO2 (status outputs)
The outputs SOx have open-drain transistors. When no fault condition is detected, the outputs have high
impedance. An internal current source of 500μA pulls the SOx outputs to a voltage of about 4V when leaved
open. When a fault condition (primary side supply undervoltage, secondary side supply undervoltage, IGBT
short circuit) is detected, the corresponding status output SOx goes to low (connected to GND).
The diodes D1and D2must be Schottky diodes and must only be used when using 3.3V logic. For 5V…15V
logic, they can be omitted.
The maximum SOx current in a fault condition must not exceed the value specified in the driver data sheet
/3/.
Both SOx outputs can be connected together to provide a common fault signal (e.g. for one phase). However,
it is recommended to evaluate the status signals individually to allow fast and precise fault diagnosis.
How the status information is processed
a) A fault on the secondary side (detection of short circuit of IGBT module or supply undervoltage) is
transmitted to the corresponding SOx output immediately. The SOx output is automatically reset
(returning to a high impedance state) after a blocking time Tbhas elapsed (refer to “TB (input for
adjusting the blocking time Tb)” for timing information).
b) A supply undervoltage on the primary side is indicated to both SOx outputs at the same time. Both SOx
outputs are automatically reset (returning to a high impedance state) when the undervoltage on the
primary side disappears.
TB (input for adjusting the blocking time Tb)
The terminal TB allows the blocking time Tbto be set by connecting a resistor Rbto GND (see Fig. 5). The
following equation calculates the value of Rbconnected between pins TB and GND in order to program the
desired blocking time Tb(typical value):
51][0.1][  msTkR bb
with 20ms<Tb<130ms and 71kΩ<Rb<181kΩ
The blocking time can also be set to a minimum of 9µs (typical) by selecting Rb=0Ω. The terminal TB must not
be left floating.
Note: It is also possible to apply a stabilized voltage at TB. The following equation is used to calculate the
voltage Vbbetween TB and GND in order to program the desired blocking time Tb(typical value):
02.1][02.0][  msTVV bb
with 20ms<Tb<130ms and 1.42<Vb<3.62V

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
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Recommended Interface Circuitry for the Secondary Side Connectors
Fig. 7 Recommended user interface of 2SC0108T2Dx-xx (secondary sides).
Description of Secondary Side Interfaces
General
Each driver’s secondary side (driver channel) is equipped with a 5-pin interface connector with the following
terminals (x stands for the number of the drive channel 1 or 2):
1 x emitter terminal VEx
1 x active clamping terminal ACLx
1 x collector sense terminal VCEx
1 x turn-on gate terminal GHx
1 x turn-off gate terminal GLx
All inputs and outputs are ESD-protected.
Emitter terminal (VEx)
The emitter terminal must be connected to the IGBT auxiliary emitter with the circuit shown in Fig. 7.

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 12
Active clamping (ACLx)
Active clamping is a technique designed to partially turn on the power semiconductor as soon as the collector-
emitter (drain-source) voltage exceeds a predefined threshold. The power semiconductor is then kept in linear
operation.
Basic active clamping topologies implement a single feedback path from the IGBT’s collector through transient
voltage suppressor devices (TVS) to the IGBT gate. The 2SC0108T2Dx-xx supports Power Integrations'
advanced active clamping, where the feedback is also provided to the driver’s secondary side at pin ACLx: as
soon as the voltage on the right side of the 20Ωresistor (see Fig. 7) exceeds about 1.3V, the turn-off MOSFET
is progressively switched off in order to improve the effectiveness of the active clamping and to reduce the
losses in the TVS. The turn-off MOSFET is completely off when the voltage on the right side of the 20Ω
resistors (see Fig. 7) approaches 20V (measured to COMx).
It is recommended to use the circuit shown in Fig. 7. The following parameters must be adapted to the
application:
TVS D2x, D3x. It is recommended to use:
- Six 80V TVS with 600V IGBTs with DC-link voltages up to 430V. Good clamping results can be
obtained with six unidirectional TVS P6SMBJ70A from Semikron or with six unidirectional TVS
SMBJ70A-E3 from Vishay.
- Six 150V TVS with 1200V IGBTs with DC-link voltages up to 800V. Good clamping results can be
obtained with six unidirectional TVS SMBJ130A-E3 from Vishay or six unidirectional TVS SMBJ130A-
TR from ST. Note that 1200V IGBTs can only be driven with the 2SC0108T2Dx-12 or the
2SC0108T2Dx-07 if the maximum operating voltage under absolute maximum ratings (see driver
data sheet /3/) is not exceeded (e.g. specific 3-level topologies such as NPC2).
The use of bidirectional TVS is not required.
Note that it is possible to modify the number of TVS in a chain. The active clamping efficiency can be
improved by increasing the number of TVS used in a chain if the total threshold voltage remains at the
same value. Note also that the active clamping efficiency is highly dependent on the type of TVS used
(e.g. manufacturer).
Raclx and Caclx: These parameters allow the effectiveness of the active clamping as well as the losses in
the TVS and the IGBT to be optimized. It is recommended to determine the value with measurements
in the application. Typical values are: Raclx=0…150Ω and Raclx*Caclx=100ns…500ns. Raclx=0Ωis
recommended to improve the effectiveness of active clamping.
D4x: It is recommended to use TVS diodes with a stand-off voltage of 33V (peak current >15A
depending on the application) as SMBJ33A from Vishay, ST, Fairchild or P6SMBJ33A from Diotec.
D6x: It is recommended to use TVS diodes with stand-off voltages >60V (peak current >1A) as
SMAJ70A from Vishay, ST, Fairchild or P4SMAJ70A from Diotec).
Please note that the 20Ω resistor as well as diodes D4x and D6x must not be omitted if advanced active
clamping is used. If advanced active clamping is not used, the 20Ω resistor as well as diodes D4x and D6x can
be omitted.
Collector sense (VCEx) with resistors
The collector sense of each channel of the 2SC0108T2Dx-xx must be connected to the IGBT collector or
MOSFET drain with the circuit shown in Figs. 6 or 7 in order to detect an IGBT or MOSFET short circuit.
In an IGBT off-state, the driver’s internal MOSFET connects pin VCEx to pin COMx. The capacitor Cax is then
precharged/discharged to the negative supply voltage, which is about -8V referred to VEx (red circle in Fig. 8

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 13
left). During this time, a current flows from the collector (blue circle in Fig. 8) via the resistor network and the
diode BAS416 to GHx. The current is limited by the resistor chain.
It is recommended to dimension the resistor value of Rvcex in order to obtain a current of about IRvcex=0.6-1mA
flowing through Rvcex (e.g. 400-650kΩ for VDC-LINK=400V). The current through Rvcex must not exceed 1mA. A
high-voltage resistor as well as series-connected resistors may be used. In any case, the minimum creepage
distance required for the application must be considered.
The reference threshold is internally set to 9.3V. The driver safely protects the IGBT against short circuit, but
not necessarily against overcurrent. Overcurrent protection has a lower timing priority and is recommended to
be realized within the host controller.
Fig. 8 V
CE
desaturation protection with resistors
At IGBT turn-on and in the on-state, the driver’s internal MOSFET turns off. While VCE decreases (blue curve in
Fig. 8), Cax is charged from the COMx potential to the IGBT saturation voltage (red curve in Fig. 8). The time
required to charge Cax depends on the DC bus voltage, the value of the resistor Rax and the capacitor Cax.
During the response time, the VCE monitoring circuit is inactive. The response time is the time that elapses
after turn-on of the power semiconductor until the collector voltage is measured. It corresponds to the short-
circuit duration.
For 600V and 650V IGBTs, it is recommended to set Rax=62kΩ. If the current through the resistor Rvcex is in
the range of IRvcex=0.6-1mA, the resulting response time is given in Table 1 for several values of Cax:
Cax [pF]
Response time (typical value) [μs]
0
1.0
15
2.3
22
2.9
27
3.4
33
3.9
39
4.5
Table 1 Response time as a function of Cax for 600V and 650V IGBTs (Rax=62kΩ)
For 1200V IGBTs –which can only be used with the 2SC0108T2Dx-12 or the 2SC0108T2Dx-07 if the maximum
operating voltage under absolute maximum ratings (see driver data sheet /3/) is not exceeded (e.g. specific 3-
level topologies such as NPC2) –it is recommended to set Rax=120kΩ. The resulting response time (typical
value) is given in Table 2 for Rvcex=1.8MΩ and several values of Cax:

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 14
Cax [pF]
Response time (typical value) [μs]
0
1.4
15
4.5
22
5.9
33
8.2
47
11.2
Table 2 Response time as a function of Cax for 1200V IGBTs (Rax=120kΩ, Rvcex=1.8MΩ, VDC-LINK>550V)
As the parasitic capacitances on the host PCB may influence the response time, it is recommended to measure
it in the final design. It is important to define a response time which is shorter than the maximum permitted
short-circuit duration of the power semiconductor used.
Note that the response time typically increases at lower values of the DC-link voltage.
The diode D1x in Fig. 7 must have a very low leakage current and a blocking voltage >40V (e.g. BAS416).
Schottky diodes must be explicitly avoided.
The components Cax, Rax and D1x must be placed as close as possible to the driver. A large collector-emitter
loop must also be avoided.
When a short-circuit fault is detected, the driver switches off the corresponding power semiconductor. The
fault status is immediately transferred to the corresponding SOx output of the affected channel. The power
semiconductor is kept in the off-state (non-conducting) and the fault is shown at pin SOx as long as the
blocking time Tbis active.
The blocking time Tbis applied independently to each channel. Tbstarts as soon as a fault has been detected.
Desaturation protection with sense diodes
2SC0108T2Dx-xx also provides desaturation protection with high-voltage diodes as shown in Fig. 9. However,
the use of high-voltage diodes has some disadvantages compared to the use of resistors:
Common-mode current relating to the rate of change dvce/dt of the collector-emitter voltage: High-
voltage diodes have large junction capacitances Cj. These capacitances in combination with the dvce/dt
generate a common-mode current Icom flowing in and out of the measurement circuit.
dt
dv
CI ce
jcom 
Price: High-voltage diodes are more expensive than standard 0805/150V or 1206/200V SMD resistors.
Availability: Standard thick-film resistors are comparatively easier to source on the market.
Limited ruggedness: The reaction time does not increase at lower VCE levels. Consequently, false
triggering may occur at higher IGBT temperatures, higher collector currents, resonant switching or
phase-shift PWM. This may lead to limited IGBT utilization: the collector current may be limited to
values smaller than twice the nominal current, or the short-circuit withstand capability may be
reduced.
During the IGBT off-state, D4x (and Rax) sets the VCEx pin to COMx potential, thereby precharging/discharging
the capacitor Cax to the negative supply voltage, which is about -8V referred to VEx. At IGBT turn-on, the
capacitor Cax is charged via Rax. When the IGBT collector-emitter voltage drops below that limit, the voltage of
Cax is limited via the high-voltage diodes D1x and D2x. The voltage across Cax can be calculated by:

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 15
)
330
15
330()2()1(
)2()1( 


ax
xDFxDFCEsat
xDFxDFCEsatCax R
VVVV
VVVV
The reference voltage Vrefx which is internally set to 9.3V must be higher than Vcax.
Fig. 9 Recommended circuit for desaturation protection with sense diodes (one channel shown)
The value of the resistance Rax can be calculated with the following equation in order to program the desired
response time Tax at turn-on:
)
7.5
15
ln(][
][1000
≈][
V
VV
pFC
sT
kR GLx
ax
ax
ax 




VGLx is the absolute value of the turn-off voltage at the driver output. It depends on the driver load and can be
found in the driver data sheet /3/.
Recommended components D1x/D2x/D3x/D4x and values for Rax and Cax are:
High-voltage diodes D1x/D2x: 1x 1N4007 for 600V and 650V IGBT
2x 1N4007 for 1200V IGBT
D3x: Transient voltage suppressor of the voltage class 12V…15V with small junction capacitance as
CDDFN2-12C from Bourns.
D4x: High-speed diode as BAS316. Schottky diodes must be avoided.
Rax=24kΩ…62kΩ
Cax=100pF…560pF
Note that Cax must include the parasitic capacitance of the transient voltage suppressor D3x and the PCB.
Note also that the instantaneous VCE threshold voltage is determined by the internally set reference voltage of
9.3V minus the voltage across the 330Ω resistor as well as the forward voltages across D1x and D2x.
The minimum off-state duration should not be shorter than about 1µs in order not to significantly reduce the
response time for the next turn-on pulse.
Example: A resistor of Rax≈33kΩ must be used to define a response time of 4.7μs with Cax=100pF and
VGLx=9V.

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
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Disabling the VCE,sat detection
To disable the VCE,sat measurement of 2SC0108T2Dx-xx, a resistor with a minimum value of 33kΩmust be
placed between VCEx and VEx according to Fig. 10.
Fig. 10 Disabling the VCE,sat detection
Gate turn-on (GHx) and turn-off (GLx) terminals
These terminals allow the turn-on (GHx) and turn-off (GLx) gate resistors to be connected to the gate of the
power semiconductor. The GHx and GLx pins are available as separated terminals in order to set the turn-on
and turn-off resistors independently without the use of an additional diode. Please refer to the driver data
sheet /3/ for the limit values of the gate resistors used.
A resistor between GLx and VEx of 22k (higher values are also possible) may be used in order to provide a
low-impedance path from the IGBT gate to the emitter even if the driver is not supplied with power. Lower
resistance values are not allowed.
A transient voltage suppressor device (D5x) may be used between gate and emitter (e.g. SMBJ13CA) if the
gate-emitter voltage becomes too high in the IGBT short-circuit condition, thus leading to excessive short-
circuit currents.
Note however that it is not advisable to operate the power semiconductors within a half-bridge with a driver in
the event of a low supply voltage. Otherwise, a high rate of increase of VCE may cause partial turn-on of these
IGBTs.

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 17
How Do 2SC0108T2Dx-xx SCALE-2 Drivers Work in Detail?
Power supply and electrical isolation
The driver is equipped with a DC/DC converter to provide an electrically insulated power supply to the gate
driver circuitry. All transformers (DC/DC and signal transformers) feature safe isolation to EN 50178,
protection class II between primary side and either secondary side.
Note that the driver requires a stabilized supply voltage.
Power-supply monitoring
The driver’s primary side as well as both secondary-side driver channels are equipped with a local
undervoltage monitoring circuit.
In the event of a primary-side supply undervoltage, the power semiconductors are driven with a negative gate
voltage to keep them in the off-state (the driver is blocked) and the fault is transmitted to both outputs SO1
and SO2 until the fault disappears.
In case of a secondary-side supply undervoltage, the corresponding power semiconductor is driven with a
negative gate voltage to keep it in the off-state (the channel is blocked) and a fault condition is transmitted to
the corresponding SOx output. The SOx output is automatically reset (returning to a high impedance state)
after the blocking time.
Within a half-bridge, it is advised not to operate the IGBTs with an IGBT driver in the event of a
low supply voltage. Otherwise, a high rate of increase of VCE may cause partial turn-on of these
IGBTs.
Parallel connection of 2SC0108T2Dx-xx
If parallel connection of 2SC0108T2Dx-xx drivers is required, please refer to the application note
AN-0904 /5/ on www.power.com/igbt-driver/go/app-note.
3-level or multilevel topologies
If 2SC0108T2Dx-xx drivers are to be used in 3-level or multilevel topologies, please refer to the application
note AN-0901 /6/ on www.power.com/igbt-driver/go/app-note.
Additional application support for 2SC0108T2Dx-xx
For additional application support using 2SC0108T2Dx-xx drivers, please refer to the application note AN-1101
/4/ on www.power.com/igbt-driver/go/app-note

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 18
Bibliography
/1/ Paper: Smart Power Chip Tuning, Bodo’s Power Systems, May 2007
/2/ “Description and Application Manual for SCALE™ Drivers”, Power Integrations
/3/ Data sheet SCALE™-2 driver core 2SC0108T2D0-07 and 2SC0108T2D0-12, Power Integrations
/4/ Application note AN-1101: Application with SCALE™-2 Gate Driver Cores, Power Integrations
/5/ Application note AN-0904: Direct Paralleling of SCALE™-2 Gate Driver Cores, Power Integrations
/6/ Application note AN-0901: Methodology for Controlling Multi-Level Converter Topologies with SCALE™-
2 IGBT Drivers, Power Integrations
Note: The Application Notes are available on the Internet at www.power.com/igbt-driver/go/app-note and
the papers at www.power.com/igbt-driver/go/papers.

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 19
The Information Source: SCALE-2 Driver Data Sheets
Power Integrations offers the widest selection of gate drivers for power MOSFETs and IGBTs for almost any
application requirements. The largest website on gate-drive circuitry anywhere contains all data sheets,
application notes and manuals, technical information and support sections: www.power.com.
Quite Special: Customized SCALE-2 Drivers
If you need an IGBT driver that is not included in the delivery range, please don’t hesitate to contact Power
Integrations or your Power Integrations sales partner.
Power Integrations has more than 25 years experience in the development and manufacture of intelligent gate
drivers for power MOSFETs and IGBTs and has already implemented a large number of customized solutions.
Technical Support
Power Integrations provides expert help with your questions and problems:
www.power.com/igbt-driver/go/support
Quality
The obligation to high quality is one of the central features laid down in the mission statement of Power
Integrations Switzerland GmbH. Our total quality management system assures state-of-the-art processes
throughout all functions of the company, certified by ISO9001:2008 standards.
Legal Disclaimer
The statements, technical information and recommendations contained herein are believed to be accurate as
of the date hereof. All parameters, numbers, values and other technical data included in the technical
information were calculated and determined to our best knowledge in accordance with the relevant technical
norms (if any). They may base on assumptions or operational conditions that do not necessarily apply in
general. We exclude any representation or warranty, express or implied, in relation to the accuracy or
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damage suffered by any person arising therefrom is expressly disclaimed.

SCALE™-2 2SC0108T2Dx-xx
Preliminary Description & Application Manual
www.power.com/igbt-driver Page 20
Ordering Information
The general terms and conditions of delivery of Power Integrations Switzerland GmbH apply.
Type Designation Description
2SC0108T2D0-07 Dual-channel SCALE-2 driver core for IGBTs up to 650V
2SC0108T2D0-12 Dual-channel SCALE-2 driver core for IGBTs up to 1200V
Product home page: www.power.com/igbt-driver/go/2SC0108T
Refer to www.power.com/igbt-driver/go/nomenclature for information on driver nomenclature
Information about Other Products
For other driver cores:
Direct link: www.power.com/igbt-driver/go/cores
For other drivers, product documentation, evaluation systems and application support:
Please click onto: www.power.com
Manufacturer
Power Integrations Switzerland GmbH
Johann-Renfer-Strasse 15
2504 Biel-Bienne, Switzerland
Phone [phone]
Fax [phone]
Email [e-mail]
Website www.power.com/igbt-driver
© 2011…2015 Power Integrations Switzerland GmbH. All rights reserved.
We reserve the right to make any technical modifications without prior notice. Version 2.1 from 2015-03-24