Sanyo EP124 User manual

Discrete Devices
2008-6

■Devices for Mobile Equipment
■Devices for SW Power Supply
■Devices for Lighting
■Devices for Modem
■Devices for Infrared Sensor
■Devices for Satellite/GPS
■FM Transmitter
p2
p14
p28
p31
p31
p32
p33
Contents
SANYO's environmentally-considered discrete "ECoP"
contributes to the realization of comfortable life in
various aspects.
SANYO Discrete Devices
SANYO Discrete Devices
Invisible Friendly Smart
We provide discrete solutions based on "LIGHT, FAST, EFFICIENT & FRIENDLY"
concept to contribute to the creation of "Symbiosis Next-generation Electronic Devices"
aiming at the realization of better life.
Ultra-small
Thin-form
Light-weight
High-efficient
Energy-saving
Multi-function
High-performance
High-integration

2
Devices for Mobile Equipment
3
Battery
Down Converter (Low end)
Down Converter (High end)
Up Converter (Low end)
Up Converter (High end)
AC Adapter
CPU
Control IC
Charger
Li-ion Battery
DC-DC Converter / Load SW
LCD-Backlight
System
IrDA
Flash
CCD etc.
LCD
Card IF
USB IF
M
MIC
P3
P5
P6
P9
P10
P11
P11
P12
■Application Block
[GSM]
Li-ion
battery
AC adapter
Power
management IC
Input
5V to 6V/0.5A to 1A Q1 D1 Q1 Q2
■Charger
MOSFETs (Pch) + Schottky Barrier Diodes (or MOSFETs (Pch))
Type No. Package 2 in 1
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VDSS/
VR
[V]
VGSS
[V]
ID/
IO
[A]
PD
[W]
RDS(on) [Ω]
VGS=2.5V
VF[V]
IF
[A]
typ max typ max
Q1+D1
CPH5802 CPH5 Pch MOS 20 ±10 2 0.9 0.140 0.200 - - -
SBD 15 - 1 - - - 1 0.35 0.4
VEC2822
VEC8
Pch MOS 20 ±10 3.5 1 0.077 0.108 - - -
SBD 15 - 2 - - - 2 0.5 0.56
VEC2818 Pch MOS 20 ±10 3.5 1 0.077 0.108 - - -
SBD 30 - 2 - - - 2 0.45 0.5
Q1+Q2
VEC2303 VEC8 Pch MOS 12 ±8 4 0.9 0.054 0.075 - - -
VEC2301 Pch MOS 20 ±10 3 0.9 0.087 0.120 - - -
ECH8654
ECH8
Pch MOS 20 ±10 5 1.3 0.041 0.058 - - -
ECH8611 Pch MOS 12 ±9 5 1.3 0.045 0.065 - - -
❈ECH8652 Pch MOS 12 ±10 6 1.3 0.031 0.045 - - -
[CDMA]
Li-ion
battery
AC adapter
Power
management IC
Input
5V to 6V/0.5A to 1A
Q1
Q2
Transistors (PNP) + MOSFETs (Pch)
Type No. Package 2 in 1
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VCEO/
VDSS
[V]
IC/
ID
[A]
PC
PD
[W]
VCE
(sat) [V]
RDS(on) [Ω]
VGS=2.5V
IC
[A]
IB
[mA] typ max typ max
Q1+Q2
VEC2904
VEC8
PNP TR 30 3 1.1 1.5 75 0.11 0.16 - -
Pch MOS 12 4 1.1 - - - - 0.054 0.074
VEC2905 PNP TR 30 3 1.1 1.5 75 0.11 0.16 - -
Pch MOS 20 3 1.1 - - - - 0.087 0.120
Q1
CPH6122 CPH6 PNP TR 30 3 1.3 1.5 75 0.120 0.180 - -
❈MCH6122 MCPH6 PNP TR 30 3 1.0 1.5 75 0.120 0.180 - -
❈VEC1106 VEC8 PNP TR 30 5 1.4 1.5 75 0.105 0.155 - -
Q2
MCH6320
MCPH6
Pch MOS 12 5 1.5 - - - - 0.047 0.066
MCH6321 Pch MOS 20 4 1.5 - - - - 0.072 0.098
MCH6336 Pch MOS 12 5 1.5 - - - - 0.047 0.066
MCH6337 Pch MOS 20 4.5 1.5 - - - - 0.053 0.075
ECH8304 ECH8 Pch MOS 12 9.5 1.6 - - - - 0.018 0.026
ECH8301 Pch MOS 20 8 1.6 - - - - 0.026 0.037
EMH1303 EMH8 Pch MOS 12 7 1.5 - - - - 0.027 0.036
❈: Development
❈: Development

4
Devices for Mobile Equipment
5
[CDMA]
Li-ion
battery
AC adapter
External connection
terminal
Power
management IC
MOSFET1
Main unit circuit
(load)
SBD1
Charging terminal
USB bus power
SBD2
Input
5V to 6V/0.6A to 1A
TR1
TR2
Recommended Bipolar Transistors (PNP)
VCEO
[V]
IC
[A] MCPH3 MCPH6 CPH3 CPH6 VEC8 VEC8(2 in 1)
-12 2.5 MCH3143 CPH3143 ❈ VEC1105
3.0 MCH3106 CPH3121 CPH6121 ❈ VEC1104
-15 6.0 CPH3107
-30
2.0 MCH3144 CPH3144
3.0 MCH3109 ❈ MCH6122 CPH3122 CPH6122 VEC2102
5.0 CPH3110 ❈ VEC1106
Recommended Schottky Barrier Diodes (Single)
[Features]
• Package size: 1.6×0.8mm and IO=1A, Minimum in industry size !
• Thickness of Package: Typ. 0.60mm
VR
[V]
IO
[A] ECSP1008-2 ECSP1608-4
30
0.2 SS0203EJ
SB0203EJ
0.5 SS0503EC SS0503EJ
SB0503EC SB0503EJ
1.0 SS1003EJ
SB1003EJ
Recommended Schottky Barrier Diodes (2 in 1: Parallel type)
[Features]
• Package size: 2.8×2.9mm and 30V/3A [SBS813/SBE813]
• Package size: 2.0×2.1mm and 30V/2A [SBS818], 15V/2A [SBS817]
• Thickness of Package: Typ. 0.75mm
VR
[V]
IO
[A] MCPH5 EMH8 CPH5 VEC8
15
1.0 SBS808M SBS804
SBE808
2.0 SBS817
❈ SBE817
30
0.5 SBS806M SBE805
1.0 ❈ SBS810 SBE807 SBS814
2.0 SBS818 SBS811
❈ SBE818 SBE811
3.0 SBS813
SBE813
❈: Development
❈: Development
Recommended MOSFETs (Nch)
VDSS
[V] EMH8 ECH8 TSSOP8 SOP8
20
EMH2405 ECH8601R FTD2011A FW231A
EMH2407 ECH8649 FTD2017R FW232A
ECH8651R
30 EMH2402 ECH8622R FTD2019A
Recommended MOSFETs for Machine Tools
VDSS
[V] Polarity SMP ZP Drive
30 Nch 2SK4163 1.8V Drive
Pch TM1829Z
45 Nch 2SK4164
4.0V Drive
Pch TM1831Z
60 Nch 2SK4066 2SK4044
Pch 2SJ683
75 Nch 2SK4065 2SK4165
80 Pch 2SJ686
100 Nch 2SK4045
Pch 2SJ684
P+
P-
Control IC
Battery Protection
B+
B-
CELL
■Li-ion Battery

6
Devices for Mobile Equipment
7
(1) DC-DC Converter
Recommended MOSFETs
Back Converter
(Step Down) Package Type No. VDSS [V]
RDS(on)
max [mΩ]
VGS=4V
(*: VGS=4.5V)
Drive
[V] SBD
SCH6
SCH2809 -12 290* 1.8
15V/0.5ASCH2810 530 2.5
SCH2811 -30 830 4.0
MCPH5
MCH5815 -12 290* 1.8 15V/0.5A
MCH5818 530
4.0MCH5802 -30 1090 30V/0.5A
MCH5805 -60 2300 50V/0.1A
CPH5
CPH5812
-12
290* 1.8 15V/2A
CPH5815 290* 15V/0.5A
CPH5818 490* 4.0
CPH5802 -20 145 1.8 15V/1A
CPH5835 235 2.5
CPH5822 -30 290 4.0 30V/0.5A
VEC8 VEC2811 -30 168 4.0 30V/2A
VEC2817 -12 62* 2.5 15V/3A
Synchronous Back Converter
(Pch + Nch or Nch + Nch) Package Type No. VDSS [V]
RDS(on)
max [mΩ]
VGS=4V
(*: VGS=4.5V)
Drive
[V] SBD
SCH6
SCH1305 -12 310*
1.8 - SCH1406
20 210 SCH2806 15V/0.5A
SCH2816 440 4.0
MCPH3/5
MCH3317 -12 290*
1.8 - MCH3456 15 160
MCH5811 20 210 15V/1A
MCH5819 30 520 4.0 30V/0.5A
CPH3/5
CPH3321 -12 98* 1.8
-CPH3313 -20 235 2.5
CPH3337 -30 77 4.0
CPH5809 30 90 2.5
30V/0.5ACPH5819 30 520 4.0
CPH5805 30 150
Boost Converter
(Step Up) Package Type No. VDSS [V]
RDS(on)
max [mΩ]
VGS=4V
Drive
[V] SBD
SCH6
SCH2817 15 160 1.8 15V/0.5A
SCH2806 20 210
SCH2819 30 215 2.5 30V/0.5A
SCH2808 560 4.0
MCPH5
MCH5826 15 160 1.8 15V/0.5A
MCH5811 20 210 15V/1A
MCH5809 30 215 2.5 30V/0.5A
MCh5819 520 4.0
CPH5
CPH5803
20
210
1.8 15V/1A CPH5811 63
CPH5831 63 15V/2A
CPH5809
30
90 2.5
30V/0.5ACPH5819 520 4.0
CPH5805 150
VEC8 VEC2813 20 66 1.8 30V/2A
VEC2816 30 99 4.0
■DC-DC Converter/Load SW
Bipolar Transistors + Schottky Barrier Diodes
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Internal
chip
equivalent
product
Electrical
connection
TR SBD TR SBD
VCEO
[V]
IC
[A]
PC
[W]
VRRM
[V]
IO
[A]
hFE VCE (sat) [V] VF [V] IR [
μ A] trr [ns]
VCE
[V]
IC
[A] min max IC [A]
IB
[mA]
typ max IF
[A] max VR [V] max IF [A]
max
CPH5706
CPH5
30 1.5 0.9 30 0.7 2 0.1 200 560 0.75 15 0.25 0.375 0.7 0.55 10 200 0.1 10
CPH3115
+SBS006
B18
CPH5705 30 3 0.9 15 1 2 0.5 200 560 1.5 30 0.155 0.23 0.5 0.35 6 500 0.1 15
CPH3109
+SBS004
B18
CPH5702 30 3 0.9 30 0.7 2 0.5 200 560 1.5 30 0.12 0.18 0.7 0.55 15 80 0.1 10
CPH3209
+SB07-03C
B22
CPH5703 50 3 0.9 50 0.5 2 0.1 200 560 1 50 0.08 0.12 0.5 0.55 25 50 0.1 10
CPH3205
+SB05-05CP
B22
Bipolar Transistors (PNP)
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Complementary
product
VCEO
[V]
IC
[A]
PC
[W]
hFE VCE (sat) [V]
min max IC
[A]
IB
[mA] typ max
MCH3144
MCPH3
30 2 0.8 *1200 560 1.5 75 0.17 0.26 MCH3244
MCH3109 30 3 0.8 *1200 560 1.5 30 0.155 0.23 MCH3209
MCH3145 50 2 0.8 *1200 560 1 50 0.165 0.33 MCH3245
MCH3105 50 3 0.8 *1200 560 1 50 0.1 0.2 MCH3205
*1: When mounted on ceramic substrate (600mm2×0.8mm)
Bipolar Transistors (NPN)
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Complementary
product
VCEO
[V]
IC
[A]
PC
[W]
hFE VCE (sat) [V]
min max IC
[A]
IB
[mA] typ max
MCH3244
MCPH3
30 2 0.8 *1200 560 1.5 75 0.16 0.24 MCH3144
MCH3221 *230 3 0.8 *1250 400 1.5 30 0.08 0.12 -
MCH3245 50 2 0.8 *1200 560 1 50 0.13 0.26 MCH3145
MCH3222 *250 3 0.8 *1250 400 1 50 0.06 0.09 -
*1: When mounted on ceramic substrate (600mm2×0.8mm) *2: MBIT III series (New Product)
B18 B22
Co
EB
Ca
A
Co
BE
Ca
A
[Bipolar Transistor Use Example]
Step down chopper
VOUT VIN
Step up chopper
VOUT VIN

8
Devices for Mobile Equipment
9
(2) Load SW
Recommended MOSFETs
VDSS MCPH6 CPH6 VEC8 EMH8 Application Sample: Pch + Nch
20V MCH6628 CPH6605 - EMH2603
30V MCH6614 CPH6615 VEC2612 EMH2602
Power MOSFETs (Pch + Nch)
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Electrical
connection
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
RDS (on) [Ω]Ciss
[pF]
Qg
[nC]
VGS=10V VGS=4(4.5)V
typ max typ max
●MCH6627
MCPH6
Pch 30 20 1 0.8 0.42 0.55 0.72 1 75 2.6 M11
Nch 30 20 1.4 0.8 0.23 0.3 0.4 0.56 65 2.5
●MCH6644 Pch 30 20 1.2 0.8 0.32 0.42 0.59 0.83 104 3.3 M11
Nch 30 20 1.8 0.8 0.16 0.21 0.3 0.42 95 3.2
●MCH6628 Pch 20 10 1 0.8 0.38 0.5 0.54 0.76 115 1.5 M11
Nch 30 10 0.35 0.8 2.9 3.7 3.7 5.2 7 1.58
MCH6613 Pch 30 10 0.2 0.8 8 10.4 11 15.4 7.5 1.43 M11
Nch 30 10 0.35 0.8 2.9 3.7 3.7 5.2 7 1.58
MCH6614 Pch 30 10 0.4 0.8 2.4 3.1 3.5 4.9 28 2 M11
Nch 30 10 0.35 0.8 2.9 3.7 3.7 5.2 7 1.58
MCH6615 Pch 30 10 0.4 0.8 2.4 3.1 3.5 4.9 28 2 M11
Nch 30 10 0.65 0.8 0.9 1.2 1.2 1.7 30 2.34
MCH6634 Pch 30 10 0.4 0.8 1.5 1.9 2 2.8 40 0.83 M11
Nch 30 10 0.7 0.8 0.7 0.9 0.8 1.15 30 1
●CPH6614
CPH6
Pch 30 20 1.2 0.8 0.32 0.42 0.59 0.83 104 3.3 M12
Nch 30 20 1.8 0.8 0.15 0.195 0.29 0.41 95 3.2
●CPH6615 Pch 30 20 1.8 0.9 0.18 0.235 0.32 0.45 226 5.5 M12
Nch 30 20 2.5 0.9 0.079 0.105 0.15 0.21 187 5.2
CPH6605 Pch 20 10 1.5 0.8 0.18 0.235 0.24 0.34 40 3.2 M07
Nch 30 10 0.65 0.8 0.9 1.2 1.2 1.7 30 2.34
CPH6610 Pch 30 9 0.4 0.8 1.4 1.8 2 2.8 40 0.83 M07
Nch 30 20 1.4 0.8 0.245 0.32 0.415 0.58 65 2.5
●VEC2602
VEC8
Pch 30 20 3 0.9 0.065 0.086 0.117 0.168 510 11 M13
Nch 30 20 4 0.9 0.037 0.048 0.07 0.099 370 8.5
●VEC2612 Pch 30 20 3 0.9 0.073 0.095 0.115 0.161 180 4.9 M13
Nch 30 20 3 0.9 0.065 0.086 0.117 0.168 510 11
●EMH2602
EMH8
Pch 30 20 2 1 0.053 0.069 0.105 0.15 280 6.4 M13
Nch 30 20 3.5 1 0.115 0.15 0.215 0.31 285 6.7
●EMH2603 Pch 20 10 2 1.1 0.165 0.235 0.26 0.52 420 5 M30
Nch 30 10 0.15 0.6 3.7 5.2 6.4 12.8 7 2
SCH2602 SCH6 Pch 12 10 1.5 0.6 - - 0.235 0.31 160 2.6 M26
Nch 30 10 0.35 0.6 - - 2.9 3.7 7 1.58
M07 M11 M12 M13 M26 M30
DSD
GG
S
D1 G2 S2
S1 G1 D2
DSD
GG
S
D1 D1 D2
S1 G1
D2
S2 G2
D1 D1 G1/D2
S1 G2 S2 G1SG2
D1D2
■LCD-Backlight
[Power MOSFET Use Example]
Push-Pull
N2
N1
Controller
CCFL CCFL
N1
P1
Controller
CCFL
Half-Bridge
CCFL
N2N1
P2P1
Controller Controller
CCFL CCFL
Full-Bridge
Power MOSFETs
Type No. Package Polarity VDSS
[V]
RDS (on) max [mΩ]
(VGS=4V)
VIN
[V]
Set size
[inch] Use example
VEC2402 VEC8 Nch+Nch 30 99
5 to 12 Small Screen
2.5 to 8
Push-PullECH8606 ECH8 Nch+Nch 30 75
ECH8402 Nch 30 32
VEC2602
VEC8
Pch 30 168
Half-Bridge
Full-Bridge
Nch 30 99
VEC2612 Pch 30 168
Nch 30 161
ECH8609
ECH8
Pch 30 120
Nch 30 75
ECH8402 Nch 30 32
ECH8302 Pch 30 48
Bipolar Transistors
Type No. Package Polarity
VCES
(*VCBO)
[V]
IC
[A]
VIN
[V]
Set size
[inch] Use example
CPH5503 CPH5 NPN+NPN 40* 3 5 to 12 Small Screen
2.5 to 8 Self-Excitation Type
CPH5504 NPN+NPN 80 3
[Bipolar Transistor Use Example]
Self-Excitation Type
VIN
CCFL
Q2
Q1
●: New products

10
Devices for Mobile Equipment
11
■Flash Unit
[Use Example]
FRD
Trans
Trigger
transformer
CM
300V
Xe-tube
IGBT
Battery
S/W element
IGBT
DRIVER
Control IC
Bipolar Transistors (NPN)
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VCEO
[V]
IC
[A]
PC
[W]
hFE VCE (sat) [V]
min max IC
[A]
IB
[mA] typ max
CPH3223 CPH NPN 50 3 0.9 200 560 1 50 0.09 0.13
CPH3236 NPN 50 3 0.9 250 400 1 50 0.06 0.1
MOSFETs (Nch)
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
RDS (on) [Ω]Ciss
[pF]
Qg
[nC]
VGS=10V VGS=4V VGS=2.5V
typ max typ max typ max
●MCH6422
MCPH6
Nch 60 10 2 1.5 - - 0.17 0.22 0.19 0.27 325 4.2
MCH6424 Nch 60 10 3 1.5 - - 0.085 0.115 0.095 0.135 690 8.2
●MCH6423 Nch 60 20 2 1.5 0.17 0.22 0.21 0.3 - - 220 6.4
Bipolar Transistors (NPN) + MOSFETs (Nch)
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
TR MOSFET TR MOSFET
VCEO
[V]
IC
[A]
PC
[W]
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
hFE Cob
typ
[pF]
VCE (sat) [V] RDS (on) [
Ω ]
Ciss
typ
[pF]
Qg
typ
[nC]
min max IC
[A]
IB
[mA]
typ max VGS=4V
VGS=2.5V
typ max typ max
VEC2901 VEC8 50 5 1.1 30 10 0.15 0.25 250 400 26 1.6 53 0.055 0.11 2.9 3.7 3.7 5.2 7 1.58
IGBT Drivers
Type No. Package VDD
[V]
VIN / VOUT
[V]
PD
[W]
VIH
min
[V]
VIL
max
[V]
IO+/IO-typ [mA]
VDD=5V VDD=2.5V
CL [pF] CL [pF]
TND721MH5 MCPH5 -0.3 to 7.5 -0.3 to VDD+0.3 0.8 2 1 5000 50 5000 10
Flash Circuit IGBTs
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VCES
[V]
VGES
(DC)
[V]
ICP
[A]
VGE(off) [V] VCE (sat) [V] Cies
VCE
[V]
IC
[mA]
min max IC
[A]
VGE
[V] min max VCE [V]
f
[MHz]
typ
[pF]
●TIG030TS TSSOP8 Nch 400 ±6 150 10 1 0.5 1.2 150 4 3.7 5.4 10 1 2610
●TIG032TS Nch 400 ±6 180 10 1 0.4 1 150 2.5 3.4 4.8 10 1 5100
FRD
Type No. Package VR
[V]
IO
[mA]
VF
IF=0.1A
[V]
IR
VR=400V
[μA]
trr max
IF=IR=100mA, See specified test circuit
[ns]
RE0208DA SOD-323 800 200 4.0 3 55
■Condenser Microphone
[High-Frequency Devices Use Example]
VCC
G
SD
VOUT
The electric capacity changes
Electric signal output
Impedance transformation
Sound
diaphragm
Back plate
Mobile phone
Hands-free
Digital camera
Digital video camera
Portable games
other
High-Frequency Devices for Condenser Microphone
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VGDS
VGDO
[V]
ID
[mA]
PD
[mW]
IDSS
[mA]
|yfs|
typ(*min)
[mS]
Ciss
typ
[pF]
Crss
typ
[pF]
GV
typ
[dB]
VNO
max
[dB]
min max
TF246 USFP 20 1 30 0.14 0.35 1.0 3.5 0.65 -3.0 -110
TF252 20 1 30 0.14 0.35 1.4 3.1 0.95 1.0 -102
TF202C TSSFP 20 1 100 0.14 0.35 1.0 3.5 0.65 -3.0 -110
TF222B 20 1 100 0.14 0.35 1.4 5.0 1.1 -2.0 -102
TF218THC
VTFP
20 1 100 0.14 0.35 1.0 3.5 0.65 -3.0 -110
TF208TH 20 1 100 0.14 0.35 1.4 5.0 1.1 -2.0 -102
TF252TH 20 1 100 0.14 0.35 1.4 3.1 0.95 1.0 -102
Type No. Package
(unit: mm)
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VIN
[V]
VDD
[V]
PD
[mW]
VDD [V] Ci
typ
[pF]
IDD [μA] GV
[dB]
VNO
[dB]
min max min max
EC4K11KF ECSP1410 (1.4×1.0×0.4) ±0.5 4 100 2 3.6 2.7 140 100 12 -90
EC4K14MF ECSP1410 (1.4×1.0×0.32) ±0.5 4 100 2 3.6 2.7 140 200 12 -90
●: New products
●: New products
■USB (3.3V) Signal Line Protection Devices
Recommended Device
Type No. Package
VR [V] VF [V]
IF=1mA
IL [μA]
VR=2.5V
CT [pF]
f=1MHz/
VR=0V
typ
IR=1μA
min
IR=1mA
max
VS002E4 ECSP1608-4 3.4 4.0 0.35 1 16
[Use Example]
Shorted for use
Vbus
D–
D+
USB
Controller
Noise clamping of USB eye patterns
–D
+D
Abnormal signals of 4.0V or more
eliminated (overshoot eliminated)
Abnormal signals of 0.35V or more
eliminated (undershoot eliminated)

12
Devices for Mobile Equipment
13
■Devices for Motor
[MOSFETs Use Example]
Single-phase Motor ( H-Bridge, Half pre. ): #5 Single-phase Motor (H-Bridge): #6 Three-phase Motor: #7
M
Q1
Q2 Q4
Q3
Q6
Q5
Q1
Q2 Q4
Q3
Q1 Q2
LB11660V
Motor Driver
M M
MOSFETs (Pch+Nch)
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Use
example
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
RDS (on) [Ω]Ciss
[pF]
Qg
[nC]
VGS=10V VGS=4(4.5)V
typ max typ max
VEC2602 VEC8 Pch 30 20 3 0.9 0.065 0.086 0.117 0.168 510 11 #6
Nch 30 20 4 0.9 0.037 0.048 0.07 0.099 370 8.5
ECH8609 ECH8 Pch 30 20 4 1.3 0.05 0.067 0.087 0.12 550 2.2
#6, #7
Nch 30 20 6 1.3 0.025 0.034 0.052 0.075 510 11
FW340
SOP8
Pch 30 20 5 1.8 0.041 0.053 0.07 0.098 1000 16.5
Nch 30 20 5 1.8 0.037 0.048 0.064 0.09 460 8.6
FW377 Pch 35 20 5 1.8 0.037 0.049 0.062 0.087 1224 24
Nch 35 20 6 1.8 0.025 0.033 0.043 0.061 1050 20
FW356 Pch 60 20 3.5 2 0.11 0.145 0.15 0.21 990 22 #7
Nch 60 20 5 2 0.043 0.058 0.056 0.084 790 16
FW359 Pch 60 20 3 1.8 0.11 0.145 0.145 0.205 990 22 #6
Nch 60 20 3 1.8 0.11 0.145 0.15 0.215 300 7.8
FW360 Pch 100 20 2 1.4 0.24 0.315 0.32 0.45 935 20 #6, #7
Nch 100 20 2 1.4 0.175 0.22 0.22 0.31 530 13
MOSFETs
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Use
example
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
RDS (on) [Ω]Ciss
[pF]
Qg
[nC]
VGS=10(15)V VGS=4(4.5)V
typ max typ max
2SJ646
TP
Pch 30 20 8 15 0.058 0.075 0.097 0.136 510 11 #6, #7
2SJ634 Pch 60 20 8 20 0.105 0.138 0.145 0.205 990 22 #7
2SJ637 Pch 100 20 5 20 0.24 0.312 0.32 0.45 935 20
2SK4067
TP
Nch 30 20 8 10 0.085 0.115 0.155 0.22 260 6 #6, #7
2SK3492 Nch 60 20 8 15 0.115 0.15 0.155 0.22 300 7.8 #7
2SK3617 Nch 100 20 6 15 0.18 0.225 0.225 0.315 530 13
MOSFETs
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Use
example
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
RDS (on) [Ω]Ciss
[pF]
Qg
[nC]
VGS=10(15)V VGS=4(4.5)V
typ max typ max
MCH3410 MCPH3 Nch 30 20 2 0.9 0.115 0.15 0.19 0.27 120 3.6
#5
MCH3421 Nch 100 20 0.8 0.9 0.68 0.89 0.85 1.2 165 4.8
MCH6423 MCPH6 Nch 60 20 2 1.5 0.17 0.22 0.21 0.3 220 6.4
CPH3418
CPH3
Nch 30 20 1.4 0.9 0.23 0.3 0.4 0.56 65 2.5
CPH3424 Nch 60 20 1.8 1 0.17 0.22 0.21 0.3 220 6.4
CPH3427 Nch 100 20 1 1 0.48 0.63 0.58 0.81 240 6.5
VEC2402 VEC8 Nch+Nch 30 20 4 0.9 0.037 0.048 0.07 0.099 370 8.5
CPH6616 CPH6 Nch+Nch 30 20 2.5 0.9 0.079 0.105 0.15 0.21 187 5.2
Devices for Fan Motor
Bipolar Transistors
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Complementary
product
VCEO
[V]
IC
[A]
PC
[W]
hFE VCE (sat) [V]
min max IC
[A]
IB
[mA] typ max
●2SA2124
PCP
PNP 30 2 1.3 *2200 560 1.5 75 0.2 0.4 2SC6044
2SA2012 PNP 30 5 1.3 *3200 560 1.5 30 0.14 0.21 2SC5565
●2SA2125 PNP 50 3 1.3 *3200 560 1 50 0.125 0.23 2SC5964
2SA2013 PNP 50 4 1.3 *3200 560 1 50 0.105 0.18 2SC5566
2SA1416 PNP 100 1 1.3 *3100 400 0.4 40 0.2 0.6 2SC3646
2SA1417 PNP 100 2 1.5 *3100 400 1 100 0.22 0.6 2SC3647
●2SA2126
TP
PNP 50 3 15 *1200 560 1 50 0.135 0.27 -
2SA2039 PNP 50 5 15 *1200 560 1 50 0.115 0.195 2SC5706
2SA2040 PNP 50 8 15 *1200 560 3.5 175 0.23 0.39 2SC5707
●2SA2169 PNP 50 10 20 *1200 560 5 250 0.29 0.58 2SC6017
2SA1592 PNP 100 1 10 *1100 400 0.4 40 0.2 0.6 2SC4134
2SA1593 PNP 100 2 15 *1100 400 1 100 0.22 0.6 2SC4135
2SA1552 PNP 160 1.5 1 100 400 0.5 50 0.2 0.5 2SC4027
●2SC6044
PNP
NPN 30 2 1.3 *2200 560 1.5 75 0.17 0.26 2SA2124
2SC5565 NPN 30 5 1.3 *3200 560 1.5 30 0.125 0.19 2SA2012
●2SC5964 NPN 50 3 1.3 *3200 560 1 50 0.1 0.15 2SA2125
2SC5566 NPN 50 4 1.3 *3200 560 1 50 0.085 0.13 2SA2013
2SC3646 NPN 100 1 1.3 *3100 400 0.4 40 0.1 0.4 2SA1416
2SC3647 NPN 100 2 1.5 *3100 400 1 100 0.13 0.4 2SA1417
2SC5706
TP
NPN 50 5 15 *1200 560 1 50 0.09 0.135 2SA2039
2SC5707 NPN 50 8 15 *1200 560 3.5 175 0.16 0.24 2SA2040
●2SC6017 NPN 50 10 20 *1200 700 5 250 0.18 0.36 2SA2169
2SC4134 NPN 100 1 10 *1100 400 0.4 40 0.1 0.4 2SA1592
2SC4135 NPN 100 2 15 *1100 400 1 100 0.13 0.4 2SA1593
2SC4027 NPN 160 1.5 1 100 400 0.5 50 0.13 0.45 2SA1552
*1: Tc=25˚C *2: When mounted on ceramic substrate (450mm2×0.8mm) *3: When mounted on ceramic substrate (250mm2×0.8mm)
[Bipolar Transistor Use Example]
VCC
VIN
Hall element GND
GND
H
• For the purpose of power consumption reduction,
low saturated voltage transistor is recommended.
• PCP and TP packages with good radiation are
recommended.
• Composite type (B-E bias resistor, and C-E diode
are embedded) is recommended for miniaturization
purpose.
Bipolar Transistors: Built-in Damper Diode
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VCEO
[V]
IC
[A]
PC
[W]
hFE VCE (sat) [V] VF
IF=0.5A
[V]
RBE
(kΩ)
min IC
[A]
IB
[mA] typ max
2SB1397
PNP
PNP 20 2 1.3 *370 1 50 0.25 0.5 1.5 1.6
2SB1325 PNP 20 4 1.5 *370 3 150 0.25 0.5 1.5 1.5
2SB1324 PNP 30 3 1.5 *370 2 100 0.25 0.6 1.5 0.8
●2SB1739 TP PNP 30 3 1.5 *370 2 100 0.28 0.6 1.5 0.8
2SD2100
PNP
NPN 20 2 1.3 *370 1 50 0.25 0.5 1.5 1.6
2SD1999 NPN 20 4 1.5 *370 3 150 0.25 0.5 1.5 1.5
2SD1998 NPN 30 3 1.5 *370 2 100 0.2 0.5 1.5 0.8
●2SD2720 TP NPN 30 3 1.5 *370 2 100 0.23 0.5 1.5 0.8
*1: Tc=25˚C *2: When mounted on ceramic substrate (450mm2×0.8mm) *3: When mounted on ceramic substrate (250mm2×0.8mm)
●: New products
●: New products

14
Devices for SW Power Supply
15
■
Switching Power Supply Types & Recommended Power MOSFETs Map
■Application Example
ACIN
PFC
Control
PFC FRD
PFC
MOSFET
(1) Flyback
For low-output use (up to 150W)
few externally-conneted parts required
1 MOSFET is used for switching
(2) Forward
Usable for middle-large ouput (100 to 300W)
Several switching MOSFETs can be used in parallel
Several switching MOSFETs can be used
(3) Half-Bridge
For middle output (<150 to 400W)
MOSFET with a lower voltage than flyback or
Forward voltage can be used
2 switching MOSFETs are used
(4) Full-Bridge
For high output (>300 to 400W)
MOSFET with a lower voltage than flyback or
forward voltage can be used
4 switching MOSFETs are used
Main SW
MOSFET
Main SW
MOSFET
Pulse IN
DC
Output
VCC
SBD/FRD
SBD/FRD
Main SW
MOSFET
DC
Output
VCC SBD
Main Control
Main SW
MOSFET
DC
Output
VCC
SBD
SBD
Main Control
(3) Half-Bridge Circuit
(1) Flyback Circuit
(2) Forward Circuit
Main SW
MOSFET
DC
Output
VCC
SBD
SBD
(4) Full-Bridge Circuit
■Switching Devices
(1) Power MOSFET/SBD/FRD for Adapter
Recommended Devices
Set Spec PFC Main SW Rectifier
Applications/Power VOUT
[V]
IOUT
[A] MOSFET MOSFET SBD
Game machine
50W
5 2.0 to 4.0 -2SK4086LS
(600V/0.58Ω)
SBT80-04J
12 1.0 to 2.0 SBT100-16JS
Notebook PC
65W 20 2.0 to 4.0 - 2SK4087LS (600V/0.47Ω)SBT100-16JS
General-purpose
75 to 90W
5 2.0 to 4.0 2SK4085LS
500V/0.33Ω
2SK4087LS
(600V/0.47Ω)
SBT80-04J
12 3.0 to 5.0 SBT150-10JS
24 SBT100-16JS
(2) Power MOSFET/SBD/FRD for other power supply
Recommended Devices [Other sets]
Set Specification PFC Main SW Rectifier
Set Specification Power
[W] FRD MOSFET MOSFET SBD
Printer Domestic (Japan) 50 - - 2SK4096LS SBT150-10JS
W/W 50 - - 2SK4098LS SBT150-10JS
BL DVD recorder Domestic (Japan) 100 ❈ RD0506LS 2SK4097LS 2SK4087LS SBT100-16JS
DVD recorder Domestic (Japan) 60 - - 2SK4097LS SBT80-06J
Desktop PC W/W >200 ❈ RD1006LS 2SK4085LS 2SK4125 SBT350-04J
PDP TV W/W >300 ❈ RD1006LS 2SK4124 2SK4124 SBT100-16JS
Main SW
MOSFET
FRD
ACIN
PFC
Control
PFC
MOSFET
[MOSFET/FRD/SBD Use Example]
DC
Output
SBD
SBD
❈: Development
6
8
14
20
Drain Current/ID[A]
Output Power/POUT[W]
Forward (1 or 2 used)
VDSS: 600 to 800V
Half-bridge (2 used)
VDSS: 450 to 500V
Full-bridge (4 used)
VDSS: 450 to 500V
30 50 100 150 200 250 300 350 400 450 500
Flyback
RCC or PWM
VDSS: 600 to 800V
Universal AC Input
When output becomes large, a high VDSS
is required for the device
ex) Flyback Circuit
Output 80W → VDSS≥600V
Output 120W → VDSS≥700V

16
Devices for SW Power Supply
17
(3) Bipolar Transistors for Adapter
Bipolar Transistors [VCBO=700V/800V Series (AC Adapter)]
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Input
Voltage
[V]
AC Adapter
Circuits
[W]
VCBO
[V]
VCEO
[V]
IC
[A]
hFE VCE (sat) [V]
IC
[A] min max IC [mA]
IB
[mA] max
2SC5823 TP 700 400 1.5 0.1 20 50 700 140 0.8 100/220 3/6
2SC5808 TP 700 400 2.5 0.3 20 50 1200 240 0.8 100/220 4/8
❈TT2240NMP NMP 700 400 1.0 0.1 15 30 500 100 0.8 100/220 1.5/3
2SC6065-V NMP 700 400 1.5 0.1 20 50 700 140 0.8 100/220 3/6
2SC6083 SPA 700 350 1.0 0.1 100 200 500 100 0.8 100 1.5
2SC6083A SPA 700 400 1.0 0.1 50 100 500 100 0.8 100/220 1.5/3
❈2SC6146 SPA 800 350 1.0 0.1 100 200 500 100 0.8 220 3
CPH3249 CPH3 700 350 1.0 0.1 100 200 500 100 0.8 100/220 1.5/3
CPH3249A CPH3 700 400 1.0 0.1 50 100 500 100 0.8 100/220 1.5/3
[Bipolar Transistor Use Example]
Control IC
Output
+5.6 to 5.8V/600 to 700mA
-
RBE
Starting
resistor
Main
S/W Tr
AC Input
Thermistor
❈: Development
◆Lineup
Set Spec PFC SPS for
AV Processor
SPS for
BL Inverter 2nd Rectifier
Panel Size
[inch]
POUT
[W]
VOUT
[V] FRD(1) MOSFET(1) MOSFET(2) MOSFET(3) SBD(1) SBD(2)/FRD(2)
up to 21 70 5/12 - -
2SK4086LS
(also used for
BL power supply)
-
SBT80-06J(1)
SBT100-16JS(1)
26 to 32 150 5 to 12
24 ❈RD1006LS 2SK4085LS 2SK4098LS 2SK4096LS×2 SBT100-16JS(1)
SBT100-16JS(2)
37 to 42 250 5 to 12
24 ❈RD0506LS 2SK4124×2 2SK4098LS 2SK4097LS×2 SBT100-16JS(1)
SBT150-10JS(2)
at least 42 350 5 to 12
24/60 ❈RD1006LS 2SK4124×3 2SK4101LS 2SK4084LS×2
SBT100-16JS(2)
SBT150-10JS(1)
RD2004LS(2)
[Power supply block]
• Circuit
For under 21inch, used for both AV processor (main power supply) and BL inverter power supply.
For larger than 26inch, 2-power supply system is usually used (one is for BL inverter use, and the other is for AV processor use).
• Secondary-side diode voltage
In case of flyback circuit, diode voltage should be 100V and above for 12V output (when PFC output is 380V).
In case of half-bridge circuit, diode voltage should be 100V and above for 24V output (when PFC output is 380V).
■LCD TV
ACIN
PFC
Control
PFC FRD(1)
PFC Circuit
PFC
MOSFET(1) Main SW
MOSFET(2)
Main SW
MOSFET(2)
Pulse IN
DC
Output
VCC
SBD(2)/FRD(2)
SBD(2)/FRD(2)
Main SW
MOSFET(3)
DC
Output
SBD(1)
Main Control
SBD(1)
Half-Bridge Power Supply
Flyback Power Supply
* For under 21inch, also used for
BL inverter power supply.
❈: Development
Recommended Devices by LCD-TV Panel Size
(1) When BL inverter is half-bridge circuit, and AV output is flyback circuit

18
Devices for SW Power Supply
19
Pulse IN
SBD
SBD
ACIN
PFC
Control
PFC FRD(1)
FRD(2)
FRD(2)
FRD(2)
FRD(2)
Driver
CCFL
CCFL
CCFL
PFC
MOSFET(1)
PFC Circuit
Multi CCFL, Parallel
Flyback Power Supply for AV Processor
PFC Direct input BL Inverter
Main SW
MOSFET(2)
Main Control
DC
Output
Main SW
MOSFET(3)
Main SW
MOSFET(3)
◆Lineup
Set Spec PFC Direct BL Inverter SPS for AV Processor 2nd Rectifier
Panel Size
[inch]
POUT
[W]
VOUT
[V] FRD(1) MOSFET(1) FRD(2) MOSFET(3) MOSFET(2) SBD
26 to 37 200 12 ❈RD1006LS 2SK4085LS ❈RD0506LS 2SK4086LS×2 2SK4098LS SBT100-16JS
37 to 42 250 12 to 18 ❈RD1006LS 2SK4124×2 ❈RD0506LS 2SK4086LS×2 2SK4098LS SBT100-16JS×2
at least 42 350 12 to 18 ❈RD1006LS 2SK4124×3 ❈RD1006LS 2SK4085LS×2 2SK4101LS SBT100-16JS×2
(2) The example when BL inverter adoptes PFC voltage direct input circuit, and AV output adopts flyback circuit
❈: Development
1) Recommended Devices for Bridge Circuit
Push-Pull Type
[Feature]
• Compared with half-bridge type, although doubled voltage is needed, meanwhile RDS(on) can be suppressed due to the use of Nch,
so a good symmetry can be achieved.
Because the current capacity is large, multi tubes driving can be made possible, and the needed parts count can be reduced.
Separately-excitation Package Polarity Type No. Set Size
[inch]
VIN
[V]
N2
N1
Controller
CCFL
VIN
SMP
Nch 2SK3285 (30V/34mΩ)
21 to 32
up to 12
Nch 2Sk3352 (30V/21mΩ)
Nch 2SK3816 (60V/41mΩ)15 to 24
Nch 2SK3818 (60V/18mΩ)
Nch 2SK2592 (250V/200mΩ) at least 60
TO-220ML
TO-220FI
Nch 2SK3703 (60V/28mΩ)
at least 32
15 to 24Nch 2SK3704 (60V/15mΩ)
Nch 2SK2160 (200V/350mΩ)
Nch 2SK2161 (200V/250mΩ)
at least 60Nch 2SK4096 (500V/710mΩ)
Nch 2SK4084 (500V/400mΩ)
N2
N1
Contoller
CCFL CCFL
VEC8
(VECxxxx)
ECH8
(ECH8xxx)
TSSOP8
(FTSxxxx(single))
(FTDxxxx(Dual))
Nch + Nch VEC2402 (30V/99mΩ)
2.5 to 8
5 to 12
Nch + Nch ECH8606 (30V/75mΩ)
Nch ECH8402 (30V/32mΩ)
Nch + Nch FTD8009 (30V/33mΩ)
Nch + Nch ECH8616 (60V/133mΩ) 15 to 24
SOP8
(FSSxxxx(single))
(FWxxxx(Dual))
Nch + Nch FW241 (30V/150mΩ)
15 to 19
5 to 12
Nch + Nch FW261 (30V/83mΩ)
Nch + Nch FW803 (30V/27mΩ)
Nch FSS250 (30V/54mΩ)
Nch FSS804 (30V/20mΩ)
Nch + Nch FW808 (30V/37mΩ)
15 to 24
Nch + Nch FW250 (60V/215mΩ)
Nch + Nch FW256 (60V/84mΩ)
Nch FSS273 (45V/34mΩ)
Nch+Nch FW248 (45V/42mΩ)
Nch FSS275 (60V/62mΩ)
Nch + Nch FW257 (100V/220mΩ)
Nch + Nch FW225 (450V/11.2Ω) at least 120
TP
SMP
Nch SFT1402 (35V/40mΩ)
at least 32
5 to 12
Nch SFT1403 (35V/25mΩ)
Nch 2SK3352 (30V/21mΩ)
Nch SFT1407 (45V/29mΩ)
Nch SFT1405 (45V/74mΩ)
15 to 24
Nch 2SK3615 (60V/85mΩ)
Nch 2SK3816 (60V/41mΩ)
Nch 2SK3818 (60V/18mΩ)
Nch 2SK1920 (250V/700mΩ)
at least 120Nch 2SK3092 (400V/2.3Ω)
Nch 2SK3850 (600V/18.5Ω)
(3) Devices for BL Inverter

20
Devices for SW Power Supply
21
Full-bridge Type, Half-bridge Type
[Feature: Full-bridge/Half-bridge Type]
• Pch/Nch drive
• A large current device can drive multi tubes, thus the needed parts count can be reduced.
[Feature: Half-bridge Type (High voltage input)]
• A highly effiective system can be achived by using a high side driver, whitch can make the inverter cicuit to be operated at a PFC
voltage level.
MOSFET should be Nch type and withstand a high voltage.
Separately-excitation Package Polarity Type No. Set Size
[inch]
VIN
[V]
N2N1
P2P1
Controller Controller
CCFL CCFL
Full-Bridge
SMP
Nch 2SK3815 (60V/55mΩ)
at least 32
12 to 24
Pch 2SJ659 (60V/133mΩ)
Nch 2SK3819 (100V/130mΩ)
at least 60
Pch 2SJ664 (100V/136mΩ)
TO-220ML
TO-220FI
Nch 2SJ3702 (60V/55mΩ)
at least 32
12 to 24
Pch 2SJ650 (60V/135mΩ)
Nch 2SK3706 (100V/130mΩ)
at least 60
Pch 2SJ655 (100V/136mΩ)
Nch 2SK2161 (200V/350mΩ)
Pch 2SJ405 (200V/500mΩ)
N1
P1
Controller
CCFL
Half-Bridge (Nch + Pch) Nch 2SK4096 (500V/710mΩ)
Nch 2SK4084 (500V/400mΩ)
VEC8
(VECxxxx)
ECH8
(ECH8xxx)
Nch + Pch
VEC2602 (30V/99 • 168mΩ)
2.5 to 8
5 to 12
Nch + Pch ECH8609 (30V/75 • 120mΩ)
Nch ECH8402 (30V/32mΩ)
Pch ECH8302 (30V/48mΩ)
Nch + Nch ECH8616 (60V/133mΩ)15 to 24
Pch + Pch ECH8615 (60V/295mΩ)
SOP8
(FSSxxxx(single))
(FWxxxx(Dual))
Nch + Pch FW344 (30V/150•147mΩ)
15 to 19
5 to 12
Nch + Pch FW340 (30V/83•98mΩ)
Nch + Pch FW342 (30V/52•98mΩ)
Nch FSS802 (30V/26mΩ)
Pch FSS163 (30V/31mΩ)
N1
P1
Controller
CCFL
Half-Bridge
CCFL
Nch + Pch FW349 (30V/84•106mΩ)
15 to 24
Nch + Pch FW359 (30V/215•205mΩ)
Nch FSS273 (45V/34mΩ)
Pch FSS145 (45V/40mΩ)
TP
SMP
Nch 2SK3351 (30V/21mΩ)
at least 32
5 to 12
Pch 2SJ646 (30V/154mΩ)
Nch 2SK3285 (30V/34mΩ)
Nch 2SK3352 (30V/21mΩ)
N1
P1
Driver TND5XX
CCFL
Half-Bridge (High +B Voltage) VIN(High)
VIN(Low)
Nch SFT1402 (35V/69mΩ)
15 to 24
Pch SFT1302 (35V/111mΩ)
Nch SFT1405 (45V/74mΩ)
Pch SFT1305 (45V/147mΩ)
Nch 2SK3615 (60V/85mΩ)
Pch 2SJ635 (60V/92mΩ)
Nch 2SK3818 (60V/18mΩ)
Pch 2SJ662 (60V/38mΩ)
Nch 2SK3979 (200V/450mΩ)
at least 120
Pch 2SJ679 (200V/980mΩ)
Nch 2SK1920 (250V/700mΩ)
Pch 2SJ281 (250V/2Ω)
Monitor Size [inch] (Standard)
820 32
[Bipolar Transistor Lineup by Input Voltage and Monitor Size]
Monitor Size [inch] (Standard)
20 32
[Power MOSFET Lineup by Input Voltage and Monitor Size]
2) Recommended Power MOSFETs & Bipolar Transistors by Monitor Size
PCP Package
Type No. VDSS
[V]
ID
[A]
2SK3614 60 4
2SK3944 60 2
2SJ632 60 2
2SK3489 30 8
2SK3490 30 8
2SJ616 30 6
SOP8 Package
Type No. VDSS
[V]
ID
[A]
FW250 60 3
FW359 60 3
FW248 45 6
FW349 45 4
TP Package
Typ e No . VDSS
[V]
ID
[A]
2SK3978 200 4
2SK3977 100 4
SFT1202 180 2
SFT1201 150 2.5
SFT1305 45 10
SFT1307 45 14
SFT1405 45 10
SFT1407 45 14
SFT1403 35 11
SFT1402 35 14
VEC8 Package
Type No. VCES
[V]
IC
[A]
VEC2202 120 2.5
VEC2201 100 3
PCP Package
Type No.
VCES
*VCBO
[V]
IC
[A]
PCP1201 150 2.5
PCP1202 180 2
2SC6095 120 2.5
2SC6096 120 2
2SC3647 120* 2
2SC5991 100 7
2SC5990 100 4
2SC5964 100 3
2SC5994 100 2
TP Package
Type No.
VCES
*VCBO
[V]
IC
[A]
2SC6071 120 10
2SD1816 120* 4
2SD1815 120* 3
2SC6098 120 2.5
2SC6099 120 2
2SC5980 100 8
2SC5979 100 5
2SC5707 80 8
2SC5706 80 5
2SC6022 40* 9
2SC6020 40* 6
CPH3 Package
Type No. VCES
[V]
IC
[A]
CPH3252 180 2
CPH3251 150 2
CPH3247 120 2.5
CPH3239 100 5
CPH3236 100 3
CPH3223 100 3
SMP Package
Type No. VCES
[V]
IC
[A]
2SC5974 700 7
2SC5999 120 25
2SC5915 120 10
Self-excitation Type (collector resonance)
[Feature]
• Multi tubes can be driven by using a power device with large current capacity.
→also, the number of inverter circuits and used parts can be reduced.
• 4 to 8 tubes can be driven by circuit.
• Best choice for low-cost sets.
Self-excitation Package Type No. Set Size
[inch]
VIN
[V]
VIN
CCFL
Q2
Q1
SMP
2SC5915 (120V/10A)
at least 32 15 to 24V
2SC5999 (120V/25A)
TO-220ML
TO-220FI
2SC5888 (80V/10A)
at least 32
up to 15V
2SC6080 (80V/13A) up to 15V
2SC5264 (800V/5A) at least 100V

22
Devices for SW Power Supply
23
ExPDs
Type No. Package Functions VDD max
[V]
PD max
[W]
Operating
voltage range
[V]
Drive capability VIH min
[V]
VIL max
[V]
Source [A] Sink[A]
TND321VD
VEC8
Dual inverter 25 0.2 4.5 to 25 0.8 1 2.6 0.8
TND322VD Dual buffer 25 0.2 4.5 to 25 0.8 1 2.6 0.8
TND323VD Inverter buffer 25 0.2 4.5 to 25 0.8 1 2.6 0.8
TND307TD
TSSOP8
Dual inverter 25 0.25 4.5 to 25 1 1 2.6 0.8
TND308TD Dual buffer 25 0.25 4.5 to 25 1 1 2.6 0.8
TND309TD Inverter buffer 25 0.25 4.5 to 25 1 1 2.6 0.8
TND301S
SOP8
Dual inverter 25 0.3 4.5 to 25 2 2 2.6 0.8
TND302S Dual buffer 25 0.3 4.5 to 25 2 2 2.6 0.8
TND303S Inverter buffer 25 0.3 4.5 to 25 2 2 2.6 0.8
TND304S Dual inverter 25 0.3 4.5 to 25 1 1 2.6 0.8
TND305S Dual buffer 25 0.3 4.5 to 25 1 1 2.6 0.8
TND306S Inverter buffer 25 0.3 4.5 to 25 1 1 2.6 0.8
TND311S Dual inverter 25 0.3 4.5 to 25 2 2 2.6 0.8
TND312S Dual buffer 25 0.3 4.5 to 25 2 2 2.6 0.8
TND313S Inverter buffer 25 0.3 4.5 to 25 2 2 2.6 0.8
TND314S Dual inverter 25 0.3 4.5 to 25 1 1 2.6 0.8
TND315S Dual buffer 25 0.3 4.5 to 25 1 1 2.6 0.8
TND316S Inverter buffer 25 0.3 4.5 to 25 1 1 2.6 0.8
* TND30x series: input terminal Hi Z (high impedance); TND31x/TND32x series: input pull-down resistor in.
(4) Devices for Power MOSFET Buffer
1) Low Side Driver ExPD [MOSFET, IGBT Gate driver IC]
[Application]
• PDP, LCD-backlight, inverter light, liquid crystal projector, HID drive, motor drive, half-bridge/full-bridge power supply, etc.
ExPDs
Type No. Package VS
[V]
IO
Features Applications
Source
[mA]
Sink
[mA]
●TND516SS
SOP8
600 200 400 Single-phase high side driver Ballasts, PDP maintenance drive, DC/AC
motor drive, induction heaters, charging
circuits, high-frequency switching power
supplies, switching amplifiers, and other
general-purpose driver applications
TND507S 600 250 500 Single input/two output half bridge
driver circuits
TND508S 600 250 500
●TND512MD
MFP16
600 200 400 3-phase high side driver 3-phase motor drive applicatioon
TND505MD 600 250 500
Two input/output half bridge driver
circuits.
Built-in shutdown function and
low-side priority circuit.
PDP maintenance drive, DC/AC motor
drive, ballasts, charging circuits,
high-frequency switching power supplies,
induction heaters, switching amplifiers,
and other general-purpose driver
applications
TND506MD 600 250 500
Two input/output half bridge driver
circuits.
Built-in shutdown function.
HIN
LIN
SD
LOUT
HOUT
VS
TND506MD
Control IC
[ExPD Use Example]
Load
MOSFET 2
MOSFET 1
• High withstand voltage driver (600V)
• Under-voltage protection function is built in
L
2) High Voltage Driver ExPD
INA
INB OUTB
OUTA
TND3xx
Control IC
[ExPD Use Example]
Load
(Inverter)
(Buffer)
Load
MOSFET 2
MOSFET 1
• Withstand voltage of 25V is assured.
• 2 low side drivers in
• TTL/CMOS compatible
(VIH=2.6V or less at VDD=4.5 to 25V)
• High-speed switching time
(tr/tf=typ 25ns, at 1000pF load [TND301S])

24
Devices for SW Power Supply
25
3) LCD-Backlight Inverter: ExPD
[TND3xx Use Example: MOSFET Driver]
Half-Bridge MOSFET Full-Bridge MOSFET Push-Pull MOSFET
N1
P1
VDD
GND
TND3xx
CCFL
CCFL
N1
P1
N2
P2
VDD
GND
TND3xx
TND3xx
VDD
GND
CCFL
N1
VDD
GND
TND3xx
N2
[TND3xx Use Example: High-side FET Drive, Various Applications]
12V Power Supply Variation 24V Power Supply Variation
N1
P1
12V
GND
TND3xx
N1
P1
12V
GND
N
GND
TND3xx TND3xx
N1
P1
24V 24V
12V
4) PDP Sustain Driver: ExPD
[TND5xx, TND3xx Use Example]
TND5XX
TND3XX R1
R2
R3
R5
R6
R4
PDP Panel
Vp
Cp
D1
D2
D3
C3
C0 HIN
LIN
SD
VDD
VDD
INB
INA
VH
VL
HFG
LOUT
GND
HOUT
OUTA
OUTB
GND
Control IC
5) Air conditioner fan motor drive: ExPD
[TND512MD Use Example]
1
LB11696V
1
C1
1000μF
C3
10μF
Z3
DZD6.8
C2
104
VM
GND
VCC
234567 8
16
C6
682
C5
682
C4
682
1.1kΩ
470Ω
CTL
RD PWMIN HP
F/R
R21
10kΩ
R23
100kΩ
C8
104
C7
182
R24
20kΩ
C9
4.7μF
J4 J5
R24
20kΩ
T1
C16
104
UOUT
T2
C23
472
T4
C17
104
C10
105 C11
105
C13
105
C12 105
D1 D2
D3
VOUT
T4
C24
472
T5
C18
104
WOUT
T6
C25
472
R8 R7 R9 R10 R11 R12 R4
J6 J7
C19
104
C21
104
R22
100kΩ
15 14 13 12 11 10 9
23456789101112131415
30
2928272625242322212019181716
T1 to T6: 2SK2624
D1 to D3: DFD05TC
TND512MD

26
Devices for SW Power Supply
27
6) Bipolar Transistors: Separately-excited Inverter (MOSFET for Gate Drive)
Bipolar Transistors
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Internal chip
equivalent
product
Electrical
connection
VCEO
[V]
IC
[A]
ICP
[A]
PC
[W]
hFE VCE (sat) [V]
VCE
[V]
IC
[A] min max IC [A]
IB
[mA] typ max
MCH5541 MCPH5 PNP 30 0.7 3 0.5 2 0.01 200 500 0.2 10 0.11 0.22 30A02MH
+30C02MH B14
NPN 30 0.7 3 0.5 2 0.05 300 800 0.2 10 0.085 0.19
MCH6542
MCPH6
PNP 30 0.3 0.9 0.5 2 0.01 200 500 0.1 5 0.11 0.22 30A01M
+30C01M B13
NPN 30 0.3 0.9 0.5 2 0.01 300 800 0.1 5 0.1 0.2
MCH6545 PNP 50 0.5 1 0.5 2 0.01 200 500 0.1 10 0.06 0.12 50A02CH
+50C02CH B13
NPN 50 0.5 1 0.5 2 0.01 300 700 0.1 10 0.05 0.1
CPH5541
CPH5
PNP 30 0.7 3 0.6 2 0.01 200 500 0.2 10 0.11 0.22 30A02CH
+30C02CH B14
NPN 30 0.7 3 0.6 2 0.05 300 800 0.2 10 0.085 0.19
CPH5506 PNP 30 1.5 5 0.9 2 0.1 200 560 0.75 15 0.25 0.375 CPH3115
+CPH3215 B14
NPN 30 1.5 5 0.9 2 0.1 200 560 0.75 15 0.15 0.225
CPH5516 PNP 30 2 6 0.9 2 0.1 200 560 1.5 75 0.17 0.26 CPH3144
+CPH3244 B14
NPN 30 2 6 0.9 2 0.1 200 560 1.5 75 0.16 0.24
CPH5518 PNP 50 1 3 0.9 2 0.1 200 560 0.5 10 0.23 0.38 CPH3116
+CPH3216 B14
NPN 50 1 3 0.9 2 0.1 200 560 0.5 10 0.13 0.19
CPH5524 PNP 50 3 6 0.9 2 0.1 200 560 1 50 0.115 0.23 CPH3123
+CPH3223 B14
NPN 50 3 6 0.9 2 0.1 200 560 1 50 0.09 0.13
B13 B14
C1 B2
E1 B1
E2
C2 B1EC
C1
B2
C2
[Bipolar Transistor Use Example]
Buffer Transistor Circuit
Push-PullFull-Bridge
N1
P1
N2
P2
VDD
GND
GND
CCFL
Buffer TR
Buffer TR
VDD
Buffer TR
Buffer TR
CCFL
N1
N2
VDD
GND
Buffer TR
Buffer TR
Buffer TR
• IC with large IC is recommended for driving large-capacitance MOSFET
• Composite type (PNP+NPN) is recommended for miniaturization purpose
TN8D41A/51A, TN5D41A/51A/61A: Separately-excited step-down switching regulator
[Functions/Features]
• Large current IOmax 8A (TN8D41A/51A)
I
Omax 5A (TN5D41A/51A/61A)
• High efficiency Vertical-type P-channel power MOSFET built-in
• High withstand voltage VIN max 57V
• Five external parts
• Built-in reference oscillator (150kHz)
• Built-in current limiter
• Built-in thermal shutdown circuit
• Built-in soft start circuit
• ON/OFF function (shared with soft start pin)
Type No. Type Input voltage Output voltage/current Channels Power stage Package
TN5D41A Step-down 10V to 40V 5V/5A 1ch Built-in (PMOS) TO-220FI5H-HB
TN8D41A Step-down 10V to 40V 5V/8A 1ch Built-in (PMOS) TO-220FI5H-HB
TN5D51A Step-down 20V to 48V 12V/5A 1ch Built-in (PMOS) TO-220FI5H-HB
TN8D51A Step-down 20V to 48V 12V/8A 1ch Built-in (PMOS) TO-220FI5H-HB
TN5D61A Step-down 30V to 48V 24V/5A 1ch Built-in (PMOS) TO-220FI5H-HB
■DC-DC Converter IC
[ExPD Use Example]
+
GND
VOUT
+
VIN
GND
VIN
SS
GND
SWOUT
FB
Under Voltage
Protect
SOFTSTART
Band Gap
OSC
AMP
COMP
OUTPUT
Over
Temperature
Protect
Over Current
Protect
SENSE
Pch MOSFET
--
+
--
+
1
5
2
3
4
[Application Example for Power Supply Makers: Allows High Design Freedom]
24V Output
ACIN
PFC
Control
5/3.3V
Output
24V Output
ACIN
PFC
Control
5/3.3V
Output
TN5D/8D
Series
5to8AOutput
[Proposal]
1. Simplification of circuits
2. Common-ization of circuits
3. Helps reduce designing time
[Proposal]
1. Simplification of circuits
2. Common-ization of circuits
3. Helps reduce designing time

28
Devices for Lighting
29
■Inverter light
Bipolar Transistors
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Merit
Set
power
[W]
VCBO
[V]
VCEO
[V]
IC
[A]
hFE
1 hFE 2
VCE
[V]
IC
[A] min max VCE [V]
IC
[A]
TT2264
SPA
NPN 700 400 0.3 5 0.03 50 100 5 0.15 at least 10 hFE of low current side is high up to 20
2SC6083A NPN 700 400 1 5 0.1 50 100 5 0.5 at least 10
hFE of low current side
is high, package is small 20 to 60
TT2240NMP NMP NPN 700 400 1 1 0.1 15 30 5 0.5 at least 10 Package is small 20 to 60
TT2188
TO-220
NPN 500 400 5 5 0.5 20 50 5 3
at least 10 tf=0.3μs 20 to 60
TT2146 NPN 500 400 8 5 0.8 20 50 5 4
at least 10 tf=0.3μs65 to 130
TT2196 NPN 500 400 12 5 1.2 20 50 5 6
at least 10 tf=0.3μs
MOSFETs
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
RDS (on) [Ω]Ciss
[pF]
Qg
[nC]
VGS=10(15)V VGS=4(4.5)V
typ max typ max
2SJ281
PCP
Pch 250 30 3 30 1.5 2 - - 420 -
●2SK3979 Nch 200 30 6 20 0.32 0.45 - - 1090 18.2
2SK1920 Nch 250 30 4 30 0.5 0.7 - - 420 -
Q1
NPN
[Bipolar Transistor Use Example: Ball Lamp]
+
OUT1
R2
C1
OUT2
OUT3
OUT4
H
N
R
C5
L1
Inductor
DB1
DB C2
R
R
C
Q2
NPN
Q2
[MOSFET Use Example: Ball Lamp]
+
OUT1
C4
R4
C2
Q1
OUT2
OUT3
OUT4
H
N
C1
C7
ZD1 ZD2
C3R3 R2
C6
NTC1
NTC2
PTC1
T1
L2
C5
DB1
NFR1
●: New products
Recommended Devices and Spec: Surface Mount Type
Recommended devices by inverter lighting set [AC=200V input]
Set output
(Fluorescent tube) [W] PFC circuit Inverter circuit Remarks
32×2 2SK4136×2
2SK4181×2
2SK4136×2
2SK4181×2
525V device is recommended when a
larger margin is needed.
[ZP Package]
wgood surface radiation due to thin body
PD up better radiation than that of
SMP package. 10% PD up.
40×2 2SK4137×2
2SK4182×2
2SK4136×2
2SK4181×2
86×2 2SK4138×2
2SK4183×2
2SK4138×2
2SK4183×2
6.2
7.8
8.2
0.2
0.4
4.2
1.0 1. 0
5.08
2.54
2.54
8.4
10.0
1.2
0.3
0.6
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
12
3
MOSFETs
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VDSS
[V]
VGSS
[V]
ID
[A]
PD
Tc=25˚C
[W]
RDS (on) [Ω]Ciss
[pF]
VGS=10(15)V
typ max
●2SK4136
ZP
500 30 8 70 0.65 0.85 600
●2SK4137 500 30 9.5 80 0.5 0.65 750
●2SK4138 500 30 14 100 0.4 0.52 1000
●2SK4181 525 30 7.5 70 0.71 0.92 600
●2SK4182 525 30 9 80 0.58 0.75 750
●2SK4183 525 30 13 100 0.45 0.58 1000
Recommended Devices and Spec: Lead Type
Recommended devices by inverter lighting set [AC=200V input]
Set output
(Fluorescent tube) [W] PFC circuit Inverter circuit Remarks
40×2 2SK4186LS 2SK4198LS×2 [TO-220FI(LS) Package]
86×2 2SK4186LS×2 2SK4199LS×2
86×3 2SK4187LS×2 2SK4187LS×2
MOSFETs
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VDSS
[V]
VGSS
[V]
ID
IDc*
[A]
PD
Tc=25˚C
[W]
RDS (on) [Ω]Ciss
[pF]
Qg
[nC]
VGS=10(15)V
typ max
●2SK4098LS
TO-220FI(LS)
600 30 7 33 0.9 1.1 660 -
●2SK4099LS 600 30 8.5 35 0.72 0.94 815 -
●2SK4086LS 600 30 11.5* 37 0.58 0.75 1000 38.2
●2SK4087LS 600 30 14* 40 0.47 0.61 1200 46
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2. 55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
123
10.0
3.2
●: New products
[MOSFET Use Example]
V1
AC +
+
Q2
Light
Light
C4C1
Q4
Q3
Control IC
L2
C2
D3
D4
C3
L1
D2
for PFC circuit
for Inverter circuit use
(2 devices are used)
TND506
to
TND509
RD1006LS(600V/10A)
●: New products

30
Devices for Lighting
31
Devices for Modem and Infrared Sensor
[MOSFET Use Example]
GND
VCC Reset
DISC OUT
Thre
Trig
GND
VL=15V
HFG
HOUT
LOUT
VH
VL
SD
IN
GND
TND507S
TND508S
LB8555
Timer IC
FRD
MOSFETs
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VDSS
[V]
VGSS
[V]
ID
[A]
PD
Tc=25˚C
[W]
RDS (on) [Ω]Ciss
[pF]
Qg
[nC]
VGS=10(15)V
typ max
●2SK4136 ZP 500 30 8 70 0.65 0.85 600 -
●2SK2617ALS
TO-220FI(LS)
500 30 5 25 1.2 1.6 550 15
●2SK2618ALS 500 30 6.5 30 0.95 1.25 700 20
●2SK2625ALS 600 30 5 30 1.5 2 700 20
●2SK4098LS 600 30 7 33 0.9 1.1 660 -
■Emergency Lamp
■HID Lamp
[2SK4043LS Use Example]
T1
FUSE
AC
+
+
FUSE
Battery
Lamp
Q1
D9
RS
Q2
C1 Control IC
MOSFETs
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VDSS
[V]
VGSS
[V]
ID
[A]
PD
Tc= 25 ˚C
[W]
RDS (on) [Ω]Ciss
[pF]
Qg
[nC]
VGS=2.5V VGS=4V
typ max typ max
●2SK4043LS TO-220FI(LS) 30 10 20 20 0.016 0.021 0.017 0.024 3000 37
●: New products
●: New products
■Devices for Modem
Transistors for Modem Circuit
Type No. Package Polarity
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
VCEO
[V]
IC
[A]
PC
[W]
hFE fT
typ
[MHz]
VCE (sat) [V]
min max IC
[mA]
IB
[mA] max
2SA1740 PCP PNP 400 0.2 1.3 60 200 70 50 5 0.8
2SA1699 NP PNP 400 0.2 0.6 60 200 70 50 5 0.8
2SA1785 NMP PNP 400 1 1 40 200 50 200 20 1
●CPH3249A CPH NPN 400 1 0.6 50 100 20 10 100 0.8
2SC4548 PCP NPN 400 0.2 1.3 60 200 70 50 5 0.6
2SC4002 NP NPN 400 0.2 0.5 60 200 70 50 5 0.6
SOP8501 SOP8 PNP 400 1 1.3 40 200 70 0.2 20 1
NPN 400 0.2 1.3 60 200 70 0.05 5 0.6
*1: When mounted on ceramic substrate (250mm2×0.8mm)
■Devices for infrared sensor
Junction FET
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Typical Applications
VDSX
[V]
VGDS
VGDO
[V]
ID
[mA]
PD
[mW]
IDSS
[mA]
|yfs|
typ
[mS]
Ciss
typ
[pF]
Crss
typ
[pF]
min max
●EC3A04B ECSP1006-3B 30 30 10 100 0.6 3 5 4 1.1
humanbody detection, temp.
detection, automatic switching, etc.
[Junction FET Use Example]
Output
Amplifier Comparator
Sensor
+
-
-
+
1
2
3
-
+R
Optical lens
Thermal energy
Signal
(Infrared rays etc.) D
S
G
High-voltage
TR
TIP
RING
[High-Voltage Transistor Use Example for MODEM Circuit]
Modular Jack
High-voltage TR
High-voltage TR
Safety
&
Protection
Modem
Controller
●: New products
●: New products

32
Devices for Satellite/GPS
33
FM Transmitter
■Satellite LNB
[Satellite LNB]
IF OUT
Lo
IF Amp.LNA.
RF IN
MIX
LO
Frequency: 9 to 14GHz
■GPS/XM Antenna Module
[GPS/XM Antenna Module]
Frequency: 1.57 to 2.3GHz
IF
OUT
Lo
IF Amp.MIX
LO
LNA.
ESD
RF IN
LNA.
ANTENNA
MODULE
NAVIGATION
SECTION
Ultrahigh-Frequency Transistors
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Block
VCEO
[V]
IC
[mA]
PC
[mW]
fT
typ
[GHz]
NF |S21e|2
f
[GHz]
typ
[dB]
f
[GHz]
VCE
[V]
IC
[mA]
typ
[dB]
MCH4009
MCPH4
3.5 40 120 25 2 1.1 2 3 20 17 Lo/IF Amp.
MCH4011 3.5 100 350 24 2 1.1 2 3 50 14.5 Lo/IF Amp.
MCH4012 3.5 200 500 20 2 1.0 2 3 100 12 Lo/IF Amp.
MCH4020 8 150 500 16.5 2 1.2 1 5 50 17.5 Lo/IF Amp.
High-Frequency Schottky Barrier Diodes
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Block
VR
[V]
IF
[mA]
P
[mW]
VF
[mV]
Conversion Loss
[dB]
C
typ [pF]
●SBX201C CP 2 50 - 280 8.6 0.25 Mixer
●: New products
High-Frequency Transistors
Type No. Package
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
Block
VCEO
[V]
IC
[mA]
PC
[mW]
fT
typ
[GHz]
NF |S21e|2
f
[GHz]
typ
[dB]
f
[GHz]
VCE
[V]
IC
[mA]
typ
[dB]
MCH4009
MCPH4
3.5 40 120 25 2 1.1 2 3 20 17 LNA
MCH4011 3.5 100 350 24 2 1.1 2 3 50 14.5 LNA
MCH4012 3.5 200 500 20 2 1.0 2 3 100 12 LNA
MCH4013 3.5 15 120 22.5 2 1.5 2 5 5 16 LNA
EC4H08C ECSP1008 3.5 15 50 24 2 1.5 2 3 10 17 LNA
EC4H09C 3.5 40 120 26 2 1.3 2 3 20 16.5 LNA
■FM Transmitter
Varactor Diode
Type No. Package
Absolute maximum
ratings/Ta=25˚CElectrical characteristics/Ta=25˚C
VR
[V]
C1 C2 ∆Cm [%]
C1.0V/C4.0V
max
VR
[V] min max VR [V] min max
EC2C01C ECSP1008-2 15 1 18.5 21.5 4 3.5 4.5 5.0
SVC710 MCPH3 15 1 18.5 21.5 4 3.5 4.8 4.8
SVC707 SPA 15 1 18.58 21.26 4 3.61 4.73 3.0
VDD
f_Ref
VCO
AS
CLK
DATA
ATT
PON
CONT.
LV2282VA
V_Reg
[Varactor Diode Use Example]
3.3V
VCC=+14.4V (From cigarette Lighter in a car)
RF OUT
3LN02M✕5
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SANYO Semiconductor Co., Ltd.
Ordering number : EP124
This catalog provides information as of June, 2008.
Specifications and information herein are subject to change without notice.
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