Silicon Laboratories Si8281-EVB User manual

UG167: Si8281-EVB User's Guide
This document describes the operation of the Si8281-EVB.
The Si8281 Evaluation Kit contains the following items:
• Si8281-EVB
•Si8281CD-IS installed on the evaluation board.
KEY POINTS
• Discusses hardware overview and setup,
including:
• Si8281 low voltage side connections.
•DC-DC operation.
• Si8281 isolated gate drive connections.
• Offers alternative configurations.
• Demonstrates driver functionality.
• Shows Si8281-EVB schematics and
silkscreen/copper layout.
• Includes the bill of materials and ordering
guide.
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1. Overview and Setup
1.1 Hardware
Si8281-EVB can be used to demonstrate the isolated gate drive capabilities of the installed Si8281CD-IS. The Si8281 includes a DC-
DC converter used to supply isolated power to the gate driver.
Si8281 Low Voltage Side Connections
Supply power to the input side of Si8281 by applying 5.0 VDC to VIN at terminal block J1. LED D4 above terminal block J1 illuminates to
show power applied. A jumper must be installed at JP2 as VDDA is powered by the same supply as VIN.
J6–J10 single pin headers provide access to the IN+, IN–, RSTb inputs, and FLTb and RDY outputs of the Si8281. These signals can
be brought out to an external microcontroller using a ribbon cable (not supplied). FLTb is an open drain output and has a weak pull-up
resistor and LED D11 in series to VDDA. The open drain output allows multiple gate drivers' FLTb outputs to share the same microcon-
troller input.
Driver functionality can be exercised without microcontroller by applying a GNDA referenced PWM signal from a function generator to
the IN+ and IN– inputs. Maximum input voltage is VDDA.
DC-DC Operation
The isolated DC-DC converter is set to generate (with respect to VMID) 15 V for VDDB and –11 V for VSSB. LED D5 illuminates when
VDDB is powered. A jumper must be installed at JP1 to power VDDB from the DC-DC output.
Si8281 Isolated Gate Drive Connections
There are four different load options for Si8281 gate driver:
1. Through holes for a MOSFET or an IGBT in a TO-247 package (not supplied) at Q1.
2. Through holes for a MOSFET or an IGBT in a TO-220 package (not supplied) at Q2.
3. Through holes for a capacitor (not supplied) at C17.
4. Pads for a 1206-size surface mount capacitor (not supplied) at C11.
From top to bottom, the through holes for the transistor leads are Source, Drain, and Gate. Load transistors are biased by applying
voltage across VPWR and VMID terminals of J2. This voltage should not exceed the rated VDS of the transistor or 300 V, whichever is
lower. Supply voltage constraints are summarized in the table below.
Note: Si8281 can drive the gate of either high-side or low-side MOSFET or IGBT in a bridge configuration. When used as a high-side
gate driver, VMID is connected to the load. When used as a low-side gate driver, VMID is the return for the load.
For capacitive loads, capacitor value should be chosen to match the gate capacitance of the desired transistor. Supply voltage con-
straints are summarized in the table below.
Table 1.1. Supply Voltage Constraints
3.0 V ≤ VIN – GNDA = VDDA – GNDA ≤ 5.5 V
VSSB ≤ VMID < VDDB
UVLO+ < VDDB – VSSB < 30 V
VPWR < VDS (Q)
VPWR < 300 V
|GNDA – VSSB| < 5 kV
Note:
1. UVLO+ for the Si8281CD-IS is 12.3 V typically.
UG167: Si8281-EVB User's Guide
Overview and Setup
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1.2 Alternative Configurations
Positive Voltage Gate Drive Only
The standard configuration for the gate driver to apply positive voltage, VDDB–VMID, to the gate during the high drive portion of the
PWM cycle and negative voltage, VSSB–VMID, during the low drive portion of the PWM cycle. Alternatively, if only positive drive volt-
age is desired, remove R13 and install a 0 Ω resistor at R14.
Prototyping Area
If additional components are needed to evaluate the gate drive function for a particular load, there is a prototyping area just below Q2
locations.
1.3 Demonstrating Driver Functionality
Even with no load present, the basic functionality of the Si8281 can be demonstrated.
1. Ensure JP1 and JP2 have jumpers installed.
2. Apply 5 V to VIN to power both sides of the Si8281.
3. Short VPWR to VMID at J2 using a wire between the terminals of J2. This disables DSAT detection and allows for normal opera-
tion of the Si8281. Since both sides of Si8281 have been powered on, RDY will output 5 V, which can be observed at J8.
4. Apply 5 V to both J9, IN+ and J10, IN–. The Si8281 will drive low and –11 V can be observed across C17.
5. Apply 5 V to J9, IN+ and 0 V to J10, IN–. The Si8281 will drive high and 15 V can be observed across C17.
6. Remove the short between VPWR and VMID at J2.
7. With no path for DSAT current, the voltage at the DSAT pin rises and the Si8281 will drive the output low and pull FLTb to 0 V
which can be observed by D11 illuminating.
8. Once again, place the short between VPWR and VMID at J2. Pull RSTb to 0 V by pushing S1. This clears the fault and D11 will
turn off.
1.4 Quick Reference Tables
Table 1.2. Test Point Descriptions
Test Point Description Referenced to:
TP1 VIN GNDA
TP2 GNDA N/A
TP3 VPWR VMID
TP4 VDDB VMID
TP5 VMID N/A
TP6 VSSB VMID
TP7 GNDA N/A
TP8 VSW GNDA
TP9 T1_SEC8 VMID
TP10 T1_SEC5 VMID
TP11 VMID/GNDB N/A
TP13 VSNS VSSB
TP14 VMID N/A
TPV12 CLMP VSSB
TPV13 GATE VMID
UG167: Si8281-EVB User's Guide
Overview and Setup
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2. Schematics
TP7
GNDA
1
VIN
GNDA
GNDA
VMID
VDDB
VPWR
VMID
VSSB
VIN
SF1
BUMPER
SF2
BUMPER
SF3
BUMPER
SF4
BUMPER
Si8281
VIN
GNDA
VDDB
VMID
VSSB
VPWR
OUTPUT
INPUT
INPUT
TP1
VIN
TP2
GNDA
TP3
VPWR
TP4
VDDB
TP5
VMID
TP6
VSSB
J2
1
2
J3
1
2
3
J1
1
2
VDDB
VSSB
VPWR
VMID
TP14
VMID
Figure 2.1. Si8281-EVB Top Level Schematic
UG167: Si8281-EVB User's Guide
Schematics
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TPV12
CLMP
R27 NI
VL
D9 NI
GATE
D5
VDDB
R7
10K
VDDB
R9
10K
CLMP
VSSB
VH
CLMP
VDDA
D11
FLT
D4
VDDA
R6
10K
S1
RST
J11
VDDA
1
R8
10K
J6
RST 1
J7
FLT 1
J9
IN+ 1
J10
IN- 1
VIN
TP13
VSNS
T1
2.5uH
2
8
6
5
3
7
1
4
R10 25
VMID
JP2 JS2
R3 200K C10 1.5nF
R2
7.87K
R1
182K
J8
RDY 1
C3
10uF
C5
10uF
C1 10uF
C7
10uF
C8
0.1uF
C4
0.1uF
C6
0.1uF
D10 ES1F
C9
0.1uF
R4 100
C18
10uF
C16
390pF
DSAT
D1 B160
D2
B160
R12 1.0
R5
100
C2
100pF
GNDA
VIN
VIN
VDDB
VDDB
VMID
VSSB
VSSB
VPWR
VPWR
TP8
VSW
TP9
T1_SEC8
TP10
T1_SEC5
R28
10K
R29
10K
ISOLATION
U1
Si8281CD-IS
VDDA
4
VH 15
CLMP 13
VSW
2
GNDP
1
NC 18 VDDP
3
DSAT 17
VSNS 20
RST
6
FLT
7
VDDB 16 GNDA
5
RDY
8
COMP 19
VL 14
IN+
9
IN-
10
VMID 12
VSSB 11
VMID
VSSB
JP1 JS1
TPV13
GATE
Prototyping area
Discrete Capacitor Load
Resistor value and power rating for R10, R11,
R12 are dependent on switching frequency and
gate loading of the IGBT/MOSFET device.
1. DC/DC is built to drive to create +15/-11V.
2. To operate with positive voltage gate drive only:
a. Remove R13
b. Install R14 = 0 Ohm
c. Change divider VDDB-VSSB = (R1/R2 +1) x 1.05V
+IN/-IN have weak internal pull down
(4uA).
Signal sources should be placed as close
as possilbe to +IN/-IN inputs to minimize
noise coupling.
+IN and -IN should be terminated directly
to VDDA/GNDA accordingly if not used.
VDDB
C12
10uF
C13
0.1uF
R11 10
VH
R13 0
R14
0
NI
VL
C15
0.1uF
C14
10uF
J4 1
2
3
4
5
6
7
8
9
10
111315
121416
J5 1
2
3
4
5
6
7
8
9
10
111315
121416
TO-247 pinout place holder
GATE
DSAT
VMID
Q1
NI
Q2
NI
VMID
TO-220 pinout place holder
DSAT
C17
NI
C11
NI
GATE
VMID
VPWR
VPWR
VDDB
VDDB
TP11
VMID/GNDB
1
VSSB
VSSB
NI
NI
Figure 2.2. Si8281 Circuit Schematic
UG167: Si8281-EVB User's Guide
Schematics
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3. Layout
Figure 3.1. Si8281-EVB Top Silkscreen
Figure 3.2. Si8281-EVB Top Copper
UG167: Si8281-EVB User's Guide
Layout
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Figure 3.3. Si8281-EVB Bottom Silkscreen
Figure 3.4. Si8281-EVB Bottom Copper
UG167: Si8281-EVB User's Guide
Layout
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4. Bill of Materials
Table 4.1. Si8281-EVB Bill of Materials
Part Reference Description Manufacturer Manufacturer Part
Number
C1, C3, C5, C7, C12,
C14, C18
CAP, 10 μF, 50 V, ±20%, X7R, 1210 Venkel C1210X7R500-106M
C2 CAP, 100 pF, 50 V, ±20%, C0G, 0603 Venkel C0603C0G500-101M
C3 CAP, 390 pF, 100 V, ±20%, X7R, 0805 Venkel C0805X7R101-391M
C4, C6, C8, C9, C13,
C15
CAP, 0.1 μF, 50 V, ±10%, X7R, 0805 Venkel C0805X7R500-104K
C10 CAP, 1.5 nF, 250 V, ±10%, X7R, 0805 Venkel C0805X7R251-152K
C16 CAP, 390 pF, 50 V, ±10%, C0G, 0603 Venkel C0603C0G500-391K
D1, D2 DIO, SCHOTTKY, 60 V, 1 A, SMB Diodes Inc. B160-13-F
D4, D5, D11 LED, RED, 631 nM, 20 mA, 2 V, 54mcd, 0603 Lite-On Tech. LTST-C190KRKT
D10 DIO, FAST, 300 V, 1.0 A, SMA Fairchild ES1F
J1, J2 CONN, TERM BLOCK 2POS, 2.54 MM, RT PCB PHOENIX CONTACT 1725656
J3 CONN, TERM BLOCK 3POS, 2.54 MM, RT PCB PHOENIX CONTACT 1725669
J6, J7, J8, J9, J10 Header, Single Pin, Tin Plated Samtec TSW-101-07-T-S
J11, TP7, TP11 SOLDER TURRET, 0.064 inD, 0.105 inL Mill-Max 2551-2-00-44-00-00-0
7-0
JP1, JP2 Header, 2x1, 0.1 in pitch, Tin Plated Samtec TSW-102-07-T-S
JS1 JS2 Shunt, 1x2, 0.1 in pitch, Tin plating Samtec SNT-100-BK-T
R1 RES, 182 K, 1/10 W, ±1%, ThickFilm, 0603 Venkel CR0603-10W-1823F
R2 RES, 7.87 K, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-7871F
R3 RES, 200 K, 1/10 W, ±1%, ThickFilm, 0603 Venkel CR0603-10W-2003F
R4 RES, 100 Ω, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-1000F
R5 RES, 100 Ω, 1/10 W, ±1%, ThickFilm, 0603 Venkel CR0603-10W-1000F
R6, R7, R8, R9, R28,
R29
RES, 10 K, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-1002F
R10 RES, 25 Ω, 1/4 W, ±5%, ThickFilm, 1206 Venkel CR1206-4W-250J
R11 RES, 10 Ω, 1/4 W, ±1%, ThickFilm, 1206 Venkel CR1206-4W-10R0F
R12 RES, 1.0 Ω, 1/4 W, ±5%, ThickFilm, 1206 Venkel CR1206-4W-1R0J
R13, R14 RES, 0 Ω, 2 A, ThickFilm, 0805 Venkel CR0805-10W-000
S1 SWITCH, PB, NO, MOMENTARY, TACTILE, LIGHT
TOUCH 130GF, 6MM, PTH
Panasonic EVQ-PAD04M
SF1, SF2, SF3, SF4 HDW, BUMPON CYLINDRICAL, 0.312 x 0.215, BLK 3M SJ61A6
T1 TRANSFORMER, POWER, FLYBACK, 5kV ISOLATED,
2.5uH, 100nH LEAKAGE, 7:1, 5:1, SMT
UMEC UTB02241s
TP1, TP2, TP3, TP4,
TP5, TP6, TP14
TESTPOINT, BLACK, PTH Kobiconn 151-203-RC
UG167: Si8281-EVB User's Guide
Bill of Materials
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Part Reference Description Manufacturer Manufacturer Part
Number
TP8, TP9, TP10,
TP13
TESTPOINT, WHITE, PTH Kobiconn 151-201-RC
U1 IC, 4 AMP ISODRIVER WITH DC-DC, SO20 WB Silicon Labs Si8281CD-IS
UG167: Si8281-EVB User's Guide
Bill of Materials
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5. Ordering Guide
Table 5.1. Si8281-EVB Ordering Guide
Ordering Part Number (OPN) Description
Si8281-KIT Si8281 Isolated gate driver evaluation board kit.
UG167: Si8281-EVB User's Guide
Ordering Guide
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