Silicon Laboratories Si8284-EVB User manual

UG168: Si8284-EVB User's Guide
This document describes the operation of the Si8284-EVB.
The Si8284 Evaluation Kit contains the following items:
• Si8284-EVB
•Si8284CD-IS installed on the evaluation board.
KEY POINTS
• Discusses hardware overview and setup,
including:
• Si8284 low voltage side connections.
•DC-DC operation.
• Si8284 isolated gate drive connections.
• Offers alternative configurations.
• Demonstrates driver functionality.
• Shows Si8284-EVB schematics and
silkscreen/copper layout.
• Includes the bill of materials and ordering
guide.
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1. Overview and Setup
1.1 Hardware
Si8284-EVB can be used to demonstrate the isolated gate drive capabilities of the installed Si8284CD-IS. The Si8284 includes a DC-
DC converter used to supply isolated power to the gate driver.
Si8284 Low Voltage Side Connections
Supply power to the input side of Si8284 by applying 12 to 24 VDC to VDDP at terminal block J1. LED D6 above terminal block J1
illuminates to show power applied. For interfacing to the low voltage side of Si8284, VDDA supply must be between 3.0 and 5.5 VDC.
Either a separate supply can be connected to VDDA terminal on J1 or 5 VDC can be derived from VDDP through the regulator circuit
and directed to VDDA through a jumper at JP4. LED D5 below terminal block J1 illuminates to show VDDA power applied.
J6-J11 single pin headers provide access to the IN+, IN-, RSTb, and SH inputs and FLTb and RDY outputs of the Si8284. These sig-
nals can be brought out to an external microcontroller using a ribbon cable (not supplied). FLTb is an open drain output and has a pull-
up resistor to VDDA. The open drain output allows multiple gate drivers FLTb outputs to share the same microcontroller input.
Driver functionality can be exercised without microcontroller by applying a GNDA referenced PWM signal from a function generator to
the IN+ and IN- inputs. Maximum input voltage is VDDA.
DC-DC Operation
The isolated DC-DC converter is set to generate (with respect to VMID) 15 V for VDDB and -9 V for VSSB. LED D8 and D7 illuminates
when VDDB and VSSB are powered respectively. DC-DC operation can be turned off by pulling terminal J11 to VDDA.
Si8284 Isolated Gate Drive Connections
There is a provision for a MOSFET or an IGBT in a TO-247 package (not supplied) at Q1.
From top to bottom, the through holes for the transistor leads are Source, Drain, and Gate. Load transistors are biased by applying
voltage across VPWR and VMID terminals of J2. This voltage should not exceed the rated VDS of the transistor or 300 V, whichever is
lower. Supply voltage constraints are summarized in the table below.
Note: Si8284 can drive the gate of either high-side or low-side MOSFET or IGBT in a bridge configuration. VMID is the same net as the
load when driving the gate of a high side MOSFET or IGBT. For a gate drive for a low side MOSFET or IGBT, VMID is the return for the
load.
Table 1.1. Supply Voltage Constraints
3.0 V ≤ VDDA – GNDA ≤ 5.5 V
12 V ≤ VDDP ≤ 24 V
VSSB ≤ VMID < VDDB
UVLO + 1 < VDDB - VSSB < 30 V
VPWR < VDS (Q)
VPWR < 300 V
|GNDA – VSSB| < 5 kV
Note:
1. UVLO+ for the Si8284CD-IS is 12.3 V.
UG168: Si8284-EVB User's Guide
Overview and Setup
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1.2 Alternative Configurations
Positive Voltage Gate Drive Only
The standard configuration for the gate driver to apply positive voltage, VDDB-VMID, to the gate during the high drive portion of the
PWM cycle and negative voltage, VSSB-VMID, during the low drive portion of the PWM cycle. Alternatively, if only positive drive voltage
is desired, remove R13 and install a 0 Ω resistor at R19.
Prototyping Area
If additional components are needed to evaluate the gate drive function for a particular load, there is a prototyping area just below Q2
locations.
1.3 Demonstrating Driver Functionality
Even with no load present, the basic functionality of the Si8284 can be demonstrated.
1. Apply 24 V to VDDP to power both sides of the Si8284. With jumpers installed at JP4–JP8, D5–D8 will illuminate indicating sup-
plies are biased.
2. Leave VPWR unpowered. Install a jumper at JP9. This disables desaturation detection and allows for normal operation of the
Si8284. Since both sides of the Si8284 have been powered on, RDY will output 5 V, which can be observed at J8.
3. Apply 5 V to both J9, IN+ and J10, IN-. VL will turn on and –9 V will be observed across pins 1 and 3 of Q1.
4. Remove 5 V from J10 and allow IN- to be pulled to GNDA. VH will turn on and +15 V will be observed across pins 1 and 3 of Q1.
5. Remove the short between VPWR and VMID at JP9.
6. With no path for DSAT current, the voltage at the DSAT pin rises and the Si8284 will drive the output low and FLTb to 0V which
can be observed at J7.
7. Once again, place the short between VPWR and VMID at JP9. Apply 0 V to RSTb input at J6. This clears the fault and normal
operation is restored.
1.4 Quick Reference Tables
Table 1.2. Test Point Descriptions
Test Point Description Referenced to:
TP1 VDDA GNDA
TP3 VPWR VMID
TP4 VDDB VMID
TP5 VMID N/A
TP6 VSSB VMID
TP7 VDDP GNDA
TPV8 IGBT_GATE VMID
TP9 GNDA N/A
TPV9 DSAT VMID
TPV10 MOSFET_D GNDA
TPV11 MOSFET_G GNDA
TPV12 CLMP VSSB
UG168: Si8284-EVB User's Guide
Overview and Setup
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2. Schematics
SF3
BUMPER
TP6
VSSB
SF4
BUMPER
Si8284
GNDA
VDDB
VMID
VSSB
VPWR
VDDP
VDDA
TP1
VDDA
TP2
GNDA
TP3
VPWR
TP4
VDDB
TP5
VMID
SF1
BUMPER
SF2
BUMPER
GNDA VDDB
VDDA
VMID
VSSB
VDDB
VMID
VPWR
VMID
VPWR
VDDA
VSSB
GNDA
VDDP
VDDP
TP7
VDDP
OUTPUT
INPUT
INPUT
J3
1
2
3
J1
1
2
3TP8
VMID
TP9
GNDA
J2
1
2
Figure 2.1. Si8284-EVB Top Level Schematic
UG168: Si8284-EVB User's Guide
Schematics
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Resistor value and power rating for R10, R11,
R12 are depended on switching frequency and
gate loading of the IGBT/MOSFET device
JP6
JP7
JP8
Q2
FDT3612
R10 15
GNDA
TPV12
CLMP
C19
0.1uF
Q3
MMBT2222LT1
R27 NI
R15
0.1
VH
VL
CLMP
R16
10.0
R9
10K
VSSB
JP4
VSSB
D4
5.6V
JP5
JP9
DSAT Disable
R13 0
TPV9
DSAT
C7
10uF
C8
0.1uF
R19
0
NI
R8
10K
J6
RST 1
J7
FLT 1
R14
15K
J9
IN+ 1
J10
IN - 1
J4
NI 1
2
3
4
5
6
7
8
9
10
111315
121416
J5
NI 1
2
3
4
5
6
7
8
9
10
111315
121416
VDDP
Prototyping area
ISOLATION
U2
Si8284CD-IS
VDDA
4
VH 19
CLMP 17
RSN
2
GNDP
1
NC 22
ESW
3
DSAT 21
VSNS 24
SS
6
GNDA
7
VDDB 20
SH/FC
5
RST
8
COMP 23
VL 18
FLT
9
RDY
10
VMID 16
VSSB 15
IN+
11
IN -
12 VSSB 13
NC 14
R3 100K C10 1.5nF
R2
8.66K
R1
182K
J8
RDY 1
C3
10uF
C5
10uF
SH
C22
10uF
C9
0.1uF
C4
0.1uF
C6
0.1uF
VL
VH
CLMP
D3 ES1F
C16
390pF
DSAT
SH
D1 B160
D2 B160
R12 1.0
R5
100
C2
100pF
R21
10K
VDDB
VDDB
VMID
VSSB
VSSB
VPWR
D7 RED
VSSB
VPWR
R25 10K
C24
0.01uF
D8 RED
VDDB
R26 10K
1. DC/DC is built to drive gate to +15/ -9V
2. To operate with positive gate drive only:
a. Remove R13
b. Install R19 = 0 Ohm
c. Change divider VDDB-VSSB = (R1/R2 + 1) x 1.05V
VDDB
C23 0.22uF
R20
18.7K
VDDB
VMID
R22
10K
R23
10K
C12
10uF
C13
0.1uF
R11 10
VDDA
R4 100
C15
0.1uF
J11
SH 1
C14
10uF
Aux. VDDP to 5V VDDA circuit
These components can be
removed if a 5V source is
available to connect to VDDA
directly.
R14 = (VDDP - 5.6 )/0.001
R6 10K
TO-247 pinout place holder
DSAT
VMID
R24 10K
Q1
NI
D6 RED
VDDP
D5 RED
VDDA
VPWR
R18
100
C20
100pF
VDDB
+IN/-IN have weak internal pull down
(4uA).
Signal sources should be placed as close
as possible to +IN/-IN inputs to minimize
noise coupling.
+IN and - IN should be terminated directly
to VDDA/GNDA accordingly if not used.
VDDA
VDDP
VDDP = 12V to 24V
VDDP
VDDA
TPV8
IGBT_GATE
VSSB
TPV10
MOSFET_D
VSSB
TPV11
MOSFET_G
T2 25uH
2
8
6
5
3
7
1
4
VMID
D9 NI
Figure 2.2. Si8284 Circuit Schematic
UG168: Si8284-EVB User's Guide
Schematics
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3. Layout
Figure 3.1. Si8284-EVB Top Silkscreen
Figure 3.2. Si8284-EVB Top Copper
UG168: Si8284-EVB User's Guide
Layout
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Figure 3.3. Si8284-EVB Bottom Silkscreen
Figure 3.4. Si8284-EVB Bottom Copper
UG168: Si8284-EVB User's Guide
Layout
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4. Bill of Materials
Table 4.1. Si8284-EVB Bill of Materials
Part Reference Description Manufacturer Manufacturer Part
Number
C2, C20 CAP, 100 pF, 50 V, ±20%, C0G, 0603 Venkel C0603C0G500-101M
C3, C5, C7, C12,
C14, C22
CAP, 10 μF, 50 V, ±20%, X7R, 1210 Venkel C1210X7R500-106M
C4, C6, C8, C9, C13,
C15, C19
CAP, 0.1 μF, 50 V, ±10%, X7R, 0805 Venkel C0805X7R500-104K
C10 CAP, 1.5 nF, 250 V, ±10%, X7R, 0805 Venkel C0805X7R251-152K
C16 CAP, 390 pF, 50 V, ±10%, C0G, 0603 Venkel C0603C0G500-391K
C23 CAP, 0.22 μF, 25 V, ±10%, X7R, 0603 Venkel C0603X7R250-224K
C24 CAP, 0.01 μF, 10 V, ±20%, X7R, 0603 Venkel C0603X7R100-103M
D1, D2 DIO, SCHOTTKY, 60 V, 1 A, SMB Diodes Inc. B160-13-F
D3 DIO, FAST, 300 V, 1.0 A, SMA Fairchild ES1F
D4 DIO, ZENER, 5.6 V, 200 mW, SOD323 DIODES INC BZT52C5V6S-F-7
D5, D6, D7, D8 LED, RED, 631 nM, 20 mA, 2 V, 54mcd, 0603 LITE-ON TECHNOLOGY
CORP
LTST-C190KRKT
D9 DIO, SWITCH, ULTRA FAST, 800 V, 1.0 A, SMA Diodes Inc. US1K-13-F
J1, J3 CONN, TERM BLOCK 3POS, 2.54 MM, RT PCB PHOENIX CONTACT 1725669
J2 CONN, TERM BLOCK 2POS, 2.54MM, RT PCB PHOENIX CONTACT 1725656
J4, J5 Header, 8x2, 0.1in pitch, Tin Plated Samtec TSW-108-07-T-D
J6, J7, J8, J9, J10,
J11
Header, Single Pin, Tin Plated Samtec TSW-101-07-T-S
JP4, JP5, JP6, JP7,
JP8, JP9
Header, 2x1, 0.1in pitch, Tin Plated Samtec TSW-102-07-T-S
Q2 TRANSISTOR, MOSFET, N-CHNL, 100 V, 3.7A, 3 W,
Switching, SOT223
Fairchild FDT3612
Q3 TRANSISTOR, NPN, 30 V, 600 mA, SOT23 On Semi MMBT2222LT1
R1 RES, 182K, 1/10 W, ±1%, ThickFilm, 0603 Venkel CR0603-10W-1823F
R2 RES, 8.66K, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-8661F
R3 RES, 100K, 1/10 W, ±1%, ThickFilm, 0603 Venkel CR0603-10W-1003F
R4, R5, R18 RES, 100 Ω, 1/10 W, ±1%, ThickFilm, 0603 Venkel CR0603-10W-1000F
R6, R8, R9, R21,
R22, R23, R24, R25,
R26
RES, 10K, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-1002F
R10, R27 RES, 15 Ω, 1/4 W, ±5%, ThickFilm, 1206 Venkel CR1206-4W-150J
R11 RES, 10 Ω, 1/4 W, ±1%, ThickFilm, 1206 Venkel CR1206-4W-10R0F
R12 RES, 1.0 Ω, 1/4 W, ±5%, ThickFilm, 1206 Venkel CR1206-4W-1R0J
R13, R19 RES, 0 Ω, 2A, ThickFilm, 0805 Venkel CR0805-10W-000
R14 RES, 15K, 1/8 W, ±1%, ThickFilm, 0805 Venkel CR0805-8W-1502F
UG168: Si8284-EVB User's Guide
Bill of Materials
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Part Reference Description Manufacturer Manufacturer Part
Number
R15 RES, 0.1 Ω, 1/2 W, ±1%, ThickFilm, 1206 Venkel LCR1206-R100F
R16 RES, 10.0 Ω, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-10R0F
R20 RES, 18.7K, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-1872F
SF1, SF2, SF3, SF4 HDW, BUMPON CYLINDRICAL, 0.312 x 0.215, BLK 3M SJ61A6
T2 TRANSFORMER, POWER, FLYBACK, 5 kV ISOLATED,
25 μH PRIMARY, 2 windings N = 1.25, N = 0.75, SMT
Coilcraft TA7618-AL
TP1, TP2, TP3, TP4,
TP5, TP6, TP7, TP8,
TP9
TESTPOINT, BLACK, PTH Kobiconn 151-203-RC
U2 IC, 4 AMP ISODRIVER WITH INTEGRATED DC/DC CON-
VERTER, 12V UVLO, SO24 WB
SiLabs Si8284CD-IS
UG168: Si8284-EVB User's Guide
Bill of Materials
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5. Ordering Guide
Table 5.1. Si8284-EVB Ordering Guide
Ordering Part Number (OPN) Description
Si8284-KIT Si8284 Isolated gate driver evaluation board kit.
UG168: Si8284-EVB User's Guide
Ordering Guide
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