Texas Instruments TPS2373-4EVM-758 User manual

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TPS2373-4EVM-758 Evaluation Module
User's Guide
SLUUBJ1A–February 2017–Revised June 2017
TPS2373-4EVM-758 Evaluation Module
This user’s guide describes the TPS2373-4 evaluation module (TPS2373-4EVM-758). The TPS2373-
4EVM-758 contains evaluation and reference circuitry for the TPS2373-4. The TPS2373-4 device is an
IEEE 802.3bt-compliant, powered-device (PD) controller optimized for isolated converter topologies. The
TPS2373-4EVM-758 is designed for high-efficiency, 70-W, PD solutions.
Contents
1 Introduction ................................................................................................................... 2
2 Electrical Specifications..................................................................................................... 2
3 Description.................................................................................................................... 3
4 Schematic..................................................................................................................... 4
5 General Configuration and Description ................................................................................... 6
6 TPS237xEVM-758 Performance Data .................................................................................... 8
7 EVM Assembly Drawings and Layout Guidelines ....................................................................... 9
8 Bill of Material............................................................................................................... 14
List of Figures
1 TPS2373-4EVM-758 PD Front-End Schematic.......................................................................... 4
2 TPS2373-4EVM-758 PD and DC/DC Converter Schematic........................................................... 5
3 Startup Response to Full Load (14 A) for a 48-V Input................................................................. 8
4 Transient Response from 7 A to 14 A for a 48-V Input................................................................. 8
5 Efficiency of the TPS2373-4EVM-758, VIN = 48 V....................................................................... 9
6 Top Side Component Placement.......................................................................................... 9
7 Top Side Routing........................................................................................................... 10
8 Layer 2 Routing............................................................................................................. 10
9 Layer 3 Routing............................................................................................................. 11
10 Bottom Side Routing....................................................................................................... 11
11 Bottom Component Placement........................................................................................... 12
List of Tables
1 TPS2373-4EVM-758 Electrical and Performance Specifications at 25°C............................................ 2
2 Connector Functionality..................................................................................................... 6
3 Test Points.................................................................................................................... 6
4 Jumper Descriptions......................................................................................................... 7
5 TPS237xEVM-758 BOM .................................................................................................. 14
Trademarks
All trademarks are the property of their respective owners.

Introduction www.ti.com
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TPS2373-4EVM-758 Evaluation Module
1 Introduction
The TPS2373-4EVM-758 allows reference circuitry evaluation of the TPS2373-4. It contains input and
output power connectors and an array of on-board test points for circuit evaluation.
1.1 Features
The TPS2373-4EVM-758 features include:
• High-efficiency active clamp-forward converter
• Class 8, 5-V, 14-A, 70-W, DC output
1.2 Applications
The TPS2373-4EVM-758 can be used in the following applications:
• Voice over internet protocol – IP telephones
• Wireless LAN – wireless access points
• Security – wired IP cameras
• IoT applications
2 Electrical Specifications
Table 1 lists the EVM electrical specifications.
Table 1. TPS2373-4EVM-758 Electrical and Performance Specifications at 25°C
Parameter Test Conditions Min Typ Max Unit
PD Power Interface
Input Voltage Applied to the power pins of connectors J2 or J4 0 57 V
Input UVLO, PoE input
J2 Rising input voltage 36 V
Falling input voltage 30 V
Detection Voltage At device terminals 3 10 V
Classification Voltage At device terminals 10 23 V
Classification Current RclassA = 63.4 Ω38 42 mA
RclassB = 90.9 Ω26.5 29.3 mA
Inrush Current-Limit 275 395 mA
Operating Current-Limit 1.9 2.5 A
DC/DC Converter (UCC2897A)
Output Voltage VIN = 48 V, ILOAD ≤ILOAD (max) 5.17 5.22 V
Output Current 41.2 ≤VIN ≤57 V 14 A
Output Ripple Voltage
Peak-to-Peak VIN = 48 V, ILOAD = 14 A 100 mV
Efficiency, End-to-End VIN = 48 V, ILOAD = 1 A 73 % VIN = 48 V, ILOAD = 6 A 92 %
VIN = 48 V, ILOAD = 14 A 91 %
Switching Frequency 200 kHz

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TPS2373-4EVM-758 Evaluation Module
3 Description
The TPS2373-4EVM-758 enables full evaluation of the TPS2373-4 device. Refer to the schematic shown
in Figure 1 and Figure 2. Ethernet power is applied from J1 and is dropped to the FET bridge rectifier. At
the output of the FET bridge is the EMI and EMC filter and transient protection for the TPS2373-4.
Input power can also be applied at J3 from a DC source when power at J1 is not present or when the
DC/DC converter is being evaluated and not the PoE front end.
The TPS2373-4 (U1) PD controller is shown in Figure 1. R30 provides the detection signature while J7
and J10 allow user selection of the classification signature and desired power level. To the right of U1 is
the switched side of the PD controller. The TPS2373-4 RTN pin provides inrush, current limited turn on,
and charge of the bulk capacitor C28 and C62.
The DC/DC converter is a high-efficiency, active clamp-forward converter. The primary (Q16) switching
MOSFET is driven from the U2 OUT pin and the secondary (Q13/Q15) synch switching MOSFET is in a
self-driven configuration.
Output voltage feedback is provided with U3 and associated error amplifier (U4) circuitry. R55 provides a
means for error injection to measure the frequency response of the converter. This feedback circuit drives
the U2 FB pin which provides a voltage proportional to the output load current. As the output load current
decreases, the FB pin voltage decreases.

0.01µF
100V
C1
0.01µF
100V
C2
0.01µF
100V
C3
0.01µF
100V
C4
75.0
R1
75.0
R2
75.0
R3
75.0
R4
ETHERNET POWER
40-57VDC
45W MAX
DATA PORT
PR12 PR36 PR45 PR78
EARTH
TCT1 1
TD1+ 2
TD1- 3
TCT2 4
TD2+ 5
TD2- 6
TCT3 7
TD3+ 8
TD3- 9
TCT4 10
TD4+ 11
TD4- 12 MX4-
13
MX4+
14
MCT4
15
MX3-
16
MX3+
17
MCT3
18
MX2-
19
MX2+
20
MCT2
21
MX1-
22
MX1+
23
MCT4
24
T1
7490220122
PR12
PR36
PR45
PR78
TP1 TP2 TP3 TP4
PAIR12 PAIR36 PAIR45 PAIR78
EARTH
TP5
1000pF
C5
2
3
4
1
5
6
7
8
9
10
11
12
J1
2
3
4
1
5
6
7
8
9
10
11
12
J2
EARTH
EARTH
301k
R5
301k
R6
301k
R7
301k
R8
301k
R19
301k
R20
301k
R21
301k
R22
66.5k
R9
66.5k
R10
66.5k
R11
66.5k
R12
66.5k
R15
66.5k
R16
66.5k
R17
66.5k
R18
1000pF
C6
1000pF
C7
1000pF
C8
1000pF
C9
1000pF
C10
1000pF
C11
1000pF
C12
1000pF
C13
1000pF
C16
1000pF
C17
1000pF
C18
1000pF
C19
1000pF
C20
1000pF
C21
1000pF
C22
1000pF
C23
D13
100V
D14
100V
D15
100V
D16
100V
D19
100V
D20
100V
D21
100V
D22
100V
8.2V
D9
8.2V
D10
8.2V
D11
8.2V
D12
8.2V
D23
8.2V
D24
8.2V
D25
8.2V
D26
3
1
2
Q2
3
1
2
Q3
3
1
2
Q4
3
1
2
Q5
3
1
2
Q7
3
1
2
Q8
3
1
2
Q9
3
1
2
Q10
D18
100V
3
1
2
Q6
499k
R13
301k
R14
PR12
PR36
PR45
PR78
PR12 PR36 PR45 PR78
BR+
BR+
BR-
1000pF
100V
C14
1000pF
100V
C15
VDD
VSS1
21
58V
D17
300 ohm
L1
DNP
300 ohm
L2
DNP
BR-
Additional EMI filtering may be required
13
15
9
7
8
Q1C
14
16
4
5
6
Q1B
12
1013
1115
Q1D
1
214
316
Q1A
13
15
9
7
8
Q11C
14
16
4
5
6
Q11B
12
1013
1115
Q11D
1
214
316
Q11A
1
3
2
D1
100V
DNP
1
3
2
D2
100V
DNP
1
3
2
D3
100V
DNP
1
3
2
D4
100V
DNP
1
3
2
D5
100V
DNP
1
3
2
D6
100V
DNP
1
3
2
D7
100V
DNP
1
3
2
D8
100V
DNP
1.00k
R67
3
1
2
Q18
100k
R68
100pF
C66 ADPT
RTN
60 ohm
L8
60 ohm
L9
1 2
3 4
L10
75.0
R74
75.0
R71
75.0
R73
1000pF
C67
75.0
R72
EARTH
FDMQ8205A can be used for an integrated FET bridge solution in space constrained applications
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Schematic www.ti.com
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TPS2373-4EVM-758 Evaluation Module
4 Schematic
Figure 1 and Figure 2 illustrate the EVM schematic.
Figure 1. TPS2373-4EVM-758 PD Front-End Schematic

VDD
1
DEN
2
CLS1
3
VSS 4
VSS 5
CLS2
6
REF
7
AMPS_CTL
8
MPS_DUTY 9
APD
10
RTN 11
RTN 12
PG 13 VC_OUT
14
VC_IN
15
UVLO_SEL
16
TPL 17
TPH 18
BT 19
NC 20
PAD 21
U1
TPS2373-4RGW
VDD
VSS1
TP9
TP17
VDD
VSS1
Port Current
0.1µF
C29
J11
24.9k
R30
63.4
R31
VSS
1.21k
R36
249
R35
140
R34
90.9
R33
Class 3
Class 2
Class 1
Class 0
63.4
R37
12 34 56 78 910
J10
Class 4
4-Pair
90.9
R32
Class 4
Class 3
12 34
J7
49.9k
R40
2k
R39
1.00k
R38
TP16
AMPS_CTL
TP18
REF
AMPS_Connect
TP19
VSS
J12
TPH
TPL
BT
MPS_DUTY
RTN
100µF
C62
DNP
PG
RTN
TP14
TP15
TP10
VDD
MPS_DUTY
1 2 3
J5
VSS
53.6k
R25
VSS
TP7
MPS_DUTY
Yellow
D28
Yellow
D29
Yellow
D30
TPH TPL BT
3.74k
R26
3.74k
R27
3.74k
R28
TPH TPL BT
J4
TP11 TP12 TP13
BIAS
RTN
RTN
RTN
RTN
VCIN
GND
VOUT
RON 1
ROFF 2
VREF 3
SYNC
4
GND 5
CS
6
RSLOPE 7
FB
8
SS/SD
9
PGND 10
AUX 11
OUT 12
PVDD
13
VDD
14
LINEUV
15
LINEOV
16
NC
17
VIN
18
NC
19
RTDEL 20
EP 21
U2
UCC2897ARGPR
2.2µF
C31
2.2µF
C30
RTN
200kHz
VCOUT
VDD
RTNRTN
RTN
RTN
RTN
RTN
1000pF
C52
RTN GND
D33
1.4V
D35
1.4V
D36
1.4V
100µF
C35
RTN
4
7,8
1,2,3
5,6, Q14
2.2µF
C33
2.2µF
C32
RTN
2,4
Q17
1
2
4
3
U3
HMHA2801A
RTN
RTN
RTN 150V
7,8
1,2,3
5,6,
Q16
2,4
Q12
D31
100V
10V
D32
511
R41
1.82k
R45
7,8
1,2,3
5,6,
Q15
0.033µF
C34
30V
7,8 1,2,3
5,6,
Q13
0.075
R47
2
1
3
U4
TLV431AIDBZR
VOUT
GND
665
R57
1µF
C60
3.3µH
L5
100µF
C36 470µF
C37
0.047µF
C47
GND
D34
0.88V
5V/14A
VCOUT
1.18k
R52
60.4k
R48
12.1k
R53
182k
R49
SS
SS
TP27
VIN
VCIN
VCOUT
0.1µF
C49
1µF
C55
RTN
10.0k
R43
0.1µF
C46
1.00k
R46
0.047µF
C50
1000pF
C53
20k
R50
100k
R51
90.9k
R54
100k
R56
1µF
C56
2.00k
R61 7.68k
R59
1µF
C57
50
R55
10.0k
R62
10.0k
R58
0.047µF
C58
20.0k
R63
1µF
C59
3.16k
R64
J13
1000pF
100V
C24 1000pF
100V
C25
40-57VDC
GND 300 ohm
L3
DNP
300 ohm
L4
DNP
J3
RTN
237k
R23
9.53k
R24
0.01µF
C26
APD
APD
APD
TP21
VDS
TP25
RTN
VCIN
TP24
TP26
FB
TP22
GATE
TP20
VOUT
TP23
GND
TP28
LOOP
0
R44
100µF
C28
47pF
C48
J6
APD_Connect
APD
1
3
2
D27
100V
4.9µH
L7
1
3
2
D38
30V
1000pF
C63
DNP
GND
R64 = 3.01k for 5.3V Output
R64 = 2.87k for 5.5V Output
470pF
C27
D37
100V
10
R42
7% DUTY11.2% DUTY
OPEN: 5.4%
Yellow
D39
GND
1.33k
R65
J15
LED
0.01µF
C64
0.1µF
C65
TP29
UVLO_SEL
0
R66
RTN
RTN
10.0k
R70
191k
R69
ADPT
250µH
1 2
3 4
L11
TP30
VCOUT
1mH
L6
0.1µF
C69
4700pF
C72
4700pF
C71
4700pF
C70
2.2µF
C68
8
6
11
10
2
5
3
4
7
1
T2
750343164
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Figure 2. TPS2373-4EVM-758 PD and DC/DC Converter Schematic

General Configuration and Description www.ti.com
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5 General Configuration and Description
5.1 Physical Access
Table 2 lists the EVM connector functionality and Table 3 describes the test point availability. Table 4
describes the jumper selections of the EVM.
Table 2. Connector Functionality
Connector Label Description
J1 ETHERNET
POWER PoE input. Connect to PSE power and data source.
J2 DATA Ethernet data passthrough. Connect to downstream Ethernet device.
J13 Output Output connector to load.
J3 DC/DC Input DC/DC converter input bypassing the PoE front-end. Connect a DC
power supply 40-57.
Table 3. Test Points
Test Point Label Description
TP1 PAIR 12 Data pair from Pins 1 and 2 of J1
TP2 PAIR 36 Data pair from Pins 3 and 6 of J1
TP3 PAIR 45 Data pair from Pins 4 and 5 of J1
TP4 PAIR 78 Data pair from Pins 7 and 8 of J1
TP5 EARTH Connect to earth ground when available
TP7 MPS_DUTY MPS_DUTY pin of the TPS2373-4
TP9, TP10 VDD Input voltage of PD system
TP11 TPH TPH output of the TPS2373-4
TP12 TPL TPL output of the TPS2373-4
TP13 BT BT output of the TPS2373-4
TP14 PG Power Good output of the TPS2373-4
TP15, TP25 RTN Load side return voltage
TP16 AMPS_CTL AMPS_CTL output voltage
TP17 VSS1 EMI filter return side voltage
TP18 REF Reference pin output voltage of the TPS2373-4
TP19 VSS PD side return voltage
TP20 VOUT Converter output voltage
TP21 VDS Drain voltage of the primary FET of the converter
TP22 GATE Gate voltage of the primary FET of the converter
TP23 GND Secondary ground connection
TP24 VCIN Bias winding circuit output voltage
TP26 FB Feedback pin voltage of U2 PWM controller
TP27 VIN Startup input voltage of U2 (open circuited)
TP28 LOOP Feedback connection for frequency response measurements
TP29 UVLO_SEL Select UVLO of U1 (open circuited)
TP30 VCOUT Output voltage of advanced startup of U1

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Table 4. Jumper Descriptions
Jumper Description
J4 Jump to power TPH/TPL/BT through the bias winding. Or open to power through external circuit
J5 Automatic MPS duty cycle selection
J6 Jump for adapter priority
J7 CLSA selection
J10 CLSB selection
J11 Can be used to measure port current; otherwise, J11 should be shorted
J12 Jump to add auto MPS current
J15 Jump to power output LED

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6 TPS237xEVM-758 Performance Data
6.1 Startup
Figure 3 illustrates the startup response of the TPS2373-4EVM-758.
Figure 3. Startup Response to Full Load (14 A) for a 48-V Input
6.2 Transient Response
Figure 4 illustrates the transient response of the TPS2373-4EVM-758.
Figure 4. Transient Response from 7 A to 14 A for a 48-V Input

Output Current (A)
Efficiency
0 2 4 6 8 10 12 14
0
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
D001
PoE
Converter
Adapter
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6.3 Efficiency
Figure 5 illustrates the efficiency of the TPS237xEVM-758.
Figure 5. Efficiency of the TPS2373-4EVM-758, VIN = 48 V
7 EVM Assembly Drawings and Layout Guidelines
This section contains the assembly drawings and layout guidelines.
7.1 PCB Drawings
Figure 6 through Figure 11 show component placement and layout of the TPS2373-4EVM-758.
Figure 6. Top Side Component Placement

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Figure 7. Top Side Routing
Figure 8. Layer 2 Routing

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Figure 9. Layer 3 Routing
Figure 10. Bottom Side Routing

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Figure 11. Bottom Component Placement
7.2 Layout Guidelines
The layout of the PoE front end should follow power and EMI and ESD best-practice guidelines. A basic
set of recommendations include:
• Parts placement must be driven by power flow in a point-to-point manner; RJ-45, Ethernet transformer,
diode bridges, TVS and 0.1-μF capacitor, and TPS237x converter input bulk capacitor.
• Make all leads as short as possible with wide power traces and paired signal and return.
• No crossovers of signals from one part of the flow to another are allowed.
• Spacing consistent with safety standards like IEC60950 must be observed between the 48-V input
voltage rails and between the input and an isolated converter output.
• Place the TPS237x over split, local ground planes referenced to VSS for the PoE input and to
COM/RTN for the converter. Whereas the PoE side may operate without a ground plane, the converter
side must have one. Do not place logic ground and power layers under the Ethernet input or the
primary side of the converter.
• Use large copper fills and traces on SMT power-dissipating devices, and use wide traces or overlay
copper fills in the power path.
The DC/DC converter layout benefits from basic rules such as:
• Pair signals to reduce emissions and noise, especially the paths that carry high-current pulses which
include the power semiconductors and magnetics.
• Minimize trace length of high current, power semiconductors, and magnetic components.
• Where possible, use vertical pairing.
• Use the ground plane for the switching currents carefully.
• Keep the high-current and high-voltage switching away from low-level sensing circuits including those
outside the power supply.
• Use proper spacing around the high-voltage sections of the converter.

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7.3 EMI Containment
The following guidelines are provided for EMI containment:
• Use compact loops for dv/dt and di/dt circuit paths (power loops and gate drives).
• Use minimal, yet thermally adequate, copper areas for heat sinking of components tied to switching
nodes (minimize exposed radiating surface).
• Use copper ground planes (possible stitching) and top-layer copper floods (surround circuitry with
ground floods).
• Use a 4-layer PCB, if economically feasible (for better grounding).
• Minimize the amount of copper area associated with input traces (to minimize radiated pickup).
• Hide copper associated with switching nodes under shielded magnetics, where possible.
• Heat sink the quiet side of components instead of the switching side, where possible (like the output
side of inductor).
• Use Bob Smith terminations, Bob Smith EFT capacitor, and Bob Smith plane.
• Use Bob Smith plane as ground shield on the input side of the PCB (creating a phantom or literal earth
ground).
• Use LC filter at DC/DC input.
• Dampen high-frequency ringing on all switching nodes, if present (allow for possible snubbers).
• Control rise times with gate-drive resistors and possibly snubbers.
• Switching frequency considerations
• Use of EMI bridge capacitor across isolation boundary (isolated topologies).
• Observe the polarity dot on inductors (embed noisy end).
• Use of ferrite beads on input (allow for possible use of beads or 0-Ωresistors).
• Maintain physical separation between input-related circuitry and power circuitry (use ferrite beads as
boundary line).
• Balance efficiency versus acceptable noise margin.
• Possible use of common-mode inductors.
• Possible use of integrated RJ-45 jacks (shielded with internal transformer and Bob Smith terminations).
• End-product enclosure considerations (shielding).

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8 Bill of Material
Table 5 lists the EVM BOM.
Table 5. TPS237xEVM-758 BOM
Designator Qty Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
!PCB1 1 Printed Circuit Board PWR758 Any - -
C1, C2, C3, C4 4 0.01uF CAP, CERM, 0.01uF, 100V, +/-10%, X7R, 0603 0603 C1608X7R2A103K TDK
C5 1 1000pF CAP, CERM, 1000 pF, 2000 V, +/- 10%, X7R, 1808 1808 GR442QR73D102KW01L Murata
C6, C7, C8, C9, C10, C11, C12,
C13, C16, C17, C18, C19, C20,
C21, C22, C23
16 1000pF CAP, CERM, 1000pF, 50V, +/-10%, X7R, 0603 0603 C1608X7R1H102K TDK
C14, C15, C24, C25 4 1000pF CAP, CERM, 1000pF, 100V, +/-10%, X7R, 0603 0603 C1608X7R2A102K TDK
C26 1 0.01uF CAP, CERM, 0.01uF, 50V, +/-10%, X7R, 0603 0603 C1608X7R1H103K TDK
C27 1 470pF CAP, CERM, 470 pF, 50 V, +/- 5%, C0G/NP0, 0603 0603 06035A471JAT2A AVX
C28 1 100uF CAP, AL, 100 µF, 100 V, +/- 20%, 0.17 ohm, SMD SMT Radial J16 EEV-FK2A101M Panasonic
C29, C69 2 0.1uF CAP, CERM, 0.1 µF, 100 V, +/- 10%, X7R, 0805 0805 C0805C104K1RACTU Kemet
C30, C31, C32, C33 4 2.2uF CAP, CERM, 2.2uF, 100V, +/-10%, X7R, 1210 1210 GRM32ER72A225KA35L Murata
C34 1 0.033uF CAP, CERM, 0.033uF, 250V, +/-10%, X7R, 1206 1206 GRM31CR72E333KW03L Murata
C35, C36 2 100uF CAP, CERM, 100 µF, 10 V, +/- 20%, X5R, 1206_190 1206_190 C3216X5R1A107M160AC TDK
C37 1 470uF CAP, TA, 470 µF, 6.3 V, +/- 10%, 0.1 ohm, SMD 7343-31 TPSD477K006R0100 AVX
C46, C49 2 0.1uF CAP, CERM, 0.1 µF, 25 V, +/- 10%, X7R, 0603 0603 885012206071 Wurth Elektronik
C47 1 0.047uF CAP, CERM, 0.047 µF, 50 V, +/- 10%, X7R, 0603 0603 C1608X7R1H473K TDK
C48 1 47pF CAP, CERM, 47 pF, 50 V, +/- 5%, C0G/NP0, 0603 0603 06035A470JAT2A AVX
C50 1 0.047uF CAP, CERM, 0.047 µF, 25 V, +/- 5%, X7R, 0603 0603 06033C473JAT2A AVX
C52 1 1000pF CAP, CERM, 1000pF, 3kV, 1808 1808 STD STD
C53 1 1000pF CAP, CERM, 1000 pF, 50 V, +/- 10%, C0G/NP0, 0603 0603 06035A102KAT2A AVX
C55 1 1uF CAP, CERM, 1 µF, 25 V, +/- 10%, X7R, 0805 0805 C2012X7R1E105K TDK
C56 1 1uF CAP, CERM, 1 µF, 16 V, +/- 10%, X7R, 0603 0603 885012206052 Wurth Elektronik
C57 1 1uF CAP, CERM, 1 µF, 25 V, +/- 10%, X7R, 0603 0603 C0603C105K3RACTU Kemet
C58 1 0.047uF CAP, CERM, 0.047 µF, 50 V, +/- 10%, X5R, 0603 0603 C1608X5R1H473K080AA TDK
C59 1 1uF CAP, CERM, 1 µF, 35 V, +/- 10%, X7R, 0603 0603 C1608X7R1V105K080AC TDK
C60 1 1uF CAP, CERM, 1 µF, 16 V, +/- 10%, X5R, 0805 0805 0805YD105KAT2A AVX
C64 1 0.01uF CAP, CERM, 0.01 µF, 50 V, +/- 10%, X5R, 0603 0603 GRM188R61H103KA01D Murata
C65 1 0.1uF CAP, CERM, 0.1 µF, 25 V, +/- 10%, X5R, 0603 0603 06033D104KAT2A AVX
C66 1 100pF CAP, CERM, 100 pF, 50 V, +/- 5%, C0G/NP0, 0603 0603 885012006057 Wurth Elektronik
C67 1 1000pF CAP, CERM, 1000 pF, 2000 V, +/- 10%, X7R, 1812 1812 1812GC102KA1 AVX
C68 1 2.2uF CAP, CERM, 2.2 µF, 100 V, +/- 10%, X7R, 1210 1210 GRM32ER72A225KA35L Murata
C70, C71, C72 3 4700pF CAP, CERM, 4700 pF, 2000 V, +/- 10%, X7R, 1812 1812 1812GC472KAT1A AVX
D9, D10, D11, D12, D23, D24,
D25, D26 8 8.2V Diode, Zener, 8.2V, 200mW, SOD-323 SOD-323 MMSZ5237BS-7-F Diodes Inc.
D13, D14, D15, D16, D18, D19,
D20, D21, D22 9 100V Diode, Switching, 100V, 0.2A, SOD-323 SOD-323 MMDL914-TP Micro Commercial
Components

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TPS2373-4EVM-758 Evaluation Module
Table 5. TPS237xEVM-758 BOM (continued)
Designator Qty Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
D17 1 58V Diode, TVS, Uni, 58V, 600W, SMB SMB SMBJ58A-13-F Diodes Inc.
D27 1 100V Diode, Schottky, 100 V, 5 A, PowerDI5 PowerDI5 PDS5100-13 Diodes Inc.
D28, D29, D30, D39 4 Yellow LED, Yellow, SMD LED_0603 150060YS75000 Wurth Elektronik
D31 1 100V Diode, Switching, 100V, 0.2A, SOD-123 SOD-123 MMSD4148T1G ON
Semiconductor
D32 1 10V Diode, Zener, 10 V, 500 mW, SOD-123 SOD-123 MMSZ5240B-7-F Diodes Inc.
D33, D35, D36 3 1.4V Diode, Ultrafast, 100V, 0.25A, SOD-323 SOD-323 BAS316,115 NXP
Semiconductor
D34 1 0.88V DIODE ULTRA FAST 100V 2A SMA SMA MURA110 ON Semi
D37 1 100V Diode, Switching, 100 V, 0.2 A, SOD-123 SOD-123 MMSD914T1G ON
Semiconductor
D38 1 30V Diode, Schottky, 30 V, 0.2 A, SOT-23 SOT-23 BAT54S-7-F Diodes Inc.
H1, H2, H3, H4 4 Bumpon, Hemisphere, 0.375 X 0.235, Black Black Bumpon SJ61A2 3M
J1, J2 2 RJ-45, No LED, tab up, R/A, TH 16.26x14.54x15.75 1-406541-1 TE Connectivity
J3 1 Terminal Block, 3.5 mm, 2x1, Tin, TH Terminal Block, 3.5 mm,
2x1, TH 39357-0002 Molex
J4, J6, J11, J12, J15 5 Header, 2.54 mm, 2x1, Gold, R/A, SMT Header, 2.54 mm, 2x1,
R/A, SMT 87898-0204 Molex
J5 1 Header, 100mil, 3x1, Gold, SMT Samtec_TSM-103-01-X-SV TSM-103-01-L-SV Samtec
J7 1 Header, 100mil, 2x2, Tin, SMT 2x2 100mil Tin Header 15-91-2040 Molex
J10 1 Header, 100mil, 5x2, Tin, SMT 500x180x290mil TSM-105-01-T-DV-P Samtec
J13 1 Terminal Block, 2x1, 6.35mm, Green, TH Terminal Block, 2x1,
6.35mm, Green, TH 1714955 Phoenix Contact
L5 1 3.3uH Inductor, Shielded, Composite, 3.3uH, 25A, 0.0037 ohm, SMD Inductor, 11.3x10x10mm XAL1010-332MEB Coilcraft
L6 1 1mH Inductor, Wirewound, 1 mH, 0.2 A, 6 ohm, SMD 5.0x5.0x4.0mm 74404054102 Wurth Elektronik
L7 1 4.9uH Inductor, Shielded Drum Core, Superflux, 4.9 µH, 6.5 A, 0.0155 ohm,
SMD 6.9x4.8x6.9mm 744314490 Wurth Elektronik
L8, L9 2 60 ohm Ferrite Bead, 60 ohm @ 100 MHz, 0.5 A, 0603 0603 74279267 Wurth Elektronik
L10, L11 2 250uH Coupled inductor, 250 µH, A, 0.035 ohm, SMD 8.7x10mm 744272251 Wurth Elektronik
Q1, Q11 2 100V MOSFET, N-CH, 100 V, 3.4 A, 4.5x5x0.8mm 4.5x5x0.8mm FDMQ8203 Fairchild
Semiconductor None
Q2, Q3, Q4, Q5 4 0.2V Transistor, NPN, 40V, 0.2A, SOT-23 SOT-23 MMBT3904-7-F Diodes Inc. None None
Q6, Q18 2 300 V Transistor, NPN, 300 V, 0.1 A, SOT-23 SOT-23 MMBTA42 NXP
Semiconductor
Q7, Q8, Q9, Q10 4 0.25V Transistor, PNP, 40V, 0.2A, SOT-23 SOT-23 MMBT3906-7-F Diodes Inc. None None
Q12 1 100 V Transistor, NPN, 100 V, 1 A, SOT-89 SOT-89 FCX493TA Diodes Inc.
Q13 1 30V MOSFET, N-CH, 30V, 100A, SON 5x6mm SON 5x6mm CSD17501Q5A Texas
Instruments None
Q14 1 -150V MOSFET, P-CH, -150 V, -3 A, QFN-8 QFN-8 FDMC2523P Fairchild
Semiconductor None
Q15 1 40V MOSFET, N-CH, 40V, 100A, SON 5x6mm SON 5x6mm CSD18502Q5B Texas
Instruments None
Q16 1 150V MOSFET, N-CH, 150V, 35A, PQFN08A PQFN08A FDMS86200 Fairchild
Semiconductor None

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TPS2373-4EVM-758 Evaluation Module
Table 5. TPS237xEVM-758 BOM (continued)
Designator Qty Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
Q17 1 80 V Transistor, PNP, 80 V, 1 A, SOT-89 SOT-89 2SB1260T100R Rohm
R1, R2, R3, R4, R71, R72, R73,
R74 8 75.0 RES, 75.0 ohm, 1%, 0.1W, 0603 0603 CRCW060375R0FKEA Vishay-Dale
R5, R6, R7, R8, R14, R19, R20,
R21, R22 9 301k RES, 301k ohm, 1%, 0.1W, 0603 0603 CRCW0603301KFKEA Vishay-Dale
R9, R10, R11, R12, R15, R16,
R17, R18 8 66.5k RES, 66.5k ohm, 1%, 0.1W, 0603 0603 CRCW060366K5FKEA Vishay-Dale
R13 1 499k RES, 499k ohm, 1%, 0.1W, 0603 0603 CRCW0603499KFKEA Vishay-Dale
R23 1 237k RES, 237k ohm, 1%, 0.1W, 0603 0603 CRCW0603237KFKEA Vishay-Dale
R24 1 9.53k RES, 9.53 k, 1%, 0.1 W, 0603 0603 CRCW06039K53FKEA Vishay-Dale
R25 1 53.6k RES, 53.6 k, 1%, 0.1 W, 0603 0603 CRCW060353K6FKEA Vishay-Dale
R26, R27, R28 3 3.74k RES, 3.74 k, 1%, 0.1 W, 0603 0603 CRCW06033K74FKEA Vishay-Dale
R30 1 24.9k RES, 24.9 k, 1%, 0.1 W, 0603 0603 CRCW060324K9FKEA Vishay-Dale
R31, R37 2 63.4 RES, 63.4 ohm, 1%, 0.1W, 0603 0603 CRCW060363R4FKEA Vishay-Dale
R32, R33 2 90.9 RES, 90.9, 1%, 0.1 W, 0603 0603 CRCW060390R9FKEA Vishay-Dale
R34 1 140 RES, 140, 1%, 0.1 W, 0603 0603 CRCW0603140RFKEA Vishay-Dale
R35 1 249 RES, 249, 1%, 0.1 W, 0603 0603 CRCW0603249RFKEA Vishay-Dale
R36 1 1.21k RES, 1.21 k, 1%, 0.1 W, 0603 0603 CRCW06031K21FKEA Vishay-Dale
R38 1 1.00k RES, 1.00 k, 1%, 0.75 W, 2010 2010 CRCW20101K00FKEF Vishay-Dale
R39 1 2k TRIMMER, 2k ohm, 0.5W, TH 375x190x375mil 3386P-1-202LF Bourns
R40 1 49.9k RES, 49.9 k, 1%, 0.1 W, 0603 0603 CRCW060349K9FKEA Vishay-Dale
R41 1 511 RES, 511, 1%, 0.125 W, 0805 0805 CRCW0805511RFKEA Vishay-Dale
R42 1 10 RES, 10, 5%, 0.1 W, 0603 0603 CRCW060310R0JNEA Vishay-Dale
R43, R58, R62 3 10.0k RES, 10.0 k, 1%, 0.1 W, 0603 0603 CRCW060310K0FKEA Vishay-Dale
R44, R66 2 0 RES, 0, 5%, 0.1 W, 0603 0603 CRCW06030000Z0EA Vishay-Dale
R45 1 1.82k RES, 1.82 k, 1%, 1 W, 2512 2512 CRCW25121K82FKEG Vishay-Dale
R46, R67 2 1.00k RES, 1.00 k, 1%, 0.1 W, 0603 0603 CRCW06031K00FKEA Vishay-Dale
R47 1 0.075 RES, 0.075, 1%, 2 W, 2512 2512 CSRN2512FK75L0 Stackpole
Electronics Inc
R48 1 60.4k RES, 60.4 k, 1%, 0.1 W, 0603 0603 CRCW060360K4FKEA Vishay-Dale
R49 1 182k RES, 182 k, 1%, 0.1 W, 0603 0603 CRCW0603182KFKEA Vishay-Dale
R50 1 20k RES, 20 k, 5%, 0.1 W, 0603 0603 CRCW060320K0JNEA Vishay-Dale
R51, R56 2 100k RES, 100 k, 5%, 0.1 W, 0603 0603 CRCW0603100KJNEA Vishay-Dale
R52 1 1.18k RES, 1.18 k, 1%, 0.1 W, 0603 0603 CRCW06031K18FKEA Vishay-Dale
R53 1 12.1k RES, 12.1 k, 1%, 0.1 W, 0603 0603 CRCW060312K1FKEA Vishay-Dale
R54 1 90.9k RES, 90.9 k, 1%, 0.1 W, 0603 0603 CRCW060390K9FKEA Vishay-Dale
R55 1 50 RES, 50, 1%, 0.1 W, 0603 0603 CRCW060350R0FKEA Vishay-Dale
R57 1 665 RES, 665, 1%, 0.1 W, 0603 0603 CRCW0603665RFKEA Vishay-Dale
R59 1 7.68k RES, 7.68 k, 1%, 0.1 W, 0603 0603 RC0603FR-077K68L Yageo America
R61 1 2.00k RES, 2.00 k, 1%, 0.1 W, 0603 0603 CRCW06032K00FKEA Vishay-Dale
R63 1 20.0k RES, 20.0 k, 1%, 0.1 W, 0603 0603 CRCW060320K0FKEA Vishay-Dale

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TPS2373-4EVM-758 Evaluation Module
Table 5. TPS237xEVM-758 BOM (continued)
Designator Qty Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
R64 1 3.16k RES, 3.16 k, 1%, 0.1 W, 0603 0603 CRCW06033K16FKEA Vishay-Dale
R65 1 1.33k RES, 1.33 k, 1%, 0.1 W, 0603 0603 CRCW06031K33FKEA Vishay-Dale
R68 1 100k RES, 100 k, 1%, 0.1 W, 0603 0603 CRCW0603100KFKEA Vishay-Dale
R69 1 191k RES, 191 k, 1%, 0.1 W, 0603 0603 CRCW0603191KFKEA Vishay-Dale
R70 1 10.0k RES, 10.0 k, 1%, 0.1 W, 0603 0603 RCG060310K0FKEA Vishay Draloric
SH-J2, SH-J3, SH-J4, SH-J5,
SH-J6, SH-J7, SH-J8, SH-J9 8 1x2 Shunt, 100mil, Gold plated, Black Shunt 969102-0000-DA 3M SNT-100-BK-G Samtec
T1 1 350 uH Transformer, 350 uH, SMT 14.7x18.29mm 7490220122 Wurth Elektronik
T2 1 153uH Transformer, High Frequency Flat Coil Planar, SMT 920x910x850mil 750343164 Wurth Electronik
TP1, TP2, TP3, TP4, TP5, TP7,
TP9, TP10, TP14, TP15, TP16,
TP17, TP18, TP19, TP20, TP21,
TP22, TP23, TP24, TP25, TP26,
TP27, TP28, TP29, TP30
25 Test Point, Miniature, SMT Test Point, Miniature, SMT 5019 Keystone
TP11, TP12, TP13 3 SMT Test Point, Miniature, SMT Testpoint_Keystone_Miniat
ure 5015 Keystone
U1 1 Mid Power “bt” PoE PD Interface with “Automatic” Maintain Power
Signature, Advanced Startup and Ultra-Low Standby Power,
TPS2372RGW
TPS2372RGW TPS2373-4RGW Texas
Instruments Texas Instruments
U2 1 Advanced Active Clamp PWM Controller with Current Control, -40 to
+125 degC, 20-pin QFN (RGP), Green (RoHS & no Sb/Br) RGP0020D UCC2897ARGPR Texas Instruments Equivalent None
U3 1 Optocoupler, 3.75 kV, 80-160% CTR, SMT Mini Flat Package HMHA2801A Fairchild
Semiconductor
U4 1 LOW-VOLTAGE ADJUSTABLE PRECISION SHUNT REGULATOR,
DBZ0003A DBZ0003A TLV431AIDBZR Texas Instruments Texas Instruments
C62 0 100uF CAP, AL, 100 µF, 100 V, +/- 20%, 0.17 ohm, SMD SMT Radial J16 EEV-FK2A101M Panasonic
C63 0 1000pF CAP, CERM, 1000pF, 3kV, 1808 1808 STD STD
D1, D2, D3, D4, D5, D6, D7, D8 0 100V Diode, Schottky, 100 V, 5 A, PowerDI5 PowerDI5 PDS5100-13 Diodes Inc.
FID1, FID2, FID3 0 Fiducial mark. There is nothing to buy or mount. Fiducial N/A N/A
L1, L2, L3, L4 0 300 ohm Ferrite Bead, 300 ohm @ 100 MHz, 2 A, 0603 0603 742792641 Wurth Elektronik
Notes: Unless otherwise noted in the Alternate Part Number and/or Alternate Manufacturer columns, all parts may be substituted with equivalents.

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Revision History
Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (February 2017) to A Revision .................................................................................................. Page
• Changed TPS2373-4EVM-758 PD front-end schematic and TPS2373-4EVM-758 pd and DC/DC converter schematic... 4

STANDARD TERMS FOR EVALUATION MODULES
1. Delivery: TI delivers TI evaluation boards, kits, or modules, including any accompanying demonstration software, components, and/or
documentation which may be provided together or separately (collectively, an “EVM” or “EVMs”) to the User (“User”) in accordance
with the terms set forth herein. User's acceptance of the EVM is expressly subject to the following terms.
1.1 EVMs are intended solely for product or software developers for use in a research and development setting to facilitate feasibility
evaluation, experimentation, or scientific analysis of TI semiconductors products. EVMs have no direct function and are not
finished products. EVMs shall not be directly or indirectly assembled as a part or subassembly in any finished product. For
clarification, any software or software tools provided with the EVM (“Software”) shall not be subject to the terms and conditions
set forth herein but rather shall be subject to the applicable terms that accompany such Software
1.2 EVMs are not intended for consumer or household use. EVMs may not be sold, sublicensed, leased, rented, loaned, assigned,
or otherwise distributed for commercial purposes by Users, in whole or in part, or used in any finished product or production
system.
2Limited Warranty and Related Remedies/Disclaimers:
2.1 These terms do not apply to Software. The warranty, if any, for Software is covered in the applicable Software License
Agreement.
2.2 TI warrants that the TI EVM will conform to TI's published specifications for ninety (90) days after the date TI delivers such EVM
to User. Notwithstanding the foregoing, TI shall not be liable for a nonconforming EVM if (a) the nonconformity was caused by
neglect, misuse or mistreatment by an entity other than TI, including improper installation or testing, or for any EVMs that have
been altered or modified in any way by an entity other than TI, (b) the nonconformity resulted from User's design, specifications
or instructions for such EVMs or improper system design, or (c) User has not paid on time. Testing and other quality control
techniques are used to the extent TI deems necessary. TI does not test all parameters of each EVM.
User's claims against TI under this Section 2 are void if User fails to notify TI of any apparent defects in the EVMs within ten (10)
business days after delivery, or of any hidden defects with ten (10) business days after the defect has been detected.
2.3 TI's sole liability shall be at its option to repair or replace EVMs that fail to conform to the warranty set forth above, or credit
User's account for such EVM. TI's liability under this warranty shall be limited to EVMs that are returned during the warranty
period to the address designated by TI and that are determined by TI not to conform to such warranty. If TI elects to repair or
replace such EVM, TI shall have a reasonable time to repair such EVM or provide replacements. Repaired EVMs shall be
warranted for the remainder of the original warranty period. Replaced EVMs shall be warranted for a new full ninety (90) day
warranty period.
3Regulatory Notices:
3.1 United States
3.1.1 Notice applicable to EVMs not FCC-Approved:
FCC NOTICE: This kit is designed to allow product developers to evaluate electronic components, circuitry, or software
associated with the kit to determine whether to incorporate such items in a finished product and software developers to write
software applications for use with the end product. This kit is not a finished product and when assembled may not be resold or
otherwise marketed unless all required FCC equipment authorizations are first obtained. Operation is subject to the condition
that this product not cause harmful interference to licensed radio stations and that this product accept harmful interference.
Unless the assembled kit is designed to operate under part 15, part 18 or part 95 of this chapter, the operator of the kit must
operate under the authority of an FCC license holder or must secure an experimental authorization under part 5 of this chapter.
3.1.2 For EVMs annotated as FCC – FEDERAL COMMUNICATIONS COMMISSION Part 15 Compliant:
CAUTION
This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not
cause harmful interference, and (2) this device must accept any interference received, including interference that may cause
undesired operation.
Changes or modifications not expressly approved by the party responsible for compliance could void the user's authority to
operate the equipment.
FCC Interference Statement for Class A EVM devices
NOTE: This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of
the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is
operated in a commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not
installed and used in accordance with the instruction manual, may cause harmful interference to radio communications.
Operation of this equipment in a residential area is likely to cause harmful interference in which case the user will be required to
correct the interference at his own expense.

FCC Interference Statement for Class B EVM devices
NOTE: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of
the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential
installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance
with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference
will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which
can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more
of the following measures:
•Reorient or relocate the receiving antenna.
•Increase the separation between the equipment and receiver.
•Connect the equipment into an outlet on a circuit different from that to which the receiver is connected.
•Consult the dealer or an experienced radio/TV technician for help.
3.2 Canada
3.2.1 For EVMs issued with an Industry Canada Certificate of Conformance to RSS-210 or RSS-247
Concerning EVMs Including Radio Transmitters:
This device complies with Industry Canada license-exempt RSSs. Operation is subject to the following two conditions:
(1) this device may not cause interference, and (2) this device must accept any interference, including interference that may
cause undesired operation of the device.
Concernant les EVMs avec appareils radio:
Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio exempts de licence. L'exploitation
est autorisée aux deux conditions suivantes: (1) l'appareil ne doit pas produire de brouillage, et (2) l'utilisateur de l'appareil doit
accepter tout brouillage radioélectrique subi, même si le brouillage est susceptible d'en compromettre le fonctionnement.
Concerning EVMs Including Detachable Antennas:
Under Industry Canada regulations, this radio transmitter may only operate using an antenna of a type and maximum (or lesser)
gain approved for the transmitter by Industry Canada. To reduce potential radio interference to other users, the antenna type
and its gain should be so chosen that the equivalent isotropically radiated power (e.i.r.p.) is not more than that necessary for
successful communication. This radio transmitter has been approved by Industry Canada to operate with the antenna types
listed in the user guide with the maximum permissible gain and required antenna impedance for each antenna type indicated.
Antenna types not included in this list, having a gain greater than the maximum gain indicated for that type, are strictly prohibited
for use with this device.
Concernant les EVMs avec antennes détachables
Conformément à la réglementation d'Industrie Canada, le présent émetteur radio peut fonctionner avec une antenne d'un type et
d'un gain maximal (ou inférieur) approuvé pour l'émetteur par Industrie Canada. Dans le but de réduire les risques de brouillage
radioélectrique à l'intention des autres utilisateurs, il faut choisir le type d'antenne et son gain de sorte que la puissance isotrope
rayonnée équivalente (p.i.r.e.) ne dépasse pas l'intensité nécessaire à l'établissement d'une communication satisfaisante. Le
présent émetteur radio a été approuvé par Industrie Canada pour fonctionner avec les types d'antenne énumérés dans le
manuel d’usage et ayant un gain admissible maximal et l'impédance requise pour chaque type d'antenne. Les types d'antenne
non inclus dans cette liste, ou dont le gain est supérieur au gain maximal indiqué, sont strictement interdits pour l'exploitation de
l'émetteur
3.3 Japan
3.3.1 Notice for EVMs delivered in Japan: Please see http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_01.page 日本国内に
輸入される評価用キット、ボードについては、次のところをご覧ください。
http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_01.page
3.3.2 Notice for Users of EVMs Considered “Radio Frequency Products” in Japan: EVMs entering Japan may not be certified
by TI as conforming to Technical Regulations of Radio Law of Japan.
If User uses EVMs in Japan, not certified to Technical Regulations of Radio Law of Japan, User is required to follow the
instructions set forth by Radio Law of Japan, which includes, but is not limited to, the instructions below with respect to EVMs
(which for the avoidance of doubt are stated strictly for convenience and should be verified by User):
1. Use EVMs in a shielded room or any other test facility as defined in the notification #173 issued by Ministry of Internal
Affairs and Communications on March 28, 2006, based on Sub-section 1.1 of Article 6 of the Ministry’s Rule for
Enforcement of Radio Law of Japan,
2. Use EVMs only after User obtains the license of Test Radio Station as provided in Radio Law of Japan with respect to
EVMs, or
3. Use of EVMs only after User obtains the Technical Regulations Conformity Certification as provided in Radio Law of Japan
with respect to EVMs. Also, do not transfer EVMs, unless User gives the same notice above to the transferee. Please note
that if User does not follow the instructions above, User will be subject to penalties of Radio Law of Japan.