Kenwood Tr-7625 User manual

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Saree

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INTRODUCTION/CONTENTS

INTRODUCTION

Your

KENWOOD

Model

TR-7625

is

an

advanced

2-meter

transceiver

for

amateur

mobile,

and

optional

fixed

station

operation.

The

TR-7625

features:

x

Memory

channel

(simplex

and

repeater

mode).

ve

Memory

TX

and

+600

kHz

repeater

TX

for

repeater

operation.

sx

800

channe}!

PLL

circuit.

¢

Digital

frequency

display.

vv

Dual

concentric

frequency

selector

switches.

sx

PLL

UNLOCK

and

ON

AIR

indicators.

ve

Subaudible

ON/OFF

switch

(Encoder

user

installed).

vv

Powered

tone

pad

connector

with

9V

DC

on

one

pin.

xy

Mic

connector

with

9V

DC

on

one

pin.

sx

TX

HI-LOW

(Power)

switch.

x

Having

25W

RF

output

power.

CONTENTS

GENERAL/CIRCUIT

DESCRIPTION

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GEMIGONDUCTOR

DATA

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PC

BOARD

VIEWS

TXERX

Unit

(X44-13

20-10)

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cece

ec

eee

ee

RE

EEE

Oe

10

TONE

Unit

(XB2-1

110-81)

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ee

eee

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causes

cigae

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means

1

Control

Unit

(X54-1440-10),

Indicator,

Switch

PC

board...

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res

12

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LIST

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Unit

(XBO-1

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Unit

(X54-1440-1O)

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Unit

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BRACKET

INSTALLATION,

EXPLODED

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ADJUSTMENTS

:

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Equipment’

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PC

BOARD

ALIGNMENT

AND

TEST

POINT

LOCATIONS

PLE

Unit

(XB0-1580-4

0)

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SWITCH:

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STATIC

AWARENESS

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BACK

COVER

TR-7625

GENERAL/CIRCUIT

DESCRIPTION

GENERAL

The

TR-7625

is

a

25W.

multi-channel

(800

channels)

FM

transceiver

covering

144~

147.995

MHz.

It

features

a

built-in

repeater

shift

circuit

and

memory

circuit,

and

provision

for

connection

of

an

optional

(micro-processor)

remote

control.

PLL

CIRCUIT

BLOCK

DIAGRAM

OUTPUT

vcT

IF

TA

TOGOP,

28C460

PLL

CIRCUIT

The

TR-7625

employs

a

PLL

circuit

using

SM5111A

IC

for

programmable

counter,

reference

oscillator,

frequency

divider

and

phase

detector.

Frequency

division

ratio.

memory

and

remote

indication

functions

are

all

controlled

by

BCD

codes.

Qs

PLL

OUL

SM

SIIIA

10

ae

ty

$C1815

ORO

*

—_

x]

a

x

5

m

©

5

S

?

eo

? <

‘o

A

OS

Fig.

1

PLL

Circuit

TR-7625

CIRCUIT

DESCRIPTION

1.

Phase

Locked

Loop

The

130

MHz

signal

from

Q27

passes

through

the

buffer

circuit

Q28

and

is

then

divided

into

a

synthesizer

output

by

Q11

and

a

loop

output

by

Q12

respectively.

The

output

from

Q12

is

mixed

with

the

local

oscillator

output,

tripled

by

Q6,

D21

and

Q20

to

obtain

IF

frequency.

The

IF

output

is

amplified

by

Q19

and

is

fed

to

Q15

where

the

output

is

frequency

divided

as

specified

by

the

BCD

code

and

compared

with

the

10

kHz

reference

frequency

(1/1024

of

10,240

MHz)

The

DC

output

thus

obtained

passes

through

the

low-pass

filter

to

control

the

VCO

vari-cap

diode

182208

D26.

The

output

from

Q26

controls

the

transmit

frequency

bandwidth.

When

the

signal

is

un-

locked,

output

is

shut

off

by

Q17

and

indicated

by

Q18.

Q16

shuts

off

output

when

the

rotary

switch

is

between

channel

setting

positions.

Rx

Tx

Freq.

|

Simplex

Output

Osc

Xtal

Freq.

IF

Freq.

144.00

MHz

133.3

MHz

43.7667

MHz

2

MHz

134.3

MHz

3

MHz

43.7667

MHz

145.00

MHz

145.99

MHz}

135.29

MHz

399

43.7667

MHz

3.99

MHz

135.3

MHz

200

44.4333

MHz

2

MHz

146.00

MHz

44.4333

MHz

3

MHz

147.00

MHz

136.3

MHz

137.29

MHz

44.4333

MHz

3.99

MHz

147.99

MHz

Table

1

Division

and

Frequency

2.

+5

kHz

Circuit

In

the

PLL

circuit,

the

reference

frequency

is

controlled

in

10

kHz

steps.

The

+5

kHz

signal

is

controlled

by

varying

the

local

oscillator

crystal

frequency

vari-cap

diode,

so

the

frequency

division

remains

unchanged

even

when

the

+5

kHz

circuit

is

operated.

The

memory

circuit

also

includes

the

same

bit

and

func-

tions

even

when

the

+5

kHz

circuit

is

operating.

3.

Shift

Circuit

Transmit

frequencies

can

be

shifted

by

changing

the

local

oscillator

crystal

frequency,

as

shown

below.

144

and

145

MHz

bands:

[—]

shift

43.5667

MHz

(S]

43.7667

MHz

The

[+]

shift

is

not

available

for

144

and

145

MHz

bands,

[S]

occurs

at

the

[+]

position.

146

and

147

MHz

Bands:

[—]

shift

44.2333

MHz

[+]

shift

44.6333

MHz

(s]

44,4333

MHz

4.

Memory

Shift

Circuit

The

memory

shift

(M)

is

a

circuit

to

shift

to

the

memory

frequency

during

transmission.

CONTROL

UNIT

Frequency

settings

are

accomplished

by

the

MHz,

100

kHz

and

10

kHz

rotary

switches.

The

relationship

between

the

frequency

and

frequency

division

is

shown

below.

Frequency

division

144,000

MHz

200

145.000

MHz

300

145.990

MHz

399

146.000

MHz

200

147.000

MHz

300

147.990

MHz

399

The

local

oscillator

kHz

order

frequency

can

be

(switch)

shifted.

Frequency

division,

set

by

the

rotary

switch,

is

stored

in

the

latch

IC’s

1,

2

and

3

by

pressing

the

memory

input

switch.

The

output

from

the

latch

circuit

is

fed

through

.IC’s

4,5

and

6

in

the

selector

circuit

to

the

PLL

circuit

by

pressing

the

memory

call

switch.

When

this

switch

is

not

pressed,

the

output

is

fed

directly

to

the

PLL

circuit.

Memory

function

Is

effected

by

latching

each

switch:

The

information

from

each

switch

is

stored

by

pressing

the

memory

switch.

The

stored

information

remains

the

same

unless

the

memory

switch

is

pressed

once

again.

Selection

of

memory

output

and

rotary

output

is

accomplished

by

the

selector

circuit.

A

latched

output

is

obtained

by

pressing

the

memory

output

switch.

The

signal

to

the

PLL

circuit

passes

through

the

LED

driver

circuit

and

is

digitally

indicated

by

LED.

baton

164035

BP

x3

MEMORY

swiTCH

SELECTOR

Te

4019

OF

SYNTHESIZE

BCO

CORD

OUTPUT

O

MEMORY

OUTPUT

Fig.

2

Block

Diagram

of

Frequency

Memory

Circuit

©

ROTARY

Switch

ovrpur

*

TR-7625

CIRCUIT

DESCRIPTION

TRANSMITTER

UNIT

The

microphone

signal

passes

through

the

limiter

amplifier

and

FM

modulates

the

10.7

MHz

oscillator.

This

is

mixed

with

the

loca!

oscillator

signal

to

obtain

114

~

146

MHz

sig-

nal.

The

(variable)

B.P.F.

provides

excellent

power

and

spu-

LT

+8

rious

characteristics

by

the

use

of

VCO

voltage.

The

RF

power

stage

uses

an

M57712H

power

module

manufac-

tured

by

the

Mitsubishi

Electric

Co..

providing

high

reliability.

RI5

1S

2208

O

TO

RF

AMP

FROM

VCT

Fig.

3

Variable

Transmitter

Band

Pass

Filter

Circuit

RECEIVER

UNIT

The

signal

from

the

transmit/receive

matching

circuit

passes

through

the

diode

switch

and

is

fed

to

the

2-stage

antenna

tuning

circuit,

3-stage

herical

tuning

circuit

and

(MOS

FET}

RF

amplifier.

This

signal

is

further

fed

to

the

mixer

MOS

FET

where

it

ig

converted

to

a

10.7

MHz

signal.

The

signal

thus

converted

passes

through

the

2-stage

filter

and

is

fed

to

the

2nd

mixer

where

it

is

converted

to

a

455

kHz

signal.

The 2nd

iF

signal

from

the

455

kHz

ceramic

filter

passes

through

the

limiter

circuit

where

it

is

converted

to

an

AF

signal

by

the

ceramic

discriminator.

This

signal

is

amplified

by

the

audio

power

amplifier

to

drive

the

speaker.

The

receiver

unit

includes

a

noise

amplification

type

squelch

circuit.

This

circuit

picks

up

the

noise

component

in

the

squelch

signal

from

the

discriminator

which

is

amplified

and

rectified

to

contro!

the

1st

stage

AF

amplifier.

The

characteristic

of

the

discriminator

is

opposite

that

of

conventional

ones

to

permit

connection

of

a

remote

control.

DC+

DC

-

Fig.

4

Discriminator

Characteristics

TR-7625

SPECIAL

SEMICONDUCTOR

DATA

CAUTION

SM5111A

Electrostatic

Breakdown

Protection

This

item

contains

built-in

input

protection

circuit

to

prevent

a

gate

breakdown

due

to

normal

ambient

static

presence

to

protect

the

input

circuit

from

damage

due

to

high

static

or,

voltage

(in

excess

of

permissible

circuit

limit),

the

following

points

must

be

observed:

1.

When

the

product

is

not

in

use,

keep

all

terminals

in

contact

with

insulating

material

(this

is

done

at

the

factory

prior

to

shipment).

2.

Soldering

iron,

testing

instruments

and

other

tools

should

be

grounded

while

in

use.

3.

Do

not

insert

or

remove

IC

from

the

socket

without

tur-

ning

off

the

power.

4.

Do

not

apply

signal

voltage

to

the

input

terminal

when

power

is

OFF.

5.

Do

not

apply

a

voltage

exceeding

the

power

voltage

to

the

input

terminal.

OPERATING

SYSTEM

This

product

has

been

developed

with

C

MOS

LSI

used

for

PLL

circuit.

As

shown

in

the

block

diagram

in

Fig.

1,

it

consists

of

OSC:

reference

oscillator

circuit,

DIVIDER:

reference

fre-

quency

dividing

circuit,

PC:

programmable

counter,

PD:

phase

comparator,

and

INV:

inverter.

A

high

accuracy

feed-

back

type

crystal

oscillator

circuit

can

be

formed

by

adding

a

crystal

oscillating

element.

resistor

and

capacitor

between

the

Qin

and

Qout

terminals

of

the

reference

oscillator

circuit.

This

also

permits

an

external

signal

to

be

fed

to

the

Qin

terminal.

The

oscillator

output

is

applied

to

the

reference

frequency

dividing

circuit

where

it

is

divided

into

the

desired

frequen-

cies

of

fr1

(1/2048)

and

fr2

(1/1024)

which

are

the

reference

signals

for

the

digital

phase

comparator

in

the

The

comparison

signal

(frequency

f1)

fed

to

the

input

ter-

minal

FIN

of

the

AMP

is

amplified

and

wave

shaped,

then

fed

to

the

input

of

the

programmable

counter.

The

frequency

“{1"

is

frequency

converted

(fpc)

through

the

program

ter-

minals

PO1

...

P33

(for

example,

when

PQ1

...

P33

=

1,

the

programmable

counter

output

is

1/999),

and

is

fed

to

the

phase

comparator

where

it

is

compared

with

the

reference

signal

in

phase

so

that

a

pulse

signal,

shown

below,

proportional

to

the

phase

difference

between

the

two

signal

is

fed

to

the

output

terminal

DO.

fpc

Pt

LY

Do

_Lu

Hing

eee

eer

Bak

ee

DR

qor-

uJ

Fig.

5

The

table

below

shows

the

maximum

operation

limit

and

en-

vironmental

conditions.

If

any

of

these

values

exceeds

the

given

limits,

it

can

be

cause

of

damage

to

the

product

or

deterioration

of

quality.

Item

Symbol

Power

Supply

Voltage

Vop

-Vss

Input

Voltage

Operating

Temperature

TA

—30~

+70

Storage

Temperature

TsTG

—40

~

+125

Power

Consumption

Po

Soldering

Temperature

Soldering

Time

Table

2

SM5111A

Absolute

Maximum

Ratings

TOP

VIEW

VDD

Pio

FIN

P11

QiN

P12

QoutT

P13

Do

g

P20

amPIN

[6

=

Pat

AMP

ouT|7|

=

P22

FR2

P23

FR

1

P30

F12

IN

P31

Lb

P32

VoD

P33

DATE

CODE

Fig.6

SM5111A

Outline

3SK74

TR-7625

SPECIAL

SEMICONDUCTOR

DATA

SPECIFICATIONS

Application

VHF

RF

Amplifier

{Mixer}

Construction

N-Channel

*

MOS

FET

(Dual

Gate)

Drain

+

Source

Voltage

Vosx

20V

Gate

1»

Source

Voltage

Veis

+10V

Gate

2

+

Source

Voltage

Veos

+10V

Drain

Current

25

mA

Allowable

Loss

200

mw

Channel

Temperature

125°C

Storage

Temperature

Maximum

Specifications

—5.6

~

+125°C

TEST

CONDITION

Item

Condition

Drain

»

Source

Voltage

Vois=

—

3V,

Vo2s=

3V,

lo=

500nA

Orain

Current

Vos=

6V,

Vois=

0,

Vo2zs=3V

Cut-Off

Voltage

(Gate

1)

Vos=

6V,

Va2s=0.

to=

500nA

Cut-Off

Voltage

(Gate

2)

Vos=

6V.

Ve1s=0,

lo=

500nA

Gate

Leak

Current

(Gate

1)

Vos=0,

Vois=+10V,

Vais=0

Gate

Leak

Current

(Gate

2)

Vos=0.

Vois=0,

Vezs=

+

10V

Smail

Signal

Transfer

Admittance

Vos=6V.

Vo2s=

3V,

1o=10mA,

f=

1

0

kHz

Smali

Signat

Input

Capacity

Vos=

6V.

Vc2s

=

3V,

jlo=

10mA,

f=

1.0

MHz

Small

Signai

Output

Capacity

Vos=6V.

Vozs=

3V,

lo=10mA,

f=

1.0

MHz

Small

Signal

Feedback

Capacity

Vos=

BV.

Vaas=3V,

lo=

10mA.

f=

1.0

MHz

Output

Power

Gain

Voo=

10V,

lo=

10mA,

f=

200

MHz

Noise

Figure

Item

Symbol

Voo=

10V,

lo=

10mA,

f=

200

MHz

Maximum

Rating

of

M57712H

(TA

=

25°C.

unless

otherwise

noted)

Condition

Operating

Voltage

oc

Current

Operating

Temperature

—30~

+110

Storage

—40~

+110

°C

Electrical

Characteristic

of

M57712H

(TA

=

25°C

unless

otherwise

noted)

Condition

Output

Power

f=

144~

148

MHz,

Vec=

12V

Pin=0.15W,

Z6=Zt=

500

Total

Efficiency

2nd

Harmonic

Radiation

Greater

than

3rd

Harmonic

Radiation

f=144~

148

MHz,

Vcc=

12V

Pin=0.15W,

Zg=Zt=

500

f=144~

148

MHz,

Vec=12V

Pin=0.15W,

Z6=Zi=

502

f=

144~

148

MHz,

Vcc=

12V

Pin=0.15W,

Za=ZL=

500

f=

144~

148

MHz,

Vcc=12V

‘|

Pin=0.15W,

Z6=Z.=

502

f=

144~

148

MHz,

Vec=

12V

Pin=0.15W,

Zo

=ZL=

502

Impedance

Note

GATE

2

DRAIN

SOURCE

Fig.

7

3SK74

Outline

APpwn>

Input

Terminal

(RFI)

Power

Supply

of

Drive

Stage

(DRB)

Power

Supply

of

Output

Stage

(F1B)

Output

Terminal

(RFQ)

GND

Fig.

8

M57712H

Outline

Knob

(SQU)

ey

feo

Front

Glass

S-Meter

Push

Knob

(K21-0724-04)

(B

10-061

5-04)

(B31-0616-05)

(K29-0712-04)

|

atic

R

ni

Knob

(VOL)

(K23-0717-04)

‘Push

Knob

(K29-07

13-04)

%:

ae

SS

Ri

goes

Mating

Connector

(EO07-0551-05)

(K)

5P

Metal

Socket

(EO6-0552-05)

(K)

4P

Metal

Socket

Knob

(Mode)

(K21-0731-03)

(K)

oy

oc

yh

(K21-0741-03)

(W.7)

|

b(B}

Push

knob

Power

switch

03)

(K29-0713-04)

($36-2402-05)

M-Type

Receptacie

Heat

Sink

(E04-0152-05)

(FO1-0731-05)

2P

Connector

24P

Connector

(EQ6-0252-05)

(E08-247

1-05)

vy

(EO9-247

1-05)

(E11-0003-15)

4P

Socket

(EC8-047

1-05)

(K)

sx

(EO9-047

1-05)

(K)

Mating

Connector

Slide

Switch

($31-1402-05)

TOP

VIEW

TONE

Unit

RE

Pawer

Module

(X52-1110-51)

{T)

TX-RX

Unit

(X52-1110-62)

(W)

(X44-1320-10)

Low

Power

Adj.

Protection

Adj

RF-Meter

Adj

Control

Unit

(X54-1440-10)

(K)}

(X54-1440-6

1)

(W),

(7)

Pon

(X50-

1580-10)

(K)

(X50-

1580-61)

(W),

(T)

C4

‘TATOSIAP

Q18~

22,2829

Din~S,

1$2208

D23

:XZ-

088

Q2,3,10~17

'2SCIBIS(Y)

_D6,!3~16,21,

24,26,

28,31,32

91S1555

D25

:

WZ-100

>25C460(B)

Q23,24

:28C496(Y)

D7

“M1402

D27

:

XZ-064

04,5.

:28K19(GR)

Q28

<2SA1015(Y)

De

"182588

D28

:

1$1555

Q6,8,9

38K

74(L)

Q27

-28Ci959(Y)

09,11,

12,17,

18,19,

20

<iN6O

p29:

CROZAM-2-1

Q7

:

2502538

Q26.

:28A496(Y)

D22z

$1212

DIO

:

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2SA1015(Y)

2SA4961Y)

28C458(8)

2$C1815(Y}

2SC496(Y)

2SK19(GR)

2$C460(B)

2SC1959Y)

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°

4

=

SS

SSS

~

G

S35

2SD235(Y)

3SK74(L)

280253

8

M57712H

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10

Kenwood TR-7625 User manual

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