Mitsubishi Electric PSSxxMC1Fx User manual

Publication Date: September 2016 1
<Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series APPLICATION NOTE
PSSxxMC1Fx, PSSxxNC1Fx
Table of contents
CHAPTER 1 : INTRODUCTION...............................................................................................................................2
1.1 Feature of DIPIPM+.....................................................................................................................................................................................2
1.2 Functions.....................................................................................................................................................................................................3
1.3 Applications.................................................................................................................................................................................................3
1.4 Line-up........................................................................................................................................................................................................4
CHAPTER 2 : SPECIFICATIONS and CHARACTERISTICS.................................................................................5
2.1 Specification of DIPIPM+.............................................................................................................................................................................5
2.1.1 Maximum ratings...........................................................................................................................................................................................................................5
2.1.2 Thermal Resistance ......................................................................................................................................................................................................................8
2.1.3 Electric Characteristics and Recommended Conditions...............................................................................................................................................................9
2.1.4 Mechanical characteristics and specifications............................................................................................................................................................................13
2.2 Protection functions and operating sequence ............................................................................................................................................14
2.2.1 Short circuit protection.................................................................................................................................................................................................................14
2.2.2 Control Supply UV Protection .....................................................................................................................................................................................................16
2.2.3 Temperature output function VOT ................................................................................................................................................................................................19
2.3 Package outline of DIPIPM+......................................................................................................................................................................21
2.3.1 Package outline...........................................................................................................................................................................................................................21
2.3.2 Marking........................................................................................................................................................................................................................................22
2.3.3 Terminal Description ...................................................................................................................................................................................................................23
2.4 Mounting Method.......................................................................................................................................................................................26
2.4.1 Electric Spacing of DIPIPM+.......................................................................................................................................................................................................26
2.4.2 Mounting Method and Precautions.............................................................................................................................................................................................26
2.4.3 Soldering Conditions ...................................................................................................................................................................................................................28
CHAPTER 3 : SYSTEM APPLICATION GUIDANCE............................................................................................29
3.1 Application guidance .................................................................................................................................................................................29
3.1.1 System connection......................................................................................................................................................................................................................29
3.1.2 Interface Circuit (Direct Coupling Interface example for using one shunt resistor)....................................................................................................................30
3.1.3 Interface circuit (example of opto-coupler isolated interface).....................................................................................................................................................32
3.1.4 External SC protection circuit with using three shunt resistors...................................................................................................................................................33
3.1.5 Circuits of Signal Input Terminals and Fo Terminal....................................................................................................................................................................33
3.1.6 Snubber circuit ............................................................................................................................................................................................................................35
3.1.7 Recommended wiring method around shunt resistor.................................................................................................................................................................36
3.1.8 SOA of DIPIPM+ at switching state ............................................................................................................................................................................................38
3.1.9 SCSOA........................................................................................................................................................................................................................................39
3.1.10 Power Life Cycles......................................................................................................................................................................................................................40
3.2 Power loss and thermal dissipation calculation..........................................................................................................................................41
3.2.1 Power loss calculation.................................................................................................................................................................................................................41
3.2.2 DIPIPM+ performance according to carreir frequency ...............................................................................................................................................................43
3.3 Noise and ESD withstand capability...........................................................................................................................................................45
3.3.1 Evaluation circuit of noise withstand capability...........................................................................................................................................................................45
3.3.2 Countermeasures and precautions.............................................................................................................................................................................................46
3.3.3 Static electricity withstand capability...........................................................................................................................................................................................47
CHAPTER 4 : Bootstrap Circuit Operation.........................................................................................................48
4.1 Bootstrap Circuit Operation........................................................................................................................................................................48
4.2 Bootstrap supply circuit current at switching state......................................................................................................................................49
4.3 Note for designing the bootstrap circuit......................................................................................................................................................51
4.4 Initial charging in bootstrap circuit..............................................................................................................................................................52
CHAPTER 5 : PACKAGE HANDLING ..................................................................................................................53
5.1 Packaging Specification.............................................................................................................................................................................53
5.2 Handling Precautions.................................................................................................................................................................................54

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 2
CHAPTER 1 : INTRODUCTION
1.1 Feature of DIPIPM+
DIPIPM+ series is our latest transfer molding CIB type IPM(CIB: Converter Inverter Brake, IPM: Intelligent
Power Module). It integrates the inverter, converter and brake parts to make up a compact inverter systems for
commercial and industrial inverter application like commercial air conditioner, servo and general purpose inverter.
We also offers DIPIPM+ without brake type.
General DIPIPM integrates a inverter part only, but recent market demand requires highly integrated IPM
products including more functions and peripheral circuits. So we realized this All-in-One DIPIPM, “DIPIPM+”.
DIPIPM+ series is well designed transfer molding package from our long term histroy as the pioneer.
DIPIPM+ integrates main compornents for inverter circuit and it will contribute to reduce total cost by smaller
mounting area for inverter circuit, shorter designing time and more reasonable assembly cost. It employs
low-voltage (LV) and high voltage (HV) control ICs and their corresponding bootstrap circuit for IGBT driving and
protection, as same as general DIPIPM series. So DIPIPM+ series enable same system design for its inverter part
like general DIPIPM series.
By adopting same structure of heat radiation as Large DIPIPM series which has high thermal conductivity, it is
possible to design system with high reliability.
Main features of this series are described as follows;
・ Newly optimized CSTBT are integrated for improving performance
・ 1200V series covers from 5A to 35A and 600V has 50A rating product, DIPIPM+ has wide lineup
・ Easy to design a PCB pattern wiring by smart terminal layout.
・ Incorporating bootstrap diode(BSD) with current limiting resistor for P-side gate driving supply
・ Easy to use temperature output function of the sensor integrated on control IC
Fig.1-1 shows package photograph and Fig.1-2 shows the cross-sectional structure.
Fig.1-1. Package photograph
図
1-2
Cross-sectional structure
Molding resin
Aluminum heatsink
Insulation sheet
IGBT
IC
FWDi
Aluminum wire
Gold wire
Copper frame
BSD

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DIPIPM+ Series Application note
Publication Date: September 2016 3
1.2 Functions
Inverter block
●For P-side IGBT
- Drive circuit
- High voltage level shift circuit
- Control supply under voltage (UV)
lockout circuit (without fault signal output)
- Built-in bootstrap diode (BSD)
with current limiting resistor
●For N-side IGBTs:
- Drive circuit;
- Short circuit (SC) protection circuit
- Control supply under voltage (UV)
lockout circuit (with fault signal output)
- Outputting LVIC temperature by analog signal
(No self over temperature protection)
(note) about SC protection
By detecting voltage of external shunt resistor,
DIPIPM+ works to protect.
●Fault signal output
- Corresponding to N-side IGBT SC protection
and N-side UV protection.
Brake block
●For IGBT
- Drive circuit
- UV protection circuit without fault signal
Common items
●IGBT drive supply
- Single DC15V power supply
●Control input supply
- High active logic with 5V
●UL recognized
- UL1557 File E323585
Fig. 1-3 Internal circuit block diagram for
DIPIPM+ with Brake circuit
1.3 Applications
Motor drives for low power industrial equipment and commercial equipment such as air conditioners
U
N
V
N
WN
Fo
V
N1
VVFB
VP
VWFB
W
P
UP
V
NC
CIN
P
U
V
W
NW
V
P1
LVIC
VUFB
NV
NU
V
OT
HVIC
P1
R
S
T
N1
B
N(B)
AIN
VNC
LVIC
VP1
V
UFS
VVFS
VWFS
CFo

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 4
1.4 Line-up
Line-ups are described as following table 1-1. and 1-2.
Table 1-1. DIPIPM+ with Brake circuit
Type name
Rated current
Rated voltage
Motor ratings (note1)
Brake
Isolation voltage
PSS05MC1FT
5A
1200V
0.75kW/440VAC
Yes 2500Vrms(note2)
PSS10MC1FT
10A
1.5kW/440VAC
PSS15MC1FT
15A
2.2kW/440VAC
PSS25MC1FT
25A
3.7kW/440VAC
PSS35MC1FT
35A
5.5kW/440VAC
PSS50MC1F6
50A
600V
3.7kW/220VAC
Table 1-1. DIPIPM+ without Brake circuit
Type name
Rated current
Rated voltage
Motor ratings (note1)
Brake
Isolation voltage
PSS05NC1FT
5A
1200V
0.75kW/440VAC
No 2500Vrms(note2)
PSS10NC1FT
10A
1.5kW/440VAC
PSS15NC1FT
15A
2.2kW/440VAC
PSS25NC1FT
25A
3.7kW/440VAC
PSS35NC1FT
35A
5.5kW/440VAC
PSS50NC1F6
50A
600V
3.7kW/220VAC
(note 1)
The motor ratings are described for industrial and general motor capability, and actual ratings are different
with application condition.
(note 2)
Isolation voltage is tested under the condition of which all terminals are connected with conductive
material and DIPIPM+ is applied 60Hz sinusoidal voltage between the terminals and heatsink for 1minute.

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 5
CHAPTER 2 : SPECIFICATIONS and CHARACTERISTICS
2.1 Specification of DIPIPM+
It is representatively described as follows with PSS25MC1FT (25A/1200V,CIB type).
For the other products, please refer each data sheets in details.
2.1.1 Maximum ratings
Maximum ratings are described as following table 2-1-1. (Tj= 25°C, unless otherwise noted)
Table 2-1-1 Maximum rating of PSS25MC1FT (25A/1200V,CIB type)
MAXIMUM RATINGS (Tj= 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VCC
Supply voltage
Applied between P-NU,NV,NW
900
V
VCC(surge)
Supply voltage (surge)
Applied between P-NU,NV,NW
1000
V
VCES
Collector-emitter voltage
1200
V
±IC
Each IGBT collector current
TC= 25°C
(Note 1)
25
A
±ICP
Each IGBT collector current (peak)
TC= 25°C,less than 1ms
50
A
T
j
Junction temperature
-30~+150
°C
BRAKE PART
Symbol
Parameter
Condition
Ratings
Unit
V
CC
Supply voltage
Applied between P-N(B)
900
V
VCC(surge)
Supply voltage (surge)
Applied between P-N(B)
1000
V
VCES
Collector-emitter voltage
1200
V
IC
Each IGBT collector current
TC= 25°C
(Note 1)
15
A
ICP
Each IGBT collector current (peak)
TC= 25°C,less than 1ms
30
A
VRRM
Repetitive peak reverse voltage
1200
V
I
F
Forward current
T
C
= 25°C
15
A
IFP Forward current (peak) 30 A
TjJunction temperature -30~+150 °C
CONVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VRRM
Repetitive peak reverse voltage
1600 V
Io
DC output current
3-phase full wave rectification
25
A
IFSM
Surge forward current
Peak value of half cycle at 60Hz, Non-repetitive
315
A
I2t
I2t capability
Value for 1 cycle of surge current
416
A2s
Tj
Junction temperature
-30~+150
°C
CONTROL (PROTECTION) PART
Symbol
Parameter
Condition
Ratings
Unit
VD
Control supply voltage
Applied between
VP1-VNC, VN1-VNC
20
V
V
DB
Control supply voltage
Applied between
V
UFB
-V
UFS
, V
VFB
-V
VFS
, V
WFB
-V
WFS
20
V
V
IN
Input voltage
Applied between
U
P
,V
P
,W
P
,U
N
, V
N
, W
N
, AIN-V
NC
-0.5~V
D
+0.5
V
VFO Fault output supply voltage Applied between
F
O-VNC -0.5~VD+0.5 V
IFO Fault output current Sink current at FOterminal 5 mA
V
SC
Current sensing input voltage
Applied between CIN-V
NC
-0.5~V
D
+0.5
V
Note1: Pulse width and period are limited due to junction temperature.
(1)
(2)
(3)
(4)
(5)
(5)
(5)

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 6
TOTAL SYSTEM
Symbol
Parameter
Condition
Ratings
Unit
VCC(PROT)
Self protection supply voltage limit
(Short circuit protection capability)
V
D
= 13.5~16.5V, Inverter Part
Tj= 125°C, non-repetitive, less than 2μs
800 V
TC
Module case operation temperature
(Note 2)
-30~+110
°C
Tstg
Storage temperature
-40~+125
°C
Viso Isolation voltage
60Hz, Sinusoidal, AC 1min, between connected all
pins and heat sink plate
2500 Vrms
Note2: Measurement point of Tc is described in below figure. (8)
No.
Symbol
Description
(1) VCC The maximum voltage can be biased between P-N. A voltage suppressing circuit such as a
brake circuit is necessary if P-N voltage exceeds this value.
(2) VCC(surge)
The maximum P-N surge voltage in switching status. If P-N voltage exceeds this voltage, a
snubber circuit is necessary to absorb the surge under this voltage.
(3)
VCES
The maximum sustained collector-emitter voltage of built-in IGBT and FWDi.
(4) +/- ICThe allowable continuous current flowing at collect electrode (Tc=25°C) Pulse width and period
are limited due to junction temperature.
(5) Tj
The maximum junction temperature rating is 150°C. But for safe operation, it is recommended
to limit the average junction temperature up to 125°C (at Tc is less than 100℃). Repetitive
temperature variation ΔTj affects the life time of power cycle, so please refer life time curves
for safety design.
(6) VCC(PROT)
The maximum supply voltage for turning off IGBT safely in the case of an SC or OC faults.
The power chip might not be protected and break down in the case that the supply voltage is
higher than this specification.
(7) Viso
Isolation voltage is the withstanding voltage between
all terminals connected with conductive
material and heatsink of heat radiation.
(8) Tc position Tc (case temperature) is defined to be the temperature just beneath the specified power chip.
Please mount a thermocouple on the heat sink surface at the defined position to get accurate
temperature
information. Due to the control schemes such different control between P and
N-side, there is the possibility that highest Tc point is different from above point. In such cases, it
is necessary to change the measuring point to that under the highest power chip.
Tc point
IGBT chip
Heat radiation
surface
6.4mm
19.6mm
Control terminals
Power terminals
(7)
(6)

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DIPIPM+ Series Application note
Publication Date: September 2016 7
Power chips layout
Fig.2-1-1 indicates the position of the each power chips. (This figure is the view from laser marked side.)
In case of PSSxxNC1Fx, Br-IGBT and Br-Di are not built-in.
Fig. 2-1-1 Power chips layout (Unit : mm)
INV-IGBT x 6
INV-Di x 6
Br UP VP
WP UN VN WN
Br-Di
CONV-Di x 3
CONV-Di x 3
RP SP TP
RN SN TN
Tc position
Br-IGBT
Reference point of
location

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 8
2.1.2 Thermal Resistance
Table 2-1-2 shows the thermal resistance between its chip junction and case.
Table 2-1-2. Thermal resistance of PSS25MC1FT (25A/1200V, CIB type)
Symbol Parameter Condition
Limits
Unit
Min.
Typ.
Max.
R
th(j-c)Q
Junction to case thermal
resistance (Note 3)
Inverter IGBT part (per 1/6 module)
-
-
1.15
K/W
Rth(j-c)F
Inverter FWD part (per 1/6 module)
-
-
1.65
Rth(j-c)Q
Brake IGBT part (per 1module)
-
-
1.45
R
th(j-c)F
Brake Di part (per 1module)
-
-
1.65
R
th(j-c)R
Converter part (per 1/6module)
-
-
1.10
Note 3: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~
+200μm on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM
case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease.
For reference, Rth(c-f) is about 0.25K/W (per 1chip, grease thickness: 20μm, thermal conductivity: 1.0W/m•K).
The above data shows static state thermal resistance. The thermal resistance goes into saturation in about 10
seconds. The unsaturated thermal resistance is called as transient thermal impedance which is shown in
Fig.2-1-2. Zth(j-c)* is the normalized transient thermal impedance and formulation is described as Zth(j-c)*=
Zth(j-c) / Rth(j-c)max. For example, the IGBT transient thermal impedance at 0.2s is 1.15×0.7=0.81K/W. The
transient thermal impedance isn’t used for constantly current, but for short period current as millisecond order.
(e.g. motor starting, motor lock･･･e.t.c)
0.01
0.10
1.00
0.001 0.01 0.1 1
Normalized transient
thermal impedance Zth(j-c)*
Time (s)
Fig. 2-1-2. Normalized transient thermal impedance

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 9
2.1.3 Electric Characteristics and Recommended Conditions
Table 2-1-3 shows the typical static characteristics and switching characteristics. (Tj= 25°C, unless otherwise noted)
Table 2-1-3 Static characteristics and switching characteristics of PSS25MC1FT(25A/1200V, CIB type)
ELECTRICAL CHARACTERISTICS (Tj= 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Limits Unit
Min. Typ. Max.
VCE(sat) Collector-emitter saturation
voltage VD=VDB = 15V, VIN= 5V
IC= 25A, Tj= 25°C
-
1.50
2.20
V
IC= 25A, Tj= 125°C
-
1.80
2.45
VEC
FWDi forward voltage
VIN= 0V, -IC= 25A
-
2.40
3.10
V
t
on
Switching times VCC= 600V, VD= VDB= 15V
IC= 25A, Tj= 125°C, VIN= 0↔5V
Inductive Load (upper-lower arm)
1.10
1.90
2.60
μs
tC(on)
-
0.60
0.90
μs
toff
-
2.80
3.80
μs
tC(off)
-
0.50
0.90
μs
t
rr
-
0.60
-
μs
ICES Collector-emitter cut-off
current VCE=VCES
Tj= 25°C
-
-
1
mA
Tj= 125°C
-
-
10
BRAKE PART
Symbol Parameter Condition Limits Unit
Min. Typ. Max.
VCE(sat) Collector-emitter saturation
voltage VD=VDB = 15V, VIN= 5V
IC= 15A, Tj= 25°C
-
1.50
2.20
V
IC= 15A, Tj= 125°C
-
1.80
2.45
VF
Di forward voltage
VIN= 0V, IF= 15A
-
2.20
2.80
V
ton
Switching times VCC= 600V, VD= VDB= 15V
IC= 15A, Tj= 125°C, VIN= 0↔5V,Inductive Load
1.10
1.90
2.60
μs
tC(on)
-
0.65
1.00
μs
toff
-
2.60
3.60
μs
tC(off)
-
0.40
0.95
μs
trr
-
0.65
-
μs
ICES Collector-emitter cut-off
current VCE=VCES
Tj= 25°C
-
-
1
mA
Tj= 125°C
-
-
10
CONVERTER PART
Symbol Parameter Condition
Limits
Unit
Min. Typ. Max.
IRRM
Repetitive reverse current
VR=VRRM, Tj=125°C −
−
7.0 mA
VF
Forward voltage drop
IF=25A − 1.1 1.4 V

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 10
Definition of switching time and performance test topology are shown in Fig.2-1-3 and 2-1-4.
Switching characteristics are measured by half bridge circuit with inductance load.
Fig. 2-1-3 Switching time definition Fig. 2-1-4 Evaluation circuit (inductive load)
TURN OFF TURN ON
Fig. 2-1-5 Typical switching waveform for PSS25MC1FT (25A/1200V) inverter part
Condition：VCC=600V, VD=VDB=15V, Ic=25A, Tj=125°C, inductive load half bridge circuit
trr
Irr
tc(on)
10%
10%
10%
10%
90%
90%
td(on)
tc(off)
td(off)
tf
tr
( ton=td(on)+tr )
( toff=td(off)+tf )
Ic
VCE
VCIN
P-side SW
Input signal
N-side SW
Input signal
V
IN
(5V⇔0V)
VD
VCC
IN
GND
CIN
LO
VCC
IN
VB
V
S
HO
UP,VP,WP
UN,VN,WN
VNC
VUFB,VVFB,VWFB
VN1
CIN
COM
VP1
P
U,V,W
Ic
VCC
N-side
P-side
VDB
NU,NV,
NW
VUFS,VVFS,VWFS
L load
L load
time:500nsec/div.
V
CE
:200V/div.
I
c
:10A/div.
time:500nsec/div.
V
CE
:200V/div.
I
c
:10A/div.

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 11
Table 2-1-4 shows the typical control part characteristics. (Tj= 25°C, unless otherwise noted)
Table 2-1-4. Typical control part characteristics of PSS25MC1FT(25A/1200V, CIB type)
CONTROL (PROTECTION) PART
Symbol Parameter Condition Limits Unit
Min.
Typ.
Max.
IDCircuit current Total of VP1-VNC, VN1-VNC
V
D
=15V, V
IN
=0V
-
-
5.70
mA
V
D
=15V, V
IN
=5V
-
-
5.70
IDB Each part of VUFB-VUFS,
VVFB-VVFS, VWFB-VWFS VD=VDB=15V, VIN=0V - - 0.55
VD=VDB=15V, VIN=5V - - 0.55
VSC(ref)
Short circuit trip level
VD= 15V
(Note 4)
0.455
0.480
0.505
V
UVDBt
Control supply under-voltage
protection(UV) for P-side of
inverter part
Trip level
10.0
-
12.0
V
UVDBr Reset level 10.5 - 12.5 V
UVDt
Control supply under-voltage
protection(UV) for N-side of
inverter part and brake part
Trip level
10.3
-
12.5
V
UVDr Reset level 10.8 - 13.0 V
VOT Temperature Output Pull down R=5.1kΩ(Note 5)
LVIC
Temperature=100°C
2.89 3.02 3.14 V
VFOH Fault output voltage VSC = 0V, FOterminal pulled up to 5V by 10kΩ4.9 - - V
VFOL VSC = 1V, IFO = 1mA - - 0.95 V
t
FO
Fault output pulse width
In case of C
Fo
=22nF
(Note 6,7)
1.6
2.4
－
ms
IIN
Input current
VIN = 5V
0.70
1.00
1.50
mA
Vth(on)
ON threshold voltage
Applied between UP,VP,WP,UN, VN, WN, AIN-VNC －
－
3.5
V
Vth(off)
OFF threshold voltage
0.8
－ －
VF
Bootstrap Di forward voltage
IF=10mA including voltage drop by limiting resistor
0.9
1.3
V
R
Built-in limiting resistance
Included in bootstrap Di
16
20
24
Ω
Note 4 : SC protection works only for N-side IGBT in inverter part. Please select the external shunt resistance such that
the SC trip-level is less than 1.7 times of the current rating.
5 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When
temperature exceeds the protective level that user defined, controller (MCU) should stop the DIPIPM.
Temperature of LVIC vs. VOT output characteristics is described in Section 2.2.3.
6 : Fault signal Fo outputs when SC or UV protection works for N-side IGBT in inverter part. The fault output
pulse-width tFO is depended on the capacitance value of CFO (CFO = tFO ×9.1 ×10-6 [F]).
7 : UV protection also works for P-side IGBT in inverter part or brake part without fault signal Fo.

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 12
Table 2-1-5 shows recommended operation conditions. Please apply and use under the recommended conditions
to operate DIPIPM+ series safely. (Tj= 25°C, unless otherwise noted)
Table 2-1-5. Recommended operation conditions of PSS25MC1FT (25A/1200V, CIB type)
RECOMMENDED OPERATION CONDITIONS
Symbol Parameter Condition
Limits
Unit
Min.
Typ.
Max.
VCC
Supply voltage
Applied between P-NU,NV,NW
0
600
800
V
VD
Control supply voltage
Applied between VP1-VNC,VN1-VNC
13.5
15.0
16.5
V
VDB Control supply voltage Applied between VUFB-VUFS,VVFB-VVFS,VWFB-VWFS 13.0 15.0 18.5 V
ΔVD, ΔVDB Control supply variation -1 - 1 V/μs
tdead
Arm shoot-through blocking time
For each input signal
3.0
-
-
μs
fPWM
PWM input frequency
TC
≤
100
°
C, Tj
≤
125
°
C
-
-
20
kHz
PWIN(on)
Minimum input pulse width
IC≤1.7 times of rated current (Note 8)
1.5
-
-
μs
PWIN(off)
0≤VCC≤800V, 13.5≤VD≤16.5V,
13.0≤VDB≤18.5V, -20≤TC≤100°C,
N line wiring inductance
less than 10nH (Note 9)
Less than
rated current
3.0 - -
From rated
current to 1.7
times of rated
current
3.5 - -
VNC
VNC variation
Between VNC- NU
､
NV
､
NW (including surge)
-5.0
-
+5.0
V
T
j
Junction temperature
-20
-
125
°C
Note 8: DIPIPM might not make response if the input signal pulse width is less than PWIN(on).
9: DIPIPM might make no response or delayed response (P-side IGBT only) for the input signal with off pulse width
less than PWIN(off). Please refer below figure about delayed response.
About Delayed Response Against Shorter Input Off Signal Than PWIN(off) (P side only)
[note] About control supply variation
If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause DIPIPM erroneous
operation. To avoid such problem, line ripple voltage should meet the following specifications:
dV/dt ≤+/-1V/μs, Vripple≤2Vp-p
P Side Control Input
Internal IGBT Gate
Output Current Ic
t1
t2
Real line
…
off pulse width>PWIN(off); turn on time t1
Broken line
…off pulse width<PWIN(off); turn on time t2

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 13
2.1.4 Mechanical characteristics and specifications
Table 2-1-6 shows mechanical characteristics and specifications.Please also refer section 2.4 for mounting
instruction of DIPIPM+.
Table 2-1-6. Mechanical characteristics and specifications of PSS25MC1FT (25A/1200V, CIB type)
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter Condition
Limits
Unit
Min. Typ. Max.
Mounting torque Mounting screw : M4 (Note 10)Recommended 1.18N·m 0.98 1.18 1.47 N·m
Terminal pulling strength
20N load
JEITA-ED-4701
10
－ －
s
Terminal bending strength
90deg bending with 10N load
JEITA-ED-4701
2
－ －
times
Weight
－
40
－
g
Heat radiation part flatness
(Note 11)
-50
－
+100
μm
Note 10: Plain washers (ISO 7089~7094) are recommended.
Note 11: Measurement positions of heat radiation part flatness are as below.
3.5
15.5
11.5
2
2
Aluminum heatsink
Heatsink side
Heatsink side
Measurement position (X)
Measurement
position (Y)
+
-
+
-

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 14
2.2 Protection functions and operating sequence
DIPIPM+ has two protection functions of short circuit (SC) and under voltage of control supply (UV). And it has
also temperature output function of LVIC (VOT). The operating principle and sequence are described as follows.
2.2.1 Short circuit protection
(1) Outline
DIPIPM+ uses external shunt resistor for the current detection as shown in Fig.2-2-1. The internal protection
circuit inside the IC captures the excessive large current by comparing the CIN voltage generated at the shunt
resistor with the referenced SC trip voltage, and perform protection automatically. The threshold voltage trip level
of the SC protection Vsc(ref) is 0.48V typical.
In case of SC protection works, all the gates of N-side three phase IGBTs will be interrupted together with a
fault signal output. To prevent DIPIPM+ erroneous protection due to normal switching noise and/or recovery
current, it is necessary to set an RC filter (time constant: 1.5μ~ 2μs) to the CIN terminal input (Fig.2-2-1, 2-2-2).
Also, please make the pattern wiring around the shunt resistor as short as possible.
Fig.2-2-1 SC protection circuit Fig.2-2-2 Filtering time constant setting
(2) SC protection sequence for only low-side with external shunt resistor and RC filter
a1. Normal operation: IGBT ON and outputs current.
a2. Short circuit current detection (SC trigger)
(It is recommended to set RC time constant 1.5~2.0μs so that IGBT shut down within 2.0μs when SC.)
a3. All N-side IGBT's gates are hard interrupted.
a4. All N-side IGBTs turn OFF.
a5. LVIC starts outputting fault signal (fault signal output time is controlled by external capacitor CFO)
a6. Input = “L”: IGBT OFF
a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (LH).
(IGBT of each phase can return to normal state by inputting ON signal to each phase.)
a8. Normal operation: IGBT ON and outputs current.
Fig.2-2-3 SC protection timing chart
V
NC
N1
N
C
Shunt resistor
P
V
U
W
N-side IGBTs
P-side IGBTs
Drive circuit
Drive circuit
SC protection circuit
CIN
DIPIPM
R
External parts
Lower-side control
input
Protection circuit state
Internal IGBT gate
Output current Ic
Sense voltage of
the
shunt resistor
Error output Fo
SC trip current level
a2
SET
RESET
SC reference voltage
a1
a3
a6
a7
a4
a8
a5
Delay by RC filtering
SC protection level
Collector current Ic
Input pulse width tw (μs)
2
0
Collector
Current
waveform

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 15
(3) Calculation of shunt resistance
The value of current sensing shunt resistance for current sensing is calculated by the following formulation:
RShunt = VSC(ref)/SC where VSC(ref) is the SC trip voltage.
The maximum SC trip level SC(max) should be set less than the IGBT minimum saturation current which is 1.7
times as large as the rated current. For example, the SC(max) of PSS25MC1FT should be set to 25x1.7=42.5A.
The parameters (VSC(ref), RShunt) dispersion should be considered when designing the SC trip level. The dispersion
of DIPIPM+ series is +/-0.025V in the specification of VSC(ref) as shown in Table 2-2-1.
Table 2-2-1 Specification for VSC(ref)
Symbol
Condition
Min
Typ
Max
Unit
VSC(ref)
T
ｊ
=25°C, VD=15V
0.455
0.480
0.505
V
Therefore, the range of SC trip level can be calculated by the following descriptions with +/-5% dispersion of
shunt resistor :
RShunt(min)=VSC(ref) max /SC(max)
where SC(max) is 1.7 times of rated current, and so 0.95 is due to -5% dispersion of shunt resistor that
RShunt(typ)= RShunt(min) / 0.95
Therefore, SC(typ) = VSC(ref) typ / RShunt(typ).
RShunt(max)= RShunt(typ) x 1.05* *1.05 is due to +5% dispersion of shunt resistor
Therefore, SC(min)= VSC(ref) min / RShunt(max)
In this case, SC trip level is 42.5A,
RShunt(min)= 0.505V / 42.5A = 11.9 mΩ, RShunt(typ)= 11.9mΩ / 0.95 = 12.5 mΩ, RShunt(max)= 12.5 x 1.05 = 13.1mΩ
When the both of SC trip level and shunt resistor will be maximum, typical and minimum, these will be described
as follows;
SC(max)= 42.5 A (setting), SC (typ) = 0.480 / 12.5 = 38.4 A, SC(min) = 0.455 / 13.1 = 34.7 A
From the above, the SC trip level range is described as Table 2-2-2.
Table 2-2-2 Operative SC Range
Condition
min.
typ.
max.
Unit
T
ｊ
=25°C, VD=15V
34.7
38.4
42.5
A
There is the possibility that the actual SC protection level becomes less than the calculated value. This is
considered due to the resonant signals caused mainly by parasitic inductance and parasitic capacitance. It is
recommended to make a confirmation of the resistance by prototype experiment.
(4) RC filter time constant
It is necessary to set an RC filter in the SC sensing circuit in order to prevent malfunction of SC protection due
to noise interference. The RC time constant is determined depending on the applying time of noise interference
and the SCSOA of the DIPIPM.
When the voltage drop on the external shunt resistor exceeds the SC trip level, The time (t1) that the CIN
terminal voltage rises to the referenced SC trip level can be calculated by the following expression:
)1ln(1
)1( 1
cshunt
SC
t
cshuntSC
IR V
t
IRV
⋅
−⋅−=
−⋅⋅= −
τ
ε
τ
Where Vsc is the CIN terminal input voltage, Ic is the peak current, τis the RC time constant.
On the other hand, the typical time delay t2 (from Vsc voltage reaches Vsc(ref) to IGBT gate shutdown) of IC
is shown in Table 2-2-3.
Table 2-2-3 Internal time delay of IC
Item
Min
typ
max
Unit
IC transfer delay time
-
-
1.0
μs
Therefore, the total delay time from an SC level current happened to the IGBT gate shutdown becomes:
tTOTAL=t1＋t2

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 16
2.2.2 Control Supply UV Protection
The UV protection is designed to prevent unexpected operating behavior as described in Table 2-2-4. Both
P-side, N-side of inverter part and Brake part have UV protecting function. However fault signal(Fo) output only
corresponds to N-side UV protection. Fo output continuously during UV state.
In addition, there is a noise filter (typ. 10μs) integrated in the UV protection circuit to prevent instantaneous UV
erroneous trip. Therefore, the control signals are still transferred in the initial 10μs after UV happened.
Table 2-2-4 DIPIPM operating behavior versus control supply voltage
Control supply voltage
(VD, VDB)
Operating behavior
0-4.0V (P, N)
In this voltage range, built-in control IC may not work properly. Normal
operating of each protection function (UV, Fo output etc.) is not also assured.
Normally IGBT does not work. But e
xternal noise may cause DIPIPM
malfunction (turns ON), so DC-link voltage need to start up after control supply
starts-up.
4.0-UVDt (N), UVDBt (P)
UV function becomes active and output Fo (N-side only).
Even if control signals are applied, IGBT does not work.
UV
Dt
(N)-13.5V
UVDBt (P)-13.0V
IGBT can work. However, conducting loss and switching loss will increase, and
result extra temperature rise at this state,.
13.5
-
16.5V (N)
13.0-18.5V (P)
Recommended conditions.
16.5-20.0V (N)
18.5-20.0V (P)
IGBT works. However, switching speed becomes fast and saturation current
becomes large at this state, increasing SC broken risk.
20.0V-(P, N)
The control circuit might be destroyed.
(note) Ripple Voltage Limitation of Control Supply
If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause
DIPIPM erroneous operation. To avoid such problem happens, line ripple voltage should meet the
following specifications:
dV/dt≤+/-1V/μs, Vripple ≤ 2Vp-p

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 17
(1) N-side UV Protection Sequence
a1. Control supply voltage VD exceeds under voltage reset level (UVDr), but IGBT turns ON by next
ON signal (LH).(IGBT of each phase can return to normal state by inputting ON signal to each phase.)
a2. Normal operation: IGBT ON and carrying current.
a3. VD level dips to under voltage trip level. (UVDt).
a4. All N-side IGBTs turn OFF in spite of control input condition.
a5. Fo outputs for the period set by the capacitance CFO, but output is extended during VDkeeps below UVDr.
a6. VD level reaches UVDr.
a7. Normal operation: IGBT ON and outputs current.
Fig.2-2-4 Timing Chart of N-side UV protection
(2) P-side UV Protection Sequence
a1. Control supply voltage VDB rises. After the voltage reaches under voltage reset level UVDBr,
IGBT turns on by next ON signal (LH).
a2. Normal operation: IGBT ON and outputs current.
a3. VDB level drops to under voltage trip level (UVDBt).
a4. IGBT of the corresponding phase only turns OFF in spite of control input signal level,
but there is no FOsignal output.
a5. VDB level reaches UVDBr.
a6. Normal operation: IGBT ON and outputs current.
Fig.2-2-5 Timing Chart of P-side UV protection
UV
Dr
RESET
SET
RESET
UV
Dt
a1
a2
a3
a4
a6
a7
a5
Control input
Protection circuit state
Control supply voltage V
D
Output current Ic
Error output Fo
Control input
Protection circuit state
Control supply voltage V
DB
Output current Ic
Error output Fo
UV
DBr
RESET
SET
RESET
UV
DBt
Keep High-level (no fault output)
a1
a2
a3
a4
a5
a6

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 18
(3) Brake UV Protection Sequence ( with Brake product only : PSSxxMC1Fx)
a1. Control supply voltage VDrises. After the voltage reaches under voltage reset level UVDr,
IGBT turns on by next ON signal (LH).
a2. Normal operation: IGBT ON and collector current.
a3. VD level drops to under voltage trip level (UVDt).
a4. IGBT of the corresponding phase only turns OFF in spite of control input signal level,
but there is no FOsignal output.
a5. VD level reaches UVDr.
a6. Normal operation: IGBT ON and outputs current.
Fig.2-2-6 Timing Chart of brake circuit UV protection
Control input
Protection circuit state
Control supply voltage V
D
Output current Ic
Error output Fo
UV
Dr
RESET
SET
RESET
UV
Dt
Keep High-level (no fault output)
a1
a2
a3
a4
a5
a6

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 19
2.2.3 Temperature output function VOT
(1) Usage of this function
This function measures the temperature of control LVIC by built in temperature sensor on LVIC.
The heat generated at IGBT and FWDi transfers to LVIC through molding resin of package and outer heat sink.
So LVIC temperature cannot respond to rapid temperature rise of those power chips effectively. (e.g. motor lock,
short circuit). It is recommended to use this function for protecting from slow excessive temperature rise by such
cooling system down and continuance of overload operation. （Replacement from the thermistor which was
mounted on outer heat sink currently）
(note)
In this function, DIPIPM cannot shutdown IGBT and output fault signal by itself when temperature rises
excessively. When temperature exceeds the defined protection level, controller (MCU) should stop the
DIPIPM.
Fig.2-2-7 Temperature detecting point Fig.2-2-8 Thermal conducting from power chips
(2) VOT characteristics
VOT output circuit, which is described in Fig.2-2-9, is the output of OP amplifier circuit. The current capability
of VOT output is described as Table 2-2-5. The characteristics of VOT output vs. LVIC temperature is linear
characteristics described in Fig.2-2-11. There are some cautions for using this function as follows.
Table 2-2-5 Output capability
(Tc=-20°C ~100°C)
min.
Source
1.7mA
Sink
0.1mA
Source: Current flow from VOT to outside.
Sink : Current flow from outside to VOT.
Fig.2-2-9 VOT output circuit
(note) In the case of detecting lower temperature than room temperature
It is recommended to insert 5.1kΩpull down resistor for getting linear output characteristics at lower
temperature than room temperature. When the pull down resistor is inserted between VOT and VNC(control
GND), the extra current calculated by VOT output voltage / pull down resistance flows as LVIC circuit
current continuously. In the case of only using VOT for detecting higher temperature than room
temperature, it isn't necessary to insert the pull down resistor.
Fig.2-2-10 VOT output circuit in the case of detecting low temperature
Ref
V
OT
Temperature
signal
V
NC
Inside LVIC
of
DIPIPM
5V
MCU
Ref
V
OT
Temperature
signal
V
NC
Inside LVIC
of
DIPIPM
5.1kΩ
MCU
LVIC
(Detecting point)
Power chip area
Heatsink
IGBT
LVIC
FWDi
Temperature of
LVIC is affected
from heatsink.

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Publication Date: September 2016 20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
4
-30 -20 -10 010 20 30 40 50 60 70 80 90 100 110 120 130
VOT output [V]
LVIC temperature [degC]
3.14
3.02
2.89
Max. Min.Typ.
Fig.2-2-11 VOT output vs. LVIC temperature
←
Output range without 5.1k
Ω
pull down resistor
(Output might saturated under this level)
←
Output range with 5.1k
Ω
pull down resistor
(Output might saturated under this level)