Panasonic Fast Recovery Diodes MA3DF40 User manual

Fast Recovery Diodes (FRD)
Publication date: October 2007 SKJ00021AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA3DF40
Silicon Mesa type
For high frequency rectification
For plasma display panel drive
Features
High switching speed trr
Soft recovery
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage VRRM 370 V
Non-repetitive peak reverse surge voltage VRSM 430 V
Forward current TC= 25°C IF20 A
Non-repetitive peak forward surge current
*IFSM 100 A
Junction temperature Tj–40 to +150 °C
Storage temperature Tstg –40 to +150 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF= 20 mA 1.2 1.4 V
Reverse current IRRM VRRM = 370 V 10 mA
Reverse recovery time *trr
IF= 0.5 A, IR= 1.0 A
Irr = 0.25 A 20 35 ns
Thermal resistance (j-a) Rth(j-c) 3.0 °C/W
Thermal resistance (j-c) Rth(j-a) 63 °C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: trr measurement circuit
D.U.T
trr
0.25 ×IR
IF
IR
50 Ω
5.5 Ω
50 Ω
Package
Code
TO-220D-A1
Pin Name
1: Anode
2: Cathode
3: Anode
Marking Symbol: MA3DF40
Intemal Connection
1 32

MA3DF40
2SKJ00021AED
This product complies with RoHS Directive (EU 2002/95/EC).
5.08 ±0.50
Solder Dip
9.9 ±0.3
15.0 ±0.513.7 ±0.2
1.4 ±0.2
1.6 ±0.2
0.8 ±0.1
φ3.2 ±0.1
0.55 ±0.15
1 2 3
3.0 ±0.5
4.2 ±0.2
4.6 ±0.2
2.9 ±0.2
2.6 ±0.1
2.54 ±0.30
TO-220D-A1 Unit: mm

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