Panasonic Transistors 2SB0621A User manual

Transistors
Publication date : October 2008 SJC00416AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0621A
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SD0592A
Features
Low collector-emitter saturation voltage VCE(sat)
High transition frequency fT
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –60 V
Collector-emitter voltage (Base open) VCEO –50 V
Emitter-base voltage (Collector open) VEBO –5 V
Collector current IC–1 A
Peak collector current ICP –1.5 A
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= –10 mA, IE= 0 –60 V
Collector-emitter voltage (Base open) VCEO IC= –2 mA, IB= 0 –50 V
Emitter-base voltage (Collector open) VEBO IE= –10 mA, IC= 0 –5 V
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE= 0 – 0.1 mA
Forward current transfer ratio hFE1 *VCE = –10 V, IC= –500 mA 85 340

hFE2 VCE = –5 V, IC= –1 A 50
Collector-emitter saturation voltage VCE(sat) IC= –500 mA, IB= –50 mA – 0.2 – 0.4 V
Base-emitter saturation voltage VBE(sat) IC= –500 mA, IB= –50 mA – 0.85 –1.2 V
Transition frequency fTVCB = –10 V, IE= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, IE= 0, f = 1 MHz 20 30 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
Package
Code
TO-92B-B1
Pin Name
1. Emitter
2. Collector
3. Base

2SB0621A
2SJC00416AED
This product complies with the RoHS Directive (EU 2002/95/EC).
PCTaICVCE ICIB
VCE(sat) ICVBE(sat) IC hFE IC
0 16040 12080
0
1.0
0.8
0.6
0.4
0.2
Collector power dissipation PC(W)
Ambient temperature Ta(°C)
0−10−8−2−6−4
0
−1.50
−1.25
−1.00
−0.75
−0.50
−0.25
IB=−10 mA
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
Ta=25°C
Collector current IC(A)
Collector-emitter voltage VCE (V)
−0.01 −0.1 −1−10
−0.01
−0.1
−1
−10
−100 IC/ IB=10
−25°C
Ta=75°C
25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(A)
−0.01 −0.1 −1−10
−0.01
−0.1
−1
−10
−100 IC/ IB=10
Ta=−25°C
75°C
25°C
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC(A)
−0.01 −0.1 −1−10
0
500
400
300
200
100
VCE =−10 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(A)
1 10 100
0
200
160
120
80
40
VCB =−10 V
Ta=25°C
Transition frequency fT(MHz)
Emitter current IE(mA)
−1−10 −100
0
50
40
30
20
10
IE=0
f =1 MHz
Ta=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
0.1 1 10 100
Collector-emitter voltage (Resistor between B and E) VCER (V)
0
−120
−100
−80
−60
−40
−20
IC=−10 mA
Ta=25°C
Base-emitter resistance RBE (kΩ)
0−12−10−8−2−6−4
0
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
VCE =−10 V
Ta=25°C
Base current IB(mA)
Collector current IC(A)
fTIECob VCB VCER RBE

2SB0621A
SJC00416AED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
ICEO Ta安全動作領域
0 16040 12080
1
10
102
103
104VCE =−10 V
Ambient temperature Ta(°C)
ICEO (Ta)
ICEO (Ta=25°C)
−0.1 −1−10 −100
−0.001
−0.01
−0.1
−1
−10 Single pulse
Ta=25°C
t =10 ms
t =1 s
ICP
IC
Collector current IC(A)
Collector-emitter voltage VCE (V)

2SB0621A
4SJC00416AED
This product complies with the RoHS Directive (EU 2002/95/EC).
TO-92-B1 Unit: mm
5.0 ±0.2
5.1 ±0.212.9 ±0.5
0.7 ±0.2
0.7 ±0.1
0.45
4.0 ±0.2
0.45
2.3 ±0.2
123
2.5
2.5
+0.15
−0.1
+0.6
−0.2
+0.15
−0.1
+0.6
−0.2

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