Panasonic Transistors 2SC4562G User manual

Transistors
1
Publication date: May2007 SJC00366AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4562G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1748G
■Features
•High transition frequency fT
•Small collector output capacitance (Common base, input open cir-
cuited) Cob
•S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=050V
Collector-emitter voltage (Base open) VCEO IC=1 mA, IB=050V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=05V
Collector-base cutoff current (Emitter open) ICBO VCB =10 V, IE=0 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =10 V, IB=0 100 µA
Forward current transfer ratio *hFE VCE =10 V, IC=2 mA 200 500 
Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1 mA 0.06 0.30 V
Transition frequency fTVCB =10 V, IE=−2 mA, f =200 MHz 250 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 1.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R
hFE 200 to 400 250 to 500
■Package
•Code
SMini3-F2
•Marking Symbol: AM
•Pin Name
1: Base
2: Emitter
3: Collector

2SC4562G
2SJC00366AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) IChFE ICfTIE
PCTaICVCE ICVBE
Cob VCB
0 16040 12080
0
200
160
120
80
40
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
012108264
0
120
100
80
60
40
20
Ta=25°C
250 µA
200 µA
150 µA
100 µA
50 µA
IB=300 µA
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0 1.21.00.80.2 0.60.4
0
60
50
40
30
20
10
V
CE
=10 V
T
a
=75°C
−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
1 10 100 1 000
0.01
0.1
1
10
100 IC/ IB=10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
0.1 1 10 100
0
600
500
400
300
200
100
VCE =10 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
−0.1 −1−10 −100
0
600
500
400
300
200
100
V
CB
=10 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
1 10 100
0
6
5
4
3
2
1
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)

This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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