Panasonic Transistors 2SD1819G User manual

Transistors
1
Publication date: May 2007 SJC00372AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1819G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1218G
■Features
•High forward current transfer ratio hFE
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape pacing and the magazine
pacing.
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=060V
Collector-emitter voltage (Base open) VCEO IC=2 mA, IB=050V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=07V
Collector-base cutoff current (Emitter open) ICBO VCB =20 V, IE=0 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =10 V, IB=0 100 µA
Forward current transfer ratio hFE1 *VCE = 10 V, IC= 2 mA 160 460 
hFE2 VCE = 2 V, IC= 100 mA 90
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10 mA 0.1 0.3 V
Transition frequency fTVCB =10 V, IE=−2 mA, f =200 MHz 150 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 3.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S No rank
hFE1 160 to 260 210 to 340 290 to 460 160 to 460
Marking symbol ZQ ZR ZS Z
Product of no-rank is not classified and have no marking symbol for rank.
■Package
•Code
SMini3-F2
•Marking Symbol: Z
•Pin Name
1: Base
2: Emitter
3: Collector

2SD1819G
2SJC00372AED
This product complies with the RoHS Directive (EU 2002/95/EC).
ICVBE ICIBVCE(sat) IC
PCTaICVCE IBVBE
hFE ICfTIE
0 16040 12080
0
200
160
120
80
40
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0108264
0
60
50
40
30
20
10
T
a
=25°C
I
B
=160 µA
40 µA
20 µA
60 µA
80 µA
140 µA
120 µA
100 µA
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0 1.00.80.2 0.60.4
0
1 200
1 000
800
600
400
200
VCE =10 V
Ta=25°C
Base-emitter voltage VBE (V)
Base current IB(µA)
0 2.01.60.4 1.20.8
0
200
160
120
80
40
V
CE
=10 V
T
a
=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0 1 000800200 600400
0
240
200
160
120
80
40
V
CE
=10 V
T
a
=25°C
Base current IB(µA)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
=10
25°C
−25°C
T
a
=75°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0.1 1 10 100
0
600
500
400
300
200
100
V
CE
=10 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−0.1 −1−10 −100
0
300
240
120
180
60
V
CB
=10 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)

This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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