Panasonic Switching Diodes MA36132E User manual

Switching Diodes
Publication date: September 2006 SKF00069AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA36132E
Silicon epitaxial planar type
For high speed switching circuits
Features
Two elements are contained in one package, optimum for high-density
mounting
Short reverse recovery time trr
Small terminal capacitance Ct
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current IF
150 mA
100 *2
Forward current (Average) IFM
340 mA
225 *2
Non-repetitive peak forward surge current *1IFSM
750 mA
500 *2
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *1: t = 1 s
*2: Value for single diode
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current VFIF= 100 mA 1.2 V
Reverse voltage VRIR= 100 mA 80 V
Reverse current IRVR= 75 V 100 nA
Terminal capacitance CtVR= 0, f = 1 MHz 2 pF
Reverse recovery time *trr
IF= 10 mA, VR= 6 V, Irr = 0.1 IR,
RL= 100 W3 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= 10 mA
VR= 6 V
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Marking Symbol: A2
Internal Connection
Unit: mm
1: Anode 1
2: Anode 2
3: Cathode 1, 2 ML3-N2 Package
0.60±0.05
1.00±0.05
2
1
3
0.39+0.01
−0.03
0.25±0.05 0.25±0.05
0.50±0.05
0.65±0.01
0.15±0.05
2
1
0.35±0.01
0.05±0.03
0.01±0.005
0.05±0.03
3
1
2
3

MA36132E
2 SKF00069AED
This product complies with RoHS Directive (EU 2002/95/EC).
IFVFIRVRVFTa
IRTaCtVRIF(surge) tW
00.2 0.4 0.6 1.20.8 1.0
10−2
10−1
1
10
103
102
MA36132E_ IF - VF
Forward current IF(mA)
Forward voltage VF(V)
Ta =150°C
100°C
25°C
−20°C
020 40 60 12080 10
1
10
102
103
105
104
MA36132E_ IR - VR
Reverse current IR(nA)
Reverse voltage VR(V)
Ta =150°C
100°C
25°C
−40 0 40 80 200120 160
0
0.4
0.8
1.6
1.2
MA36132E_ VF - Ta
Forward voltage VF(V)
Ambient temperature Ta(°C)
IF= 100 mA
10 mA
3 mA
−40 0 40 80 200120 160
1
10
102
103
105
104
MA36132E_ IR - Ta
Reverse current IR(nA)
Ambient temperature Ta(°C)
VR= 75 V
35 V
6 V
020 40 60 12080 10
0
0.2
0.4
0.6
1.2
0.8
1.0
MA36132E_ Ct - VR
Terminal capacitance Ct(pF)
Reverse voltage VR(V)
f = 1 MHz
Ta =25°C
10−11 10
10−1
10
1
102
103
MA36132E_ IF(surge) - tW
Forward surge current IF(surge) (A)
Pulse width tW(ms)
tW
Non repetitive
IF(surge)
Ta =25°C

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