Panasonic Transistors 2SA1791J User manual

Transistors
1
Publication date: September 2004 SJC00309AED
2SA1791J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656J
■Features
•High transition frequency fT
•Small collector output capacitance Cob
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −50 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−50 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −50 V
Collector-emitter voltage (Base open) VCEO IC=−1 mA, IB=0 −50 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −5V
Collector-base cutoff current (Emitter open) ICBO VCB =−10 V, IE=0 −0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =−10 V, IB=0 −100 µA
Forward current transfer ratio *hFE VCE = −10 V, IC= −2 mA 200 500 
Collector-emitter saturation voltage VCE(sat) IC=−10 mA, IB=−1 mA −0.1 −0.3 V
Transition frequency fTVCB =−10 V, IE=2 mA, f =200 MHz 250 MHz
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 1.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
0.27 ±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00 ±0.05
(0.50)(0.50)
+0.05 –0.03
Rank Q R
hFE 200 to 400 250 to 500
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Marking Symbol: AL
1 : Base
2 : Emitter EIAJ : SC-89
3 : Collector SSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1791J
2SJC00309AED
VCE(sat) IChFE ICCob VCB
PCTaICVCE ICVBE
040 80 120
0
20
40
60
80
100
120
140
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0−12−10−8−2−6−4
0
−20
−30
−10
−40
−50
−60
−70
−80
−90
IB=−300 µA
Ta=25°C
−100 µA
−50 µA
−150 µA
−250 µA
−200 µA
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0−0.2 −0.6 −0.8 −1.0 −1.2−0.4 −1.4
0
−50
−30
−40
−20
−10
VCE = −10 V
Ta= 85°C
25°C
−25°C
Base-emitter voltage VBE (V)
Collector current IC(mA)
25°C
−25°C
T
a
= 85°C
I
C
/ I
B
= 10
Collector current I
C
(mA)
Collector-emitter saturation voltage V
CE(sat)
(V)
− 0.01
− 0.1
− 0.1
−1
−1−10 −100
Ta= 85°C
25°C
−25°C
VCE = −10 V
Collector current IC(mA)
Forward current transfer ratio hFE
0
600
500
200
100
400
300
−1−10 −100
0−40−10 −30−20
f =1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
0
0.5
3.5
3.0
2.5
1.0
2.0
1.5
This product complies with the RoHS Directive (EU 2002/95/EC).

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