Panasonic Switching Diodes MA2S101 User manual

1
Publication date: November 2003 SKF00062BED
Switching Diodes
MA2S101
Silicon epitaxial planar type
For switching circuits
■Features
•High breakdown voltage: VR=250 V
•Small terminal capacitance Ct
•Suitable for high-density mounting
■Absolute Maximum Ratings Ta=25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR250 V
Repetitive peak reverse voltage VRRM 250 V
Forward current IF100 mA
Peak forward current IFM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=70 mA 1.2 V
Reverse current IRVR=250 V 1.0 µA
Terminal capacitance CtVR=0 V, f =1 MHz 3.0 pF
Reverse recovery time *trr IF=IR=10 mA 60 ns
Irr =1 mA , RL=100 Ω
■Electrical Characteristics Ta=25°C ±3°C
Marking Symbol: 1P
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= IR= 10 mA
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
trtp
trr
VR
IF
t
t
A
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. *: trr measurement circuit
Note) *:t=1 s
This product complies with the RoHS Directive (EU 2002/95/EC).

MA2S101
2SKF00062BED
IFVFIRVRCtVR
0 0.2 0.6 0.8 1.0 1.20.4 1.4
10−3
10−2
10−1
1
102
10
103
−20°C
100°C
Ta= 150°C
25°C
Forward voltage V
F
(V)
Forward current I
F
(mA)
0 30025020050 150100
10
−3
10
−2
10
−1
1
10
2
10
Reverse voltage VR(V)
Reverse current IR(nA)
T
a
= 150°C
100°C
25°C
0 300200100
0
0.7
0.6
0.2
0.5
0.4
0.1
0.3
T
a
= 25°C
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

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