Panasonic 2SD1478A User manual

Transistors
Publication date: October 2008 SJC00414AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1478A
Silicon NPN epitaxial planar type darlington
For low frequency amplification
Features
Forward current transfer ratio hFE is designed high, which is appropriate to the
driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 5 V
Collector current IC500 mA
Peak collector current ICP 750 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55 to +150 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= 100 mA, IE= 0 60 V
Collector-emitter voltage (Base open) VCEO IC= 1 mA, IB= 0 50 V
Emitter-base voltage (Collector open) VEBO IE= 100 mA, IC= 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE= 0 100 nA
Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC= 0 100 nA
Forward current transfer ratio *1, *2hFE VCE = 10 V, IC= 500 mA 4 000 20 000 
Collector-emitter saturation voltage *1VCE(sat) IC= 500 mA, IB= 0.5 mA 2.5 V
Base-emitter saturation voltage *1VBE(sat) IC= 500 mA, IB= 0.5 mA 3.0 V
Transition frequency fTVCB = 10 V, IE= -50 mA, f = 200 MHz 200 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R
hFE 4 000 to 10 000 8 000 to 20 000
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: 2O
Internal Connection
B
C
E

2SD1478A
2SJC00414AED
This product complies with the RoHS Directive (EU 2002/95/EC).
040 80 120 160
0
80
160
240
2SD1478A_ PC-Ta
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
10−11 10 102
10−1
1
10
102
103
2SD1478A_ IC-VCE
Collector current IC(mA)
Collector-emitter voltage VCE (V)
Ta =25°C
IB=50 µA
45 µA
40 µA
35 µA
30 µA
25 µA
20 µA
15 µA
10 µA
5 µA
10−210−11 10
10−1
10
1
2SD1478A_ VCE(sat)-IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(A)
IC / IB =1 000
Ta =75°C
25°C
−25°C
10−210−11 10
10−1
10
1
2SD1478A_ VBE(sat)-IC
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC(A)
IC / IB =1 000
Ta =−25°C
25°C
75°C
10−210−11
102
103
104
105
2SD1478A_ hFE-IC
Forward current transfer ratio hFE
Collector current IC(A)
VCE =10 V
Ta =75°C
25°C
−25°C
110 102
0
2
4
6
2SD1478A_ Cob-VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
Collector-base voltage VCB (V)
IE =0
f=1 MHz
Ta =25°C
PCTaICVCE VCE(sat) IC
VBE(sat) IChFE ICCob VCB

2SD1478A
SJC00414AED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
Mini3-G1 Unit: mm
(0.95)
(0.95)
1.9 ±0.1
0.40
1.50
2.8
2.90
3
2
1
5°
0.4 ±0.2
0.16
10°
1.1
1.1
0 to 0.1 (0.65)
+0.10
−0.05
+0.25 −0.05
+0.2 −0.3
+0.20
−0.05
+0.2 −0.1
+0.3 −0.1
+0.10
−0.05

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