Panasonic 2SD1820G User manual

Transistors
1
Publication date: May 2007 SJC00373AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1820G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219G
■Features
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■Absolute Maximum Ratings Ta=25°C
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC500 mA
Peak collector current ICP 1A
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=060V
Collector-emitter voltage (Base open) VCEO IC=2 mA, IB=050V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=05V
Collector-base cutoff current (Emitter open) ICBO VCB =20 V, IE=0 0.1 µA
Forward current transfer ratio *1hFE1 *2VCE =10 V, IC=150 mA 85 340 
hFE2 VCE =10 V, IC=500 mA 40
Collector-emitter saturation voltage *1VCE(sat) IC=300 mA, IB=30 mA 0.35 0.60 V
Transition frequency *1fTVCB =10 V, IE=−50 mA, f =200 MHz 200 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 6 15 pF
(Common base, input open circuited)
Rank Q R S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Marking symbol XQ XR XS X
Product of no-rank is not classified and have no marking symbol for rank.
■Package
•Code
SMini3-F2
•Marking Symbol: X
•Pin Name
1: Base
2: Emitter
3: Collector

2SD1820G
2SJC00373AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) ICVBE(sat) IChFE IC
PCTaICVCE ICIB
fTIECob VCB VCER RBE
0 16040 12080
0
240
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
020164128
0
800
600
200
500
700
400
100
300
T
a
=25°C
I
B
=10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0108264
0
800
600
200
500
700
400
100
300
V
CE
=10 V
T
a
=25°C
Base current I
B
(mA)
Collector current I
C
(mA)
0.01 0.1 1 10
0.01
0.1
1
10
100 I
C
/ I
B
=10
25°C
−25°C
T
a
=75°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
0.01 0.1 1 10
0.01
0.1
1
10
100 IC/ IB=10
Ta=−25°C
25°C
75°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
0.01 0.1 1 10
0
300
250
200
150
100
50
V
CE
=10 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(A)
−1−10 −100
0
240
200
160
120
80
40
V
CB
=10 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
1 10 100
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
0
12
10
8
6
4
2
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage V
CB
(V)
1101001000
0
120
100
80
60
40
20
IC=2 mA
Ta=25°C
Base-emitter resistance RBE (kΩ)
Collector-emitter voltage (Resistor between B and E) VCER (V)

This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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