Panasonic 2SB1220G User manual

Transistors
1
Publication date: April 2007 SJC00354AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1220G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821G
■Features
•High collector-emitter voltage (Base open) VCEO
•Low noise voltage NV
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −150 V
Collector-emitter voltage (Base open) VCEO −150 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−50 mA
Peak collector current ICP −100 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC=−100 µA, IB=0 −150 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −5V
Collector-base cutoff current (Emitter open) ICBO VCB =−100 V, IE=0 −1µA
Forward current transfer ratio *hFE VCE =−5 V, IC=−10 mA 130 450 
Collector-emitter saturation voltage VCE(sat) IC=−30 mA, IB=−3 mA −1V
Transition frequency fTVCB =−10 V, IE=10 mA, f =200 MHz 200 MHz
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 4 pF
(Common base, input open circuited)
Noixe voltage NV VCE =−10 V, IC=−1 mA, GV=80 dB 150 mV
Rg=100 kΩ, Function =FLAT
Rank R S T
hFE 130 to 220 185 to 330 260 to 450
■Package
•Code
SMini3-F2
•Marking Symbol: I
•Pin Name
1. Base
2. Emitter
3. Collector

2SB1220G
2SJC00354AED
This product complies with the RoHS Directive (EU 2002/95/EC).This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) IChFE ICfTIE
PCTaICVCE ICVBE
Cob VCB
0 16040 12080
0
200
160
120
80
40
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0−12−10−8−2−6−4
0
−100
−80
−60
−40
−20
T
a
=25°C
−2 mA
−1 mA
−3 mA
−4 mA
−5 mA
−6 mA
−7 mA
−8 mA
−9 mA
I
B
=−10 mA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0−2.0−1.6−0.4 −1.2−0.8
0
−120
−100
−80
−60
−40
−20
VCE =−5 V
Ta=75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current IC(mA)
−0.1 −1−10 −100
−0.01
−0.1
−1
−10
−100 IC/ IB=10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
−0.1 −1−10 −100
0
600
500
400
300
200
100
V
CE
=−5 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0.1 1 10 100
0
250
200
150
100
50
V
CB
=−10 V
T
a
=25°C
Transition frequency fT(MHz)
Emitter current IE(mA)
−1−10 −100
Collector output capacitance (Common base, input open circuited) Cob (pF)
0
10
8
6
4
2
IE=0
f =1 MHz
Ta=25°C
Collector-base voltage VCB (V)

This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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