Panasonic Transistors 2SB1218A User manual

Transistors
1
Publication date: March 2003 SJC00071BED
2SB1218A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1819A
■Features
•High forward current transfer ratio hFE
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −45 V
Collector-emitter voltage (Base open) VCEO −45 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−100 mA
Peak collector current ICP −200 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −45 V
Collector-emitter voltage (Base open) VCEO IC=−2 mA, IB=0 −45 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −7V
Collector-base cutoff current (Emitter open) ICBO VCB =−20 V, IE=0 −0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =−10 V, IB=0 −100 µA
Forward current transfer ratio *hFE VCE =−10 V, IC=−2 mA 160 460 
Collector-emitter saturation voltage VCE(sat) IC=−100 mA, IB=−10 mA −0.3 −0.5 V
Transition frequency fTVCB =−10 V, IE=1 mA, f =200 MHz 80 MHz
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 2.7 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Marking Symbol: B
Rank Q R S No-rank
hFE 160 to 260 210 to 340 290 to 460 160 to 460
Marking symbol BQ BR BS B
Product of no-rank is not classified and have no marking symbol for rank.
2.1±0.1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65) (0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9+0.2
–0.1
0.15+0.10
–0.05
5°
10°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Unit: mm
This product complies with the RoHS Directive (EU 2002/95/EC).

2SB1218A
2SJC00071BED
IBVBE ICVBE VCE(sat) IC
PCTaICVCE ICIB
hFE ICfTIECob VCB
0 16040 12080
0
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0−12−10−8−2−6−4
0
−120
−100
−80
−60
−40
−20
T
a
=25°C
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
I
B
=−300 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0−300 −450−150
0
−60
−50
−40
−30
−20
−10
V
CE
=−5 V
T
a
=25°C
Base current IB(µA)
Collector current I
C
(mA)
0−0.4 −0.8 −1.6−1.2
0
−400
−300
−100
−250
−350
−200
−50
−150
VCE =−5 V
Ta=25°C
Base-emitter voltage VBE (V)
Base current IB(µA)
0−2.0−1.6−0.4 −1.2−0.8
0
−240
−200
−160
−120
−80
−40
V
CE
=−5 V
T
a
=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
−1−10 −100 −1 000
−0.001
−0.01
−0.1
−1
−10 I
C
/ I
B
=10
25°C
−25°C
T
a
=75°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
−1−10 −100 −1 000
0
600
500
400
300
200
100
VCE =−10 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
0.1 1 10 100
0
160
120
40
100
140
80
20
60
V
CB
=−10 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
−1−10 −100
0
8
6
2
5
7
4
1
3
Collector output capacitance (Common base, input open circuited) Cob (pF)
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
This product complies with the RoHS Directive (EU 2002/95/EC).

2SB1218A
3
SJC00071BED
h Parameter VCE
NF IENF IEh Parameter IE
0.01 0.1 1 10
0
6
5
4
3
2
1
V
CB
=−5 V
f =1 kHz
R
g
=2 kΩ
T
a
=25°C
Noise figure NF (dB)
Emitter current I
E
(mA)
0.1 1 10
0
20
16
12
8
4
V
CB
=−5 V
R
g
=50 kΩ
T
a
=25°C
f =100 Hz
10 kHz
1 kHz
Noise figure NF (dB)
Emitter current I
E
(mA)
0.1 1 10
1
100
10
V
CE
=−5 V
f =270 Hz
T
a
=25°C
h
fe
h
oe
(µS)
h
ie
(kΩ)
h
re
(×10
−4
)
h Parameter
Emitter current I
E
(mA)
−1−10 −100
1
100
10
I
E
=2 mA
f =270 Hz
T
a
=25°C
h
fe
h
oe
(µS)
h
ie
(kΩ)
h
re
(×10
−4
)
h Parameter
Collector-emitter voltage VCE (V)
This product complies with the RoHS Directive (EU 2002/95/EC).

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