Panasonic 2SC4835G User manual

Transistors
1
Publication date: May 2007 SJC00368AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4835G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■Features
•Low noise figure NF
•High forward transfer gain S21e2
•High transition frequency fT
•S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=015V
Collector-emitter voltage (Base open) VCEO IC=100 µA, IB=010 V
Collector-base cutoff current (Emitter open) ICBO VCB =10 V, IE=01µA
Emitter-base cutoff current (Collector open) IEBO VEB =2 V, IC=01µA
Forward current transfer ratio *1, 2 hFE VCE =8 V, IC=20 mA 50 200 
Transition frequency fTVCE =8 V, IC=15 mA, f =800 MHz 5 6 GHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 0.7 1.2 pF
(Common base, input open circuited)
Forward transfer gain S21e2VCE =8 V, IC=15 mA, f =800 MHz 11 14 dB
Maximum unilateral power gain GUM VCE =8 V, IC=15 mA, f =800 MHz 15 dB
Noise figure NF VCE =8 V, IC=7 mA, f =800 MHz 1.3 2.0 dB
■Electrical Characteristics Ta=25°C ±3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 2V
Collector current IC80 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R S
hFE 50 to 100 80 to 130 100 to 200
■Package
•Code
SMini3-F2
•Marking Symbol: 3M
•Pin Name
1: Base
2: Emitter
3: Collector

2SC4835G
2SJC00368AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) IChFE ICfTIC
PCTaICVCE ICVBE
Cob VCB GUM ICNF IC
0 16040 12080
0
200
160
120
80
40
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
012108264
0
24
20
16
12
8
4
T
a
=25°C
180 µA
160 µA
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
I
B
=200 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
02.01.60.4 1.20.8
0
120
100
80
60
40
20
VCE =8 V
Ta=75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current IC(mA)
0.1 1 10 100
0.01
0.1
1
10
100 IC/ IB=10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
0.1 1 10 100
0
600
500
400
300
200
100
V
CE
=8 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0.1 1 10 100
0
2.4
2.0
1.6
1.2
0.8
0.4
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
0.1 1 10 100
0
24
20
16
12
8
4
V
CE
=8 V
f =800 MHz
T
a
=25°C
Maximum unilateral power gain G
UM
(dB)
Collector current I
C
(mA)
0.1 1 10 100
0
12
10
8
6
4
2
VCE =8 V
(Rg=50 Ω)
f =800 MHz
Ta=25°C
Noise figure NF (dB)
Collector current IC(mA)
0.1 1 10 100
0
12
10
8
6
4
2
VCE =8 V
f =800 MHz
Ta=25°C
Transition frequency fT(GHz)
Collector current IC(mA)

This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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