Philips TDA1561Q User manual

DATA SHEET
Preliminary specification
Supersedes data of 1997 Jun 11
File under Integrated Circuits, IC01
1997 Aug 14
INTEGRATED CIRCUITS
TDA1561Q
2×23 W high efficiency car radio
power amplifier

1997 Aug 14 2
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
FEATURES
•Low dissipation due to switching from Single-Ended
(SE) to Bridge-Tied Load (BTL) mode
•High Common Mode Rejection Ratio (CMRR)
•Mute/standby/operating/SE-only (mode select pin)
•Zero crossing mute and standby circuit
•Load dump protection circuit
•Short-circuit safe to ground, to supply voltage and
across load
•Loudspeaker protection circuit
•Device switches to single-ended operation at excessive
junction temperatures.
GENERAL DESCRIPTION
TheTDA1561Qisamonolithicpoweramplifierina13 lead
single-in-line (SIL) plastic power package. It contains two
identical 23 W amplifiers. The dissipation is minimized by
switchingfrom SEto BTLmode, onlywhen ahigher output
voltage swing is needed. The device is primarily
developed for car radio applications.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VPsupply voltage DC biased 6.0 14.4 18 V
non operating −−30 V
load dump −−50 V
IORM repetitive peak output current −−4A
I
q(tot) total quiescent current RL=∞−95 150 mA
Istb standby current −150µA
Z
i
input impedance −60 −kΩ
Pooutput power RL = 4 Ω; EIAJ −36 −W
THD 10% 21 23 −W
Gvvoltage gain 31 32 33 dB
CMRR common mode rejection ratio f = 1 kHz; Rs=0Ω−80 −dB
SVRR supply voltage ripple rejection f = 1 kHz; Rs=0Ω45 55 −dB
∆VODC output offset voltage −−150 mV
αcs channel separation Rs=0kΩ40 60 −dB
∆Gvchannel unbalance −−1dB
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA1561Q DBS13P plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) SOT141-6

1997 Aug 14 3
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MLD214
REFERENCE
SOURCES
MUTE/STANDBY
THERMAL/
SHORT-CIRCUIT
PROTECTION
HIGHER
TEMPERATURE
BTL DISABLE
0.5VP
MUTE
R
MUTE
R
7
VP
12
3
13
2
1
IN1
IN2
CIN
MODE
1/2R
HV
4
GND1
10
GND2
6
5
11
9
8OUT2
OUT2
OUT1
OUT1
C
TDA1561Q
P
11

1997 Aug 14 4
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
PINNING
SYMBOL PIN DESCRIPTION
IN1 1 input 1
HVP2 half supply voltage control input
MODE 3 mute/standby/operating/SE-only
GND1 4 ground 1
OUT1 5 inverting output 1
OUT1 6 non-inverting output 1
VP7 supply voltage
OUT2 8 inverting output 2
OUT2 9 non-inverting output 2
GND2 10 ground 2
C11 11 electrolytic capacitor for
single-ended (SE) mode
CIN 12 common input
IN2 13 input 2
Fig.2 Pin configuration.
handbook, halfpage
MLD215
1
2
3
4
5
6
7
8
9
10
11
12
13
TDA1561Q
IN1
HV
GND1
OUT1
V
MODE
OUT1
OUT2
11
C
CIN
IN2
GND2
OUT2
P
P

1997 Aug 14 5
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
FUNCTIONAL DESCRIPTION
The TDA1561Q contains two identical amplifiers with
differential inputs. At low output power (up to output
amplitudes of 3 V (RMS) at VP= 14.4 V), the device
operates as a normal SE amplifier. When a larger output
voltage swing is needed, the circuit switches internally to
BTL operation.
With a sine wave input signal the dissipation of a
conventionalBTL amplifierup to 2 Woutput poweris more
than twice the dissipation of the TDA1561Q (see Fig.9).
In normal use, when the amplifier is driven with music-like
signals, the high (BTL) output power is only needed for a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution,the dissipationof aconventional BTLamplifier
with the same output power is approximately 70% higher
(see Fig.10).
The heatsink has to be designed for use with music
signals. With such a heatsink, the thermal protection will
disable the BTL mode when the junction temperature
exceeds 145 °C. In this case the output power is limited to
5 W per amplifier.
The gain of each amplifier is internally fixed at 32 dB. With
the MODE pin, the device can be switched to the following
modes:
•Standby with low standby current (<50 µA)
•Mute condition, DC adjusted
•On, operation
•SE-only, operation (BTL disabled).
The device is fully protected against short-circuiting of the
output pins to ground and to the supply voltage. It is also
protected against short-circuiting the loudspeaker and
high junction temperatures. In the event of a permanent
short-circuit condition to ground or the supply voltage, the
output stage will be switched off causing a low dissipation.
With permanent short-circuiting of the loudspeaker, the
output stage will be repeatedly switched on and off.
The duty cycle in the ‘on’ condition is low enough to
prevent excessive dissipation.
To avoid plops during switching from ‘mute’ to ‘on’ or from
‘on’ to ‘mute/standby’ while an input signal is present, a
built-in zero-crossing detector allows only switching at
zero input voltage. However, when the supply voltage
drops below 6 V (e.g. engine start), the circuit mutes
immediately avoiding clicks coming from electronic
circuitry preceding the power amplifier.
The voltage of the SE electrolytic capacitor (pin 11) is
always kept at 0.5VPby means of a voltage buffer (see
Fig.1). The value of this capacitor has an important
influence on the output power in SE mode, especially at
low signal frequencies, a high value is recommended to
minimize dissipation at low frequencies.

1997 Aug 14 6
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. The value of Rth(c-h) depends on the application (see Fig.3).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VPsupply voltage operating −18 V
non operating −30 V
load dump; tr> 2.5 ms −50 V
VP(sc) short-circuit safe voltage −18 V
Vrp reverse polarity voltage −6V
I
OSM non-repetitive peak output current −6A
I
ORM repetitive peak output current −4A
P
tot total power dissipation −60 W
Tstg storage temperature −55 +150 °C
Tvj virtual junction temperature −150 °C
Tamb operating ambient temperature −40 −°C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-c) thermal resistance from junction to case see note 1 1.3 K/W
Rth(j-a) thermal resistance from junction to ambient 40 K/W

1997 Aug 14 7
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
Heatsink design
There are two parameters that determine the size of the
heatsink. The first is the rating for the virtual junction
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the
BTL mode.
With a conventional BTL amplifier, the maximum power
dissipation with a music-like signal (at each amplifier) will
be approximately two times 5 W. At a virtual junction
temperature of 150 °C and a maximum ambient
temperature of 60 °C, Rth(vj-c) = 1.3 K/W and
Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink
should be:
Comparedto a conventionalBTLamplifier,theTDA1561Q
has a higher efficiency. The thermal resistance of the
heatsink should be:
150 60–
25×
---------------------- 1.3–0.2–7.5 K/W=
1.7 150 60–
25×
----------------------


1.3–0.2–13.8 K/W=Fig.3 Thermal equivalent resistance network.
handbook, halfpage
3.6 K/W
0.6 K/W
3.6 K/W
virtual junction
OUT 1 OUT 1
case
3.6 K/W
0.6 K/W
3.6 K/W
OUT 2 OUT 2
MGC424
0.1 K/W

1997 Aug 14 8
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
DC CHARACTERISTICS
VP= 14.4 V; Tamb =25°C; measured in Fig.6; unless otherwise specified.
Note
1. The circuit is DC biased at VP= 6 to 18 V and AC operating at VP=8to18V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
VPsupply voltage note 1 6.0 14.4 18.0 V
Iqquiescent current RL=∞−95 150 mA
Istb standby current −150µA
V
Caverage electrolytic capacitor
voltage at pin 11 −7.1 −V
∆VODC output offset voltage on state −−150 mV
mute state −−50 mV
Mode select switch (see Fig.4)
Vms voltage at mode select pin
(pin 3) standby condition 0 −1V
mute condition 2 −3V
on condition (SE/BTL mode) 4 −5.5 V
on condition (SE mode only) 7.5 −VPV
Ims switch current through pin 3 Vms =5V −−40 µA
Protection
Tdis BTL disable temperature −145 −°C
Fig.4 Switching levels of mode select switch.
handbook, halfpage
,,,,,,,
,
,,,,,
,
,,,,,,,
0
MLD216
V
1
2
3
4
5
6
7
8
P
SE Only
,,,,,,,
,,,,,,,
SE/BTL
,,,,,,,
,,,,,,,
,,,,,,,
Standby
Mute

1997 Aug 14 9
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
AC CHARACTERISTICS
VP= 14.4 V; RL=4Ω; C11 = 1000 µF; f = 1 kHz; Tamb =25°C; measured in Fig.6; unless otherwise specified.
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.
2. Frequency response externally fixed (input capacitors determine low frequency roll-off).
3. The SE to BTL switch voltage level depends on VP.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of Rs(see Fig.6)(Vi= 0 V).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pooutput power THD = 1% 15 18 −W
THD = 10% 21 23 −W
EIAJ −36 −W
VP= 13.2 V; THD = 0.5% −14 −W
VP= 13.2 V; THD = 10% −20 −W
THD total harmonic distortion Po= 1 W; f = 1 kHz; note 1 −0.1 −%
Pddissipated power see Figs 9 and 10 W
Bppower bandwidth THD = 1%; Po=−1dB
with respect to 15 W −20 to 15000 −Hz
fro(l) low frequency roll-off −1 dB; note 2 −25 −Hz
fro(h) high frequency roll-off −1 dB 130 −−kHz
Gvclosed loop voltage gain 31 32 33 dB
SVRR supply voltage ripple rejection Rs=0Ω; Vripple = 2 V (p-p)
on; f = 1 kHz 45 60 −dB
mute; f = 1 kHz −90 −dB
standby; f = 100 Hz to 10 kHz 80 −−dB
CMRR common mode rejection ratio Rs=0Ω; f = 1 kHz −80 −dB
Ziinput impedance 45 60 75 kΩ
∆Zimismatch in input impedance −1−%
VSE-BTL SE to BTL switch voltage level note 3 −3−V
Voutoutput voltage-mute (RMS value) Vi= 1 V (RMS) −50 100 µV
Vn(o) noise output voltage on; Rs=0Ω; note 4 −160 300 µV
on; Rs=10kΩ; note 4 −170 −µV
mute; note 5 −20 −µV
α
cs channel separation Rs=0Ω40 60 −dB
∆Gvchannel unbalance −−1dB

1997 Aug 14 10
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
TEST AND APPLICATION INFORMATION
Fig.5 Test diagram.
handbook, full pagewidth
220 nF
470 nF
4
8
9
11
5
6
73
1
2
12
13
10
220 nF
4 Ω3.9 Ω
1000 µF
(16 V)
100
nF
3.9 Ω
10
nF
0.5VP
0.5Rs
MLD223
TDA1561Q
4 Ω3.9 Ω
10 nF
3.9 Ω
100 nF
input 2
input 1
Rs
Rs
1000 µF
16 V 220 nF
IN1
HVP
GND1
OUT1
VP
MODE
OUT1
OUT2
C11
CIN
IN2
GND2
OUT2

1997 Aug 14 11
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
Fig.6 Application diagram.
handbook, full pagewidth
220 nF
100 nF
2 x 220 nF
4
8
9
11
5
6
73
1
2
12
13
power ground
signal ground
10
220 nF
1000 µF
16 V 100 nF
4 Ω3.9 Ω
1000 µF
(16 V)
10
nF
3.9 Ω
100
nF
0.5VP
MLD213
TDA1561Q
4 Ω3.9 Ω
10 nF
3.9 Ω
100 nF
IN1
HVP
GND1
OUT1
VP
MODE
OUT1
OUT2
C11
CIN
IN2
GND2
OUT2
(1)
Rs
Rs
0.5Rs
Connect Boucherot filter to pin 4 respectively pin 10 with the shortest possible connection.

1997 Aug 14 12
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
handbook, full pagewidth
MGK182
Mode
select
gnd
mss
Vp
GND
In1 In2sgnd
Cool Power
m
Out 2Out 1
TDA1561Q
4 ×220 nF
86.36
43.18
Fig.7 PCB layout (component side) for the application of Fig.6.
Dimensions in mm.

1997 Aug 14 13
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
handbook, full pagewidth
MGK183
Mode
gnd
mss
Vp
GND
In2 In1sgnd
m
Out1Out2
86.36
43.18
Fig.8 PCB layout (soldering side) for the application of Fig.6.
Dimensions in mm.

1997 Aug 14 14
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
INTERNAL PIN CONFIGURATIONS
PIN NAME EQUIVALENT CIRCUIT
1,12,13 IN1, CIN, IN2
2HV
P
3 MODE
h
pin 1
pin 12
pin 13
VP
MLD217
handbook, halfpage
MLD218
pin 2
handbook, halfpage
MLD221
pin 3
VP

1997 Aug 14 15
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
5, 9 OUT1, OUT2
6, 8 OUT1, OUT2
11 C11
PIN NAME EQUIVALENT CIRCUIT
handbook, halfpage
MLD220
VP
pins 5, 9
handbook, halfpage
MLD219
VP
pins 6, 8
MLD222
pin 11

1997 Aug 14 16
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
ADDITIONAL APPLICATION INFORMATION
Fig.9 Dissipation; sine wave driven.
handbook, halfpage
010
P
o
(W)
25
0
5
10
15
20
2
Pd
(W)
468
MBH692
(1)
(2)
Input signal 1 kHz, sinusoidal; VP= 14.4 V.
(1) For a conventional BTL amplifier.
(2) For TDA1561Q. Fig.10 Dissipation; pink noise through IEC-268
filter.
handbook, halfpage
010
P
o
(W)
25
0
5
10
15
20
2
Pd
(W)
468
MBH693
(1)
(2)
(1) For a conventional BTL amplifier.
(2) For TDA1561Q.
Fig.11 IEC-268 filter.
430 Ω
input output
330 Ω
3.3
kΩ
3.3
kΩ10 kΩ
91
nF 68 nF
470 nF2.2 µF 2.2 µF
MGC428

1997 Aug 14 17
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
handbook, full pagewidth
220 nF
pink
noise
100 nF
2×
220 nF
4
8
9
11
5
6
73
1
2
12
13
10
220 nF
4 Ω3.9 Ω
1000 µF
(16 V)
10
nF
3.9 Ω
100
nF
1/2VP
on condition
MGC427
TDA1561Q
4 Ω3.9 Ω
10 nF
3.9 Ω
100 nF
IEC-268
FILTER
IN1
HVP
GND1
OUT1
VP
MODE
OUT1
OUT2
C11
CIN
IN2
GND2
OUT2
Fig.12 Test and application diagram for dissipation measurements with a music-like signal (pink noise).
Fig.13 DC output voltage as a function of VP.
handbook, halfpage
08 24
V
P
(V)
VO
(V)
12
0
4
8
16
MBH694
Vms =5V.
Fig.14 Quiescent current as a function of VP.
handbook, halfpage
08 24
V
P
(V)
Iq
(mA)
125
0
25
50
75
100
16
MBH695
Vms = 5 V; RI=∞.

1997 Aug 14 18
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
Fig.15 IPas a function of Vms (pin 3).
handbook, halfpage
02 86
off mute
VMODE (V)
IP
(mA)
160
0
40
80
120
4
MBH696
SE/BTL SE only
VP= 14.4 V; Vin = 0 mV; RI=∞.
Fig.16 Ims as a function of Vms.
handbook, halfpage
02 86
V
MODE (V)
IMODE
(µA)
80
64
0
16
32
48
4
MBH697
Fig.17 Output power as a function of VP.
handbook, halfpage
8.4 10.8 1815.6
(3)
(2)
(1)
VP(V)
Po
(W)
60
0
20
40
13.2
MBH698
Both channels driven.
(1) EIAJ.
(2) THD = 10%.
(3) THD = 1%.
Fig.18 THD + noise as a function of Po.
handbook, halfpage
102
10
1
10−1
10−2
MBH699
10−210−11
THD +N
(%)
10 Po (W) 102
(1)
(2)
(3)
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.

1997 Aug 14 19
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
Fig.19 THD + noise as a function of frequency.
handbook, halfpage
10
1
10
−1
10
−2
MBH700
10 10
2
10
3
10
4
f (Hz)
THD +N
(%)
10
5
(1)
(2)
(1) Po=10W.
(2) Po=1W.
Fig.20 Power bandwidth at THD = 1%.
handbook, halfpage
16
18
20
14
12
10
MBH701
10 102103104f (Hz)
Bp
(W)
105
(1)
(2)
(1) For OUT2.
(2) For OUT1.
Fig.21 Gain as a function of frequency.
handbook, halfpage
32
34
36
30
28
26
MBH702
10 102103104f (Hz)
Gv
(dB)
106
105
Vin =50mV.
Fig.22 SVRR as a function of frequency.
handbook, halfpage
−120
−100
−80
−60
−40
−20
MBH703
10 102103104f (Hz)
SVRR
(dB)
105
on
mute
off
Vripple(p-p) =2V.

1997 Aug 14 20
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
Fig.23 Channel separation as a function of
frequency.
handbook, halfpage
−100
−60
−40
−20
0
MBH704
10 102103104f (Hz)
αcs
(dB)
105
(2)
(1)
(1) Po=1W.
(2) Po=10W.
Fig.24 Mode select circuit.
handbook, halfpage
MBH690
47 µF
10 kΩMODE5 V/40 µA