Texas Instruments bq25606 User manual

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bq25606 PWR772 Evaluation Module
User's Guide
SLUUBL3A–June 2017–Revised October 2017
bq25606 PWR772 Evaluation Module
This user's guide provides detailed testing instructions for the bq25606 evaluation module (EVM). Also
included are descriptions of the necessary equipment, equipment setup, test procedures, the printed-
circuit board layouts, schematics, and the bill of materials (BOM).
Throughout this user's guide, the abbreviations EVM,bq25606EVM,PWR772, and the term evaluation
module are synonymous with the bq25606 evaluation module, unless otherwise noted.
Contents
1 Introduction ................................................................................................................... 2
1.1 EVM Features....................................................................................................... 2
1.2 I/O Descriptions..................................................................................................... 2
2 Test Summary................................................................................................................ 3
2.1 Equipment ........................................................................................................... 3
2.2 Equipment Setup.................................................................................................... 3
2.3 Test Procedure...................................................................................................... 5
3 PCB Layout Guideline....................................................................................................... 6
4 Board Layout ................................................................................................................. 7
5 Schematic..................................................................................................................... 9
6 Bill of Materials ............................................................................................................. 10
List of Figures
1 Original Test Setup for bq25606 EVM.................................................................................... 4
2 bq25606EVM Top Overlay ................................................................................................. 7
3 bq25606EVM Top Solder Mask............................................................................................ 7
4 bq25606EVM Top Layer ................................................................................................... 7
5 bq25606EVM Signal Layer 1 .............................................................................................. 7
6 bq25606EVM Signal Layer 2 .............................................................................................. 7
7 bq25606EVM Bottom Layer ............................................................................................... 7
8 bq25606EVM Bottom Solder Mask........................................................................................ 8
9 bq25606EVM Bottom Overlay ............................................................................................. 8
10 Schematic for bq25606EVM-772 .......................................................................................... 9
List of Tables
1 Device Data Sheets ......................................................................................................... 2
2 EVM Connections............................................................................................................ 2
3 EVM Jumper Connections and Shunt Installation....................................................................... 2
4 Recommended Operating Conditions..................................................................................... 3
5 bq25606EVM-772 BOM................................................................................................... 10
Trademarks
All trademarks are the property of their respective owners.

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1 Introduction
1.1 EVM Features
For detailed features and operation, refer to Table 1 for a list of devices and their data sheets.
Table 1. Device Data Sheets
Device Data Sheet EVM Label Variant
bq25606 SLUSCK6 BQ25606EVM-772 004
The bq25606 evaluation module (EVM) is a standalone charger module without I2C control.
1.2 I/O Descriptions
Table 2 lists the jumper connections available on this EVM.
Table 2. EVM Connections
Jack Description
J1-VAC Input positive terminal
J1-GND Ground Input: negative terminal (ground terminal)
J2-PMID PMID pin connection
J2-GND Ground
J3 Output mini-USB port
J4-SYS Connected to system
J4-GND Ground
J5-BATSNS_ICHG BATSNS or ICHG pin connection
J5-BAT Connected to battery pack positive node
J5-GND Ground
J6 I2C 4-pin connector
J7 USB-TO-GPIO connector (Not populated)
Table 3 lists the EVM jumper connections.
Table 3. EVM Jumper Connections and Shunt Installation
Jack Description bq25606 Setting
JP1 PSEL pin selection Not installed
JP2 CE pin setting: pull low to enable the charge Installed
JP3 OTG pin setting: pull high to enable OTG mode Short OTG to GND
JP4 STAT, PG, CE, INT, and OTG pins pullup source (SYS or
BAT) Short to SYS
JP5 TS pin to GND Not installed
JP6 TS resistor divider pullup source (REGN) connection Installed
JP7 Internal 10 kΩto GND to TS pin Installed
JP8 BATSNS selection Not installed
JP9 QON and VSET pin setting Not installed
JP10 STAT pin setting Installed
JP11 Add SYS cap Not installed
JP12 SDA and PG pin setting Installed
JP13 D+ and PSEL to J3 Not Installed
JP14 D– and PG to J3 Not Installed
JP15 D– and PG pin setting Not installed
JP16 Add VBUS cap Not installed

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Table 3. EVM Jumper Connections and Shunt Installation (continued)
Jack Description bq25606 Setting
JP17 Add PMID cap Not installed
JP18 Add AT cap Not installed
S1 QON control Default open
S2 Switch to short indicator LEDs Default open
Table 4 lists the recommended operating conditions for this EVM.
Table 4. Recommended Operating Conditions
Symbol Description MIN TYP MAX Unit
Supply voltage, VVBUS Input voltage from AC adapter 3.9 5.0 13.5 V
Battery voltage, VBAT Voltage applied at VBAT terminal 0 4.208 4.4 V
IBAT Fast charging current 0 3.0 A
Discharging current through internal MOSFET 6.0 A
Supply current, IIN Maximum input current from AC adapter input 0 3.0 A
2 Test Summary
2.1 Equipment
This section includes a list of supplies required for testing this EVM.
1. Power supply: Power supply #1 (PS#1): a power supply capable of supplying 5 V at 3 A is required.
While this part can handle larger voltage and current, it is not necessary for this procedure.
2. Load #1:
• (4-quadrant supply, constant voltage < 4.5 V) A 0–20 V, 0–5 A, > 30-W system, DC electronic load
and setting as constant voltage load mode
or
• Kepco load: BOP 20–5M, DC 0 to ±20 V, 0 to ±5 A (or higher)
3. Load #2: Use with Boost Mode, VAC to GND load, 10 Ω, 5 W or greater.
4. Meters:
• Six Fluke 75 multimeters, (equivalent or better)
or
• Four equivalent voltage meters and two equivalent current meters. The current meters must be
capable of measuring 5-A+ current
2.2 Equipment Setup
Use the following list to set up the equipment:
1. Set PS#1 for 5-V DC, 3-A current limit and then turn off the supply.
2. Connect the output of PS#1 in series with a current meter (multimeter) to J1 (VAC and GND). It is
recommended to connect one voltage meter across TP24 and TP27 to measure the input current
sensing resistor voltage. The sensing resistor is 10 mΩ.
3. Connect one voltage meter across TP21 (VAC) and TP18 (GND), connect another voltage meter
across TP1 (VBUS) and TP18 (GND).
4. Turn on Load #1, set to constant voltage mode and output to 2.5 V. Turn off (disable) load. Connect
load to J5 (BAT and GND).
5. Connect one voltage meter across TP9 (BAT) and TP17 (GND) to measure the battery voltage and
another voltage meter across TP28 and TP29 to measure the battery current sensing resistor voltage.
The sensing resistor is 10 mΩ. An alternate method is to use the optional current meter in series to
measure the battery current.

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6. Install shunts as shown in Table 3.
Figure 1. Original Test Setup for bq25606 EVM

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2.3 Test Procedure
2.3.1 Charger Mode Verification
1. Enable Load #1 from Section 2.2, Step 4.
2. Measure the voltage across J4 and J5 as follows:
• Measure →V(TP8(SYS), TP17(GND)) = 3.65 V (typical)
• Measure →V(TP9(BAT), TP17(GND)) = 2.5 V (typical)
• Measure →IBAT ( = pre-charge current)
3. Change Load #1 to 3.7 V
• Measure →V(TP8(SYS), TP17(GND)) = 3.8 V (typical)
• Measure →V(TP9(BAT), TP17(GND)) = 3.7 V (typical)
• Measure →IBAT ( = fast charge current)
4. Adjust R10 to change charging current.
5. Adjust R11 to change input current limit.
6. Turn off and disconnect Load #1.
7. Turn off and disconnect PS#1.
2.3.2 Boost Mode Verification
1. Do not install JP3.
2. If the constant voltage load connected from BAT to GND is not a four-quadrant supply (sources
current), remove the load and use the power source disconnected in step 1, set to 3.7 V and 2-A
current limit and connect between BAT and GND.
3. Apply 10 Ω(5 W or greater) across J1 VAC(+) to GND(–).
4. Verify VVBUS to GND since VBUS is the actual boost mode output voltage.
Measure →VVBUS = 5.15 V (Typical)
5. Turn off and disconnect power supply.
6. Remove 10-Ωresistor at VAC.
2.3.3 Helpful Tips
• The leads and cables to the various power supplies, batteries, and loads have resistance. The current
meters also have series resistance. The charger dynamically reduces charge current depending on the
voltage sensed at its VBUS pin (using the VINDPM feature), BAT pin (as part of normal termination),
and TS pin (through its battery temperature monitoring feature via battery thermistor). Therefore,
voltmeters must be used to measure the voltage as close to the IC pins as possible instead of relying
on the digital readouts of the power supply. If a battery thermistor is not available, make sure shunts
JP6 and JP7 are in place.
• When using a source meter that can source and sink current as your battery simulator, TI highly
recommends adding a large (1000+ μF) capacitor at the EVM BAT and GND connectors in order to
prevent oscillations at the BAT pin due to mismatched impedances of the charger output and source
meter input within their respective regulation loop bandwidths. Configuring the source meter for 4-wire
sensing eliminates the need for a separate voltmeter to measure the voltage at the BAT pin.
When using 4-wire sensing, always ensure that the sensing leads are connected in order to prevent
accidental overvoltage by the power leads.
• For precise measurements of charge current and battery regulation near termination, the current meter
in series with the battery or battery simulator should not be set to auto-range and may need be
removed entirely. An alternate method for measuring charge current is to either use an oscilloscope
with Hall effect current probe or place a 1% or better, thermally capable (for example, 0.010 Ωin 1210
or larger footprint) resistor in series between the BAT pin and battery and measure the voltage across
that resistor. The bq25606EVM has the sensing resistors onboard.

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3 PCB Layout Guideline
Minimize the switching node rise and fall times for minimum switching loss. Proper layout of the
components minimizing high-frequency current path loop is important to prevent electrical and magnetic
field radiation and high-frequency resonant problems. This PCB layout priority list must be followed in the
order presented for proper layout:
1. Place the input capacitor as close as possible to the PMID pin and GND pin connections and use the
shortest copper trace connection or GND plane.
2. Place the inductor input terminal as close to the SW pin as possible. Minimize the copper area of this
trace to lower electrical and magnetic field radiation but make the trace wide enough to carry the
charging current. Do not use multiple layers in parallel for this connection. Minimize parasitic
capacitance from this area to any other trace or plane.
3. Put an output capacitor near to the inductor and the IC. Tie ground connections to the IC ground with a
short copper trace connection or GND plane.
4. Route analog ground separately from the power ground. Connect analog ground and connect power
ground separately. Connect analog ground and power ground together using a power pad as the
single ground connection point or use a 0-Ωresistor to tie analog ground to power ground.
5. Use a single ground connection to tie the charger power ground to the charger analog ground just
beneath the IC. Use ground copper pour but avoid power pins to reduce inductive and capacitive noise
coupling.
6. Place decoupling capacitors next to the IC pins and make the trace connection as short as possible.
7. It is critical that the exposed power pad on the backside of the IC package be soldered to the PCB
ground. Ensure that there are sufficient thermal vias directly under the IC connecting to the ground
plane on the other layers.
8. The via size and number should be enough for a given current path.
See the EVM design for the recommended component placement with trace and via locations. For the
QFN information, see Quad Flatpack No-Lead Logic Packages and QFN/SON PCB Attachment.

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4 Board Layout
Figure 2 through Figure 9 show the EVM PCB layout images.
Figure 2. bq25606EVM Top Overlay Figure 3. bq25606EVM Top Solder Mask
Figure 4. bq25606EVM Top Layer Figure 5. bq25606EVM Signal Layer 1

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Figure 6. bq25606EVM Signal Layer 2 Figure 7. bq25606EVM Bottom Layer
Figure 8. bq25606EVM Bottom Solder Mask Figure 9. bq25606EVM Bottom Overlay

1 2
3 4
5 6
7 8
9 10
J7
DNP
0
R21
DNP
200
R19
DNP
200
R20
DNP SDA_/PG
SCL_OTG
PGND
VBUS 1
D- 2
D+ 3
ID 4
GND 5
6 7 8
11 10
9
J3
VAC
PGND
PGND
4
1
2
3
J6
PGND
SCL_OTG
SDA_/PG
/CE
D+_PSEL
PGND
VAC
GND
PMID
GND
Vbus: 3.9V to 14V
1000pF
C2
DNP
2.21kR4
10.0k
R5DNP
JP3
/CE
AGND
AGND
TP2TP1
1µF
C1
TP3 TP4 TP7
13V
D1
DNP
2.21k
R17
30.1k
R23
10
R26
DNP
0.1µF
C11
DNP
System
GND
GND
PGND
Battery
PGND
PULL-UP
TS
GND
10µF
C9
10µF
C10
10µF
C19
DNP
20V
D3
DNP
ICHG: 0 ~ 2.5A
40V
D2
DNP
0.047µF
C7
0
R25
1
2
3
J5
TP6
BATSNS_ICHG
PGND
1µH
L1
DNP
4.7k
R15
DNP
AGND
S1
DNP
STAT_/IMON
REGN
CSD17571Q2
3
5,6,8 4,7
1,2,
Q1
DNP
0
R2
DNP
PGND
JP16
DNP
JP17
DNP
PGND
PGND
1µF
C18
DNP
SCL_OTG
SDA_/PG
VBUS PMID
VAC
VAC
SDA_/PG
D+_PSEL
D-_/PG
10k ohm
R10
PGND
/CE
10K
TS
20V
D6
DNP
J2
1
2
3
JP1
AGND
10.0k
R6
REGN
D+_PSEL
JP2
/CE
AGND
PMID
10µF
C3
DNP
10µF
C17
DNP
10µF
C4
1000pF
C5
DNP
4.7µF
C6
AGND
PMID
/QON_VSET
/QON_VSET
JP5
10.0k
R24
5.23k
R22
JP6
REGN
JP7
REGN
110pF
C8
DNP
INT_ILIM
AGND
1
2 3 4 5
SW1
DNP
PGND
1
2
3
JP4
PULL-UP
JP18
DNP
JP11
DNP
1000pF
C12
DNP
10µF
C13
4.7µF
C20
DNP
4.7µF
C14
DNP
NT1
Net-Tie
0
R16
DNP
Green
D4
REGN
RTOP TS
PSEL
GND
REGN
/CE
GND
GND
OTG
TP9
TP8
SYS
BAT
BAT
SYS
TP5
REGN BATSNS_ICHG INT_ILIMSCL_OTG
TP10 TP11
TS
TS
TP12
DNP
TP13
D-_/PG
TP14 TP15
/QON_VSETD+_PSEL
TP16
/CE
TP17 TP18 TP19 TP20
AGND
PGND
BAT
SYS
PULLUP
AGND
10k ohm
R11
PULL-UP
1
2 3 4 5
SW3
DNP
1
2 3 4 5
SW4
DNP
1
2 3 4 5
SW2
DNP
BAT
SYS
SW
PMID
JP13
SCL_OTG
1
2
3
JP9
AGND
/QON_VSET
1µF
C15
0.1µF
C16
AGND
0.005
R1
STAT_/IMON
STAT_/IMON
BATSNS_ICHG
BTST
JP10
2.21k
R7
Green
D5
JP12
SDA_/PG
TP21
VAC
0
R27
D-_/PG
10.0k
R29
PGND
D-_/PG
VBUS
AGND
JP14
JP15
DNP
10.0k
R13
DNP PULL-UP
1 2
4 3
S2
10.0k
R14
TP22 TP23
0.01
R31
158
R12
1.00k
R3
221
R8
2.80k
R9
1
2
3
JP8
DNP BATSNS_ICHG
BAT
BATCON
0.01
R30
40V
D7
DNP
TP24
0.01
R18
TP27
TP25 TP26
TP28
TP29
J1
J4
1µH
L2
NC
2
BAT 13
BAT 14
ICHG 10
BTST 21
PAD 25
GND 17
GND 18
PMID
23
D+
3
REGN 22
OTG
6
PG
7
STAT 5
SW 19
SW 20
SYS 15
SYS 16
TS 11
VBUS
24
VAC
1
CE
9ILIM 8
D-
4
VSET 12
U1
BQ25606RGER
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5 Schematic
Figure 10 shows the schematic for the bq25606 EVM.
Figure 10. Schematic for bq25606EVM-772

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6 Bill of Materials
Table 5 lists the bq25606EVM-772 BOM.
Table 5. bq25606EVM-772 BOM
Designator Qty Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
!PCB 1 Printed circuit board PWR772 Any
C1 1 1 µF Capacitor, ceramic, 1 µF, 35 V, ± 10%, X5R, 0603 0603 GMK107BJ105KA-T Taiyo Yuden
C4 1 10 µF Capacitor, ceramic, 10 µF, 25 V, ± 10%, X7S, 0805 0805 GRM21BC71E106KE11L Murata
C6 1 4.7 µF Capacitor, ceramic, 4.7 µF, 16 V, ± 10%, X5R, 0603 0603 GRM188R61C475KAAJ Murata
C7 1 0.047
µF Capacitor, ceramic, 0.047 µF, 25 V, ± 10%, X7R, 0402 0402 GRM155R71E473KA88D Murata
C9, C10, C13 3 10 µF Capacitor, ceramic, 10 µF, 10 V, ± 10%, X7R, 0805 0805 GRM21BR71A106KE51L Murata
C15 1 1 µF Capacitor, ceramic, 1 µF, 25 V, ± 10%, X7R, 0805 0805 GRM219R71E105KA88D Murata
C16 1 0.1 µF Capacitor, ceramic, 0.1 µF, 25 V, ± 10%, X7R, 0402 0402 GRM155R71E104KE14D Murata
D4, D5 2 Green LED, Green, SMD 1.6 × 0.8 × 0.8 mm LTST-C190GKT Lite-On
J1, J2, J4 3 Connector Terminal Block, 2 POS, 3.81 mm, TH 2 POS Terminal Block 1727010 Phoenix Contact
J3 1 Connector, Receptacle, Micro-USB Type B, R/A, Bottom Mount
SMT 7.5 × 2.45 × 5 mm 0473460001 Molex
J5 1 Terminal Block Receptacle, 3 × 1, 3.81 mm, R/A, TH Term Block, 3 pos 1727023 Phoenix Contact
J6 1 Header (friction lock), 100 mil, 4x1, R/A, TH 4 × 1 R/A Header 22-05-3041 Molex
JP1, JP4, JP9 3 Header, 100 mil, 3 × 1, Tin, TH Header, 3 PIN, 100 mil, Tin PEC03SAAN Sullins Connector
Solutions
JP2, JP3, JP5, JP6, JP7,
JP10, JP12, JP13, JP14 9 Header, 100 mil, 2 × 1, Tin, TH Header, 2 PIN, 100 mil, Tin PEC02SAAN Sullins Connector Solutions
L2 1 1 µH Inductor, 1 µH, 3.2 A, 0.028 Ω, SMD 2.5 × 2 mm MPIM252010F1R0M-LF Microgate
LBL1 1 Thermal Transfer Printable Labels, 0.650" W × 0.200" H - 10,000
per roll PCB Label 0.650" H × 0.200" WTHT-14-423-10 Brady
R1 1 0.005 Resistor, 0.005, 1%, 0.25 W, AEC-Q200 Grade 1, 0603 0603 ERJ3LWFR005V Panasonic
R3 1 1.00 k Resistor, 1.00 k, 1%, 0.063 W, 0402 0402 CRCW04021K00FKED Vishay-Dale
R4, R7, R17 3 2.21 k Resistor, 2.21 k, 1%, 0.063 W, 0402 0402 CRCW04022K21FKED Vishay-Dale
R6, R14, R24, R29 4 10.0 k Resistor, 10.0 k, 1%, 0.063 W, 0402 0402 CRCW040210K0FKED Vishay-Dale
R8 1 221 Resistor, 221, 1%, 0.063 W, 0402 0402 CRCW0402221RFKED Vishay-Dale
R9 1 2.80 k Resistor, 2.80 k, 1%, 0.063 W, 0402 0402 CRCW04022K80FKED Vishay-Dale
R10, R11 2 10 kΩTrimmer, 10 kΩ, 0.25W, TH 4.5 × 8 × 6.7 mm 3266W-1-103LF Bourns
R12 1 158 Resistor, 158, 1%, 0.063 W, 0402 0402 CRCW0402158RFKED Vishay-Dale
R18, R30, R31 3 0.01 Resistor, 0.01, 1%, 1 W, 2010 2010 WSL2010R0100FEA18 Vishay-Dale
R22 1 5.23 k Resistor, 5.23 k, 1%, 0.063 W, 0402 0402 CRCW04025K23FKED Vishay-Dale
R23 1 30.1 k Resistor, 30.1 k, 1%, 0.063 W, 0402 0402 CRCW040230K1FKED Vishay-Dale
R25, R27 2 0 Resistor, 0, 5%, 0.063 W, 0402 0402 CRCW04020000Z0ED Vishay-Dale
S2 1 Switch, SPST, 2 POS, 25 mA, 24 VDC, SMD 3.71 × 5.8 mm 218-2LPST CTS Electrocomponents
SH-JP2, SH-JP3, SH-
JP4, SH-JP6, SH-JP7,
SH-JP10, SH-JP12, SH-
JP13, SH-JP14
9 1 × 2 Shunt, 100 mil, Gold plated, Black Shunt 969102-0000-DA 3M SNT-100-BK-G Samtec

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Table 5. bq25606EVM-772 BOM (continued)
Designator Qty Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
TP1, TP2 2 Test Point, Miniature, Red, TH Red Miniature Testpoint 5000 Keystone
TP3, TP4, TP6, TP7,
TP10, TP11, TP13, TP14,
TP15, TP16, TP21, TP24,
TP25, TP26, TP27, TP28,
TP29
17 Test Point, Miniature, White, TH White Miniature Testpoint 5002 Keystone
TP5, TP8 2 Test Point, Miniature, Orange, TH Orange Miniature Testpoint 5003 Keystone
TP9 1 Test Point, Miniature, Yellow, TH Yellow Miniature Testpoint 5004 Keystone
TP17, TP18, TP19, TP20,
TP22, TP23 6 Test Point, Compact, SMT Testpoint_Keystone_Compact 5016 Keystone
U1 1 BQ25606RGER, RGE0024H (VQFN-24) RGE0024H bq25606RGER Texas Instruments bq25606RGET Texas Instruments
C2, C5, C12 0 1000
pF Capacitor, ceramic, 1000 pF, 50 V, ± 5%, C0G/NP0, 0402 0402 GRM1555C1H102JA01D Murata
C3, C17 0 10 µF Capacitor, ceramic, 10 µF, 25 V, ± 10%, X5R, 0805 0805 GRM21BR61E106KA73L Murata
C8 0 110 pF Capacitor, ceramic, 110 pF, 25 V, ± 5%, C0G/NP0, 0402 0402 GRM1555C1E111JA01D Murata
C11 0 0.1 µF Capacitor, ceramic, 0.1 µF, 25 V, ± 20%, X7R, 0402 0402 C1005X7R1E104M050BB TDK
C14, C20 0 4.7 µF Capacitor, ceramic, 4.7 µF, 16 V, ± 10%, X5R, 0603 0603 GRM188R61C475KAAJ Murata
C18 0 1 µF Capacitor, ceramic, 1 µF, 35 V, ± 10%, X5R, 0603 0603 GMK107BJ105KA-T Taiyo Yuden
C19 0 10 µF Capacitor, ceramic, 10 µF, 10 V, ± 10%, X7R, 0805 0805 GRM21BR71A106KE51L Murata
D1 0 13 V Diode, TVS, Uni, 13 V, W, SOD-123W SOD-123W PTVS13VS1UR,115 NXP Semiconductor
D2, D7 0 40 V Diode, Schottky, 40 V, 0.38 A, SOD-523 SOD-523 ZLLS350TA Diodes Inc.
D3, D6 0 20 V Diode, Schottky, 20 V, 1 A, 152AD 152AD NSR10F20NXT5G ON Semiconductor
FID1, FID2, FID3, FID4,
FID5, FID6 0 Fiducial mark. There is nothing to buy or mount. N/A N/A N/A
H1, H2, H3, H4 0 Machine Screw, Round, #4 - 40 × 1/4, Nylon, Philips panhead Screw NY PMS 440 0025 PH BampersandF Fastener
Supply - -
H5, H6, H7, H8 0 Standoff, Hex, 0.5"L #4-40 Nylon Standoff 1902C Keystone - -
J7 0 Header (shrouded), 100 mil, 5x2, High-Temperature, Gold, TH 5 × 2 Shrouded header N2510-6002-RB 3M
JP8 0 Header, 100 mil, 3 × 1, Tin, TH Header, 3 PIN, 100 mil, Tin PEC03SAAN Sullins Connector
Solutions
JP11, JP15, JP16, JP17,
JP18 0 Header, 100 mil, 2 × 1, Tin, TH Header, 2 PIN, 100 mil, Tin PEC02SAAN Sullins Connector Solutions
L1 0 1 uH Inductor, Wirewound, 1 µH, 4 A, 0.041 Ω, SMD 4.06 × 4.06 mm 74437321010 Wurth Elektronik
Q1 0 30 V MOSFET, N-CH, 30 V, 22 A, DQK0006C (WSON-6) DQK0006C CSD17571Q2 Texas Instruments
R2, R16, R21 0 0 Resistor, 0, 5%, 0.063 W, 0402 0402 CRCW04020000Z0ED Vishay-Dale
R5, R13 0 10.0 k Resistor, 10.0 k, 1%, 0.063 W, 0402 0402 CRCW040210K0FKED Vishay-Dale
R15 0 4.7 k Resistor, 4.7 k, 5%, 0.063 W, 0402 0402 CRCW04024K70JNED Vishay-Dale
R19, R20 0 200 Resistor, 200, 1%, 0.063 W, 0402 0402 CRCW0402200RFKED Vishay-Dale
R26 0 10 Resistor, 10, 5%, 0.063 W, 0402 0402 CRCW040210R0JNED Vishay-Dale
S1 0 Switch, Normally open, 2.3-N force, 200-k operations, SMD KSR KSR221GLFS CampersandK
Components

Bill of Materials www.ti.com
12 SLUUBL3A–June 2017–Revised October 2017
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Copyright © 2017, Texas Instruments Incorporated
bq25606 PWR772 Evaluation Module
Table 5. bq25606EVM-772 BOM (continued)
Designator Qty Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
SH-JP1, SH-JP5, SH-
JP8, SH-JP9, SH-JP11,
SH-JP15, SH-JP16, SH-
JP17, SH-JP18
0 1 × 2 Shunt, 100-mil, Gold plated, Black Shunt 969102-0000-DA 3M SNT-100-BK-G Samtec
SW1, SW2, SW3, SW4 0 Compact Probe Tip Circuit Board Test Points, TH, 25 per TH Scope Probe 131-5031-00 Tektronix
TP12 0 Test Point, Miniature, White, TH White Miniature Testpoint 5002 Keystone

www.ti.com Revision History
13
SLUUBL3A–June 2017–Revised October 2017
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Revision History
Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from June 2, 2017 to September 30, 2017 ....................................................................................................... Page
• Changed Schematic for bq25606EVM-772............................................................................................ 9
• Changed bq25606EVM-772 BOM..................................................................................................... 10

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