Cypress Semiconductor Perform CY62136EV30 User manual

2-Mbit (128K x 16) Static RAM
CY62136EV30
MoBL®
Cypress Semiconductor Corporation • 198ChampionCourt • San Jose,CA 95134-1709 • 408-943-2600
Document #: 38-05569 Rev. *B Revised January 6, 2006
Features
• Very high speed: 45 ns
• Wide voltage range: 2.20V–3.60V
• Pin-compatible with CY62136CV30
• Ultra low standby power
— Typical standby current: 1µA
— Maximum standby current: 7µA
• Ultra-low active power
— Typical active current: 2 mA @ f = 1 MHz
• Easy memory expansion with CE, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Offered in a Pb-free 48-ball VFBGA and 44-pin TSOP II
packages
Functional Description[1]
The CY62136EV30 is a high-performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 80% when addresses are not
toggling. The device can also be put into standby mode
reducing power consumption by more than 99% when
deselected (CE HIGH). The input/output pins (I/O0through
I/O15) are placed in a high-impedance state when: deselected
(CE HIGH), outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),
or during a write operation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0through I/O7), is
written into the location specified on the address pins (A0
through A16). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8through I/O15) is written into the location
specified on the address pins (A0through A16).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O0to I/O7. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O8to I/O15. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Logic Block Diagram
128K x 16
RAM Array I/O0–I/O7
ROW DECODER
A8
A7
A6
A5
A2
COLUMN DECODER
A11
A12 A13
A14
A15
SENSE AMPS
DATA IN DRIVERS
OE
A4
A3I/O8–I/O15
CE
WE
BLE
BHE
A16
A0
A1
A9
A10
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CY62136EV30
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Document #: 38-05569 Rev. *B Page 2 of 12
Notes:
2. NC pins are not connected on the die.
3. Pins D3, H1, G2, and H6 in the BGA package are address expansion pins for 4 Mbit, 8 Mbit, 16 Mbit and 32 Mbit, respectively.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA= 25°C.
Pin Configuration[2, 3]
VFBGA (Top View) 44 TSOP II (Top View)
Product Portfolio[4]
Product VCC Range (V) Speed (ns)
Power Dissipation
Operating ICC (mA)
Standby ISB2 (µA)f = 1MHz f = fmax
Min. Typ.[4] Max. Typ.[4] Max. Typ.[4] Max. Typ.[4] Max.
CY62136EV30LL 2.2 3.0 3.6 45 2 2.5 15 20 1 7
WE
A11
A10
A6
A0
A3CE
I/O10
I/O8
I/O9
A4
A5
I/O11
I/O13
I/O12
I/O14
I/O15
VSS
A9
A8
OE
Vss
A7
I/O0
BHE
NC
NC
A2
A1
BLE
VCC
I/O2
I/O1
I/O3
I/O4
I/O5I/O6
I/O7
A15 A14
A13
A12
NC
NC NC
3
26
5
4
1
D
E
B
A
C
F
G
H
A16
NC
Vcc
WE
1
2
3
4
5
6
7
8
9
10
11
14 31
32
36
35
34
33
37
40
39
38
12
13
41
44
43
42
16
15 29
30
VCC
A15
A14
A13
A4
A3
OE
VSS
A5
I/O15
A2
CE
I/O2
I/O0
I/O1
BHE
A1
A0
18
17
20
19
I/O3
27
28
25
26
22
21 23
24
VSS
I/O6
I/O4
I/O5
I/O7
A6
A7
BLE
VCC
I/O14
I/O13
I/O12
I/O11
I/O10
I/O9
I/O8
A8
A9
A10
A11
A12 NC
NC
A16
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CY62136EV30
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Document #: 38-05569 Rev. *B Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied ...........................................–55°C to + 125°C
Supply Voltage to Ground
Potential ..............................–0.3V to 3.9V (VCC MAX + 0.3V)
DC Voltage Applied to Outputs
in High-Z State[5,6]................–0.3V to 3.9V (VCC MAX + 0.3V)
DC Input Voltage[5,6]............ –0.3V to 3.9V (VCC MAX + 0.3V)
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range[7]
Device Range Ambient Temperature VCC[7]
CY62136EV30LL Industrial –40°Cto+85°C 2.2V - 3.6V
Electrical Characteristics Over the Operating Range [5, 6, 7]
Parameter Description Test Conditions
45 ns
UnitMin. Typ.[4] Max.
VOH Output HIGH
Voltage IOH = –0.1 mA VCC = 2.20V 2.0 V
IOH = –1.0 mA VCC = 2.70V 2.4 V
VOL Output LOW
Voltage IOL = 0.1 mA VCC = 2.20V 0.4 V
IOL = 2.1mA VCC = 2.70V 0.4 V
VIH Input HIGH Voltage VCC = 2.2V to 2.7V 1.8 VCC + 0.3 V
VCC= 2.7V to 3.6V 2.2 VCC + 0.3 V
VIL Input LOW Voltage VCC = 2.2V to 2.7V –0.3 0.6 V
VCC= 2.7V to 3.6V –0.3 0.8 V
IIX Input Leakage
Current GND < VI< VCC –1 +1 µA
IOZ Output Leakage
Current GND < VO <VCC, Output Disabled –1 +1 µA
ICC VCC Operating
Supply Current f = fMAX = 1/tRC VCC = VCCmax, IOUT = 0 mA CMOS levels 15 20 mA
f = 1 MHz 2 2.5
ISB1 Automatic CE
Power-down
Current — CMOS
Inputs
CE > VCC−0.2V,
VIN>VCC–0.2V, VIN<0.2V)
f = fMAX (Address and Data Only),
f = 0 (OE, and WE),
VCC = 3.60V
17µA
ISB2 Automatic CE
Power-down
Current — CMOS
Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V, f = 0,
VCC = 3.60V
17µA
Capacitance (for all packages)[8]
Parameter Description Test Conditions Max. Unit
CIN Input Capacitance TA= 25°C, f = 1 MHz,
VCC = VCC(typ) 10 pF
COUT Output Capacitance 10 pF
Notes:
5. VIL(min.) = –2.0V for pulse durations less than 20 ns.
6. VIH(max)=VCC+0.75V for pulse durations less than 20ns.
7. Full Device AC operation assumes a 100 µs ramp time from 0 to Vcc(min) and 200 µs wait time after VCC stabilization.
8. Tested initially and after any design or process changes that may affect these parameters.
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Document #: 38-05569 Rev. *B Page 4 of 12
Thermal Resistance[8]
Parameter Description Test Conditions VFBGA Package TSOP II Package Unit
ΘJA Thermal Resistance
(Junction to Ambient)[8] Still Air, soldered on a 3 × 4.5 inch, two-layer printed circuit board 75 77 °C/W
ΘJC Thermal Resistance
(Junction to Case)[8] 10 13 °C/W
AC Test Loads and Waveforms
Parameters 2.50V 3.0V Unit
R1 16667 1103 Ω
R2 15385 1554 Ω
RTH 8000 645 Ω
VTH 1.20 1.75 V
Data Retention Characteristics (Over the Operating Range)[8, 9]
Parameter Description Conditions Min. Typ.[4] Max. Unit
VDR VCC for Data Retention 1.0 V
ICCDR Data Retention Current VCC= 1.0V
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V
0.8 3 µA
tCDR[8] Chip Deselect to Data
Retention Time 0ns
tR[9] Operation Recovery
Time tRC ns
VCC
VCC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND 90%
10% 90%
10%
Rise Time = 1 V/ns Fall Time = 1 V/ns
OUTPUT VTH
Equivalent to: THÉVENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1
Data Retention Waveform
Notes:
9. Full device operation requires linear VCC ramp from VDR to VCC(min.) >100 µs or stable at VCC(min.) >100 µs.
VCC(min)
VCC(min)
tCDR
VDR >1.0 V
DATA RETENTION MODE
tR
VCC
CE
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Document #: 38-05569 Rev. *B Page 5 of 12
Switching Characteristics Over the Operating Range [10, 11, 12, 13]
Parameter Description
45 ns
UnitMin. Max.
Read Cycle
tRC Read Cycle Time 45 ns
tAA Address to Data Valid 45 ns
tOHA Data Hold from Address Change 10 ns
tACE CE LOW to Data Valid 45 ns
tDOE OE LOW to Data Valid 22 ns
tLZOE OE LOW to LOW Z[11] 5ns
tHZOE OE HIGH to High Z[11, 12] 18 ns
tLZCE CE LOW to Low Z[11] 10 ns
tHZCE CE HIGH to High Z[11, 12] 18 ns
tPU CE LOW to Power-Up 0 ns
tPD CE HIGH to Power-Down 45 ns
tDBE BLE/BHE LOW to Data Valid 22 ns
tLZBE BLE/BHE LOW to Low Z[11] 5ns
tHZBE BLE/BHE HIGH to HIGH Z[11, 12] 18 ns
Write Cycle[13]
tWC Write Cycle Time 45 ns
tSCE CE LOW to Write End 35 ns
tAW Address Set-Up to Write End 35 ns
tHA Address Hold from Write End 0 ns
tSA Address Set-Up to Write Start 0 ns
tPWE WE Pulse Width 35 ns
tBW BLE/BHE LOW to Write End 35 ns
tSD Data Set-Up to Write End 25 ns
tHD Data Hold from Write End 0 ns
tHZWE WE LOW to High-Z[11, 12] 18 ns
tLZWE WE HIGH to Low-Z[11] 10 ns
Notes:
10.Test conditions for all parameters other than tri-state parameters assume signal transition time of3 ns (1V/ns) or less, timing reference levels of VCC(typ)/2, input
pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section.
11.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any
given device.
12.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedence state.
13.The internal Write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates
the write.
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Document #: 38-05569 Rev. *B Page 6 of 12
Switching Waveforms [14, 15]
Read Cycle 1 (Address Transition Controlled)[14, 15]
Read Cycle No. 2 (OE Controlled)[15, 16]
Notes:
14.The device is continuously selected. OE, CE= VIL, BHE and/or BLE = VIL.
15.WE is HIGH for read cycle.
16.Address valid prior to or coincident with CEand BHE, BLE transition LOW.
ADDRESS
DATA OUT PREVIOUS DATA VALID DATA VALID
tRC
tAA
tOHA
50%
50%
DATA VALID
t
RC
t
ACE
t
LZBE
t
LZCE
t
PU
DATA OUT HIGH IMPEDANCE IMPEDANCE
I
CC
I
SB
t
HZOE
t
HZCE
t
PD
OE
CE
HIGH
V
CC
SUPPLY
CURRENT
t
HZBE
BHE/BLE t
LZOE
ADDRESS
t
DBE
t
DOE
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Document #: 38-05569 Rev. *B Page 7 of 12
Write Cycle No. 1 (WE Controlled)[13, 17, 18]
Write Cycle No. 2 (CE Controlled)[13, 17, 18]
Notes:
17.Data I/O is high impedance if OE = VIH.
18.If CE goes HIGH simultaneously with WE = VIH, the output remains in a high-impedance state.
19.During this period, the I/Os are in output state and input signals should not be applied.
Switching Waveforms (continued)[14, 15]
tHD
tSD
tPWE tSA
tHA tAW
tWC
DATA I/O
ADDRESS
CE
WE
OE
tHZOE
DATAIN
NOTE19
BHE/BLE tBW
tSCE
tHD
tSD
tPWE
tHA tAW
tSCE
tWC
tHZOE
DATAIN
CE
ADDRESS
WE
DATA I/O
OE
NOTE 19
BHE/BLE tBW
tSA
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CY62136EV30
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Document #: 38-05569 Rev. *B Page 8 of 12
Write Cycle No. 3 (WE Controlled, OE LOW)[18]
Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[18]
Switching Waveforms (continued)[14, 15]
DATAIN
tHD
tSD
tLZWE
tPWE tSA
tHA tAW
tSCE
tWC
tHZWE
CE
ADDRESS
WE
DATAI/O NOTE 19
tBW
BHE/BLE
DATA I/O
ADDRESS
t
SD
t
SA
t
HA
t
AW
tWC
CE
WE
DATA
IN
NOTE 19
t
BW
BHE/BLE
tSCE
t
PWE
tHZWE tHD
tLZWE
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CY62136EV30
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Document #: 38-05569 Rev. *B Page 9 of 12
Truth Table
CE WE OE BHE BLE Inputs/Outputs Mode Power
H X X X X High Z Deselect/Power-down Standby (ISB)
L X X H H High Z Output Disabled Active (ICC)
L H L L L Data Out (I/OO–I/O15) Read Active (ICC)
L H L H L Data Out (I/OO–I/O7);
I/O8–I/O15 in High Z Read Active (ICC)
L H L L H Data Out (I/O8–I/O15);
I/O0–I/O7 in High Z Read Active (ICC)
L H H L L High Z Output Disabled Active (ICC)
L H H H L High Z Output Disabled Active (ICC)
L H H L H High Z Output Disabled Active (ICC)
L L X L L Data In (I/OO–I/O15) Write Active (ICC)
L L X H L Data In (I/OO–I/O7);
I/O8–I/O15 in High Z Write Active (ICC)
L L X L H Data In (I/O8–I/O15);
I/O0–I/O7 in High Z Write Active (ICC)
Ordering Information
Speed
(ns) Ordering Code Package Diagram Package Type Operating Range
45 CY62136EV30LL-45BVXI 51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free) Industrial
CY62136EV30LL-45ZSXI 51-85087 44-pin Thin Small Outline Package II (Pb-free)
Please contact your local Cypress sales representative for availability of other parts
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Document #: 38-05569 Rev. *B Page 10 of 12
Package Diagrams
A
1
A1 CORNER
0.75
0.75
Ø0.30±0.05(48X)
Ø0.25 M C A B
Ø0.05 M C
B
A
0.15(4X)
0.21±0.05
1.00 MAX
C
SEATING PLANE
0.55 MAX.
0.25 C
0.10 C
A1 CORNER
TOP VIEW BOTTOM VIEW
234
3.75
5.25
B
C
D
E
F
G
H
65
465231
D
H
F
G
E
C
B
A
6.00±0.10
8.00±0.10
A
8.00±0.10
6.00±0.10
B
1.875
2.625
0.26 MAX.
48-pin VFBGA (6 x 8 x 1 mm) (51-85150)
51-85150-*D
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CY62136EV30
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Document #: 38-05569 Rev. *B Page 11 of 12
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All product and company
names mentioned in this document may be the trademarks of their respective holders.
Package Diagrams (continued)
44-pin TSOP II (51-85087)
51-85087-*A
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Document #: 38-05569 Rev. *B Page 12 of 12
Document History Page
Document Title: CY62136EV30 MoBL®2-Mbit (128K x 16) Static RAM
Document Number: 38-05569
REV. ECN NO. Issue Date Orig. of Change Description of Change
** 237432 See ECN AJU New Data Sheet
*A 419988 See ECN RXU Converted from Advanced Information to Final.
Changed the address of Cypress Semiconductor Corporation on Page #1
from “3901 North First Street” to “198 Champion Court”
Removed 35ns Speed Bin
Removed “L” version of CY62136EV30
Changed ICC (Max) value from 2 mA to 2.5 mA and ICC (Typ) value from
1.5 mA to 2 mA at f=1 MHz
Changed ICC (Typ) value from 12 mA to 15 mA at f = fmax
Changed ISB1 and ISB2 Typ. values from 0.7 µA to 1 µA and Max. values from
2.5 µA to 7 µA.
Changed the AC test load capacitance from 50pF to 30pF on Page# 4
Changed VDR from 1.5V to 1V on Page# 4.
Changed ICCDR from 2.5 µA to 3 µA.
Added ICCDR typical value.
Changed tOHA , tLZCE and tLZWE from 6 ns to 10 ns
Changed tLZBE from 6 ns to 5 ns
Changed tLZOE from 3 ns to 5 ns
Changed tHZOE, tHZCE, tHZBE and tHZWE from 15 ns to 18 ns
Changed tSCE,tAW and tBW from 40 ns to 35 ns
Changed tPWE from 30 ns to 35 ns
Changed tSD from 20 ns to 25 ns
Corrected typo in the Truth Table on Page# 9
Updated the package diagram 48-pin VFBGA from *B to *D
Updated the ordering Information table and replaced the Package Name
column with Package Diagram.
*B 427817 See ECN NXR Minor change: Moved datasheet to external web
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