Fairchild GreenBridge FDMQ8203 User manual

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© 2013 Fairchild Semiconductor Corporation FEBFDMQ8203_90W • Rev. 1.0.1
User Guide for
GreenBridge™Evaluation Kit
for Power Over Ethernet 90 W Active
Clamp Forward DC-DC Converter
MLP 4.5x5 GreenBridge™
Power 33/56 Shielded Gate PowerTrench® MOSFET
Featured Fairchild Products:
FDMQ8203
FDMS86200
FDMS8025S
FDMC2523P
Direct questions or comments
about this evaluation board to:
“Worldwide Direct Support”
Fairchild Semiconductor.com

© 2013 Fairchild Semiconductor Corporation 2 FEBFDMQ8203_90W • Rev. 1.0.1
Table of Contents
1. Introduction............................................................................................................................... 3
1.1. Description......................................................................................................................3
2. General Evaluation Board Specifications................................................................................. 4
3. Photographs............................................................................................................................... 5
4. Setup and Test Procedure.......................................................................................................... 6
4.1. Hardware Connector Description....................................................................................6
5. Performance of Evaluation Board............................................................................................. 7
6. Printed Circuit Board.............................................................................................................. 10
7. Schematic................................................................................................................................ 11
8. Bill of Materials...................................................................................................................... 13
9. Revision History ..................................................................................................................... 15

© 2013 Fairchild Semiconductor Corporation 3 FEBFDMQ8203_90W • Rev. 1.0.1
This user guide supports the evaluation kit for GreenBridge™ and shielded gate
PowerTrench®MOSFET applying to a Power Device (PD) of Power over Ethernet
(PoE). It should be used in conjunction with their datasheets as well as Fairchild’s
application notes and technical support team. Please visit Fairchild’s website at
www.fairchildsemi.com.
1. Introduction
This document describes the proposed solution for PoE++ PD that increases the
delivering power up to 90 W. It is designed to rectify a polarity of DC voltage from
Power Source Equipment (PSE) and then active clamp forward DC-DC converter steps
down a nominal input voltage 48 VIN to output voltage 3.3 VOUT in 300 kHz of the
switching frequency. To deliver 90 W power through a network cable, the power system
is composed with four-pair architecture, which PSE uses to deliver data and power to the
PD through both the spare pair and data pair in the network cable at the same time.
1.1. Description
GreenBridge™ FDMQ8203 replaces the conventional diode bridge to reduce the power
dissipation caused by the large voltage drop of a diode bridge, resulting in a lower power
class power device. The small package size of MLP4.5x5 reduces PCB area and increases
power density. FDMC86102 100 V shielded gate PowerTrench® MOSFET for the hot
swap switch has the low conduction loss and the ruggedness due to the low RDS(on) and
wide safe operating area (SOA). The FDMS86200 150 V shielded gate PowerTrench
MOSFET reduces switching loss and conduction loss in the primary switch of the active
clamp forward topology because it has low FOM (RDS(on) x Qg). The FDMS8025S 30 V
shielded gate PowerTrench MOSFET is optimized for synchronous rectification because
it has the low RDS(on) and outstanding body diode performance.
Figure 1. Power diagram

© 2013 Fairchild Semiconductor Corporation 4 FEBFDMQ8203_90W • Rev. 1.0.1
Table 1. MOSFET Parameters
Part Number Package Type BVDSS(V)
RDS(ON) [mΩ]
at 10 VGS
Qg [nC]
at 10 VGS COSS [pF]
Max. Max. Max.
FDMQ8203 MLP 4.5x5
N-Ch 100 110 5 55
P-Ch -80 190 19 65
FDMC86102 POWER33 N-Ch 100 24 13 175
FDMS86200 POWER56 N-Ch 150 18 33 203
FDMC2523P POWER33 P-Ch -150 1500 9 80
FDMS8025S POWER56 N-Ch 30 2.8 34 815
2. General Evaluation Board Specifications
Table 2. Summary of Features and Performance
Description Value Remark
Input Voltage Range 42 ~ 57 VIN IEEE802.3 at Standard
Output Voltage Range 3.3 VOUT Adjustable by R22 and R46
Switching Frequency 300 kHz Adjustable by R29 and R30, R31
Maximum Output Current 27 A Limited by Power Component
PCB Size 100x70 mm FR-4 / 4 Layers
PD Controller IEEE802.3 at PD Controller
PWM Controller Active Clamp Forward Controller
Efficiency
42VIN >89%
At Full Load (90 W)
48VIN >90%
57VIN >90%
Temperature
FDMQ8203 58.4°C
At Full Load (25℃Room Temperature)
FDMC86102 56.4°C
FDMS86200 74°C
FDMC2523P 65°C
FDMS8025S 88.6°C

© 2013 Fairchild Semiconductor Corporation 5 FEBFDMQ8203_90W • Rev. 1.0.1
3. Photographs
Figure 2. Top Side View of Evaluation Kit
Figure 3. Bottom Side View of Evaluation Kit

© 2013 Fairchild Semiconductor Corporation 6 FEBFDMQ8203_90W • Rev. 1.0.1
4. Setup and Test Procedure
Table 3. Test Point Descriptions
Test Point Label Descriptions
J6 AUX+ Measurement test point for positive AUX input voltage
J7 AUX- Measurement test point for negative AUX input voltage
J8 VIN+ Measurement test point for rectified positive input voltage
J9 VIN- Measurement test point for input voltage return
J10 +VOUT Measurement test point for output voltage
J11 -VOUT Measurement test point for output voltage return
4.1. Hardware Connector Description
The evaluation kit is fully assembled and tested. Follow the steps below to verify board
operation.
1. Use one of the following methods to power the evaluation kit:
If network connectivity is required:
Connect a network cable from the evaluation kit input port RJ45 connector to the
corresponding PSE Ethernet LAN connection, which provides power to the
evaluation kit such as PoE++ or four-fair architecture.
If network connectivity is not required:
Connect a -48 V DC power supply between the TXCT and RXCT; and
Connect a -48 V DC power supply between the MID+ and MID- together.
Caution: Do not turn on the power supply until all connections are completed.
2. Activate the PSE power supply or turn on the external DC power supply.
3. Using a voltmeter, verify that the evaluation kit provides +3.3 V across the
+VOUT and –VOUT pins. –VOUT is isolated from the evaluation kit’s input
VIN- and AUX- pins.
Figure 4. Test Setup

© 2013 Fairchild Semiconductor Corporation 7 FEBFDMQ8203_90W • Rev. 1.0.1
5. Performance of Evaluation Board
Figure 5 through Figure 9 show the measured efficiency and power loss on the evaluation
board when operated under the conditions in Table 4. This board is optimized for
3.3 VOUT, 300 kHz fSW, and peak 27 A IOUT specifications.
Table 4. Test Conditions
VIN V
OUT f
SW I
OUT Cooling
42 ~ 57 V 3.3 V 300 kHz 0~27 A, 5 A Step, 3-minute soak time No
Figure 5. Efficiency at VOUT=3.3 V, fSW=300 kHz, Soaking=3 Minutes, TA=25°C
Figure 6. Power Loss at VOUT=3.3 V, fSW=300 kHz, Soaking=3 Minutes, TA=25°C

© 2013 Fairchild Semiconductor Corporation 8 FEBFDMQ8203_90W • Rev. 1.0.1
Figure 7. Thermal Performance Comparison: GreenBridge™ vs. Diode Bridge
at VOUT=3.3, fSW= 300 kHz, Soaking=3 Minutes, TA=25°C
Figure 8. Top-Side Thermal Data at VIN=48 V, VOUT=3.3 / IOUT= 27 A, fSW= 300 kHz,
Soaking=10 Minutes, TA=25°C
GreenBridge™
FDMQ8203: 58.4°C
Forward Primary
FDMS86200: 74.0°C Forward Secondary
FDMS8025S: 88.6°C

© 2013 Fairchild Semiconductor Corporation 9 FEBFDMQ8203_90W • Rev. 1.0.1
S210 Diode Bridge FDMQ8203 GreenBridge™
42 VIN
89.6°C 63.0°C
48 VIN
83.8°C 58.3°C
57 VIN
77.0°C 55.2°C
Figure 9. Thermal Image Comparison: GreenBridge™ vs. Diode Bridge
VOUT=3.3 V, IOUT= 27 A, fSW=300 kHz, Soaking=3 Minutes, TA=25°C

© 2013 Fairchild Semiconductor Corporation 10 FEBFDMQ8203_90W • Rev. 1.0.1
6. Printed Circuit Board
PCB layout (100 mm x 70 mm, 4-Layer, FR-4).
Figure 10. SST (Top Side) Layer
Figure 11. SSB (Bottom Side) Layer
Figure 12. TOP & SMT Layer Figure 13. BOT & SMB Layer
Figure 14. INNER1 (POWER) Layer Figure 15. INNER2 (GND) Layer

© 2013 Fairchild Semiconductor Corporation 11 FEBFDMQ8203_90W • Rev. 1.0.1
7. Schematic
Figure 16. GreenBridge™ & PD controller Block Schematic
T2P
D17 S310
PWR GD
+
C12
33uF/63V
C11
56nF/ 100V
R17
3.3K
VIN +
R15
120
R14
49.9
R11
82k
P48V
R12
20k
R13
0
R16
8.2
P48V
C10
0.1uF/100V
U1
LT4275A
IEEUVLO
1
AUX
2
RCLASS
3
RCLASS++
4
GND
5T2P 6
PWR GD 7
HSSRC 8
HSGATE 9
VPORT 10
Q7
FDMC86102
J6
AUX+ 11
J7
AUX- 11
P48V
J12
SUPPORT
11
J13
SUPPORT
11
J14
SUPPOR T
11
J15
SUPPOR T
11
Q5
BC846
1
2
3 4
5
6
4
5
2
3
75Ohm X 4
12nF X 4
J4
MI D +
11
1000pF / 2KV
J5
MID -
11
J3
RXCT
11
J2
TXCT
11
IN FROM PSE OUT TO PHY
1
7
8
D9 SMAJ58A
6
C9 NC
Q6
BC846 1
2
34
5
6
R10
0
Q4
BC846 1
2
34
5
6
J1
7499511611A
TR C T3 1
TR D 3- 2
TR D 3+ 3
TR D 2+ 4
TR D 2- 5
TR C T2 6
TR C T4 7
TR D 4+ 8
TR D 4- 9
TR D 1- 10
TR C T1 12
TR D 1+ 11
TXCT 13
RXCT 14
MID+ 15
MID- 16
SHIELD
22 SHIELD
21
Yellow_C
17 Yellow_A
18 Orange_C
19 Green_C
20
Q3
BC846
1
2
3 4
5
6
P48V
C2
1nF/ 1005
R2
20K/1005
C1
1nF/ 1005
R1
20K/1005
DZ1
MM5Z 10V
D1
BAS516
D2
BAS516
DZ2
MM5Z 10V
C6
1nF/ 1005
R6
20K/1005
C5
1nF/ 1005
R5
20K/1005
DZ5
MM5Z 10V
D5
BAS516
D6
BAS516
DZ6
MM5Z 10V
Q2
FD MQ8203
1
2
3
4
5
67
8
9
10
11
12
13
14
15
16
C7
1nF/ 1005
R7
20K/1005
C8
1nF/ 1005
R8
20K/1005
DZ8
MM5Z 1 0V
D8
BAS516
D7
BAS516
DZ7
MM5Z 1 0V
Q1
FD MQ8203
1
2
3
4
5
67
8
9
10
11
12
13
14
15
16
C3
1nF/1005
R3
20K/1005
C4
1nF/ 1005
R4
20K/1005
DZ4
MM5Z 10V
D4
BAS516
D3
BAS516
DZ3
MM5Z 10V
R9 20K/1005

© 2013 Fairchild Semiconductor Corporation 12 FEBFDMQ8203_90W • Rev. 1.0.1
Figure 17. Active Clamp Forward DC-DC Block Schematic
R47
20k
R48
50K 1%
U5
HMHA2801
VIN +
R18
910
R22
820
J9
GND
11
R19
28k
D10
BAT54
C13
10u/35V
R20 1k
R24
10k
R21
NC
R23
499 R25
NC
J10
VOUT+
1
1
Q8
FDMS86200
D11
NC
R26
12
C14
10n
C31
100p
J11
VOUT-
1
1
R27
68k
R28
12k
U2
UCC2891D
RTDEL
1
RTON
2
RTOFF
3
VREF
4
SYNC
5
GND
6
CS
7
RSLOPE
8FB 9
SS/SD 10
PGND 11
AUX 12
OUT 13
VDD 14
LINEUV 15
VIN 16
J8
VIN+
11
C32
0.1u
R29
75k
C15 1uF
C16
0.1u
R30
56k
R31
8.2k
Z1
MMSZ5231B / 5.1Vz
1
2
C17
NC
C18
NC
C19
2.2uF/100V
Q9
FDMS8025S
C20
2.2uF/100V
C21
2.2uF/100V
Q54
FDMC2523P
S
1
S
2
S
3
G
4
D7
D6
D5
D8
D9
Q10
FDMS8025S
T1
P8208
1
3 7
8
Q11
FDMS8025S
T2
PA0810NL
1
2
3
4
5
6
7
8
10
11
Q12
FDMS8025S
+
C22
47uF/16V
PA0373NL
T3
1
6
11
7
+
C23
47uF/16V
R35
2.2
C24
330p
+
C25
330uF / 6.3V
+
C26
330uF / 6.3V
+
C27
330uF / 6.3V
C28
22uF/6.3V
C29
22uF/6.3V
C30
22uF/6.3V
CS
C33
22uF/6.3V
CS
C34
82n
R36
2.2
U3
TLV431
23
1
D12
BAT54
C35
0.22u/100V
C36
10u/35V
R37
2.2
C37 0.047uF/250V
R34
1K
C38
0.22u/100V
D13
1N4148WS
P_BIAS
R38
2.2
R32
2.2
U4
SFH690BT
1
23
4
Q49
MMBT2 222A
Q50
NC
R33
2k
R39
499
R40
NC
D14
1N4148WS
R41
2.2
D15
BAT54
P_BIAS
D16
BAT54
R42
27k
R43
1k
R44
10 R45
51
R46
16k
T2P
PWRGD

© 2013 Fairchild Semiconductor Corporation 13 FEBFDMQ8203_90W • Rev. 1.0.1
8. Bill of Materials
# Qty. Reference Part Name Vendor Comment
1 8
C1,C2,C3,C4,C5,C6,C
7,C8 1 nF / 1005 Any 1 nF / 50 V / 1005
2 8 C9,D11,C17,C18,
R21,R25,R40,Q50 NC
3 1 C10 C2012X7R2A104K TDK 0.1 µF / 100 V /
2012
4 1 C11 VJ0805Y563KXBAT Vishay 56 nF 100 V / 2012
5 1 C12 63SXV33M Sanyo 33 µF / 63 V / Alu
6 2 C13,C36 CL32A106KLULNNE SAMSUNG 10µF / 35 V / 3225
7 1 C14 10 nF / 50 V Any 10 nF / 50 V / 1608
8 1 C15 1 µF / 50 V Any 1 µF / 50 V / 1608
9 2 C16,C32 0.1 µF / 50 V Any 0.1 µF / 50 V / 1608
10 3 C19,C20,C21 GRM32ER72A225KA35L MURATA 2.2 µF / 100 V /
3225
11 2 C22,C23 GRM32ER61C476ME15L MURATA 47 µF /16V/3225
12 1 C24 330 pF / 50 V Any 330 pF / 50 V / 1608
13 3 C25,C26,C27 T520D337M006ATE010 Kemet 330 µF / 6.3 V /
Tantalum
14 4 C28,C29,C30,C33 C3216X5R0J226M TDK 22 µF /6.3V/3216
15 1 C31 100 pF / 50 V Any 100 pF / 50 V / 1608
16 1 C34 82 nF / 50 V Any 82 nF /50 V / 1608
17 2 C35,C38 C0805C224K1RACTU Kemet 220 nF /100 V /
2012
18 1 C37 GRM31CR72E473KW03L MURATA 47 nF /250 V / 3210
19 8
DZ1,DZ2,DZ3,DZ4,DZ
5,DZ6,DZ7,DZ8 MM5Z10V Fairchild Semiconductor 10 V Zener Diode
20 8
D1,D2,D3,D4,D5,D6,D
7,D8 BAS516 NXP Semiconductors
SW 75 V 250 mA
HS
21 1 D9 SMAJ58A Diodes TVS diode
22 4 D10,D12,D15,D16 BAT54 Fairchild Semiconductor BAT54
23 2 D13,D14 1N4148WS Fairchild Semiconductor 1N4148WS
24 1 D17 S310 Fairchild Semiconductor S310
25 1 J1 7499511611A Wurth Electronics RJ45 w/
Transformer
26 9
J2,J3,J4,J5,J6,J7,J8,J
9,J10,J11 Test Pin Any 3 mm
27 2 Q1,Q2 FDMQ8203 Fairchild Semiconductor GreenBridge™
Quad MOSFET
28 4 Q3,Q4,Q5,Q6 BC846BPDW1T1G ON Semiconductor 80 V Dual
Complementary
29 1 Q7 FDMC86102 Fairchild Semiconductor 100 V 24 m
MOSFET
30 1 Q8 FDMS86200 Fairchild Semiconductor 150 V 18 m
MOSFET
31 4 Q9,Q10,Q11,Q12 FDMS8025S Fairchild Semiconductor 30 V 2.8 m
MOSFET

© 2013 Fairchild Semiconductor Corporation 14 FEBFDMQ8203_90W • Rev. 1.0.1
# Qty. Reference Part Name Vendor Comment
32 1 Q49 MMBT2222A Fairchild Semiconductor NPN Transistor
33 1 Q54 FDMC2523P Fairchild Semiconductor (-)150 V 1.5
MOSFET
34 9
R1,R2,R3,R4,R5,R6,R
7,R8,R9 20 k/ 1005 Any 20 k/ 1005
35 2 R10,R13 0 / 1608 Any 0 / 1608
36 1 R11 82 k/ 1608 Any 82 k/ 1608
37 2 R12,R47 20 k/ 1608 Any 20 k/ 1608
38 1 R14 49.9 / 1608 Any 49.9 / 1608
39 1 R15 120 / 1608 Any 120 / 1608
40 1 R16 8.2 / 1608 Any 8.2 / 1608
41 1 R17 3.3 k/ 1608 Any 3.3 k/ 1608
42 1 R18 910 / 1608 Any 910 / 1608
43 1 R19 28 k/ 1608 Any 28 k/ 1608
44 3 R20,R34,R43 1 k/ 1608 Any 1 k/ 1608
45 1 R22 820 / 1608 Any 820 / 1608
46 2 R23,R39 499 / 1608 Any 499 / 1608
47 1 R24 10 k/ 1608 Any 10 k/ 1608
48 1 R26 12 / 1608 Any 12 / 1608
49 1 R27 68 k/ 1608 Any 68 k/ 1608
50 1 R28 12 k/ 1608 Any 12 k/ 1608
51 1 R29 75 k/ 1608 Any 75 k/ 1608
52 1 R30 56 k/ 1608 Any 56 k/ 1608
53 1 R31 8.2 k/ 1608 Any 8.2 k/ 1608
54 6
R32,R35,R36,R37,R38
,R41 2.2 / 1608 Any 2.2 / 1608
55 1 R33 2 k/ 1608 Any 2 k/ 1608
56 1 R42 27 k/ 1608 Any 27 k/ 1608
57 1 R44 10 / 1608 Any 10 / 1608
58 1 R45 51 / 1608 Any 51 / 1608
59 1 R46 16 k/ 1608 Any 16 k/ 1608
60 1 R48 50 kAny 50 k
61 1 T1 P8208NL Pulse CURRENT SENSE
2000 µH
62 1 T2 PA0810NL Pulse Inductor
63 1 T3 PA0373NL Pulse Transformer
64 1 U1 LT4275 Linear PoE++ PD
Controller
65 1 U2 UCC2891PW Texas Instruments PWM Controller
66 1 U3 TLV431 Texas Instruments Shunt Regulator
67 1 U4 SFH690BT Vishay Semiconductors Phototransistor
68 1 U5 HMHA2801 Fairchild Semiconductor Opto-coupler
69 1 Z1 MMSZ5231B 5.1Vz Fairchild Semiconductor MMSZ5231B 5.1Vz

© 2013 Fairchild Semiconductor Corporation 15 FEBFDMQ8203_90W • Rev. 1.0.1
9. Revision History
Rev. Date Description
1.0.0 September 2013 Initial Release
1.0.1 November 2013 Fixed typo table 4 VOUT to VIN
WARNING AND DISCLAIMER
Replace components on the Evaluation Board only with those parts shown on the parts list (or Bill of Materials) in the Users’ Guide. Contact an
authorized Fairchild representative with any questions.
This board is intended to be used by certified professionals, in a lab environment, following proper safety procedures. Use at your own risk. The
Evaluation board (or kit) is for demonstration purposes only and neither the Board nor this User’s Guide constitute a sales contract or create any kind
of warranty, whether express or implied, as to the applications or products involved. Fairchild warrantees that its products meet Fairchild’s published
specifications, but does not guarantee that its products work in any specific application. Fairchild reserves the right to make changes without notice to
any products described herein to improve reliability, function, or design. Either the applicable sales contract signed by Fairchild and Buyer or, if no
contract exists, Fairchild’s standard Terms and Conditions on the back of Fairchild invoices, govern the terms of sale of the products described herein.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR
USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR
THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a)
are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
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Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing
counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation,
substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to
protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts
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either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for
handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized
Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty
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customers to do their part in stopping this practice by buying direct or from authorized distributors.
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These commodities, technology, or software were exported from the United States in accordance with the Export Administration Regulations for the
ultimate destination listed on the commercial invoice. Diversion contrary to U.S. law is prohibited.
U.S. origin products and products made with U.S. origin technology are subject to U.S Re-export laws. In the event of re-export, the user will be
responsible to ensure the appropriate U.S. export regulations are followed.

www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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