Toshiba TPC8402 User manual

TPC8402
2006-11-13
1
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII)
TPC8402
Lithium-Ion Secondary Battery Applications
Notebook PCs
Portable Equipment Applications
zLow drain−source ON resistance : P Channel RDS (ON) = 27 mΩ(typ.)
N Channel RDS (ON) = 37 mΩ(typ.)
zHigh forward transfer admittance : P Channel |Yfs| = 7 S (typ.)
N Channel |Yfs| = 6 S (typ.)
zLow leakage current : P Channel IDSS = −10 µA (VDS = −30 V)
N Channel IDSS = 10 µA (VDS = 30 V)
zEnhancement−mode
: P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID= −1mA)
N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID= 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristics Symbol P Channel N Channel Unit
Drain-source voltage VDSS −30 30 V
Drain-gate voltage (RGS =20 kΩ) VDGR −30 30 V
Gate-source voltage VGSS ±20 ±20 V
DC (Note 1) ID−4.5 5
Drain current
Pulse (Note 1) IDP −18 20
A
Single-device operation
(Note 3a)
PD (1) 1.5 1.5
Drain power
dissipation
(t = 10s)
(Note 2a)
Single-device value at
dual operation (Note 3b) PD (2) 1.0 1.0
Single-device operation
(Note 3a)
PD (1) 0.75 0.75
Drain power
dissipation
(t = 10s)
(Note 2b)
Single-device value at
dual operation (Note 3b) PD (2) 0.45 0.45
W
Single-pulse avalanche energy EAS 26.3
(Note 4a)
32.5
(Note 4b) mJ
Avalanche current IAR −4.5 5 A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
EAR 0.10 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Note: For Notes 1 to 5, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration

TPC8402
2006-11-13
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Thermal Characteristics
Characteristics Symbol Max. Unit
Single-device operation
(Note 3a) Rth (ch-a) (1) 83.3
Thermal resistance, channel to ambient
(t = 10s) (Note 2a) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2) 125
Single-device operation
(Note 3a) Rth (ch-a) (1) 167
Thermal resistance, channel to ambient
(t = 10s) (Note 2b) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2) 278
°C/W
Marking
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is applied to both devices evenly.)
Note 4:
a) VDD = −24 V, Tch = 25°C (Initial), L = 1.0 mH, RG= 25 Ω, IAR = −4.5 A
b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG= 25 Ω, IAR = 5.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: •on lower left of the marking indicates Pin 1.
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(b)
* Weekly code: (Three digits)
Week of manufacture
(from “01” for first week of the year, continuing up to “52” or “53”)
Year of manufacture
(the last digit of the calendar year)
TPC8402
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)

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2006-11-13
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P-ch
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min. Typ. Max. Unit
Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA
Drain cut−off current IDSS VDS = −30 V, VGS = 0 V — — −10 µA
V(BR) DSS ID= −10 mA, VGS = 0 V −30 — —
Drain−source breakdown voltage
V(BR) DSX I
D= −10 mA, VGS = 20 V −15 — —
V
Gate threshold voltage Vth VDS = −10 V, ID= −1 mA −0.8 — −2.0 V
RDS (ON) VGS = −4 V, ID= −2.2 A — 55 65
Drain−source ON resistance
RDS (ON) VGS = −10 V, ID= −2.2 A — 27 35
mΩ
Forward transfer admittance |Yfs| VDS = −10 V, ID= −2.2 A 3.5 7 — S
Input capacitance Ciss — 970 —
Reverse transfer capacitance Crss — 180 —
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
— 370 —
pF
Rise time tr— 17 —
Turn−on time ton — 20 —
Fall time tf— 75 —
Switching time
Turn−off time toff — 160 —
ns
Total gate charge (gate−source
plus gate−drain) Qg— 28 —
Gate−source charge 1 Qgs1 — 6 —
Gate−drain (“miller”) charge Qgd
VDD ≈−24 V, VGS = −10 V, ID= −4.5 A
— 12 —
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min. Typ. Max. Unit
Drain reverse
current Pulse (Note 1) IDRP — — — −18 A
Forward voltage (diode) VDSF IDR = −4.5 A, VGS = 0 V — — 1.2 V

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N-ch
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min. Typ. Max. Unit
Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA
Drain cut−off current IDSS VDS = 30 V, VGS = 0 V ――10 µA
Drain−source breakdown
voltage V(BR) DSS ID= 10 mA, VGS = 0 V 30 ――V
Gate threshold voltage Vth VDS = 10 V, ID= 1 mA 0.8 ―2.0 V
RDS (ON) VGS = 4 V, ID= 2.5 A ―58 80 mΩ
Drain−source ON resistance
RDS (ON) VGS = 10 V, ID= 2.5 A ―37 50 mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID= 2.5 A 3 6 ―S
Input capacitance Ciss ―475 ―
Reverse transfer capacitance Crss ―85 ―
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
―270 ―
pF
Rise time tr―10 ―
Turn−on time ton ―16 ―
Fall time tf―13 ―
Switching time
Turn−off time toff ―70 ―
ns
Total gate charge (gate−source
plus gate−drain) Qg―16 ―
Gate−source charge 1 Qgs1 ―11 ―
Gate−drain (“miller”) charge Qgd
VDD ≈24 V, VGS = 10 V, ID= 5 A
―5 ―
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min. Typ. Max. Unit
Drain reverse
current Pulse (Note 1) IDRP — — — 20 A
Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V — — −1.2 V

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2006-11-13
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P-ch
Drain current ID(A)
RDS (ON) – ID
Drain−source voltage
RDS (ON) (mΩ)
VGS =−4 V
VGS =−10 V
−0.1 −1−100
10
100
5
30
50
−10−0.3 −3−30
300
500
Common source
Ta =25°C
Pulse test

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P-ch
DRAIN POWER DISSIPATION PD(W)
AMBIENT TEMPERATURE Ta (°C)
PD– Ta
(1)
(2)
0
0 50 100 150 200
0.5
1.0
1.5
2.0
(4)
(3)
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)
(NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY
BOARD (b) (NOTE 2b)
(3) SINGLE-DEVICE OPERATION
(NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL
OPERATION (NOTE3b)
t= 10 s
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain−source ON resistance
RDS (ON) (mΩ)
−80 −40 0 40 80 160120
0
20
40
60
80
Common source
Pulse test
−2.2 A
ID=−4.5 A
−1.3 A
ID=−4.5 A, −2.2 A
−10 V −1.3 A
VGS =−4 V

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2006-11-13
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P-ch
rth −tw
PULSE WIDTH tw(s)
TRANSIENT THERMAL IMPEDANCE
rth (°C/W)
0.1
0.001 0.01 0.1 1 10 100 1000
1
0.3
0.5
3
5
10
30
50
100
300
1000
500
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b)
(3) SINGLE-DEVICE OPERATION (NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) (1)
SINGLE PULSE
(2)
(3)
(4)

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N-ch

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N-ch
DRAIN POWER DISSIPATION PD(W)
AMBIENT TEMPERATURE Ta (°C)
PD– Ta
(1)
(2)
0
0 50 100 150 200
0.5
1.0
1.5
2.0
(4)
(3)
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)
(NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY
BOARD (b) (NOTE 2b)
(3) SINGLE-DEVICE OPERATION
(NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL
OPERATION (NOTE3b)
t= 10 s

TPC8402
2006-11-13
10
N-ch
rth −tw
PULSE WIDTH tw(s)
TRANSIENT THERMAL IMPEDANCE
rth (°C/W)
0.1
0.001 0.01 0.1 1 10 100 1000
1
0.3
0.5
3
5
10
30
50
100
300
1000
500
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b)
(3) SINGLE-DEVICE OPERATION (NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) (1)
SINGLE PULSE
(2)
(3)
(4)