Hynix Hmt112s6tfr8c User manual

APCPCWM_4828539:WP_0000005WP_0000005

Rev. 1.2 / Jul. 2010 1

204pin DDR3 SDRAM SODIMM

*Hynix Semiconductor reserves the right to change products or specifications without notice.

DDR3 SDRAM

Unbuffered SODIMMs

Based on 1Gb T-die

HMT112S6TFR8C

HMT125S6TFR8C

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Revision History

Revision No. History Draft Date Remark

0.1 Initial Release Sep.2009 Preliminary

1.0 JEDEC Update Nov. 2009 Web posting

1.1 Add supported CL5 Jun. 2010 Web posting

1.2 DIMM Outline Corrected Jul. 2010 Web posting

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Description

Hynix Unbuffered Small Outline DDR3 SDRAM DIMMs (Unbuffered Small Outline Double Data Rate Syn-

chronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules

that use Hynix DDR3 SDRAM devices. These Unbuffered DDR3 SDRAM SODIMMs are intended for use as

main memory when installed in systems such as mobile personal computers.

Features

* This product is in compliance with the RoHS directive.

Ordering Information

Part Number Density Organization Component Composition # of

ranks

HMT112S6TFR8C-G7/H9 1GB 128Mx64 128Mx8(H5TQ1G83TFR)*8 1

HMT125S6TFR8C-G7/H9 2GB 256Mx64 128Mx8(H5TQ1G83TFR)*16 2

• VDD=1.5V +/- 0.075V

• VDDQ=1.5V +/- 0.075V

• VDDSPD=3.0V to 3.6V

• Functionality and operations comply with the

DDR3 SDRAM datasheet

• 8 internal banks

• Data transfer rates: PC3-10600, PC3-8500, or

PC3-6400

• Bi-directional Differential Data Strobe

• 8 bit pre-fetch

• Burst Length (BL) switch on-the-fly: BL 8 or BC

(Burst Chop) 4

• On Die Termination (ODT) supported

• RoHS compliant

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Key Parameters

Speed Grade

Address Table

MT/s Grade tCK

(ns)

CAS

Latency

(tCK)

tRCD

(ns) tRP

(ns) tRAS

(ns) tRC

(ns) CL-tRCD-tRP

DDR3-1066 -G7 1.875 713.125 13.125 37.5 50.625 7-7-7

DDR3-1333 -H9 1.5 9 13.5 13.5 36 49.5 9-9-9

Grade Frequency [MHz] Remark

CL5 CL6 CL7 CL8 CL9 CL10

-G7 667 800 1066 1066

-H9 667 800 1066 1066 1333 1333

1GB(1Rx8) 2GB(2Rx8)

Refresh Method 8K/64ms 8K/64ms

Row Address A0-A13 A0-A13

Column Address A0-A9 A0-A9

Bank Address BA0-BA2 BA0-BA2

Page Size 1KB 1KB

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Pin Descriptions

Pin Name Description Num

ber Pin Name Description Num

ber

CK[1:0] Clock Input, positive line 2 DQ[63:0] Data Input/Output 64

CK[1:0] Clock Input, negative line 2 DM[7:0] Data Masks 8

CKE[1:0] Clock Enables 2 DQS[7:0] Data strobes 8

RAS Row Address Strobe 1 DQS[7:0] Data strobes, negative line 8

CAS Column Address Strobe 1 EVENT Temperature event pin 1

WE Write Enable 1 TEST Logic Analyzer specific test pin (No

connect on SODIMM) 1

S[1:0] Chip Selects 2 RESET Reset Pin 1

A[9:0],A11,

A[15:13] Address Inputs 14 VDD Core and I/O Power 18

A10/AP Address Input/Autoprecharge 1 VSS Ground 52

A12/BC Address Input/Burst chop 1

BA[2:0] SDRAM Bank Addresses 3 VREFDQ Input/Output Reference 1

ODT[1:0] On Die Termination Inputs 2 VREFCA 1

SCL Serial Presence Detect (SPD)

Clock Input 1VTT Termination Voltage 2

SDA SPD Data Input/Output 1 VDDSPD SPD Power 1

SA[1:0] SPD Address Inputs 2 NC Reserved for future use 2

Total: 204

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Input/Output Functional Descriptions

Symbol Type Polarity Function

CK0/CK0

CK1/CK1 IN Cross Point

The system clock inputs. All address and command lines are sampled on the cross point

of the rising edge of CK and falling edge of CK. A Delay Locked Loop (DLL) circuit is

driven from the clock inputs and output timing for read operations is synchronized to the

input clock.

CKE[1:0] IN Active

High

Activates the DDR3 SDRAM CK signal when high and deactivates the CK signal when

low. By deactivating the clocks, CKE low initiates the Power Down mode or the Self

Refresh mode.

S[1:0] IN Active

Low

Enables the associated DDR3 SDRAM command decoder when low and disables the

command decoder when high. When the command decoder is disabled, new commands

are ignored but previous operations continue. Rank 0 is selected by S0; Rank 1 is

selected by S1.

ODT[1:0] IN Active

High Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR3

SDRAM mode register.

RAS, CAS, WE IN Active

Low When sampled at the cross point of the rising edge of CK, signals CAS, RAS, and WE

define the operation to be executed by the SDRAM.

VREFDQ

VREFCA Supply Reference voltage for SSTL15 inputs.

BA[2:0] IN — Selects which SDRAM internal bank of eight is activated.

A[9:0],

A10/AP,

A11,

A12/BC

A[15:13]

IN —

During a Bank Activate command cycle, defines the row address when sampled at the

cross point of the rising edge of CK and falling edge of CK. During a Read of Write com-

mand cycle, defines the column address when sampled at the cross point of the rising

edge of CK and falling edge of CK. In addition to the column address, AP is used to

invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high

autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low,

autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction

with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be pre-

charged regardless of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used

to define which bank to precharge. A12(BC) is samples during READ and WRITE com-

mands to determine if burst chop (on-the-fly) will be performed (HIGH, no burst chop:

LOW, burst chopped).

DQ[63:0] I/O — Data Input/Output pins.

DM[7:0] IN Active

High

The data write masks, associated with one data byte. In Write mode, DM operates as a

byte mask by allowing input data to be written if it is low but blocks the write operation

if it is high. In Read mode, DM lines have no effect.

VDD, VDDSPD

VSS Supply Power supplies for core, I/O, Serial Presence Detect, and ground for the module.

DQS[7:0],

DQS[7:0] I/O Cross Point

The data strobes, associated with one data byte, sourced with data transfers. In Write

mode, the data strobe is sourced by the controller and is centered in the data window.

In Read mode, the data strobe is sourced by the DDR3 SDRAMs and is sent at the lead-

ing edge of the data window. DQS signals are complements, and timing is relative to the

crosspoint of respective DQS and DQS.

SA[1:0] IN — These signals are tied at the system planar to either VSS or VDDSPD to configure the

serial SPD EEPROM address range.

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SDA I/O — This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor

must be connected from the SDA bus line to VDDSPD on the system planar to act as a

pullup.

SCL IN — This signal is used to clock data into and out of the SPD EEPROM. A resistor may be con-

nected from the SCL bus time to VDDSPD on the system planar to act as a pullup.

EVENT OUT

(open

drain) Active Low

This signal indicates that a thermal event has been detected in the thermal sensing

device.The system should guarantee the electrical level requirement is met for the

EVENT pin on TS/SPD part.

No pull-up resister is provided on DIMM.

VDDSPD Supply Serial EEPROM positive power supply wired to a separate power pin at the connector

which supports from 3.0 Volt to 3.6 Volt (nominal 3.3V) operation.

RESET IN The RESET pin is connected to the RESET pin on the register and to the RESET pin on

the DRAM.

TEST Used by memory bus analysis tools (unused (NC) on memory DIMMs)

Symbol Type Polarity Function

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Pin Assignments

#Front

Side Pin

#Back

Side Pin

#Front

Side Pin

#Back

Side Pin

#Front

Side Pin

#Back

Side Pin

#Front

Side Pin

#Back

Side

1VREFDQ 2VSS 53 DQ19 54 VSS 105 VDD 106 VDD 157 DQ42 158 DQ46

3VSS 4

DQ4

55 VSS 56

DQ28

107

A10/AP

108

BA1

159

DQ43

160

DQ47

5 DQ0 6 DQ5 57 DQ24 58 DQ29 109 BA0 110 RAS 161 VSS 162 VSS

7DQ18VSS 59 DQ25 60 VSS 111 VDD 112 VDD 163 DQ48 164 DQ52

9VSS 10

DQS0

61 VSS 62

DQS3

113

114

165

DQ49

166

DQ53

11 DM0 12 DQS0 63 DM3 64 DQS3 115 CAS 116 ODT0 167 VSS 168 VSS

13 VSS 14 VSS 65 VSS 66 VSS 117 VDD 118 VDD 169

DQS6

170 DM6

15 DQ2 16 DQ6 67 DQ26 68 DQ30 119 A132120 ODT1 171 DQS6 172 VSS

DQ3

DQ7

DQ27

DQ31

121

122

173 VSS 174

DQ54

19 VSS 20 VSS 71 VSS 72 VSS 123 VDD 124 VDD 175 DQ50 176 DQ55

21 DQ8 22 DQ12 73 CKE0 74 CKE1 125 TEST 126 VREFCA 177 DQ51 178 VSS

DQ9

DQ13

75 VDD 76 VDD 127 VSS 128 VSS 179 VSS 180

DQ60

25 VSS 26 VSS 77 NC 78 A152129 DQ32 130 DQ36 181 DQ56 182 DQ61

DQS1

28 DM1 79 BA2 80 A142131 DQ33 132 DQ37 183 DQ57 184 VSS

DQS1

RESET

81 VDD 82 VDD 133 VSS 134 VSS 185 VSS 186

DQS7

31 VSS 32 VSS 83 A12/BC 84 A11 135

DQS4

136 DM4 187 DM7 188 DQS7

33 DQ10 34 DQ14 85 A9 86 A7 137 DQS4 138 VSS 189 VSS 190 VSS

DQ11

DQ15

87 VDD 88 VDD 139 VSS 140

DQ38

191

DQ58

192

DQ62

37 VSS 38 VSS 89 A8 90 A6 141 DQ34 142 DQ39 193 DQ59 194 DQ63

39 DQ16 40 DQ20 91 A5 92 A4 143 DQ35 144 VSS 195 VSS 196 VSS

DQ17

DQ21

93 VDD 94 VDD 145 VSS 146

DQ44

197

SA0

198

EVENT

43 VSS 44 VSS 95 A3 96 A2 147 DQ40 148 DQ45 199 VDDSPD 200 SDA

DQS2

46 DM2 97 A1 98 A0 149 DQ41 150 VSS 201 SA1 202 SCL

DQS2

48 VSS 99 VDD 100 VDD 151 VSS 152

DQS5

203

204

49 VSS 50 DQ22 101 CK0 102 CK1 153 DM5 154 DQS5

51 DQ18 52 DQ23 103 CK0 104 CK1 155 VSS 156 VSS

NC = No Connect; RFU = Reserved Future Use

1. TEST (pin 125) is reserved for bus analysis probes and is NC on normal memory modules.

2. This address might be connected to NC balls of the DRAMs (depending on density); either way they will be con-

nected to the termination resistor.

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Functional Block Diagram

1GB, 128Mx64 Module(1Rank of x8)

DQS0

DM0

DQ[0:7]

DQS

DQ [0:7]

RAS

CAS

CK0

CKE0

ODT0

240ohm

+/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS2

DM2

Q[16:23]

DQS

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS4

DM4

Q[32:39]

DQS

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

LDQS

LDM

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS3

DM3

Q[48:55]

DQS

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

LDQS

LDM

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS1

DM1

DQ[8:15]

DQS3

DM3

DQ[24:31]

DQS5

DM5

DQ[40:47]

DQS7

DM7

DQ[56:63]

Temp Sensor

SDA

D0–D7

SPD

SPD/TS

D0–D7

REF

SCL

D0–D7

EVENT

SCL

SA0

SA1 (with SPD)

EVENT

A2 SDA

SCL

SA0

SA1 (SPD)

Vtt

REF

CK0

CK1

CK0

CK1

ODT1

D0–D7, SPD, Temp sensor

D0–D7

NOTES

1. DQ wiring may differ from that

shown however, DQ, DM, DQS, and

DQS relationships are maintained as

shown

Address and Control Lines

Rank 0

The SPD may be

integrated with the Temp

Sensor or may be

a separate component

D0 D1 D2 D3

Vtt

D4 D5 D6 D7

Vtt

V1 V2 V4V3

CKE1

EVENT

RESET

Temp Sensor

D0-D7

Terminated near

card edge

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2GB, 256Mx64 Module(2Rank of x8)

DQS3

DM3

DQ[24:31]

DQS

DQ [0:7]

D11

RAS

CAS

CK1

CKE1

ODT1

A[O:N]/BA[O:N]

240ohm

+/-1%

Vtt

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

LDQS

LDM

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

CK0

CKE0

ODT0

Temp Sensor

SDA

D0–D15

SPD

SPD/TS

D0–D15

REF

SCL

D0–D15

EVENT

SCL

SA0

SA1 (with SPD)

EVENT

A2 SDA

SCL

SA0

SA1 (SPD)

REF

CK0

CK1

CKE0

CKE1

D0–D15, SPD, Temp sensor

D0–D7

D8–D15

D0-D7

D8-D15

NOTES

1. DQ wiring may differ from that shown

however, DQ, DM, DQS, and DQS rela-

tionships are maintained as shown

Rank 0

D0–D7

D8–D15

Rank 1

DQS1

DM1

DQ[8:15]

DQS

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

LDQS

LDM

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS0

DM0

DQ[0:7]

DQS

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

LDQS

LDM

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS4

DM4

DQ[32:39]

DQS6

DM6

DQ[48:55]

DQS7

DM7

DQ[56:43]

DQS5

DM5

DQ[40:47]

Vtt Vtt

VDD VDD

Cterm Cterm

D12

DQS

DQ [0:7]

240ohm

+/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS

DQ [0:7]

240ohm

+/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

D14

DQS

DQ [0:7]

+/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS

DQ [0:7]

+/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

240ohm 240ohm

D15

DQS

DQ [0:7]

+/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS

DQ [0:7]

+/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

240ohm 240ohm

DQS2

DM2

DQ[6:23]

DQS

DQ [0:7]

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

LDQS

LDM

DQ [0:7]

D10

240ohm

ZQ +/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

D13

DQS

DQ [0:7]

+/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

DQS

DQ [0:7]

+/-1%

RAS

CAS

CKE

ODT

A[O:N]/BA[O:N]

240ohm 240ohm

ODT0

ODT1

EVENT

RESET

D0–D7

D8–D15

Temp Sensor

D0-D15

D0–D7

D8–D15

The SPD may be

integrated with the Temp

Sensor or may be

a separate component

D1 D11

D2 D13

D4 D14

D15

D8 D10

D3 D12

D5 D7

Vtt

V1V2

V4 V5 V6

V8 V7

V9V1

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Absolute Maximum Ratings

Absolute Maximum DC Ratings

Notes:

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-

ing conditions for extended periods may affect reliability.

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement

conditions, please refer to JESD51-2 standard.

3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than

0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.



DRAM Component Operating Temperature Range

Notes:

1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For mea-

surement conditions, please refer to the JEDEC document JESD51-2.

2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. Dur-

ing operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.

3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC

case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:

a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It

is also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.

Please refer to the DIMM SPD for option availability

b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use

the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b)

or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b). Hynix DDR3 SDRAMs sup-

port Auto Self-Refresh and Extended Temperature Range and please refer to Hynix component datasheet

and/or the DIMM SPD for tREFI requirements in the Extended Temperature Range.

Absolute Maximum DC Ratings

Symbol Parameter Rating Units Notes

VDD Voltage on VDD pin relative to Vss - 0.4 V ~ 1.975 V V 1,

VDDQ Voltage on VDDQ pin relative to Vss - 0.4 V ~ 1.975 V V 1,

VIN, VOUT Voltage on any pin relative to Vss - 0.4 V ~ 1.975 V V 1

TSTG Storage Temperature -55 to +100 oC1,2

Temperature Range

Symbol Parameter Rating Units Notes

TOPER Normal Operating Temperature Range 0 to 85 oC 1,2

Extended Temperature Range 85 to 95 oC1,3

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AC & DC Operating Conditions

Recommended DC Operating Conditions

Notes:

1. Under all conditions, VDDQ must be less than or equal to VDD.

2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

AC & DC Input Measurement Levels

AC and DC Logic Input Levels for Single-Ended Signals

AC and DC Input Levels for Single-Ended Command and Address Signals

Notes:

1. For input only pins except RESET, Vref = VrefCA (DC).

2. Refer to “Overshoot and Undershoot Specifications” on page 25.

3. The ac peak noise on VRef may not allow VRef to deviate from VRefCA(DC) by more than +/-1% VDD (for

reference: approx. +/- 15 mV).

4. For reference: approx. VDD/2 +/- 15 mV.

Recommended DC Operating Conditions

Symbol Parameter Rating Units Notes

Min. Typ. Max.

VDD Supply Voltage 1.425 1.500 1.575 V 1,2

VDDQ Supply Voltage for Output 1.425 1.500 1.575 V 1,2

Single Ended AC and DC Input Levels for Command and ADDress

Symbol Parameter DDR3-800/1066/1333 Unit Notes

Min Max

VIH.CA(DC100) DC input logic high Vref + 0.100 VDD V 1

VIL.CA(DC100) DC input logic low VSS Vref - 0.100 V 1

VIH.CA(AC175) AC input logic high Vref + 0.175 Note2 V 1, 2

VIL.CA(AC175) AC input logic low Note2 Vref - 0.175 V 1, 2

VIH.CA(AC150) AC Input logic high Vref + 0.150 Note2 V 1, 2

VIL.CA(AC150) AC input logic low Note2 Vref - 0.150 V 1, 2

VRefCA(DC)Reference Voltage for ADD, CMD inputs 0.49 * VDD 0.51 * VDD V 3, 4

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AC and DC Input Levels for Single-Ended Signals

DDR3 SDRAM will support two Vih/Vil AC levels for DDR3-800 and DDR3-1066 as specified in the table

below. DDR3 SDRAM will also support corresponding tDS values (Table 41 and Table 47 in “ DDR3 Device

Operation”) as well as derating tables in Table 44 of “DDR3 Device Operation” depending on Vih/Vil AC lev-

els.

Notes:

1. Vref = VrefDQ (DC).

2. Refer to “Overshoot and Undershoot Specifications” on page 25.

3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for

reference: approx. +/- 15 mV).

4. For reference: approx. VDD/2 +/- 15 mV.

Single Ended AC and DC Input Levels for DQ and DM

Symbol Parameter DDR3-800/1066 DDR3-1333 Unit Notes

Min Max Min Max

VIH.CA(DC100) DC input logic high Vref + 0.100 VDD Vref + 0.100 VDD V 1

VIL.CA(DC100) DC input logic low VSS Vref - 0.100 VSS Vref - 0.100 V 1

VIH.CA(AC175) AC input logic high Vref + 0.175 Note2 - - V 1, 2

VIL.CA(AC175) AC input logic low Note2 Vref - 0.175 - - V 1, 2

VIH.CA(AC150) AC Input logic high Vref + 0.150 Note2 Vref + 0.150 Note2 V 1, 2

VIL.CA(AC150) AC input logic low Note2 Vref - 0.150 Note2 Vref - 0.150 V 1, 2

VRefDQ(DC)ReferenceVoltageforDQ,

DM inputs 0.49 * VDD 0.51 * VDD 0.49 * VDD 0.51 * VDD V 3, 4

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Vref Tolerances

The dc-tolerance limits and ac-noise limits for the reference voltages VRefCA and VRefDQ are illustrated in

figure below. It shows a valid reference voltage VRef (t) as a function of time. (VRef stands for VRefCA and

VRefDQ likewise).

VRef (DC) is the linear average of VRef (t) over a very long period of time (e.g. 1 sec). This average has to

meet the min/max requirements in the table “Differential Input Slew Rate Definition” on page 20. Further-

more VRef (t) may temporarily deviate from VRef (DC) by no more than +/- 1% VDD.

Illustration of VRef(DC) tolerance and VRef ac-noise limits

The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC), and VIL(DC) are depen-

dent on VRef.

“VRef” shall be understood as VRef(DC), as defined in figure above.

This clarifies that dc-variations of VRef affect the absolute voltage a signal has to reach to achieve a valid

high or low level and therefore the time to which setup and hold is measured. System timing and voltage

budgets need to account for VRef(DC) deviations from the optimum position within the data-eye of the input

signals.

This also clarifies that the DRAM setup/hold specification and derating values need to include time and

voltage associated with VRefac-noise. Timing and voltage effects due to ac-noise on VRef up to the speci-

fied limit (+/- 1% of VDD) are included in DRAM timings and their associated deratings.

VDD

VSS

VDD/2

VRef(DC)

VRef ac-noise

voltage

time

VRef(DC)max

VRef(DC)min

VRef(t)

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AC and DC Logic Input Levels for Differential Signals

Differential signal definition

Definition of differential ac-swing and “time above ac-level” tDVAC

time

Differential Input Voltage(i.e.DQS - DQS#, CK - CK#)

IL.DIFF.AC.MAX

IL.DIFF.MAX

IL.DIFF.MIN

IL.DIFF.AC.MIN

DVAC

half cycle

DVAC

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Differential swing requirements for clock (CK - CK) and strobe (DQS-DQS)

Notes:

1. Used to define a differential signal slew-rate.

2. For CK - CK use VIH/VIL (ac) of AADD/CMD and VREFCA; for DQS - DQS, DQSL, DQSL, DQSU, DQSU use VIH/VIL

(ac) of DQs and VREFDQ; if a reduced ac-high or ac-low levels is used for a signal group, then the reduced level

applies also here.

3. These values are not defined; however, the single-ended signals Ck, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU

need to be within the respective limits (VIH (dc) max, VIL (dc) min) for single-ended signals as well as the limita-

tions for overshoot and undershoot. Refer to “Overshoot and Undershoot Specifications” on page 25.

Differential AC and DC Input Levels

Symbol Parameter DDR3-800, 1066, 1333 Unit Notes

Min Max

VIHdiff Differential input high + 0.200 Note 3 V 1

VILdiff Differential input logic low Note 3 - 0.200 V 1

VIHdiff (ac) Differential input high ac 2 x (VIH (ac) - Vref) Note 3 V 2

VILdiff (ac) Differential input low ac Note 3 2 x (VIL (ac) - Vref) V 2

Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS

Slew Rate [V/ns] tDVAC [ps]

@ |VIH/Ldiff (ac)| = 350mV tDVAC [ps]

@ |VIH/Ldiff (ac)| = 300mV

min max min max

> 4.0 75 - 175 -

4.0 57 - 170 -

3.0 50 - 167 -

2.0 38 - 163

1.8 34 - 162 -

1.6 29 - 161 -

1.4 22 - 159 -

1.2 13 - 155 -

1.0 0 - 150 -

< 1.0 0 - 150 -

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Single-ended requirements for differential signals

Each individual component of a differential signal (CK, DQS, DQSL, DQSU, CK, DQS, DQSL, of DQSU) has

also to comply with certain requirements for single-ended signals.

CK and CK have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH

(ac) / VIL (ac)) for ADD/CMD signals) in every half-cycle.

DQS, DQSL, DQSU, DQS, DQSL have to reach VSEHmin / VSELmax (approximately the ac-levels (VIH (ac)

/ VIL (ac)) for DQ signals) in every half-cycle preceding and following a valid transition.

Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g., if

VIH.CA(AC150)/VIL.CA(AC150) is used for ADD/CMD signals, then these ac-levels apply also for the single-

ended signals CK and CK.

Single-ended requirements for differential signals.

Note that, while ADD/CMD and DQ signal requirements are with respect to Vref, the single-ended compo-

nents of differential signals have a requirement with respect to VDD / 2; this is nominally the same. the

transition of single-ended signals through the ac-levels is used to measure setup time. For single-ended

components of differential signals the requirement to reach VSELmax, VSEHmin has no bearing on timing,

but adds a restriction on the common mode characteristics of these signals.

VDD or VDDQ

VSEHmin

VDD/2 or VDDQ/2

VSEH

VSELmax

VSS or VSSQ

CK or DQS

VSEL

time

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Notes:

1. For CK, CK use VIH/VIL (ac) of ADD/CMD; for strobes (DQS, DQS, DQSL, DQSL, DQSU, DQSU) use VIH/VIL (ac)

of DQs.

2. VIH (ac)/VIL (ac) for DQs is based on VREFDQ; VIH (ac)/VIL (ac) for ADD/CMD is based on VREFCA; if a reduced

ac-high or ac-low level is used for a signal group, then the reduced level applies also here.

3. These values are not defined; however, the single-ended signals Ck, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU

need to be within the respective limits (VIH (dc) max, VIL (dc) min) for single-ended signals as well as the limita-

tions for overshoot and undershoot. Refer to “Overshoot and Undershoot Specifications” on page 25.

Differential Input Cross Point Voltage

To guarantee tight setup and hold times as well as output skew parameters with respect to clock and

strobe, each cross point voltage of differential input signals (CK, CK and DQS, DQS) must meet the

requirements in the table below. The differential input cross point voltage VIX is measured from the actual

cross point of true and complement signals to the midlevel between of VDD and VSS

Vix Definition

Single-ended levels for CK, DQS, DQSL, DQSU, CK, DQS, DQSL or DQSU

Symbol Parameter DDR3-800, 1066, 1333 Unit Notes

Min Max

VSEH Single-ended high level for strobes (VDD / 2) + 0.175 Note 3 V1,2

Single-ended high level for Ck, CK (VDD /2) + 0.175 Note 3 V1,2

VSEL Single-ended low level for strobes Note 3 (VDD / 2) = 0.175 V1,2

Single-ended low level for CK, CK Note 3 (VDD / 2) = 0.175 V1,2

VDD

VSS

VDD/2

VIX

CK, DQS

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Notes:

1. Extended range for VIX is only allowed for clock and if single-ended clock input signals CK and CK are

monotonic with a single-ended swing VSEL / VSEH of at least VDD/2 +/-250 mV, and when the differential

slew rate of CK - CK is larger than 3 V/ns.

2. Refer to the table “Single-ended levels for CK, DQS, DQSL, DQSU, CK, DQS, DQSL or DQSU” on page 18

for VSEL and VSEH standard values.

Slew Rate Definitions for Single-Ended Input Signals

See 7.5 “Address / Command Setup, Hold and Derating” on page 137 in “DDR3 Device Operation” for sin-

gle-ended slew rate definitions for address and command signals.



See 7.6 “Data Setup, Hold and Slew Rate Derating” on page 144 in “DDR3 Device Operation” for single-

ended slew rate definition for data signals.

Cross point voltage for differential input signals (CK, DQS)

Symbol Parameter DDR3-800, 1066, 1333 Unit Notes

Min Max

VIX Differential Input Cross Point Voltage

relative to VDD/2 for CK, CK -150 150 mV

-175 175 mV 1

VIX Differential Input Cross Point Voltage

relative to VDD/2 for DQS, DQS -150 150 mV

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Slew Rate Definitions for Differential Input Signals

Input slew rate for differential signals (CK, CK and DQS, DQS) are defined and measured as shown in table

and figure below.

Notes:

The differential signal (i.e. CK-CK and DQS-DQS) must be linear between these thresholds.

Differential Input Slew Rate Definition for DQS, DQS and CK, CK

Differential Input Slew Rate Definition

Description Measured Defined by

Min Max

Differential input slew rate for rising edge

(CK-CK and DQS-DQS)VILdiffmax VIHdiffmin [VIHdiffmin-VILdiffmax] / DeltaTRdiff

Differential input slew rate for falling edge

(CK-CK and DQS-DQS)VIHdiffmin VILdiffmax [VIHdiffmin-VILdiffmax] / DeltaTFdiff

Delta

TFdiff

Delta

TRdiff

vIHdiffmin

vILdiffmax

Differential Input Voltage (i.e. DQS-DQS; CK-CK)

Differential Input Slew Rate Definition for DQS, DQS# and CK, CK#

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