Nokia NSB-6 Series Guide

PAMS Technical Documentation
NSB–6 Series Transceivers
Issue 1 06/2000 ENokia Mobile Phones Ltd.
System Module

NSB–6
System Module PAMS Technical Documentation
Page 2 Issue 1 06/2000
ENokia Mobile Phones Ltd.
CONTENTS
Transceiver NSB–6 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Introduction 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation Modes 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interconnection Diagram 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
System Module 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Baseband Module 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Diagram 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Technical Summary 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
External and Internal Signals and Connections 10. . . . . . . . .
DC (charger) connector 10. . . . . . . . . . . . . . . . . . . . . . . . . . .
Service connector 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery connector 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SIM card connector 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RTC backup battery 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Distribution 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery charging 12. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Startup Charging 13. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Overvoltage Protection 13. . . . . . . . . . . . . . . . . . . .
Battery Removal During Charging 15. . . . . . . . . . . . . . . . . .
PWM 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Identification 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Battery Temperature 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage Regulators 18. . . . . . . . . . . . . . . . . . . . . . . .
Switched Mode Supply VSIM 20. . . . . . . . . . . . . . . . . . . . . .
Power Up and Power Down 20. . . . . . . . . . . . . . . . . . . . . . . . .
Power up with a charger 20. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up With The Power Switch (PWRONX) 21. . . . . . .
Power Up by RTC 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Up by IBI 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Down 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Modes of Operation 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Acting Dead 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Active Mode 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sleep Mode 23. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Charging 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Watchdog 24. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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System Module
PAMS Technical Documentation
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Audio control 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PCM serial interface 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Control 26. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MAD2 WD1 26. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Memories 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MAD memory configuration 34. . . . . . . . . . . . . . . . . . . . . . .
Memory 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Program and Data Memory 34. . . . . . . . . . . . . . . . . . . . . . .
Work Memory 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MCU Memory Requirements 34. . . . . . . . . . . . . . . . . . . . . .
MCU Memory Map 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Flash Programming 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
COBBA GJP 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Real Time Clock 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RTC backup battery charging 37. . . . . . . . . . . . . . . . . . . . . .
Security 37. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Baseband Testing 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Alignments 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Baseband Startup for Testing 38. . . . . . . . . . . . . . . . . . . . . .
RF Module 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Environmental specifications 39. . . . . . . . . . . . . . . . . . . . . . . . .
Main Technical specifications 39. . . . . . . . . . . . . . . . . . . . . . . .
Maximum Ratings 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Characteristics 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Frequency Plan 40. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC characteristics 40. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Regulators 40. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control signals (typical current consumption in different modes) 40
Power Distribution Diagram 41. . . . . . . . . . . . . . . . . . . . . . . . . .
RF Functional Description 42. . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency synthesizer 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receiver 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transmitter 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AGC strategy 46. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AFC function 46. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC–compensation 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receiver characteristics 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transmitter characteristics 47. . . . . . . . . . . . . . . . . . . . . . . . . . .
Parts list of UP9 (EDMS Issue 9.2) Code: 0201362 48. . . . . . . . . .

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Schematic Diagrams: UP9 (Section 10 at the back of the binder)
Connection between RF and BB modules (Version 12.03 Edit 12) layout 12 A–1
Baseband Block Interconnections (Version 12.03 Edit 12) for layout 12 A–2
Circuit Diagram of Power Supply (Version 12.03 Edit 16) for layout 12 A–3
Circuit Diagram of MAD Block (Version 12.03 Edit 14) for layout 12 A–4
Circuit Diagram of CPU Block (Version 12.03 Edit 14) for layout 12 A–5
Circuit Diagram of RF Block (Version 12.03 Edit 43) for layout 12 A–6
Circuit Diagram of Audio and RFI (Version 12.03 Edit 14) for layout 12 A–7
Circuit Diagram of IR Module (Version 12.03 Edit 8) for layout 12 A–8
Circuit Diagram of UI (Version 12.03 Edition 12) for layout version 12 A–9
Layout Diagram of UP9 – Top (Version 12) A–10. . . . . . . . . . . . . . . . .
Layout Diagram of UP9 – Bottom (Version 12) A–10. . . . . . . . . . . . . .
Testpoints of UP9 – Top (Version 12) A–11. . . . . . . . . . . . . . . . . . . . . .
Testpoints of UP9 – Bottom (Version 12) A–11. . . . . . . . . . . . . . . . . . .
RF Testpoints of UP9 – Circuit Diagram (Version 12) A–12. . . . . . . .
RF Testpoints of UP9 – Layout (Version 12) A–13. . . . . . . . . . . . . . . .

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PAMS Technical Documentation
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System Module PAMS Technical Documentation
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ENokia Mobile Phones Ltd.
Transceiver NSB–6
Introduction
The NSB–6 is a dual band transceiver unit designed for the GSM900 (in-
cluding EGSM) and GSM1900 networks. It is both GSM900 phase 2 power
class 4 transceiver (2W) and GSM1900 power class 1 (1W) transceiver.
The transceiver consists of System/RF module (UP9), Display module
(UX7) and assembly parts.
The transceiver has a full graphic display and the user interface is based
on a Jack style UI with two soft keys.
The NSB–6 transceiver uses internal PIFA antenna combined with ex-
tractable whip antenna.
The transceiver has a low leakage tolerant earpiece and an omnidirec-
tional microphone located to a slide, providing an excellent audio quality.
The transceiver supports a full rate, an enhanced full rate and a half rate
speech decoding.
An integrated IR link provides a connection between two NSB–6 trans-
ceivers or a transceiver and a PC (internal data), or a transceiver and a
printer.
The small SIM ( Subscriber Identity Module ) card is located underneath
the back cover of the phone.
Operation Modes
There are five different operation modes:
– power off mode
– idle mode
– active mode
– charge mode
– local mode
In the power off mode only the circuits needed for power up are supplied.
In the idle mode circuits are powered down and only sleep clock is run-
ning.
In the active mode all the circuits are supplied with power although some
parts might be in the idle state part of the time.
The charge mode is effective in parallel with all previous modes. The
charge mode itself consists of two different states, i.e. the fast charge and
the maintenance mode.
The local mode is used for alignment and testing.

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System Module
PAMS Technical Documentation
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Interconnection Diagram
Module
Radio
UP9
LCD
SIM Battery
Charger
Antenna
2+2
Earpiece
IR Link
64
2
Slide (mic.)
2
14
2
9
Keyboard
module
3
module
HF/HS
4

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System Module PAMS Technical Documentation
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System Module
Baseband Module
The baseband architecture supports a power saving function called ”sleep
mode”. This sleep mode shuts off the VCTCXO, which is used as system
clock source for both RF and baseband. During the sleep mode the sys-
tem runs from a 32 kHz crystal. The phone is waken up by a timer run-
ning from this 32 kHz clock supply. The sleeping time is determined by
some network parameters. The sleep mode is entered when both the
MCU and the DSP are in standby mode and the normal VCTCXO clock
has been switched off.
The battery charging is controlled by a PWM signal from the CCONT. The
PWM duty cycle is determined by a charging software and is fed to the
CHAPS charging switch.
Two types of chargers can be connected to the phone. Standard chargers
(two wires) provide coarse supply power, which is switched by the
CHAPS for suitable charging voltage and current. Advanced chargers
(three wires) are equipped with a control input. Three wire chargers are
treated like two wire ones.
Block Diagram
CCONT
UI
SIM
MAD
CHAPS
COBBA
BATTERY
PA SUPPLY
RF SUPPLIES
BB SUPPLY
TX/RX SIGNALS
BASEBAND
VBAT
+
MEMORIES
COBBA SUPPLY
EXT. AUDIO
IR
32kHz
CLK
13MHz
CLK
SLEEP CLOCK
SYSTEM CLOCK
HS–connector Charger
connector

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System Module
PAMS Technical Documentation
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Technical Summary
The baseband module consists four ASICs; CHAPS, CCONT, COBBA–
GJP and MAD2WD1, which take care of the baseband functions of the
engine.
The baseband is running from a 2.8V power rail, which is supplied by a
power controlling ASIC CCONT. MAD2WD1 supply voltages are VBB and
VCORE (V2V), VBB feeds I/O pins so that MAD2WD1 is externally fully
compatible with old versions. VCORE feeds MAD2WD1 internal fuctions
supplyoltage; CPU, DSP and system logic. In the CCONT there are 6 in-
dividually controlled regulator outputs for RF–section and two outputs for
the baseband. In addition there is one +5V power supply output (V5V).
The CCONT contains also a SIM interface, which supports both 3V and
5V SIM–cards. A real time clock function is integrated into the CCONT,
which utilizes the same 32kHz clock supply as the sleep clock. A backup
power supply is provided for the RTC, which keeps the real time clock
running when the main battery is removed. The backup power supply is a
rechargable battery. The backup time with the battery is ten minutes mini-
mum.
The interface between the baseband and the RF section is mainly han-
dled by a COBBA ASIC.COBBA provides A/D and D/A conversion of the
in–phase and quadrature receive and transmit signal paths and also A/D
and D/A conversions of received and transmitted audio signals to and
from the user interface. The COBBA supplies the analog TXC and AFC
signals to RF section according to the MAD DSP digital control. Data
transmission between the COBBA and the MAD is implemented using se-
rial bus for high speed signalling and for PCM coded audio signals. Digital
speech processing is handled by the MAD ASIC. COBBA is a dual volt-
age circuit, the digital parts are running from the baseband supply VBB
and the analog parts are running from the analog supply VCOBBA.
The baseband supports both internal and external microphone inputs and
speaker outputs. Input and output signal source selection and gain control
is done by the COBBA according to control messages from the MAD.
Keypad tones, DTMF, and other audio tones are generated and encoded
by the MAD and transmitted to the COBBA for decoding. A buzzer and an
external vibra alert control signals are generated by the MAD with sepa-
rate PWM outputs.
EMC shielding is implemented using a metallized plastic frame. On the
other side the engine is shielded with PCB grounding. Heat generated by
the circuitry will be conducted out via the PCB ground planes.

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External and Internal Signals and Connections
This section describes the external electrical connection and interface lev-
els on the baseband. The electrical interface specifications are collected
into tables that covers a connector or a defined interface.
DC (charger) connector
DC (charger) connector is physically integrated in the same component
with the accessory interface connector. DC connector has both jack and
contact pads for desk stand.
Service connector
Name Parameter Min Typ Max Unit Remark
MBUS Serial clock
from the
Prommer
0
2.0 logic low logic low 0.8 2.85 VPrommer detection and Seri-
al Clock for synchronous
communication
FBUS_RX Serial data
from the
Prommer
0
2.0 logic low logic high 0.8 2.85 VReceive Data from
Prommer to Baseband
FBUS_TX Data ac-
knowledge to
the Prommer
0
2.0 logic low logic high 0.5 2.85 VTransmit Data from Base-
band to Prommer
GND GND 0 0 V Ground
The service connector is used as a flash programming interface for up-
dating (i.e. re–programming) the flash program memory and an electrical
access for services to the engine.
When the flash prommer is connected to the phone supply power is pro-
vided through the battery contacts and the phone is powered up with a
pulse given to the BTEMP line.
Battery connector
The BSI contact on the battery connector is used to detect when the bat-
tery is to be removed to be able to shut down the operations of the SIM
card before the power is lost if the battery is removed with power on. The
BSI contact disconnects earlier than the supply power contacts to give
enough time for the SIM and LCD shut down.
Name Min Typ Max Unit Notes
VBATT 3.0 3.9 4.2 VBattery voltage
BSI 0 2.85 V Battery size indication
Phone has 100kohm pull up resistor.
SIM Card removal detection
(Treshold is 2.4V@VBB=2.8V)
68 kohm Battery indication resistor (BLB–2)
22 kohm Battery indication resistor (service battery)

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PAMS Technical Documentation
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NotesUnitMaxTypMinName
BTEMP 0 1.4 V Battery temperature indication
Phone has a 100k (+–5%) pullup resistor,
Battery package has a NTC pulldown resistor:
47k+–5%@+25C , B=4050+–3%
2.1
510 3 20 V ms Phone power up by battery (input) Power up pulse width
1.9
90 100 2.85 200 V ms Battery power up by phone (output) Power up pulse width
0 1 kohm Local mode initialization (in production)
BGND 0 0 V Battery ground
SIM card connector
The SIM card connector is located on the engine board beside the battery
pack.
Pin Name Parameter Min Typ Max Unit Notes
4 GND GND 0 0 V Ground
3, 5 VSIM 5V SIM Card
3V SIM Card 4.8 2.8 5.0 3.0 5.2 3.2 VSupply voltage
6 DATA 5V Vin/Vout
3V Vin/Vout
4.0
0
2.8
0
”1”
”0”
”1”
”0”
VSIM
0.5
VSIM
0.5
VSIM data
Trise/Tfall max 1us
2 SIMRST 5V SIM Card
3V SIM Card 4.0 2.8 ”1” ”1” VSIM VSIM VSIM reset
1 SIMCLK Frequency
Trise/Tfall 3.25 25 MHz ns SIM clock
RTC backup battery
The RTC block in CCONT needs a power backup to keep the clock run-
ning when the phone battery is disconnected. The backup power is sup-
plied from a rechargable polyacene battery that can keep the clock run-
ning ten minutes minimum. The backup battery is charged from the main
battery through CHAPS.
Signal Parameter Min Typ Max Unit Notes
VBACK Backup battery charg-
ing from CHAPS 3.02 3.15 3.28 V
Backup battery charg-
ing from CHAPS 100 200 500 uA Vout@VBAT–0.2V
VBACK Backup battery supply
to CCONT 2 3.28 V
Backup battery supply
to CCONT 80 uA

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Power Distribution
In normal operation the baseband is powered from the phone‘s battery.
The battery consists of one Lithium–Ion cell. An external charger can be
used for recharging the battery and supplying power to the phone.
The baseband contains parts that control power distribution to whole
phone excluding those parts that use continuous battery supply. The bat-
tery feeds power directly to the CCONT and UI (buzzer and display and
keyboard lights).
The power management circuit CHAPS provides protection against over-
voltages, charger failures and pirate chargers etc. that would otherwise
cause damage to the phone.
Baseband
Charger & headset connector
CHAPS
CCONTCOBBA GJP
MAD2 +
MEMORY
Battery connector
VChar
Vbatt
RF
CHRG_CTRL
VB
RF supply voltages
VCobba
Vbb
VCORE
UI
(LCD,
backlights,
buzzer)
RTC backup
Battery charging
The electrical specifications give the idle voltages produced by the ac-
ceptable chargers at the DC connector input. The absolute maximum in-
put voltage is 30V due to the transient suppressor that is protecting the
charger input. At phone end there is no difference between a plug–in
charger or a desktop charger. The DC–jack pins and bottom connector
charging pads are connected together inside the phone.

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VIN
CHAPS
10k
1n
PWM
VBAT
GND
CCONT
L_GND
CHARGER
PWM_OUT
TRANSCEIVER
0R22
VCHAR
ICHAR
100k
22k
1u
2A
30V
VCH
VOUT
RSENSE
GND
CCONTINT
MAD
LIM
MAD
Startup Charging
When a charger is connected, the CHAPS is supplying a startup current
minimum of 130mA to the phone. The startup current provides initial
charging to a phone with an empty battery. Startup circuit charges the
battery until the battery voltage level is reaches 3.0V (+/– 0.1V) and the
CCONT releases the PURX reset signal and program execution starts.
Charging mode is changed from startup charging to PWM charging that is
controlled by the MCU software. If the battery voltage reaches 3.55V
(3.75V maximum) before the program has taken control over the charg-
ing, the startup current is switched off. The startup current is switched on
again when the battery voltage is sunken 100mV (nominal).
Parameter Symbol Min Typ Max Unit
VOUT Start– up mode cutoff limit Vstart 3.45 3.55 3.75 V
VOUT Start– up mode hysteresis
NOTE: Cout = 4.7 uF Vstarthys 80 100 200 mV
Start–up regulator output current
VOUT = 0V ... Vstart Istart 130 165 200 mA
Battery Overvoltage Protection
Output overvoltage protection is used to protect phone from damage.
The power switch is immediately turned OFF if the voltage in VOUT rises
above the selected limit VLIM1 or VLIM2.
Parameter Symbol LIM input Min Typ Max Unit
Output voltage cutoff limit
(during transmission or Li–
battery)
VLIM LOW 4.4 4.6 4.8 V

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The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic
HIGH on the CHAPS (N101) VLIM input pin. VLIM is fixed low in hard-
ware.
When the switch in output overvoltage situation has once turned OFF, it
stays OFF until the the battery voltage falls below VLIM and PWM = LOW
is detected. The switch can be turned on again by setting PWM = HIGH.
PWM (32Hz)
VOUT
VLIM
t
SWITCH ON OFF
VCH
t
VCH<VOUT
ON

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Battery Removal During Charging
Output overvoltage protection is also needed in case the main battery is
removed when charger connected or charger is connected before the bat-
tery is connected to the phone.
With a charger connected, if VOUT exceeds VLIM, CHAPS turns switch
OFF until the charger input has sunken below Vpor (nominal 3.0V, maxi-
mum 3.4V). MCU software will stop the charging (turn off PWM) when it
detects that battery has been removed. The CHAPS remains in protection
state as long as PWM stays HIGH after the output overvoltage situation
has occured.
PWM
t
VOUT
t
4V
VLIM
”1”
”0”
SWITCH
t
ON
OFF 2
1.
1
Battery removed, (standard) charger connected, VOUT rises (follows charger voltage)
2. VOUT exceeds limit VLIM(X), switch is turned immediately OFF
3.
3
VOUT falls (because no battery) , also VCH<Vpor (standard chargers full–rectified
output). When VCH > Vpor and VOUT < VLIM(X) –> switch turned on again (also PWM
is still HIGH) and VOUT again exceeds VLIM(X).
4
4. Software sets PWM = LOW –> CHAPS does not enter PWM mode
Vstart
5
5. PWM low –> Startup mode, startup current flows until Vstart limit reached
VCH
(Standard
Charger)
Vpor
Vstarthys
Droop depends on load
Istart off due to VCH<Vpor
& C in phone
6
6. VOUT exceeds limit Vstart, Istart is turned off
7. VCH falls below Vpor
7

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PWM
When a charger is used, the power switch is turned ON and OFF by the
PWM input. PWM rate is 1Hz. When PWM is HIGH, the switch is ON and
the output current Iout = charger current – CHAPS supply current. When
PWM is LOW, the switch is OFF and the output current Iout = 0. To pre-
vent the switching transients inducing noise in audio circuitry of the phone
soft switching is used.
Battery Identification
Different battery types are identified by a pulldown resistor inside the bat-
tery pack. The BSI line inside transceiver has a 100k pullup to VBB. The
MCU can identify the battery by reading the BSI line DC–voltage level
with a CCONT (N100) A/D–converter.
Name Min Typ Max Unit Notes
BSI 0 2.8 V Battery size indication
100k pullup resistor to VBB in phone
SIM Card removal detection
(Treshold is 2.4V@VBB=2.8V)
68 kohm Indication of a BLB–2 battery (600 mAh Li–Ion)
22 kohm Indication resistor for a service battery
SIMCardDetX MAD
BSI CCONT
2.8V TRANSCEIVER
Rs
BATTERY
BSI
BGND
BTEMP
VBATT
10k
10n
100k
The battery identification line is used also for battery removal detection.
The BSI line is connected to a SIMCardDetX line of MAD2. SIMCardDetX
is a threshold detector with a nominal input switching level 0.85xVcc for a
rising edge and 0.55xVcc for a falling edge. The battery removal detection
is used as a trigger to power down the SIM card before the power is lost.
The BSI contact in the battery contact disconnects before the other con-
tacts so that there is a delay between battery removal detection and sup-
ply power off.

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0.550.05 Vcc
0.850.05 Vcc
Vcc
GND SIGOUT
SIMCARDDETX
Battery Temperature
The battery temperature is measured with a NTC inside the battery pack.
The BTEMP line inside transceiver has a 100k pullup to VREF. The MCU
can calculate the battery temperature by reading the BTEMP line DC–
voltage level with a CCONT (N100) A/D–converter.
Pin Name Min Typ Max Unit Notes
3 BTEMP 0 1.4 V Battery temperature indication
100k pullup resistor to VREF in phone
Battery package has NTC pull down resis-
tor:
47k +/–5%@+25C , B=4050+/–3%
2.1
510 3 20 V ms Phone power up by battery (input) Power up pulse width
47 kohm Service battery value
–5 5 % 100k pullup resistor tolerance
100k
VREF
TRANSCEIVER
R
T
BATTERY
BTEMP
BGND
BSI
VBATT
NTC
BTEMP CCONT
10k

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Supply Voltage Regulators
The heart of the power distrubution is the CCONT. It includes all the volt-
age regulators and feeds the power to the whole system. The baseband
digital parts are powered from the VBB regulator which provides 2.8V
baseband supply. The baseband regulator is active always when the
phone is powered on. The VBB baseband regulator feeds MAD and me-
mories, COBBA digital parts and the LCD driver in the UI section. There is
a separate regulator for a SIM card. The regulator is selectable between
3V and 5V and controlled by the SIMPwr line from MAD to CCONT. The
COBBA analog parts are powered from a dedicated 2.8V supply VCOB-
BA. The CCONT supplies also 5V for RF and for flash VPP. The CCONT
contains a real time clock function, which is powered from a RTC backup
when the main battery is disconnected. The RTC backup is rechargable
polyacene battery. The battery is charged from the main battery voltage
by the CHAPS when the main battery voltage is over 3.2V.
Operating mode Vref RF REG VCOBBA VBB VSIM SIMIF
Power off Off Off Off Off Off Pull
down
Power on On On/Off On On On On/Off
Reset On Off
VR1 On On On Off Pull down
Sleep On Off Off On On On/Off
NOTE: COBBA regulator is off in SLEEP mode. Its output pin may be fed
from VBB in SLEEP mode by setting bit RFReg(5) to ’1’ (default).
CCONT includes also five additional 2.8V regulators providing power to
the RF section. These regulators can be controlled either by the direct
control signals from MAD or by the RF regulator control register in
CCONT which MAD can update. Below are the listed the MAD control
lines and the regulators they are controlling.
– TxPwr controls VTX regulator (VR5)
– RxPwr controls VRX regulator (VR2)
– SynthPwr controls all the rf regulators except VR1
– VCXOPwr controls VXO regulator (VR1)
In additon to the above mentioned signals MAD includes also TXP control
signal which goes to HAGAR power control block. The transmitter power
control TXC is led from COBBA to HAGAR.

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Regulators output voltage characteristics:
Characteristics Condition Min Typ Max Unit
Output current VR1–VR6 V[email protected] 100 mA
Output current VR7
Depends on external BJT V[email protected] 150 mA
Output current VR7BASE
Base current limit V[email protected] –10 mA
Output current VBB On
Current limit 250mA
Output current VBB Sleep
Current limit 5mA
V[email protected]
V[email protected]
125
1
mA
mA
Output voltage VR1–VR7 over full tempera-
ture, input voltage
and load range
2.7 2.8 2.85 V
Output voltage VBB over full tempera-
ture, input voltage
and load range
2.7 2.8 2.85 V
Output voltage V2V (VCORE) Programmable:
Vout=1.3V+225mV
*n
N = 0,1,2,3,4,5,6
1.30 2.65 V
Output voltage V2V (VCORE) toler-
ance –5 +5 %
Line regulation (not VBB) F v10kHz,
2) VBAT>3.15V 49 DB
Line regulation (not VBB) F v100kHz,
2) VBAT>3.15v 40 DB
Line regulation VBB, V2V (VCORE) F v100kHz
2) 30 DB
Load regulation T = 25_C 0.6 1 mV/mA
Supply current (each regulator)
VR1...VR7 ON mode Iout/60+ 330 Iout/10+ 540 mA
Supply current VBB ON mode Iout/60+
250 Iout/10+ 400 mA
Supply current VBB SLEEP mode Iout/60+
100 Iout/10+ 150 mA
Output voltage V2V (VCORE) MAD2WD1 C10
MAD2WD1 C07
MAD2WD1 C05
2.65
1.75
1.75
V
NOTE 1: Characteristics above are NOT valid if Vbat < 3.0V.
NOTE 2: Line regulation is 20dB for f<100kHz when battery voltage is
lower than 3.1V.

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Switched Mode Supply VSIM
There is a switched mode supply for SIM–interface. SIM voltage is se-
lected via serial IO. The 5V SMR can be switched on independently of the
SIM voltage selection, but can’t be switched off when VSIM voltage value
is set to 5V.
NOTE: VSIM and V5V can give together a total of 30mA.
In the next figure the principle of the SMR / VSIM–functions is shown.
V5V
CCONT External
V5V_3
V5V_4
V5V_2
VBAT
5V
5V reg
VSIM
5/3V
Power Up and Power Down
The baseband is powered up by:
1. Pressing the power key, that generates a PWRONX interrupt
signal from the power key to the CCONT, which starts the pow-
er up procedure.
2. Connecting a charger to the phone. The CCONT recognizes
the charger from the VCHAR voltage and starts the power up
procedure.
3. A RTC interrupt. If the real time clock is set to alarm and the
phone is switched off, the RTC generates an interrupt signal,
when the alarm is gone off. The RTC interrupt signal is con-
nected to the PWRONX line to give a power on signal to the
CCONT just like the power key.
4. A battery interrupt. Intelligent battery packs have a possibility
to power up the phone. When the battery gives a short (10ms)
voltage pulse through the BTEMP pin, the CCONT wakes up
and starts the power on procedure.
Power up with a charger
When the charger is connected CCONT will switch on the CCONT digital
voltage as soon as the battery voltage exceeds 3.0V. The reset for