NXP Semiconductors RDGD3162I3PH5EVB User manual

UM11802
RDGD3162I3PH5EVB three-phase inverter reference design
Rev. 1 — 10 June 2022 User manual
Document information
Information Content
Keywords GD3162, gate, driver, power, inverter, automotive
Abstract The RDGD3162I3PH5EVB three-phase inverter is a functional hardware
power inverter reference design, which can be used as a foundation to
develop a complete ASIL D compliant high voltage, high-power traction motor
inverter for electric vehicles.

NXP Semiconductors UM11802
RDGD3162I3PH5EVB three-phase inverter reference design
Rev Date Description
1 20220610 initial version
Revision history
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RDGD3162I3PH5EVB three-phase inverter reference design
1 Important notice
IMPORTANT NOTICE
For engineering development or evaluation purposes only
NXP provides the product under the following conditions:
This evaluation kit is for use of ENGINEERING DEVELOPMENT OR
EVALUATION PURPOSES ONLY. It is provided as a sample IC pre-soldered
to a printed-circuit board to make it easier to access inputs, outputs and
supply terminals. This evaluation board may be used with any development
system or other source of I/O signals by connecting it to the host MCU
computer board via off-the-shelf cables. This evaluation board is not
a Reference Design and is not intended to represent a final design
recommendation for any particular application. Final device in an application
heavily depends on proper printed-circuit board layout and heat sinking
design as well as attention to supply filtering, transient suppression, and I/O
signal quality.
The product provided may not be complete in terms of required design,
marketing, and or manufacturing related protective considerations, including
product safety measures typically found in the end device incorporating the
product. Due to the open construction of the product, it is the responsibility of
the user to take all appropriate precautions for electric discharge. In order to
minimize risks associated with the customers’ applications, adequate design
and operating safeguards must be provided by the customer to minimize
inherent or procedural hazards. For any safety concerns, contact NXP sales
and technical support services.
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RDGD3162I3PH5EVB three-phase inverter reference design
2 RDGD3162I3PH5EVB
Figure 1. RDGD3162I3PH5EVB
3 Introduction
This document is the user guide for the RDGD3162I3PH5EVB reference design.
This document is intended for the engineers involved in the evaluation, design,
implementation, and validation of the GD3162 single-channel gate driver for insulated
gate bipolar transistor (IGBT)/SiC.
The scope of this document is to provide the user with information to evaluate the
GD3162 single channel gate driver for IGBT/SiC. This document covers connecting the
hardware, installing the software and tools, configuring the environment and using the kit.
The RDGD3162I3PH5EVB is a fully functional three-phase inverter evaluation board
populated with six GD3162 gate drivers with fault management and supporting circuitry.
This board supports serial peripheral interface (SPI) daisy chain communication for
programming and communication with three high-side gate drivers and three low-side
gate drivers independently, or all six gate drivers at the same time.
This board has low-voltage isolation and high-voltage isolation with gate drive integrated
galvanic signal isolation. Other supporting features on the board include desaturation
short-circuit detection, IGBT/SiC temperature sensing, onboard isolated flyback supplies,
DC link bus voltage monitoring, phase current sensing, DC link bus current sense, and
motor resolver excitation/processing. See GD3162 data sheet for additional gate drive
features.
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RDGD3162I3PH5EVB three-phase inverter reference design
4 Finding kit resources and information on the NXP website
NXP Semiconductors provides online resources for this reference design and its
supported devices on http://www.nxp.com.
The information page for RDGD3162I3PH5EVB reference design is at http://
www.nxp.com/RDGD3162I3PH5EVB. The information page provides overview
information, documentation, software and tools, parametrics, ordering information
and a Getting Started tab. The Getting Started tab provides quick reference
information applicable to using the RDGD3162I3PH5EVB reference design, including the
downloadable assets referenced in this document.
4.1 Collaborate in the NXP community
The NXP community is for sharing ideas and tips, ask and answer technical questions,
and receive input on just about any embedded design topic.
The NXP community is at http://community.nxp.com.
5 Getting ready
Working with the RDGD3162I3PH5EVB requires kit contents and a Windows PC
workstation with FlexGUI software installed.
5.1 Kit contents
•Assembled and tested RDGD3162I3PH5EVB (three-phase inverter populated with
5.0 V compatible gate driver devices) board in an anti-static bag
•KITGD316xTREVB 3.3 V to 5.0 V translator with FRDM-KL25Z MCU board with micro
USB cable
•Quick start guide
5.2 Additional hardware
In addition to the kit contents, the following hardware is necessary or beneficial when
working with this reference board.
•Microcontroller for SPI communication
•Compatible P6 IGBT or SiC metal-oxide-semiconductor field-effect transistor
(MOSFET) module
•DC link capacitor compatible with HybridPACK drive or P6 IGBT or SiC MOSFET
module
•HV power supply with protection shield and hearing protection
•Current sensors for monitoring each phase current
•12 V, 1.0 A DC power supply
•4-channel oscilloscope with appropriate isolated probes
5.3 Windows PC workstation
This reference design requires a Windows PC workstation. Meeting these minimum
specifications produces great results when working with this evaluation board.
•USB-enabled computer with Windows 8 or Windows 10
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NXP Semiconductors UM11802
RDGD3162I3PH5EVB three-phase inverter reference design
5.4 Software
Installing software is necessary to work with this reference design. All listed software is
available on the information page at http://www.nxp.com/RDGD3162I3PH5EVB.
•FlexGUI software for using with KITGD316xTREVB MCU/translator board
•S32S Design Studio IDE for power architecture
•Automotive Math and Motor Control Library (AMMCLib)
•FreeMASTER 2.0 runtime debugging tool
•Motor control application tuning (MCAT)
•Example code, GD3162 device driver notes, and GD31xx device driver reference
6 Getting to know the hardware
6.1 RDGD3162I3PH5EVB features
•Capability to perform double pulse and short-circuit tests on phase U using
KITGD316xTREVB and FlexGUI; see phase U schematics and FlexGUI pulse tab
(Figure 24 and Figure 25)
•Evaluation board designed for and populated with GD3162 gate drivers and protection
circuitry
•Capability to connect to HybridPACK drive type SiC specific modules for full
three-phase evaluation and development (see Figure 9 for specific module pin
placement)
•Daisy chain SPI communication × 3 - 2 channel (three high-side gate drivers and three
low-side gate drivers) or × 6 - 1 channel (all six gate drivers)
•Variable flyback VCC power supply with GND reference and variable negative VEE
supply
•Easy access power, ground, and signal test points
•2 × 32 Peripheral Component Interconnect Express (PCIe) socket for interfacing MCU
control (MPC5775B/E-EVB, MPC5777C-DEVB, or MPC57744P); see Figure 26 and
Figure 27
•Optional connection for DC bus voltage and current monitoring
•Phase current feedback connections
•Resolver signal connector
6.2 Kit featured components
6.2.1 Voltage domains, GD3162 pinout, logic header, and IGBT pinout
Low-voltage domain is an externally supplied 12 V DC (VPWR) primary supply for
non-isolated circuits, typically supplied by vehicle battery. A 5 V regulator supplies VDD
to GD3162 gate drive devices. The low-voltage domain includes the interface between
the MCU and GD3162 control registers and logic control.
Low-side driver and high-side driver domains are isolated high-voltage driver control
domains for SiC MOSFET or IGBT single phase connections and control circuits. Pins
on bottom of board are designed to easily connect to a compatible three-phase SiC
MOSFET or IGBT module.
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RDGD3162I3PH5EVB three-phase inverter reference design
Figure 2. RDGD3162I3PH5EVB three-phase inverter board voltage domains and interfaces
6.2.2 GD3162 pinout and MCU interface pinout
See GD3162 advanced IGBT/SiC gate driver data sheet for specific information about
pinout, pin descriptions, specifications, and operating modes. VSUP/VPWR DC supply
terminal is a low-voltage input connection for supplying power to the low-voltage
non-isolated die and related circuitry. Typically supplied by vehicle battery +12 V DC.
MCU connector is a 2 × 32-pin PCIe interface connector for use with either
MPC5775B/E-EVB or MPC5744P or MPC5777C 32-bit MCU board or any other MCU of
preference. An MCU is needed for SPI communication and control of advanced IGBT/SiC
gate drive devices (GD3162).
KITGD316xTREVB included with the kit can be attached to this board at bottom of dual
row header pin interface. All gate drivers can be accessed via SPI control using FlexGUI
software.
Note: Double pulse and short-circuit tests can be conducted on phase U only. See
FlexGUI pulse tab Figure 24 and Figure 25.
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NXP Semiconductors UM11802
RDGD3162I3PH5EVB three-phase inverter reference design
Figure 3. Gate driver pinout and board interface connection PCIe 2 × 32
Pin Name Function
A1 VDDA voltage reference resolver circuit
A2 GNDA1 analog ground
A3 PH_U_I current feedback phase U
A4 PH_V_I current feedback phase V
A5 PH_W_I current feedback phase W
A6 n.c. not connected
A7 n.c. not connected
A8 SIN_OUT_RSLV sine resolver signal
A9 COS_OUT_RSLV cosine resolver signal
A10 n.c. not connected
A11 GNDA4 analog ground
A12 VCC_PER 5.0 V MCU not connected
Table 1. PCIe connector pin definitions
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RDGD3162I3PH5EVB three-phase inverter reference design
Pin Name Function
A13 GND2 ground
A14 PWMHU pulse width modulation (PWM) high-side phase U
A15 PWMLU pulse width modulation low-side phase U
A16 PWMHV pulse width modulation high-side phase V
A17 PWMLV pulse width modulation low-side phase V
A18 PWMHW pulse width modulation high-side phase W
A19 PWMLW pulse width modulation low-side phase W
A20 GSENLU GD3162 gate strength enable low-side phase U
A21 GSENHU GD3162 gate strength enable high-side phase U
A22 GSENLV GD3162 gate strength enable low-side phase V
A23 GSENHV GD3162 gate strength enable high-side phase V
A24 GSENLW GD3162 gate strength enable low-side phase W
A25 GSENHW GD3162 gate strength enable high-side phase W
A26 INTB_HS GD3162 fault reporting for high-side gate drive devices
A27 INTB_LS GD3162 fault reporting for low-side gate drive devices
A28 INTA_HU GD3162 fault reporting and real-time monitoring high-side phase U
A29 INTA_LU GD3162 fault reporting and real-time monitoring low-side phase U
A30 CSBH chip select bar to high gate drive devices
A31 INTA_HV GD3162 fault reporting and real-time monitoring high-side phase V
A32 INTA_LV GD3162 fault reporting and real-time monitoring low-side phase V
B1 VREF voltage reference from MCU
B2 GNDA2 analog ground
B3 IDC_BUS optional DC bus current measurement from DC bus current filter
B4 VBUS_DIV optional DC bus voltage divider monitoring (not used by default)
B5 n.c. not connected
B6 n.c. not connected
B7 n.c. not connected
B8 SIN_N_OUT_RSLV sine resolver signal
B9 COS_N_OUT_RSLV cosine resolver signal
B10 n.c. not connected
B11 GNDA3 analog ground
B12 MCU_VCC MCU VCC regulator voltage
B13 GND1 ground
B14 AOUTHU GD3162 analog output signal high-side U phase
B15 AOUTLU GD3162 analog output signal low-side U phase
B16 AOUTLV GD3162 analog output signal low-side V phase
Table 1. PCIe connector pin definitions...continued
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RDGD3162I3PH5EVB three-phase inverter reference design
Pin Name Function
B17 AOUTHV GD3162 analog output signal high-side V phase
B18 AOUTLW GD3162 analog output signal low-side W phase
B19 RES_REF resolver reference voltage
B20 SW_RUN signal from onboard switch demo mode
B21 MISO_MICRO SPI slave out signal
B22 MOSI_MICRO SPI slave in signal
B23 SCLK SPI clock
B24 CSBL chip select bar to low-side gate drivers
B25 AOUTHW GD3162 analog output signal high-side W phase
B26 INTA_HW GD3162 fault reporting and real-time monitoring high-side phase W
B27 INTA_LW GD3162 fault reporting and real-time monitoring low-side phase W
B28 FSENB fail-safe state enable bar
B29 FSSTATEL fail-safe state low-side
B30 FSSTATEH fail-safe state high-side
B31 VPWR VPWR/VSUP 12 V voltage supply (low-voltage domain)
B32 GNDP ground connection (low-voltage domain)
Table 1. PCIe connector pin definitions...continued
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NXP Semiconductors UM11802
RDGD3162I3PH5EVB three-phase inverter reference design
6.2.3 Test points
All test points are clearly marked on the board. Figure 4 shows the location of various
test points.
Figure 4. RDGD3162I3PH5EVB test points
Test point name Function
DSTHU DESAT high-side U phase VCE desaturation connected to DESAT pin circuitry
DSTHV DESAT high-side V phase VCE desaturation connected to DESAT pin circuitry
DSTHW DESAT high-side W phase VCE desaturation connected to DESAT pin circuitry
DSTLU DESAT low-side U phase VCE desaturation connected to DESAT pin circuitry
DSTLV DESAT low-side V phase VCE desaturation connected to DESAT pin circuitry
DSTLW DESAT low-side W phase VCE desaturation connected to DESAT pin circuitry
FSISHU FSISO connection high-side U phase
FSISHV FSISO connection high-side V phase
FSISLU FSISO connection low-side U phase
FSISLV FSISO connection low-side V phase
FSISLW FSISO connection low-side W phase
GHU gate high-side U phase which is the charging pin of IGBT gate
GHV gate high-side V phase which is the charging pin of IGBT gate
GHW gate high-side W phase which is the charging pin of IGBT gate
Table 2. Test points
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RDGD3162I3PH5EVB three-phase inverter reference design
Test point name Function
GLU gate low-side U phase which is the charging pin of IGBT gate
GLV gate low-side V phase which is the charging pin of IGBT gate
GLW gate low-side W phase which is the charging pin of IGBT gate
INTA – UVW HS and LS INTA interrupt/real-time reporting output signal test points from each gate driver
Resolver circuit test points for internal signals of resolver circuit (see schematic for more information)
MCU signals signal headers for analyzing all MCU signals (see schematic for signals)
TSNSHU TSENSE high-side U phase connected to negative temperature coefficient (NTC) temperature
sense
TSNSLU TSENSE low-side U phase
VREFLU 5.0 V reference voltage test point low-side U phase
VREFHU 5.0 V reference voltage test point high-side U phase
VREFLV 5.0 V reference voltage test point low-side V phase
VREFHV 5.0 V reference voltage test point high-side V phase
VREFLW 5.0 V reference voltage test point low-side W phase
VREFHW 5.0 V reference voltage test point high-side W phase
VSUP VSUP/VPWR test point low-voltage domain
Table 2. Test points...continued
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NXP Semiconductors UM11802
RDGD3162I3PH5EVB three-phase inverter reference design
6.2.4 Indicators
The RDGD3162I3PH5EVB contains LEDs as visual indicators on the board.
Figure 5. RDGD3162I3PH5EVB indicator locations
Name Description
INTBL LED indicates that a GD3162 INTB fault interrupt has occurred on the low side
INTBH LED indicates that a GD3162 INTB fault interrupt has occurred on the high side
Table 3. RDGD3162I3PH5EVB indicator descriptions
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RDGD3162I3PH5EVB three-phase inverter reference design
6.2.5 Connectors and jumpers
Figure 6. RDGD3162I3PH5EVB connector and jumper locations
Name Description
J9 solder jumper 1-2 default - DC supply for VSUP to gate drivers supplied through J99
terminal connection
jumper open VSUP supply to gate drivers isolated
J101 jumper 1-2 default master output slave input (MOSI) - normal mode three device daisy
chain three device high side, three device low side (× 3 - 2 channel)
jumper 2-3 MOSI - six device daisy chain all six gate drivers daisy chained together
(× 6 - 1 channel)
J102 jumper 1-2 default master input slave output (MISO) - normal mode three device daisy
chain three device high side, three device low side (× 3 - 2 channel)
jumper 2-3 MISO - six device daisy chain all six gate drivers daisy chained together
(× 6 - 1 channel)
J103 DC bus current measurement connection header
Phase current feedback
connector
current feedback connections from U, V, and W phases
Resolver signals connector resolver excitation signals (see schematic for more information)
MCU signals two-row header of all MCU signals for debug and development (see schematic for details)
PCIe/MCU connector 2 × 32 PCIe connector for easy connection to MPC5777CDEVB or MPC5744P via PCIe
cable (S32SDEV-CON18)
J99 VPWR terminal connector used for external low-voltage power supply connection, typically 12 V VBAT
Table 4. RDGD3162I3PH5EVB connector and jumper descriptions
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RDGD3162I3PH5EVB three-phase inverter reference design
6.2.6 Power supply test points
Figure 7. Power supply test point locations
Name Function
VCCHU high-side phase U VCC voltage test point
isolated positive voltage supply (9.3 V to 25 V)
GNDHU isolated ground high-side phase U
VEEHU negative gate supply voltage high-side phase U
VCCHV high-side phase V VCC voltage test point
isolated positive voltage supply (9.3 V to 25 V)
GNDHV isolated ground high-side phase V
VEEHV negative gate supply voltage high-side phase V
VCCHW high-side phase W VCC voltage test point
isolated positive voltage supply (9.3 V to 25 V)
GNDHW isolated ground high-side phase W
VEEHW negative gate supply voltage high-side phase W
VCCLU low-side phase U VCC voltage test point
isolated positive voltage supply (9.3 V to 25 V)
GNDLU isolated ground low-side phase U
VEELU negative gate supply voltage low-side phase U
VCCLV low-side phase V VCC voltage test point
isolated positive voltage supply (9.3 V to 25 V)
Table 5. Power supply test point descriptions
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NXP Semiconductors UM11802
RDGD3162I3PH5EVB three-phase inverter reference design
Name Function
GNDLV isolated ground low-side phase V
VEELV negative gate supply voltage low-side phase V
VCCLW low-side phase W VCC voltage test point
isolated positive voltage supply (9.3 V to 25 V)
GNDLW isolated ground low-side phase W
VEELW negative gate supply voltage low-side phase W
VPWR +12 V DC VPWR low voltage positive supply connection
VPWR GND VPWR low voltage supply ground connection (GND1)
Table 5. Power supply test point descriptions...continued
6.2.7 Gate drive resistors
•RGH_1 - gate high resistor in series with the GH_1 pin at the output of the GD3162
high-side driver and IGBT/SiC gate that controls the strong turn on current for IGBT/SiC
gate.
•RGH_2 - gate high resistor in series with the GH_2 pin at the output of the GD3162
high-side driver and IGBT/SiC gate that controls the weak turn on current for IGBT/SiC
gate.
•RGL_1 - gate low resistor in series with the GL_1 pin at the output of the GD3162
low-side driver and IGBT/SiC gate that controls the strong turn off current for IGBT/SiC
gate.
•RGL_2 - gate low resistor in series with the GL_2 pin at the output of the GD3162
low-side driver and IGBT/SiC gate that controls the weak turn off current for IGBT/SiC
gate.
•RAMC - series resistor between IGBT/SiC gate and active Miller clamp (AMC) input pin
of the GD3162 high-side/low-side driver for gate sensing and active Miller clamping.
Figure 8. Gate drive resistors for each phase high side and low side
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NXP Semiconductors UM11802
RDGD3162I3PH5EVB three-phase inverter reference design
6.2.8 SiC module pin connections
aaa-046433
Ø5.30 ±0.15
2
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.
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90.75 ±0.40
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4.25 ±0.40
25 ±0.40
14 ±0.20
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(27.33)
(55.30)
(74.67)
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B
G
G
CØ1.6
6x (N1-N3;P1-P3)
A
Ø4.50 ±0.15 (8x)
4.30 ±0.15
Figure 9. SiC module pin placement
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RDGD3162I3PH5EVB three-phase inverter reference design
Figure 10. SiC module pin connections
Connection name Pin description
G_HU gate high-side U phase
E_HW emitter/drain connection high-side U phase
COL_HU collector/source connection high-side U phase
NTCU1 NTC temperature sensor connection U phase (high-side TSENSEA)
NTCU2 NTC temperature sensor connection U phase (high-side isolated ground)
G_LU gate low-side U phase
COL_LU collector/source connection low-side U phase
E_LU emitter/drain connection low-side U phase
NTCV1 NTC temperature sensor connection V phase (high-side TSENSEA)
NTCV2 NTC temperature sensor connection V phase (high-side isolated ground)
G_HV gate high-side V phase
COL_HV collector/source connection high-side V phase
E_HV emitter/drain connection high-side V phase
G_LV gate low-side V phase
E_LV emitter/drain connection low-side V phase
COL_LV collector/source connection low-side V phase
NTCW1 NTC temperature sensor connection W phase (high-side TSENSEA)
NTCW2 NTC temperature sensor connection W phase (high-side isolated ground)
G_HW gate high-side W phase
Table 6. SiC module pin connections
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RDGD3162I3PH5EVB three-phase inverter reference design
Connection name Pin description
E_HW emitter/drain connection high-side W phase
COL_HW collector/source connection high-side W phase
G_LW gate low-side W phase
E_LW emitter/drain connection low-side W phase
COL_LW collector/source connection low-side W phase
Table 6. SiC module pin connections...continued
6.3 Kinetis KL25Z Freedom board
The Freedom KL25Z is an ultra low-cost development platform for Kinetis L series MCU
built on Arm Cortex-M0+ processor.
Figure 11. Freedom development platform
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RDGD3162I3PH5EVB three-phase inverter reference design
6.4 3.3 V to 5.0 V translator board
KITGD316xTREVB translator enables level shifting of signals from MCU 3.3 V to 5.0 V
SPI communication.
Figure 12. Translator board
Jumper Position Function
1-2 selects 5.0 V for 5.0 V compatible gate driveVCCSEL (J3)
2-3 selects 3.3 V for 3.3 V compatible gate drive
1-2 selects PWM high-side control from KL25Z MCUPWMH_SEL (J4)
2-3 selects PWM high-side control from fiber optic receiver inputs
1-2 selects PWM low-side control from KL25Z MCUPWML_SEL (J5)
2-3 selects PWM low-side control from fiber optic receiver inputs
Table 7. Translator board jumper definitions
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