Panasonic Transistors 2SB1462J User manual

Transistors
1
Publication date: June 2007 SJC00087CED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1462J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216J
■Features
•High forward current transfer ratio hFE
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −60 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−100 mA
Peak collector current ICP −200 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −60 V
Collector-emitter voltage (Base open) VCEO IC=−100 µA, IB=0 −50 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −7V
Collector-base cutoff current (Emitter open) ICBO VCB =−20 V, IE=0 −0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =−10 V, IE=0 −100 µA
Forward current transfer ratio hFE VCE =−10 V, IC=−2 mA 160 460 
Collector-emitter saturation voltage *1VCE(sat) IC=−100 mA, IB=−10 mA −0.3 −0.5 V
Transition frequency fTVCB =−10 V, IE=1 mA, f =200 MHz 80 MHz
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 2.7 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.27 ±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00 ±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Unit: mm
Marking Symbol: A

2SB1462J
2SJC00087CED
This product complies with the RoHS Directive (EU 2002/95/EC).
ICVBE VCE(sat) IChFE IC
PCTaICIBIBVBE
Cob VCB
0 16040 12080 14020 10060
0
150
125
100
75
50
25
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0−360−300−240−60 −180−120
0
−120
−100
−80
−60
−40
−20
VCE =−10 V
Ta=25°C
Base current IB(µA)
Collector current IC(mA)
0−1.2−1.0−0.8−0.2 −0.6−0.4
0
−1 200
−1 000
−800
−600
−400
−200
V
CE
=−10 V
T
a
=25°C
Base-emitter voltage VBE (V)
Base current I
B
(µA)
0−1.2−1.0−0.8−0.2 −0.6−0.4
0
−120
−100
−80
−60
−40
−20
VCE =−10 V
Ta=75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current IC(mA)
−1−10 −100 −1 000
−0.001
−0.01
−0.1
−1
−10 IC/ IB=10
−25°C
Ta=75°C
25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
−1−10 −100 −1 000
0
360
300
240
180
120
60
V
CE
=−10 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−1−10 −100
0
6
5
4
3
2
1
f =1 MHz
I
E
=0
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)

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