Panasonic Multi Chip Discrete UP05C8G User manual

Multi Chip Discrete
Publication date: November 2005 SJJ00348AED 1
UP05C8G
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
Basic Part Number
2SC3932 +CCD load device
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Tr
Collector-base voltage
(Emitter open) VCBO 30 V
Collector-emitter voltage
(Base open) VCEO 20 V
Emitter-base voltage
(Collector open) VEBO 3 V
Collector current IC50 mA
CCD
load
device
Limiting element voltage Vmax 40 V
Limiting element current Imax 10 mA
Overall
Total power dissipation *PT125 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Note) *: Measuring on substrate at 17 mm ×10 mm ×1 mm
Marking Symbol: 4V
Internal Connection
3
(G)
(S)
4
1
(E) 2 (B)
(C)
6(D) 5
Tr FET
Unit: mm
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
SSMini6-F1 Package
(0.30) 0.10±0.02
6 5 4
1 2 3 5°
5°
0.20+0.05
–0.02
1.60±0.050.55±0.05
0.10 max.
0 to 0.02
(0.20)
1.60±0.05
1番ピン端子表示
1.20±0.05
(0.20)
1.00±0.05
(0.50)(0.50)

UP05C8G
2SJJ00348AED
Electrical Characteristics Ta= 25°C±3°C
Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= 100 mA, IE= 0 30 V
Emitter-base voltage (Collector open) VEBO IE= 10 mA, IC= 0 3 V
Base-emitter voltage VBE VCE = 10 V, IC= 2 mA 720 mV
Forward current transfer ratio hFE VCE = 10 V, IC= 2 mA 25 250 
Transition frequency *fTVCB = 10 V, IE= -15 mA, f = 200 MHz 800 1 200 MHz
Power gain GPVCB = 10 V, IE= -1 mA, f = 100 MHz 20 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
*: Pulse measurement
CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current IPVDS = 10 V, VG= 0 3.5 5.5 mA
Output impedance ZOVDS = 10 V, VG= 0 0.05 MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
PTTa
Common characteristics chart
0 40 80 120
0
140
120
100
80
40
20
60
Total power dissipation PT(mW)
Ambient temperature Ta(°C)
UN05C8B_PT-Ta
ICVCE ICIBIBVBE
Characteristics charts of Tr
0 42 8 106 12
0
35
30
25
40
5
20
15
10
Collector current IC(mA)
Collector-emitter voltage VCE (V)
UP05C8G_IC-VCE
Ta=25°C
IB=300 µA
200 µA
150 µA
100 µA
50 µA
250 µA
0 0.4 0.60.2 1.00.8 1.2
0
50
40
60
10
30
20
Collector current IC(mA)
Base current IB(mA)
UP05C8G_IC-IB
VCE =10 V
0.40.20.1 0.3 0.5 0.6 0.7 0.8 0.9
0
0
0.7
0.6
0.8
0.2
0.1
0.3
0.5
0.4
Base current IB(mA)
Base-emitter voltage VBE (V)
UP05C8G_IB-VBE
VCE =10 V
Ta=25°C

UP05C8G
SJJ00348AED 3
ICVBE VCE(sat) IChFE IC
Cob VCB
0 0.4 0.60.2 1.20.8 1.0 1.4
0
40
50
10
20
30
Collector current IC(mA)
Base-emitter voltage VBE (V)
UP05C8G_IC-VBE
VCE =10 V
Ta=85°C
−25°C
25°C
0 2515 20105 30 35
100
1
10
0.1
UP05C8B_ Cob - VCB
Ta= 25°C
f = 1 MHz
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
0.1 1 10 100
0.1
1
0.01
UP05C8G_ VCE(sat) - IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
IC/ IB= 10
Ta= 85°C
25°C
−25°C
1 10 100
50
300
200
250
150
100
350
0
UP05C8G_ hFE - IC
Forward current transfer ratio hFE
Collector current IC(mA)
Ta= 85°C
−25°C
25°C
VCE = 10 V
IPVDS
Characteristics charts of CCD load device
0 42 14106 8 12 16
0
3.5
4.0
3.0
4.5
0.5
1.0
2.0
2.5
1.5
Peak current IP(mA)
Drain-source voltage VDS (V)
UP05C8G_IP-VDS
VG=0

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