Panasonic Transistors 2SB1722G User manual

Transistors
1
Publication date: May 2007 SJC00389AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1722G
Silicon PNP epitaxial planar type
For high breakdown voltage low-frequency amplification
■Features
•High collector-emitter voltage (Base open) VCEO
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −100 V
Collector-emitter voltage (Base open) VCEO −100 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−20 mA
Peak collector current ICP −50 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta=25°C ±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −100 V
Collector-emitter voltage (Base open) VCEO IC=−1 mA, IB=0 −100 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −5V
Collector-base cutoff current (Emitter open) ICBO VCB =−50 V, IE=0 −100 nA
Collector-emitter cut-off current (Base open) ICEO VCE =−50 V, IB=0 −1µA
Forward current transfer ratio hFE VCE =−10 V, IC=−2 mA 200 700 
Collector-emitter saturation voltage VCE(sat) IC=−10 mA, IB=−1 mA −0.3 V
Transition frequency fTVCB =−5 V, IE=2 mA, f =200 MHz 200 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■Package
•Code
SSMini3-F3
•Marking Symbol: 4R
•Pin Name
1. Base
2. Emitter
3. Collector

2SB1722G
2SJC00389AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) IChFE ICCob VCB
PCTaICVCE ICVBE
Ambient temperature Ta(°C)
Collector power dissipation PC(mW)
0 1507525 12550 100
0
150
50
125
100
25
75
0−12−10−8−2−6−4
0
−35
−30
−25
−20
−15
−10
−5
Collector-emitter voltage VCE (V)
Collector current I
C
(mA)
−2.0 mA
I
B
=−5.0 mA
T
a
=25°C
−4.5 mA
−4.0 mA
−2.5 mA
−3.0 mA
−3.5 mA
−1.5 mA
−1.0 mA
− 0.5 mA
0
0− 0.2 − 0.4 − 0.6 − 0.8 −1
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
VCE =−10 V
Ta=85°C−25°C
25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
−1
− 0.1
− 0.01
− 0.01 − 0.1−1−10 −100
25°C
T
a
=85°C
−25°C
I
C
/I
B
=10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−1−10 −100
0
500
300
250
350
400
450
200
150
100
50
V
CE
=−10 V
T
a
=85°C
−25°C
25°C
0−20 −30−10 −40
0.1
10
1
100
Collector output capacitance (Common base, input open circuited) Cob (pF)
Collector-base voltage VCB (V)
f =1 MHz
Ta=25°C

This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3 Unit: mm
1.00 ±0.05
(0.50) (0.50)
1.60 +0.05 −0.03
0.26 +0.05 −0.02
12
3
0.85 +0.05
−0.03
1.60 ±0.05
0.70 +0.05
−0.03
0 to 0.10
(5°)
(0.45)
0.13 +0.05
−0.02
0.375 ±0.05
(5°)

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