Panasonic Transistors 2SC3935 User manual

Transistors
1
Publication date: February 2004 SJC00145CED
2SC3935
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■Features
•High transition frequency fT
•Small collector output capacitance (Common base, input open cir-
cuited) Cob and reverse transfer capacitance (Common base) Crb
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC=2 mA, IB=010V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=03V
Collector-base cutoff current (Emitter open) ICBO VCB =10 V, IE=01µA
Collector-emitter cutoff current (Base open) ICEO VCE =10 V, IB=010µA
Forward current transfer ratio hFE1 *1VCE =2.4 V, IC=7.2 mA 75 220 
hFE2 VCE =2.4 V, IC=100 µA75
hFE ratio ∆hFE *2hFE2: VCE =2.4 V, IC=100 µA 0.75 1.60 
hFE1: VCE =2.4 V, IC=7.2 mA
Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB=4 mA 0.5 V
Transition frequency fTVCB =4 V, IE=−7.2 mA, f =200 MHz 1.4 1.9 2.5 GHz
Collector output capacitance Cob VCB =4 V, IE=0, f =1 MHz 0.9 1.1 pF
(Common base, input open circuited)
Reverse transfer capacitance Crb VCB =4 V, IE=0, f =1 MHz 0.25 0.35 pF
(Common base)
Collector-base parameter rbb' • CCVCB =4 V, IE=−5 mA, f =31.9 MHz 11.8 13.5 ps
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
Rank P Q
hFE 75 to 130 110 to 220
2.1±0.1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65) (0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9+0.2
–0.1
0.15+0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 1S
*2: ∆hFE =hFE2 / hFE1
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3935
2SJC00145CED
VCE(sat) IChFE ICfTIE
PCTaICVCE ICVBE
Cob VCB
0 16040 12080
0
200
160
120
80
40
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
012108264
0
80
60
20
40
T
a
=25°C
400 µA
300 µA
200 µA
100 µA
I
B
=500 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 2.01.60.4 1.20.8
0
60
50
40
30
20
10
V
CE
=4 V
T
a
=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0.1 1 10 100
0
360
300
240
180
120
60
V
CE
=4 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−0.1 −1−10 −100
0
4
3
1
2
VCB =4 V
Ta=25°C
Transition frequency fT(GHz)
Emitter current IE(mA)
1 10 100
0
1.6
1.2
0.4
0.8
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

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