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  9. Panasonic 2SD0592 User manual

Panasonic 2SD0592 User manual

Transistors
Publication date: May 2006 SJC00344AED
1
2SD0592
(2SD592)
Silicon NPN epitaxial planar type
For low frequency amplifi cation
Complementary to 2SB0621 (2SB621)

Features
 Features

Large collector power dissipation P
 Large collector power dissipation P
C

Low collector-emitter saturation voltage V
 Low collector-emitter saturation voltage V
CE(sat)

Absolute Maximum Ratings
 Absolute Maximum Ratings 
T
a
= 25
a = 25
a
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
25
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
1
A
Peak collector current
I
CP
1.5
A
Collector power dissipation
P
C
750
mW
Junction temperature
T
j
Tj
T
150
°
C
Storage temperature
T
stg
Tstg
T
–55 to +150
°
C

Electrical Characteristics
 Electrical Characteristics 
T
a
= 25
a = 25
a
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10
C = 10
C
µ
A, I
E
= 0
E = 0
E
30
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
C = 2 mA, I
C
B
= 0
25
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10
E = 10
E
µ
A, I
C
= 0
C = 0
C
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
E = 0
E
0.1
µ
A
Forward current transfer ratio
h
FE1
hFE1
h
*
V
CE
= 10 V, I
CE = 10 V, I
CE
C
= 500 mA
C = 500 mA
C
85
340

h
FE2
hFE2
h
V
CE
= 5 V, I
CE = 5 V, I
CE
C
= 1 A
C = 1 A
C
50
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 500 mA, I
C = 500 mA, I
C
B
= 50 mA
0.2
0.4
V
Base-emitter saturation voltage
V
BE(sat)
VBE(sat)
V
I
C
= 500 mA, I
C = 500 mA, I
C
B
= 50 mA
0.85
1.2
V
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
E = 0, f = 1 MHz
E
20
pF
Transition frequency
f
T
fT
f
V
CB
= 10 V, I
E
= —50 mA, f = 200 MHz
E = —50 mA, f = 200 MHz
E
200
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classifi cation
Rank
Q
R
S
h
FE1
hFE1
h
85 to 170
120 to 240
170 to 340
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
5.0±0.2
0.7±0.1
0.45+0.15
–0.1
2.5+0.6
–0.2
0.45+0.15
–0.1
2.5
1 2 3
+0.6
–0.2
4.0±0.2
5.1±0.212.9±0.5
2.3±0.2 0.7±0.2
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0592
2
SJC00344AED
P
C

T
 T
a
Ta
T
I
a I
a
C

V
 V
CE
I
CE I
CE
C

I
 I
B
V
CE(sat)

I
 I
C
V
BE(sat)
VBE(sat)
V

I
 I
C
h
C h
C
FE
hFE
h

I
 I
C
0 16040 12080
0
1.0
0.8
0.6
0.4
0.2
Collector power dissipation PC (W)
Ambient temperature Ta (°C)
0 1082 64
0
1.50
1.25
1.00
0.75
0.50
0.25
Ta = 25°C
IB = 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current IC (A)
Collector-emitter voltage VCE (V)
0 121082 64
0
1.2
1.0
0.8
0.6
0.4
0.2
VCE = 10 V
Ta = 25°C
Base current IB (mA)
Collector current IC (A)
0.01 0.1 1 10
0.001
0.01
0.1
1
10 IC / IB = 10
Ta = 75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
0.01 0.1 1 10
0.01
0.1
1
10
100 IC / IB = 10
Ta = −25°C
25°C
75°C
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC (A)
0.01 0.1 1 10
0
600
500
400
300
200
100
Ta = 75°C
25°C
−25°C
VCE = 10 V
Forward current transfer ratio hFE
Collector current IC (A)
f
T
fT
f

I
 I
E
C
E C
E
ob

V
 V
CB
V
CER

R
 R
BE
RBE
R
−1−10 −100
0
200
160
120
80
40
180
140
100
60
20
VCB = 10 V
Ta = 25°C
Transition frequency fT (MHz)
Emitter current IE (mA)
1 10 100
0
50
40
30
20
10
IE = 0
f = 1 MHz
Ta = 25°C
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0.1 1 10 100
0
120
100
80
60
40
20
IC = 10 mA
Ta = 25°C
Base-emitter resistance RBE (kΩ)
Collector-emitter voltage
(Resistor between B and E) VCER (V)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0592
2SD0592
SJC00344AED
3
I
CEO

T
 T
a
Ta
T
0 16040 12080
1
10
102
103
104VCE = 10 V
Ambient temperature Ta (°C)
ICEO (Ta)
ICEO (Ta = 25°C)
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.

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