Panasonic 2SA1022 User manual

Transistors
1
Publication date: February 2003 SJC00009BED
2SA1022
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC2295
■Features
•High frequency voltage fT
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −30 V
Collector-emitter voltage (Base open) VCEO −20 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−30 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage VBE VCE =−10 V, IC=−1 mA −0.7 V
Collector-base cutoff current (Emitter open) ICBO VCB =−10 V, IE=0 −0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =−20 V, IB=0 −100 µA
Emitter-base cutoff current (Collector open) IEBO VEB =−5 V, IC=0 −10 µA
Forward current transfer ratio *hFE VCE =−10 V, IC=−1 mA 70 220 
Collector-emitter saturation voltage VCE(sat) IC=−10 mA, IB=−1 mA −0.1 V
Transition frequency fTVCB =−10 V, IE=1 mA, f =200 MHz 150 300 MHz
Noise figure NF VCB =−10 V, IE=1 mA, f =5 MHz 2.8 dB
Reverse transfer impedance Zrb VCB =−10 V, IE=1 mA, f =2 MHz 22 Ω
Reverse transfer capacitance Cre VCE =−10 V, IC=−1 mA, f =10.7 MHz 1.2 pF
(Common emitter)
■Electrical Characteristics Ta=25°C ±3°C
0.40
+0.10
–0.05
(0.65) 1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2 –0.1
1.1
+0.3 –0.1
Rank B C
hFE 70 to 140 110 to 220
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1022
2SJC00009BED
hFE ICCob VCB Cre VCE
PCTaICVCE VCE(sat) IC
fTIEGPICNF IE
0 16040 12080
0
240
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0−10−8−2−6−4
0
−30
−25
−20
−15
−10
−5
T
a
=25°C
I
B
=−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
−0.1 −1−10 −100
−0.01
−0.1
−1
−10
−100 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
−0.1 −1−10 −100
0
120
100
80
60
40
20
VCE =−10 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
−0.1 −1−10 −100
0
6
5
4
3
2
1
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
−1−10 −100
0
5
4
3
2
1
I
C
=−1 mA
f =10.7 MHz
T
a
=25°C
Collector-emitter voltage V
CE
(V)
Reverse transfer capacitance C
re
(pF)
(Common emitter)
0.1 1 10 100
0
600
500
400
300
200
100
V
CB
=−10 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
−0.1 −1−10 −100
0
24
20
16
12
8
4
V
CE
=−10 V
f =100 MHz
T
a
=25°C
Power gain G
P
(dB)
Collector current I
C
(mA)
0.1 1 10
0
5
4
3
2
1
V
CB
=−10 V
f =100 MHz
T
a
=25°C
Noise figure NF (dB)
Emitter current I
E
(mA)
This product complies with the RoHS Directive (EU 2002/95/EC).

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