Panasonic 2SD1824 User manual

Transistors
1
Publication date: April 2003 SJC00230BED
2SD1824
Silicon NPN epitaxial planar type
For low-frequency amplification
■Features
•High forward current transfer ratio hFE
•Low collector-emitter saturation voltage VCE(sat)
•High emitter-base voltage (Collector open) VEBO
•S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 100 V
Collector-emitter voltage (Base open) VCEO 100 V
Emitter-base voltage (Collector open) VEBO 15 V
Collector current IC20 mA
Peak collector current ICP 50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=0 100 V
Collector-emitter voltage (Base open) VCEO IC=1 mA, IB=0 100 V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=015V
Collector-base cutoff current (Emitter open) ICBO VCB =60 V, IE=0 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =60 V, IB=01µA
Forward current transfer ratio *hFE VCE = 10 V, IC= 2 mA 400 1 200 
Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1 mA 0.05 0.20 V
Transition frequency fTVCB =10 V, IE=−2 mA, f =200 MHz 90 MHz
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2.1
±0.1
1.3 ±0.1
0.3
+0.1
–0.0
2.0 ±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5°
10°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Rank R S
hFE 400 to 800 600 to 1 200
Marking symbol: 1V
This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1824
2SJC00230BED
VCE(sat) IChFE ICfTIE
PCTaICVCE ICVBE
Cob VCB NV ICNV VCE
0 16040 12080
0
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
012108264
0
80
60
20
40
T
a
=25°C
20 µA
30 µA
40 µA
50 µA
60 µA
80 µA
10 µA
I
B
=100 µA
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0 2.01.60.4 1.20.8
0
60
50
40
30
20
10
V
CE
=10 V
T
a
=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
=10
25°C
−25°C
T
a
=75°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0.1 1 10 100
0
1 800
1 500
1 200
900
600
300
V
CE
=10 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−0.1 −1−10 −100
0
200
160
120
80
40
V
CB
=10 V
T
a
=25°C
Transition frequency fT(MHz)
Emitter current IE(mA)
1 10 100
0
6
5
4
3
2
1
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
0.01 0.1 1
0
100
80
60
40
20
V
CE
=10 V
G
V
=80 dB
Function =FLAT
T
a
=25°C
5 kΩ
R
g
=100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector current IC(mA)
1 10 100
0
100
80
60
40
20 I
C
=1 mA
G
V
=80 dB
Function =FLAT
T
a
=25°C
5 kΩ
R
g
=100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector-emitter voltage V
CE
(V)
This product complies with the RoHS Directive (EU 2002/95/EC).

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