Panasonic 2SC5609G User manual

Transistors
Publication date : November 2008 SJC00427BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2021G
Features
High forward current transfer ratio hFE
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7 V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= 10 mA, IE= 0 60 V
Collector-emitter voltage (Base open) VCEO IC= 2 mA, IB= 0 50 V
Emitter-base voltage (Collector open) VEBO IE= 10 mA, IC= 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE= 0 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB= 0 100 mA
Forward current transfer ratio hFE1 VCE = 10 V, IC= 2 mA 180 390

hFE2 * VCE = 2 V, IC= 100 mA 90
Collector-emitter saturation voltage VCE(sat) IC= 100 mA, IB= 10 mA 0.1 0.3 V
Transition frequency fTVCB = 10 V, IE= –2 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
Cre VCB = 10 V, IE= 0, f = 1 MHz 3.5 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Package
Code
SSSMini3-F2
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 3F

2SC5609G
2SJC00427BED
This product complies with the RoHS Directive (EU 2002/95/EC).
ICVBE IBVBE VCE(sat) IC
0 40 12080
0
140
40
60
20
100
120
80
2SD5609G_PC-Ta
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0 4 8 12
0
10
20
30
40
50
2SC5609G_IC-VCE
Collector current IC(mA)
Collector-emitter voltage VCE (V)
Ta= 25°C
60 µA
100 µA
80 µA
120 µA
140 µA
IB= 160 µA
40 µA
20 µA
0 0.2 0.6 0.8 1.00.4 1.2
0
20
40
60
80
100
160
140
120
180
2SC5609G_IC-IB
Collector current IC(mA)
Base current IB(V)
VCE = 10 V
Ta= 25°C
0 0.40.2 0.80.6 1.0
0
40
20
60
100
80
120
2SC5609G_IC-VBE
Collector current IC(mA)
Base-emitter voltage VBE (V)
Ta= 75°C
25°C
−25°C
0 0.40.2 0.80.6
0
40
20
60
80
100
2SC5609G_IB-VBE
Base current IB(mA)
Base-emitter voltage VBE (V)
VCE = 10 V
1 10 100 1 000
0.01
0.1
1
Collector current IC(mA)
Collector-emitter saturation voltage VCE(sat) (V)
2SC5609G_VCE(sat)-IC
IC/IB=10
Ta= 75°C
25°C
−25°C
1 10 100 1 000
0
320
400
80
240
160
Collector current IC(mA)
Forward current transfer ratio hFE
2SC5609G_hFE-IC
VCE =10 V
Ta= 75°C
25°C
−25°C
hFE IC
PCTaICVCE ICIB

2SC5609G
SJC00427BED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.20 +0.05 −0.02 0.13 +0.05
−0.02
(0.4)
(0.4)
0.80 ±0.05
0.80 ±0.05
0.51 ±0.04
1.20 ±0.05
1.20 ±0.05
0.20 ±0.05
3
12
(0.27)
5°
0 to 0.05 (0.5)
5°

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