Panasonic 2SD0602A User manual

Transistors
Publication date: October 2008 SJC00191DED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0602A
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB0710A
Features
Low collector-emitter saturation voltage VCE(sat)
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 5 V
Collector current IC500 mA
Peak collector current ICP 1 A
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= 10 mA, IE= 0 60 V
Collector-emitter voltage (Base open) VCEO IC= 10 mA, IB= 0 50 V
Emitter-base voltage (Collector open) VEBO IE= 10 mA, IC= 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE= 0 0.1 mA
Forward current transfer ratio *1hFE1 *2VCE = 10 V, IC= 150 mA 85 340 
hFE2 VCE = 10 V, IC= 500 mA 40 
Collector-emitter saturation voltage *1VCE(sat) IC= 300 mA, IB= 30 mA 0.35 0.60 V
Transition frequency fTVCB = 10 V, IE= -50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = 10 V, IE= 0, f = 1 MHz 6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Marking symbol XQ XR XS X
Product of no-rank is not classified and have no indication for rank.
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: X

2SD0602A
2SJC00191DED
This product complies with the RoHS Directive (EU 2002/95/EC).
040 80 120 160
0
80
160
240
2SD0602_ PC-Ta
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
2SD0602_ IC-VCE
Collector current IC(mA)
Collector-emitter voltage VCE (V)
16 208 124
00
800
600
200
500
700
400
100
300
IB=10 mA
9 mA
8 mA
1 mA
2 mA
3 mA
4 mA
5 mA
6 mA
7 mA
Ta=25°C
084
0
200
600
800
400
2SD0602_ IC-IB
Collector current IC(mA)
Base current IB(mA)
VCE =10 V
Ta =25°C
2SD0602_ VCE(sat)-IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
10−1 1 10
10−2
10−1
102
10
1
10−2
IC / IB =10
Ta =75°C
−25°C
25°C
2SD0602_ VBE(sat)-IC
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC(mA)
10−210−11 10
10−2
10−1
102
10
1
IC / IB =10
Ta =−25°C
25°C
75°C
2SD0602_ hFE-IC
Forward current transfer ratio hFE
Collector current IC(mA)
0
300
250
200
150
100
50
Ta =75°C
25°C
−25°C
1 10
VCE =10 V
10−210−1
2SD0602_ fT-IE
Transition frequency fT(MHz)
Emitter current IE(mA)
−1−10 −100
0
240
200
160
120
80
40
VCB =10 V
Ta =25°C
2SD0602_ Cob-VCB
Collector-base voltage VCB (V)
0
12
10
8
6
4
2
110 102
IE =0
f=1 MHz
Ta =25°C
Collector output capacitance (Common base, input open circuited) Cob (pF)
110 103
102
0
40
80
120
2SD0602_ VCER-RBE
Base-emitter resistance RBE (kΩ)
IC =2 mA
Ta =25°C
Collector-emitter voltage (Resistor between B and E) VCER (V)
PCTaICVCE ICIB
VCE(sat) ICVBE(sat) IChFE IC
fTIECob VCB VCER RBE

2SD0602A
SJC00191DED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
Mini3-G1 Unit: mm
(0.95)
(0.95)
1.9 ±0.1
0.40
1.50
2.8
2.90
3
2
1
5°
0.4 ±0.2
0.16
10°
1.1
1.1
0 to 0.1 (0.65)
+0.10
−0.05
+0.25 −0.05
+0.2 −0.3
+0.20
−0.05
+0.2 −0.1
+0.3 −0.1
+0.10
−0.05

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semiconductors described in this book
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