Panasonic 2SC5848 User manual

Transistors
Publication date : December 2004 SJC00327AED 1
2SC5848
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2079
 Features
 High forward current transfer ratio hFE
 Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
 Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
 Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1µA
Collector-emitter cut-off current (Base open) ICEO VCE = 10 V, IB = 0 100 µA
Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 180 390 
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3V
Transition frequency fTVCB = 10 V, IE = –2 mA, f = 200 MHz 100 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 2.2pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector ML3-N2 Package
0.60±0.05
1.00±0.05
2
1
3
0.39+0.01
−0.03
0.25±0.05 0.25±0.05
0.50±0.05
0.65±0.01
0.15±0.05
2
1
0.35±0.01
0.05±0.03
0.05±0.03
3
Marking Symbol : 3E
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC5848
2 SJC00327AED
PC  Ta IC  VCE IC  IB
IB  VBE IC  VBE VCE(sat)  IC
020 40 60 80 100 120 140
0
20
40
60
80
100
120
2SC5848_ PC-Ta
Collector power dissipation PC (mW)
Ambient temperature Ta (°C)
0 42 6 8 10 12
0
50
40
30
20
10
2SC5848_IC-VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
IB = 160 µA
140 µA
100 µA
80 µA
60 µA
40 µA
20 µA
120 µA
Ta = 25°C
0 0.2 0.4 0.6 0.8 1.0
0
140
120
100
80
60
40
20
2SC5848_IC-IB
Collector current IC (mA)
Base current IB (mA)
VCE = 10 V
Ta = 25°C
0 0.2 0.4 0.6 0.8
0
3.5
0.5
1.0
1.5
2.0
2.5
3.0
2SC5848_IB-VBE
Base current IB (mA)
Base-emitter voltage VBE (V)
VCE = 10 V
Ta = 25°C
0 0.2 0.4 0.6 0.8 1.0 1.2
0
20
40
60
80
100
120
2SC5848_IC-VBE
Collector current IC (mA)
Base-emitter voltage VBE (V)
VCE = 10V
Ta = 75°C–25°C
25°C
1 10 100
0.01
0.1
1
2SC5848_VCE(sat)-IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
Ta = 75°C
–25°C
25°C
IC / IB = 10
hFE  IC Cob  VCB
1 10 100 1 000
0
50
100
150
200
250
300
350
Collector current IC (mA)
Forward current transfer ratio hFE
2SC5848_hFE-IC
Ta = 75°C
–25°C
25°C
VCE = 10 V
0 168 24 32 40
1
10
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
2SC5848_Cob-VCB
f = 1 MHz
Ta = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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