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Philips Magnetoresistive Sensor Configuration guide

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2000 Sep 06
DISCRETE SEMICONDUCTORS
General
Magnetoresistive sensors for
magnetic field measurement
2000 Sep 06 2
Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement General
CONTENTS
General field measurement
•Operating principles
•Philips magnetoresistive sensors
•Flipping
•Effect of temperature on behaviour
•Using magnetoresistive sensors
•Further information for advanced users
•Appendix 1: The magnetoresistive effect
•Appendix 2: Sensor flipping
•Appendix 3: Sensor layout.
Fig.1 Philips magnetoresistive sensors.
2000 Sep 06 3
Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement General
The KMZ range of magnetoresistive sensors is
characterized by high sensitivity in the detection of
magneticfields,awideoperatingtemperaturerange,alow
and stable offset and low sensitivity to mechanical stress.
They therefore provide an excellent means of measuring
both linear and angular displacement under extreme
environmental conditions, because their very high
sensitivity means that a fairly small movement of actuating
components in, for example, cars or machinery (gear
wheels, metal rods, cogs, cams, etc.) can create
measurable changes in magnetic field. Other applications
for magnetoresistive sensors include rotational speed
measurement and current measurement.
Examples where their properties can be put to good effect
can be found in automotive applications, such as wheel
speed sensors for ABS and motor management systems
and position sensors for chassis position, throttle and
pedal position measurement. Other examples include
instrumentation and control equipment, which often
require position sensors capable of detecting
displacements in the region of tenths of a millimetre (or
even less), and in electronic ignition systems, which must
be able to determine the angular position of an internal
combustion engine with great accuracy.
Finally, because of their high sensitivity, magnetoresistive
sensors can measure very weak magnetic fields and are
thus ideal for application in electronic compasses, earth
field correction and traffic detection.
Ifthe KMZ sensorsare to beused to maximumadvantage,
however, it is important to have a clear understanding of
their operating principles and characteristics, and how
theirbehaviourmay be affected byexternal influences and
by their magnetic history.
Operating principles
Magnetoresistive (MR) sensors make use of the
magnetoresistive effect, the property of a current-carrying
magnetic material to change its resistivity in the presence
of an external magnetic field (the common units used for
magnetic fields are given in Table 1).
Table 1 Common magnetic units
The basic operating principle of an MR sensor is shown in
Fig.2.
Figure 2 shows a strip of ferromagnetic material, called
permalloy (19%Fe, 81%Ni). Assume that, when no
external magnetic field is present, the permalloy has an
internal magnetization vector parallel to the current flow
(shown to flow through the permalloy from left to right).
If an external magnetic field H is applied, parallel to the
plane of the permalloy but perpendicular to the current
flow,the internal magnetization vector of the permalloy will
rotate around an angle α. As a result, the resistance of R
of the permalloy will change as a function of the rotation
angle α, as given by:
(1)
Roand ∆Roare material parameters and to achieve
optimum sensor characteristics Philips use Fe19Ni81,
which has a high Rovalue and low magnetostriction. With
this material, ∆Rois of the order of 3%. For more
information on materials, see Appendix 1.
It is obvious from this quadratic equation, that the
resistance/magneticfieldcharacteristicisnon-linearandin
addition, each value of R is not necessarily associated
with a unique value of H (see Fig.3). For more details on
the essentials of the magnetoresistive effect, please refer
to the Section “Further information for advanced users”
laterin this chapter or Appendix 1, whichexaminestheMR
effect in detail.
1 kA/m = 1.25 mTesla (in air)
1 mT = 10 Gauss
Fig.2 The magnetoresistive effect in permalloy.
handbook, halfpage
MLC127
I
Magnetization
Permalloy
H
Current
α
R = R ∆R cos α
2
00
RR
O∆R
O
cos2α+=
2000 Sep 06 4
Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement General
In this basic form, the MR effect can be used effectively for
angular measurement and some rotational speed
measurements, which do not require linearization of the
sensor characteristic.
In the KMZ series of sensors, four permalloy strips are
arranged in a meander fashion on the silicon (Fig.4 shows
one example, of the pattern on a KMZ10). They are
connected in a Wheatstone bridge configuration, which
has a number of advantages:
•Reduction of temperature drift
•Doubling of the signal output
•The sensor can be aligned at the factory.
Fig.3 The resistance of the permalloy as a
function of the external field.
handbook, halfpage
MLC128
H
R
Fig.4 KMZ10 chip structure.
handbook, full pagewidth
MBC930
,,,,,
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2000 Sep 06 5
Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement General
Two further resistors, RT, are included, as shown in Fig.5.
Theseare for trimming sensoroffset down to(almost) zero
during the production process.
Forsome applications however, the MReffectcanbeused
to its best advantage when the sensor output
characteristic has been linearized. These applications
include:
•Weak field measurements, such as compass
applications and traffic detection;
•Current measurement; and
•Rotational speed measurement.
For an explanation of how the characteristic is linearized,
please refer to the Section “Further information for
advanced users” later in this chapter.
Philips magnetoresistive sensors
Based on the principles described, Philips has a family of
basic magnetoresistive sensors. The main characteristics
of the KMZ sensors are given in Table 2.
Fig.5 Bridge configuration with offset trimmed to
zero, by resistors RT.
handbook, halfpage
MLC129
2 1
GND VO
VCC VO
RTRT
34
Table 2 Main characteristics of Philips sensors
Notes
1. In air, 1 kA/m corresponds to 1.25 mT.
2. Data given for operation with switched auxiliary field.
SENSOR
TYPE PACKAGE FIELD
RANGE
(kA/m)(1)
VCC
(V)
SENSITIVITY Rbridge
(kΩ)
LINEARIZE
MR
EFFECT
APPLICATION
EXAMPLES
KMZ10A SOT195 −0.5 to +0.5 ≤9 16.0 1.2 Yes compass, navigation, metal
detection, traffic control
KMZ10A1(2) SOT195 −0.05 to +0.05 ≤9 22.0 1.3 Yes
KMZ10B SOT195 −2.0 to +2.0 ≤12 4.0 2.1 Yes current measurement,
angular and linear position,
reference mark detection,
wheel speed
KMZ10C SOT195 −7.5 to +7.5 ≤10 1.5 1.4 Yes
KMZ51 SO8 −0.2 to +0.2 ≤8 16.0 2.0 Yes compass, navigation, metal
detection, traffic control
KMZ52 SO16 −0.2 to +0.2 ≤8 16.0 2.0 Yes
mV V⁄()
kA m⁄()
---------------------
2000 Sep 06 6
Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement General
Flipping
The internal magnetization of the sensor strips has two
stable positions. So, if for any reason the sensor is
influenced by a powerful magnetic field opposing the
internal aligning field, the magnetization may flip from one
position to the other, and the strips become magnetized in
the opposite direction (from, for example, the ‘+x’ to the
‘−x’ direction). As demonstrated in Fig.6, this can lead to
drastic changes in sensor characteristics.
The field (e.g. ‘−Hx’) needed to flip the sensor
magnetization, and hence the characteristic, depends on
the magnitude of the transverse field ‘Hy’: the greater the
field ‘Hy’, the smaller the field ‘−Hx’. This follows naturally,
since the greater the field ‘Hy’, the closer the
magnetization's rotation approaches 90°, and hence the
easier it will be to flip it into a corresponding stable position
in the ‘−x’ direction.
Looking at the curve in Fig.7 where Hy= 0.5 kA/m, for
such a low transverse field the sensor characteristic is
stable for all positive values of Hxand a reverse field of
≈1 kA/m is required before flipping occurs. At Hy= 2 kA/m
however, the sensor will flip even at smaller values of ‘Hx’
(at approximately 0.5 kA/m).
Fig.6 Sensor characteristics.
handbook, halfpage
MLC130
0
2424
O
(mV)
H (kA/m)
y
V
10
10
reversal
of sensor
characteristics
Fig.7 Sensor output ‘Vo’ as a function of the auxiliary field ‘Hx’ for several values of transverse field ‘Hy’.
handbook, full pagewidth
MLC131
0
1231
O
(mV)
H (kA/m)
x
H =
2 kA/m
y
0.5 kA/m
V
50
100
100
50
2
3
2000 Sep 06 7
Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement General
Figure 7 also shows that the flipping itself is not
instantaneous, because not all the permalloy strips flip at
thesamerate.Inaddition, it illustrates the hysteresis effect
exhibited by the sensor. For more information on sensor
flipping, see Appendix 2 of this chapter.
Effect of temperature on behaviour
Figure 8 shows that the bridge resistance increases
linearly with temperature, due to the bridge resistors’
temperature dependency (i.e. the permalloy) for a typical
KMZ10B sensor. The data sheets show also the spread in
this variation due to manufacturing tolerances and this
should be taken into account when incorporating the
sensors into practical circuits.
In addition to the bridge resistance, the sensitivity also
varies with temperature. This can be seen from Fig.9,
which plots output voltage against transverse field ‘Hy’ for
various temperatures. Figure 9 shows that sensitivity falls
with increasing temperature (actual values for given for
every sensor in the datasheets). The reason for this is
rather complex and is related to the energy-band structure
of the permalloy strips. Fig.8 Bridge resistance of a KMZ10B sensor as
a function of ambient temperature.
handbook, halfpage
40 160
3
1
MBB897
2
0 40 80 120
T ( C)
o
amb
bridge
R(kΩ)
2000 Sep 06 8
Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement General
Fig.9 Output voltage ‘Vo’ as a fraction of the supply voltage of a KMZ10B sensor as a function of transverse field
‘Hy’ for several temperatures.
handbook, full pagewidth
3
0
15 32 2
MLC134
5
10
10
5
15
0
11H (kA/m)
y
VO
(mV/V) T = 25 C
amb o
25 C
o
75 C
o
125 C
o
operating range
2000 Sep 06 9
Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement General
Figure 10 is similar to Fig.9, but with the sensor powered
by a constant current supply. Figure 10 shows that, in this
case, the temperature dependency of sensitivity is
significantly reduced. This is a direct result of the increase
in bridge resistance with temperature (see Fig.8), which
partly compensates the fall in sensitivity by increasing the
voltage across the bridge and hence the output voltage.
Figure 8 demonstrates therefore the advantage of
operating with constant current.
Fig.10 Output voltage ‘Vo’ of a KMZ10B sensor as a function of transverse field ‘Hy’ for several temperatures.
handbook, full pagewidth
0
75 42
MLC135
25
50
50
25
75
2
04
H (kA/m)
y
VO
(mV/V)
T = 25 C
amb o
25 C
o
75 C
o
125 C
o
operating range
2000 Sep 06 10
Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement General
Using magnetoresistive sensors
The excellent properties of the KMZ magnetoresistive
sensors, including their high sensitivity, low and stable
offset, wide operating temperature and frequency ranges
and ruggedness, make them highly suitable for use in a
wide range of automotive, industrial and other
applications. These are looked at in more detail in other
chapters in this book; some general practical points about
using MR sensors are briefly described below.
ANALOG APPLICATION CIRCUITRY
In many magnetoresistive sensor applications where
analog signals are measured (in measuring angular
position, linear position or current measurement, for
example), a good application circuit should allow for
sensor offset and sensitivity adjustment. Also, as the
sensitivity of many magnetic field sensors has a drift with
temperature,thisalsoneeds compensation. A basic circuit
is shown in Fig.11.
In the first stage, the sensor signal is pre-amplified and
offset is adjusted. After temperature effects are
compensated, final amplification and sensitivity
adjustment takes place in the last stage. This basic circuit
can be extended with additional components to meet
specific EMC requirements or can be modified to obtain
customized output characteristics (e.g. a different output
voltage range or a current output signal).
Philips magnetoresistive sensors have a linear sensitivity
drift with temperature and so a temperature sensor with
linear characteristics is required for compensation. Philips
KTY series are well suited for this purpose, as their
positive Temperature Coefficient (TC) matches well with
the negative TC of the MR sensor. The degree of
compensation can be controlled with the two resistors R7
and R8 and special op-amps, with very low offset and
temperature drift, should be used to ensure compensation
is constant over large temperature ranges.
Please refer to part 2 of this book for more information on
the KTY temperature sensors; see also the Section
“Further information for advanced users” later in this
chapter for a more detailed description of temperature
compensation using these sensors.
USING MAGNETORESISTIVE SENSORS WITH A COMPENSATION
COIL
For general magnetic field or current measurements it is
useful to apply the ‘null-field’ method, in which a magnetic
field (generated by a current carrying coil), equal in
magnitude but opposite in direction, is applied to the
sensor. Using this ‘feedback’ method, the current through
the coil is a direct measure of the unknown magnetic field
amplitudeand ithastheadvantagethat the sensorisbeing
operated at its zero point, where inaccuracies as result of
tolerances, temperature drift and slight non-linearities in
the sensor characteristics are insignificant. A detailed
discussion of this method is covered in Chapter “Weak
field measurement”.
Fig.11 Basic application circuit with temperature compensation and offset adjustment.
handbook, full pagewidth
MBH687
3
4
1
2
KMZ10B
offset
adjustment
R3
22 kΩ
R4
14 kΩ
R2
500 kΩ
R1
100 kΩ
2
34
1
8R6
KTY82-210
TLC2272
R5
140 kΩ
R7
2.4 kΩ
R8
2.4 kΩ
R9
33 kΩ
R10
33 kΩ
6
5
7
IC1
R11
22 kΩ
R12
150 kΩ
sensitivity
adjustment
C1
10 nF
V = 5 V
S
V = 0.2 V to 4.8 V
O
(with resistive load
greater than 10 kΩ)
op-amp op-amp