Philips PiP3209-R Owner's manual

Philips Semiconductors Product Specification
TOPFET high side switch PiP3209-R
DESCRIPTION QUICK REFERENCE DATA
Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT
protected power switch in
TOPFET2 technology assembled in ILNominal load current (ISO) 2 A
a 5 pin plastic surface mount
package. SYMBOL PARAMETER MAX. UNIT
APPLICATIONS VBG Continuous off-state supply voltage 50 V
General controller for driving ILContinuous load current 6 A
lamps, motors, solenoids, heaters. TjContinuous junction temperature 150 ˚C
RON On-state resistance Tj= 25˚C 180 mΩ
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1Ground
2Input
3 (connected to mb)
4Status
5Load Fig. 2. Fig. 3.
mb Battery
BATT
LOAD
INPUT
GROUND
STATUS POWER
MOSFET
RG
CONTROL &
PROTECTION
CIRCUITS
mb
12 45
3
B
G
L
I
S
HSS
TOPFET
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Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VBG Continuous supply voltage 0 50 V
ILContinuous load current Tmb ≤114˚C - 6 A
PDTotal power dissipation Tmb ≤25˚C - 41 W
Tstg Storage temperature -55 175 ˚C
TjContinuous junction temperature1- 150 ˚C
Tsold Mounting base temperature during soldering - 260 ˚C
Reverse battery voltages2
-VBG Continuous reverse voltage - 16 V
-VBG Peak reverse voltage - 32 V
Application information
RI, RSExternal resistors3to limit input, status currents 3.2 - kΩ
Input and status
II, ISContinuous currents -5 5 mA
II, ISRepetitive peak currents δ≤0.1, tp = 300 µs -50 50 mA
Inductive load clamping IL= 1 A, VBG = 16 V
EBL Non-repetitive clamping energy Tj= 150˚C prior to turn-off - 75 mJ
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCElectrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance4
Rth j-mb Junction to mounting base - - 2.5 3 K/W
1 For normal continuous operation. A higher Tjis allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
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Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R
STATIC CHARACTERISTICS
Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
VBG Battery to ground IG= 1 mA 50 55 65 V
VBL Battery to load IL= IG= 1 mA 50 55 65 V
-VLG Negative load to ground IL= 10 mA 18 23 28 V
-VLG Negative load voltage1IL= 1 A; tp= 300 µs202530V
Supply voltage battery to ground
VBG Operating range2- 5.5 - 35 V
Currents 9 V ≤VBG ≤16 V
IBQuiescent current3VLG = 0 V - - 20 µA
Tmb = 25˚C - 0.1 2 µA
ILOff-state load current4VBL = VBG --20µA
Tmb = 25˚C - 0.1 1 µA
IGOperating current5IL= 0 A - 2 4 mA
ILNominal load current6VBL = 0.5 V 2 - - A
Resistances VBG ILtpTmb
RON On-state resistance79 to 35 V 1 A 300 µs 25˚C - 135 180 mΩ
150˚C - - 330 mΩ
RON On-state resistance 6 V 1 A 300 µs 25˚C - 170 225 mΩ
150˚C - - 410 mΩ
RGInternal ground resistance IG= 10 mA 95 150 190 Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tprefers only to the applied load current.
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Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R
INPUT CHARACTERISTICS
9 V ≤VBG ≤16 V. Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IIInput current VIG = 5 V 20 90 160 µA
VIG Input clamping voltage II= 200 µA 5.5 7 8.5 V
VIG(ON) Input turn-on threshold voltage - 2.4 3 V
VIG(OFF) Input turn-off threshold voltage 1.5 2.1 - V
∆VIG Input turn-on hysteresis - 0.3 - V
II(ON) Input turn-on current VIG = 3 V - - 100 µA
II(OFF) Input turn-off current VIG = 1.5 V 10 - - µA
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VSG Status clamping voltage IS= 100 µA 5.5 7 8.5 V
VSG Status low voltage IS= 100 µA--1V
Tmb = 25˚C - 0.7 0.8 V
ISStatus leakage current VSG = 5 V - - 15 µA
Tmb = 25˚C - 0.1 1 µA
ISStatus saturation current1VSG = 5 V 2 7 12 mA
Application information
RSExternal pull-up resistor - 47 - kΩ
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C ≤Tmb ≤150˚C and typical is at Tmb = 25 ˚C.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Open circuit detection 9 V ≤VBG ≤35 V
IL(TO) Low current detect threshold 50 - 340 mA
Tj= 25˚C 85 170 255 mA
∆IL(TO) Hysteresis - 30 - mA
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
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Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Undervoltage
VBG(UV) Low supply threshold voltage12 4.2 5.5 V
∆VBG(UV) Hysteresis - 0.5 - V
Overvoltage
VBG(OV) High supply threshold voltage240 45 50 V
∆VBG(OV) Hysteresis - 1 - V
TRUTH TABLE
ABNORMAL CONDITIONS
DETECTED LOAD
INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION
UV OV LC SC OT
L X X X X X OFF H off
H 0 0 0 0 0 ON H on & normal
H 0 0 1 0 0 ON L on & low current detect
H 1 0 X X X OFF H supply undervoltage lockout
H 0 1 X 0 0 OFF H supply overvoltage shutdown
H 0 0 0 1 X OFF L SC tripped
H 0 0 0 0 1 OFF L OT shutdown3
KEY TO ABBREVIATIONS
L logic low UV undervoltage
H logic high OV overvoltage
X don’t care LC low current or open circuit load
0 condition not present SC short circuit
1 condition present OT overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
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Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R
OVERLOAD PROTECTION CHARACTERISTICS
5.5 V ≤VBG ≤35 V, limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Overload protection VBL = VBG
IL(lim) Load current limiting VBG ≥9 V 6 9 12 A
Short circuit load protection
VBL(TO) Battery load threshold voltage1VBG = 16 V 8 10 12 V
VBG = 35 V 15 20 25 V
td sc Response time2VBL > VBL(TO) - 180 250 µs
Overtemperature protection
Tj(TO) Threshold junction 150 170 190 ˚C
temperature3
∆Tj(TO) Hysteresis - 10 - ˚C
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, 9 V ≤VBG ≤16 V, for resistive load RL= 13 Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on to VIG = 5 V
td on Delay time to 10% VL-2840µs
dV/dton Rate of rise of load voltage 30% to 70% VL- 0.75 1 V/µs
t on Total switching time to 90% VL-6090µs
During turn-off to VIG = 0 V
td off Delay time to 90% VL-3654µs
dV/dtoff Rate of fall of load voltage 70% to 30% VL- 0.75 1 V/µs
t off Total switching time to 10% VL-6090µs
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cig Input capacitance VBG = 13 V - 15 20 pF
Cbl Output capacitance VBL = 13 V - 100 140 pF
Csg Status capacitance VSG = 5 V - 11 15 pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has
operated, the input voltage must be toggled low for the switch to resume normal operation.
2 Measured from when the input goes high.
3 After cooling below the reset temperature the switch will resume normal operation.
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Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R
MECHANICAL DATA
Fig.4. SOT426 surface mounting package1, centre pin connected to mounting base.
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT426
0 2.5 5 mm
scale
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads
(one lead cropped) SOT426
e e ee
E
b
A1
A
A1Lp
bcD
max. e
A
UNIT
DIMENSIONS (mm are the original dimensions)
E
11
mm 4.50
4.10 1.40
1.27 0.85
0.60 0.64 0.46 2.90 2.10
HD
15.80
14.80
Q
2.60
2.20
10.30
9.70
D1
1.60
1.20 1.70
98-12-14
99-06-25
1
3
24 5
mounting
base
D1
HD
D
Q
Lp
c
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
July 2001 7 Rev 1.000

Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS1STATUS2
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
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The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
available on the Internet at URL http://www.semiconductors.philips.com.
July 2001 8 Rev 1.000