Philips BUK205-50Y User manual

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MIN. UNIT
overload protected power switch
based on MOSFET technology in a ILNominal load current (ISO) 6 A
5 pin plastic surface mount
envelope, configured as a single
high side switch. SYMBOL PARAMETER MAX. UNIT
APPLICATIONS VBG Continuous off-state supply voltage 50 V
ILContinuous load current 15 A
General controller for driving TjContinuous junction temperature 150 ˚C
lamps, motors, solenoids, heaters. RON On-state resistance 60 mΩ
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1Ground
2Input
3 (connected to mb)
4Status
5Load
Fig. 2. Fig. 3.
mb Battery
BATT
LOAD
INPUT
GROUND
STATUS POWER
MOSFET
RG
CONTROL &
PROTECTION
CIRCUITS
mb
12 45
3
B
G
L
I
S
HSS
TOPFET
July 1996 1 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Battery voltages
VBG Continuous off-state supply voltage - 0 50 V
Reverse battery voltages1External resistors:
-VBG Repetitive peak supply voltage RI= RS≥4.7 kΩ, δ≤0.1 - 32 V
-VBG Continuous reverse supply voltage RI= RS≥4.7 kΩ-16V
I
LContinuous load current Tmb ≤115 ˚C - 15 A
PDTotal power dissipation Tmb ≤25 ˚C - 83.3 W
Tstg Storage temperature - -55 175 ˚C
TjContinuous junction temperature2- - 150 ˚C
Tsold Lead temperature during soldering - 250 ˚C
Input and status
IIContinuous input current - -5 5 mA
ISContinuous status current - -5 5 mA
IIRepetitive peak input current δ≤0.1 -20 20 mA
ISRepetitive peak status current δ≤0.1 -20 20 mA
Inductive load clamping
EBL Non-repetitive clamping energy Tmb = 150 ˚C prior to turn-off - 1.2 J
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCElectrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
THERMAL CHARACTERISTIC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance3
Rth j-mb Junction to mounting base - - 1.2 1.5 K/W
1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2 For normal continuous operation. A higher Tjis allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
3 Of the output Power MOS transistor.
July 1996 2 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
VBG Battery to ground IG= 1 mA 50 55 65 V
VBL Battery to load IL= IG= 1 mA 50 55 65 V
-VLG Negative load to ground IL= 1 mA 12 17 21 V
Supply voltage battery to ground
VBG Operating range1-5-40V
Currents VBG = 13 V
ILNominal load current2VBL = 0.5 V; Tmb = 85 ˚C 6 - - A
IBQuiescent current3VIG = 0 V; VLG = 0 V - 0.1 2 µA
IGOperating current4VIG = 5 V; IL= 0 A 1.5 2.2 4 mA
ILOff-state load current5VBL = 13 V; VIG = 0 V - 0.1 1 µA
Resistances
RON On-state resistance6VBG = 13 V; IL= 7.5 A; tp= 300 µs - 45 60 mΩ
RON On-state resistance VBG = 5 V; IL= 1.5 A; tp= 300 µs - 70 90 mΩ
RGInternal ground resistance IG= 10 mA - 150 - Ω
INPUT CHARACTERISTICS
Tmb = 25 ˚C; VBG = 13 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IIInput current VIG = 5 V 35 60 100 µA
VIG Input clamping voltage II= 200 µA 6 7.5 8.5 V
VIG(ON) Input turn-on threshold voltage - 2.1 2.7 V
VIG(OFF) Input turn-off threshold voltage 1.5 2 - V
1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tprefers only to the applied load current.
July 1996 3 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
PROTECTION FUNCTIONS AND STATUS INDICATIONS
Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS TRUTH TABLE THRESHOLD
SYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT
Normal on-state 1 1 1
Normal off-state 0 1 0
IL(OC) Open circuit load11 0 1 100 350 600 mA
Open circuit load 0 1 0
Tj(TO) Over temperature21 0 0 150 175 - ˚C
Over temperature300 0
V
BL(TO) Short circuit load41 0 0 9 10.5 12 V
Short circuit load 0 1 0
VBG(TO) Low supply voltage5X1 0345V
V
BG(LP) High supply voltage6X1 0404550V
For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care.
For status ‘0’ equals low, ‘1’ equals open or high.
For output switch ‘0’ equals off, ‘1’ equals on.
STATUS CHARACTERISTICS
Tmb = 25 ˚C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VSG Status clamping voltage IS= 100 µA; VIG = 0 V 6 7 8 V
VSG Status low voltage IS= 50 µA; VBG = 13 V; VIG = 5 V - 0.7 0.8 V
ISStatus leakage current VSG = 5 V - 0.1 1 µA
ISStatus saturation current7VSS = 5 V; RS= 0 Ω; VBG = 13 V - 5 - mA
Application information
RSExternal pull-up resistor8VSS = 5 V - 100 - kΩ
1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication
only. Typical hysteresis equals 140 mA. The thresholds are specified for supply voltage within the normal working range.
2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by
typically 10 ˚C.
3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,
providing the device has not cooled below the reset temperature.
4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V.
6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V.
7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8 The pull-up resistor also protects the status pin during reverse battery conditions.
July 1996 4 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C; VBG = 13 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Inductive load turn-off
-VLG Negative load voltage1VIG = 0 V; IL= 7.5 A; tp= 300 µs152025V
Short circuit load protection2VIG = 5 V; RL≤10 mΩ
td sc Response time - 90 - µs
ILLoad current prior to turn-off t < td sc -42- A
Overload protection3
IL(lim) Load current limiting VBL = 9 V; tp= 300 µs284052A
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL= 13 Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on to VIG = 5 V
td on Delay time to 10% VL-16-µs
dV/dton Rate of rise of load voltage - 1 2.5 V/µs
t on Total switching time to 90% VL-40-µs
During turn-off to VIG = 0 V
td off Delay time to 90% VL-30-µs
dV/dtoff Rate of fall of load voltage - 1.2 2.5 V/µs
t off Total switching time to 10% VL-50-µs
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cig Input capacitance VBG = 13 V - 15 20 pF
Cbl Output capacitance VBL = VBG = 13 V - 415 580 pF
Csg Status capacitance VSG = 5 V - 11 15 pF
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than VBL(TO), the device remains in
current limiting until the overtemperature protection operates.
July 1996 5 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.
P
D
% = 100 ⋅ P
D
/P
D
(25 ˚C) = f(T
mb
)
Fig.6. Limiting continuous on-state load current.
I
L
= f(T
mb
); conditions: V
IG
= 5 V, V
BG
= 13 V
Fig.7. Typical on-state characteristics, T
j
= 25 ˚C.
I
L
= f(V
BL
); parameter V
BG
; t
p
= 250 µ s
Fig.8. Typical on-state resistance, T
j
= 25 ˚C.
R
ON
= f(V
BG
); conditions: I
L
= 7.5 A; t
p
= 300 µ s
Fig.9. Typical on-state resistance, t
p
= 300 µ s.
R
ON
= f(T
j
); parameter V
BG
; condition I
L
= 1.5 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS IL
VBG
VIG VSG RS
VLG
LOAD
VBL
0 0.5 1 1.5 2
0
10
20
30
40 BUK205-50Y
VBL / V
IL / A
6
7
13
5
VBG / V =
0 20 40 60 80 100 120 140
Tmb / C
PD% Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1 10 100
0
10
20
30
40
50
60
70
80
90
100 BUK205-50Y
VBG / V
RON / mOhm
0 50 100 150
0
5
10
15
20 BUK205-50Y
Tmb / C
IL / A BUK205-50Y
Tmb / C
-60 -20 20 60 100 140 180
RON / mOhm
0
50
100
150
VBG = 5 V
13 V
typ.
July 1996 6 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.10. Typical supply characteristics, 25 ˚C.
I
G
= f(V
BG
); parameter V
IG
Fig.11. Typical operating supply current.
I
G
= f(T
j
); parameter V
BG
; condition V
IG
= 5 V
Fig.12. Typical supply quiescent current.
I
B
= f(T
j
); condition V
BG
= 13 V, V
IG
= 0 V, V
LG
= 0 V
Fig.13. Typical off-state leakage current.
I
L
= f(T
j
); conditions: V
BL
= 13 V = V
BG
; V
IG
= 0 V.
Fig.14. Typical input characteristics, T
j
= 25 ˚C.
I
I
= f(V
IG
); parameter V
BG
Fig.15. Typical input current, T
j
= 25 ˚C.
I
I
= f(V
BG
); condition V
IG
= 5 V
0 20 40 60
VBG / V
IG / mA BUK205-50Y
5
4
3
2
1
0
OPERATING
QUIESCENT
CLAMPING
HIGH VOLTAGE
10 30 50
VIG = 3 V
VIG = 0 V
-60 -20 20 60 100 140 180
Tj / C
IL BUK205-50Y
100 uA
10 uA
1 uA
100 nA
10 nA
1 nA
-60 -20 20 60 100 140 180
Tj / C
IG / mA BUK205-50Y
3
2
1
0
VBG / V =
13
50
0 2 4 6 8
VIG / V
II / uA BUK205-50Y
200
150
100
50
0
VBG / V = 5
7
13
-60 -20 20 60 100 140 180
Tj / C
IB BUK205-50Y
100 uA
10 uA
1 uA
100 nA
10 nA
0 20 40
VBG / V
II / uA BUK205-50Y
100
80
60
40
20
0 10 30 50
July 1996 7 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.16. Typical input threshold voltages.
V
IG
= f(T
j
); conditions V
BG
= 13 V, I
L
= 80 mA
Fig.17. Typical input clamping voltage.
V
IG
= f(T
j
); conditions I
I
= 200 µ A, V
BG
= 13 V
Fig.18. Typical status characteristic, T
j
= 25 ˚C.
I
S
= f(V
SG
); conditions V
IG
= V
BG
= 0 V
Fig.19. Typical status leakage current.
I
S
= f(T
j
); conditions V
SG
= 5 V, V
IG
= V
BG
= 0 V
Fig.20. Typical status low characteristic, T
j
= 25 ˚C.
I
S
= f(V
SG
); conditions V
IG
= 5 V, V
BG
= 13 V, I
L
= 0 A
Fig.21. Typical status low voltage, V
SG
= f(T
j
).
conditions I
S
= 50 µ A, V
IG
= 5 V, V
BG
= 13 V, I
L
= 0 A
-60 -20 20 60 100 140 180
Tj / C
VIG / V BUK205-50Y
3.0
2.5
2.0
1.5
1.0
VIG(ON)
VIG(OFF)
-60 -20 20 60 100 140 180
Tj / C
IS BUK205-50Y
10 uA
1 uA
100 nA
10 nA
-60 -20 20 60 100 140 180
Tj / C
VIG / V BUK205-50Y
8.0
7.5
7.0
6.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VSG / V
IS / uA BUK205-50Y
500
400
300
200
100
0
0 2 4 6 8 10
VSG / V
IS / mA BUK205-50Y
20
15
10
5
0
-60 -20 20 60 100 140 180
Tj / C
VSG / V BUK205-50Y
1
0.8
0.6
0.4
0.2
0
July 1996 8 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.22. Typical status clamping voltage, V
SG
= f(T
j
).
parameter V
IG
; conditions I
S
= 100 µ A, V
BG
= 13 V
Fig.23. Low load current detection threshold.
I
L(OC)
= f(T
j
); conditions V
IG
= 5 V; V
BG
= 13 V
Fig.24. Supply typical undervoltage thresholds.
V
BG(TO)
= f(T
j
); conditions V
IG
= 3 V; I
L
= 80 mA
Fig.25. Supply typical overvoltage thresholds.
V
BG(LP)
= f(T
j
); conditions V
IG
= 5 V; I
L
= 80 mA
Fig.26. Typical battery to ground clamping voltage.
V
BG
= f(T
j
); parameter I
G
Fig.27. Typical negative load clamping characteristic.
I
L
= f(V
LG
); conditions V
IG
= 0 V, t
p
= 300 µ s, 25 ˚C
-60 -20 20 60 100 140 180
Tj / C
VSG / V BUK205-50Y
8.0
7.5
7.0
6.5
5
VIG / V =
0
-60 -20 20 60 100 140 180
Tj / C
VBG(LP) / V BUK205-50Y
47
46
45
44
43
on
off
-50 0 50 100 150 200
0
100
200
300
400
500
600
700
800 BUK205-50Y
Tmb / C
IL(OC) / mA
max.
min.
typ.
-60 -20 20 60 100 140 180
Tj / C
VBG / V BUK205-50Y
65
60
55
50
10 uA
1 mA
IG =
-60 -20 20 60 100 140 180
Tj / C
VBG(TO) / V BUK205-50Y
5
4
3
2
1
0
on
off
-25 -20 -15 -10 -5 0
0
5
10
15
20
25
30 BUK205-50Y
VLG / V
IL / A
July 1996 9 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch BUK205-50Y
SMD version of BUK201-50Y
Fig.28. Typical negative load clamping voltage.
V
LG
= f(T
j
); parameter I
L
; condition V
IG
= 0 V.
Fig.29. Typical battery to load clamping voltage.
V
BL
= f(T
j
); parameter I
L
; condition I
G
= 5 mA.
Fig.30. Typical reverse battery characteristic.
I
G
= f(V
BG
); conditions I
L
= 0 A, T
j
= 25 ˚C
Fig.31. Typical reverse diode characteristic.
I
L
= f(V
BL
); conditions V
IG
= 0 V, T
j
= 25 ˚C
Fig.32. Typical output capacitance. T
mb
= 25 ˚C
C
bl
= f(V
BL
); conditions f = 1 MHz, V
IG
= 0 V
Fig.33. Typical overload characteristic, T
mb
= 25 ˚C.
I
L
= f(V
BL
); condition V
BG
= 13 V; parameter t
p
-60 -20 20 60 100 140 180
Tj / C
VLG / V BUK205-50Y
-22
-20
-18
-16
-14
-12
-10
7.5 A
1 mA
IL =
tp = 300 us
-1.2 -1 -0.8 -0.6 -0.4 -0.2 0
-40
-30
-20
-10
0BUK205-50Y
VLB / V
IL / A
-60 -20 20 60 100 140 180
Tj / C
VBL / V BUK205-50Y
65
60
55
50
100 uA
1 mA
4 A
IL =
tp = 300 us
0 1020304050
100 pF
1 nF
10 nF BUK205-50Y
VBL / V
Cbl
-20 -10 0
VBG / V
IG / mA BUK205-50Y
0
-50
-100
-150 -15 -5
0 5 10 15 20 25
0
10
20
30
40
50
60 BUK205-50Y
VBL / V
IL / A
VBL(TO) typ.
tp =
300 us
current limiting
i.e. before short
circuit load trip
50 us
July 1996 10 Rev 1.000