Philips BUK218-50DC User manual

Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DC
QUICK REFERENCE DATA
DESCRIPTION
Monolithic dual channel high side SYMBOL PARAMETER MIN. UNIT
protected power switch in
TOPFET2 technology assembled in ILNominal load current (ISO) 8 A
a 7 pin plastic surface mount
package. SYMBOL PARAMETER MAX. UNIT
APPLICATIONS VBG Continuous off-state supply voltage 50 V
General purpose switch for driving ILContinuous load current 16 A
lamps, motors, solenoids, heaters. TjContinuous junction temperature 150 ˚C
RON On-state resistance, Tj= 25˚C 40 mΩ
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Overload and
short circuit protection
Self resetting overcurrent
protection
Overvoltage and undervoltage
shutdown with hysteresis
Off-state open circuit
load detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
Fig.1. Elements of the TOPFET dual HSS with internal ground resistor.
PINNING - SOT427 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 load 1
2 ground
3 input 1
4 connected to mb
5 status
6 input 2
7 load 2
mb battery Fig. 2. Fig. 3.
CONVENTION
Positive currents flow into pins, except for load and ground pins.
STATUS
GROUND
INPUT 2
RG
CONTROL &
PROTECTION
CIRCUITS
INPUT 1
LOAD 1
BATT
LOAD 2
1234567
mb
I1
I2
L1
L2
G
B
S
DUAL
HSTF
October 2001 1 Rev 2.010

Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DC
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VBG Continuous supply voltage 0 50 V
ILContinuous load current per channel Tmb ≤135˚C - 8 A
PDTotal power dissipation Tmb ≤25˚C - 83.3 W
Tstg Storage temperature -55 175 ˚C
TjContinuous junction temperature1-40 150 ˚C
Reverse battery voltages2
VGB Continuous reverse voltage - 16 V
VGB Peak reverse voltage - 32 V
Application information
RI, RSExternal resistors3to limit input, status currents 3.2 - kΩ
Input and status currents
IIContinuous input current -5 5 mA
ISContinuous status current -5 5 mA
IIRepetitive peak input current δ≤0.1, tp= 300 µs -50 50 mA
ISRepetitive peak status current δ≤0.1, tp= 300 µs -50 50 mA
Inductive load clamping VBG = 13 V, IL= 8 A
EBL Non-repetitive clamping energy (one Tj= 150˚C prior to turn-off - 150 mJ
channel)
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCElectrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
1 For normal continuous operation. A higher Tjis allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to ensure that the input and status currents do not exceed the limiting values.
The internal ground resistor limits the reverse battery ground current. The connected loads must limit the reverse load currents. Power
is dissipated and the Tjrating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
October 2001 2 Rev 2.010

Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DC
THERMAL CHARACTERISTIC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance1
Rth j-mb Junction to mounting base per channel - 2.4 3 K/W
both channels - 1.2 1.5 K/W
STATIC CHARACTERISTICS
Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
VBG Battery to ground IG= 1 mA 45 55 65 V
VBL Battery to load per channel IL= IG= 1 mA 50 55 65 V
VGL Ground to load2IL= 10 mA 18 23 28 V
IL= 10 A; tp= 300 µs202530V
Supply voltage battery to ground
VBG Operating range3- 5.5 - 35 V
Currents 9 V ≤VBG ≤35 V
IBTotal quiescent current4VLG = 0 V - - 20 µA
Tmb = 25˚C - 0.1 1 µA
ILOff-state load current per VBL = VBG --10µA
channel Tmb = 25˚C - 0.1 1 µA
IGOperating current one channel on - 1.8 3 mA
both channels on - 3.6 6 mA
ILNominal load current5VBL = 0.5 V; Tmb = 85˚C 8 - - A
RGEffective internal ground IG= -200 mA; tp= 300 µs 40 75 100 Ω
resistance6
Resistances per channel VBG ILtp7Tj
RON On-state resistance 9 to 35 V 10 A 300 µs 25˚C - 30 40 mΩ
150˚C - 60 80 mΩ
RON On-state resistance 5.5 V 5 A 300 µs 25˚C - 50 60 mΩ
150˚C - 100 120 mΩ
1 Of the output Power MOS transistors.
2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
3 On-state resistance is increased if the supply voltage is less than 7 V.
4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.
5 Per channel but with both channels conducting. Defined as in ISO 10483-1.
6 Equivalent of the parallel connected resistors for both channels.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tprefers only to the applied load current.
October 2001 3 Rev 2.010

Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DC
INPUT CHARACTERISTICS
5.5 V ≤VBG ≤35 V. Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IIInput current VIG = 5 V 20 60 160 µA
VIG Input clamping voltage II= 200 µA 5.5 7 8.5 V
VIG(ON) Input turn-on threshold voltage - 2.1 3 V
VIG(OFF) Input turn-off threshold voltage 1.2 1.8 - V
∆VIG Input turn-on hysteresis 0.15 0.3 0.5 V
II(ON) Input turn-on current VIG = 3 V - - 100 µA
II(OFF) Input turn-off current VIG = 1.2 V 12 - - µA
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load on either channel can be detected in the off-state. Refer to TRUTH TABLE.
This feature requires external load pull-up to a positive supply voltage via a suitable resistor.
Limits are at -40˚C ≤Tmb ≤150˚C and typical is at Tmb = 25˚C.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Open circuit detection
VLG(OC) Load ground threshold voltage VBG ≥9 V 1.5 2.5 3.5 V
IB(OC) Supply quiescent current per VBG = VLG = 16 V - 0.8 1.5 mA
OC channel open circuit detected,
other channel off
-IL(OC) Load ground current per VLG = 16 V - 200 300 µA
channel VLG = 3.5 V - 22 40 µA
td(OC) Status delay time input low to status low - 65 100 µs
Application information
Rext External load pull-up resistance Vext = 5 V - 10 - kΩ
per channel
October 2001 4 Rev 2.010

Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DC
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Undervoltage
VBG(UV) Low supply threshold voltage12 4.2 5.3 V
∆VBG(UV) Hysteresis 0.1 0.5 1 V
Overvoltage
VBG(OV) High supply threshold voltage235 40 45 V
∆VBG(OV) Hysteresis 0.4 1 2 V
IBG(OV) Operating current per channel VBG > VBG(OV) -12mA
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to TRUTH TABLE.
5.5 V ≤VBG ≤35 V, limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Overload protection VBL = VBG; tp= 300 µs
IL(lim) Load current limiting VBG ≥8 V 18 30 42 A
VBG = 5.5 V 15 27 42 A
Short circuit load protection Tmb ≤125˚C prior to overload3
PD(TO) Overload power threshold for protection4100 150 200 W
TDSC Characteristic time which determines trip time5- 200 500 µs
Overtemperature protection
Tj(TO) Threshold junction temperature 150 170 190 ˚C
∆Tj(TO) Hysteresis63 1020˚C
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 Normal operation will be resumed when PD< PD(TO) and Tj< Tj(TO).
5 Trip time td sc varies with overload dissipation PDaccording to the exponential model formula td sc ≈TDSC / LN[ PD/ PD(TO) ].
6 After cooling below the reset temperature the channel will resume normal operation.
October 2001 5 Rev 2.010

Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DC
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VSG Status clamping voltage IS= 100 µA 5.5 7 8.5 V
VSG(LO) Status low voltage IS= 100 µA - 0.7 0.9 V
IS= 250 µA - - 1.1 V
ISStatus leakage current VSG = 5 V - - 10 µA
Tmb = 25˚C - 0.1 1 µA
IS(SAT) Status saturation current1VSG = 5 V 5 10 15 mA
Application information
RSExternal pull-up resistor - 47 - kΩ
TRUTH TABLE
ABNORMAL CONDITIONS LOAD
INPUT DETECTED OUTPUT STATUS DESCRIPTION
SUPPLY LOAD 1 LOAD 2
1 2 UV OV OC SC OT OC SC OT 1 2
L L 0 X 0 X X 0 X X OFF OFF H both off & normal
L L 0 X 1 X X X X X OFF OFF L both off, one/both OC or short to V+
L H 0 X 1 X X 0 0 0 OFF ON L one off & OC, other on & normal
H L 0 0 0 0 0 0 0 0 ON OFF H one on & normal, other off & normal
H H 0 0 0 0 0 0 0 0 ON ON H both on & normal
H X 1 0 X X X 0 X X OFF OFF H supply undervoltage lockout
H X 0 1 X 0 0 X 0 0 OFF OFF H supply overvoltage shutdown
H X 0 0 0 1 X X X X OFF X L one SC shutdown
H L 0 0 0 1 X 0 0 X OFF OFF L one SC shutdown, other off & normal
H H 0 0 0 1 X 0 0 0 OFF ON L one SC shutdown, other on & normal
H X 0 0 0 0 1 X X X OFF X L one OT shutdown
H L 0 0 0 0 1 0 0 X OFF OFF L one OT shutdown, other off & normal
H H 0 0 0 0 1 0 0 0 OFF ON L one OT shutdown, other on & normal
KEY TO ABBREVIATIONS
L logic low UV undervoltage
H logic high OV overvoltage
X don’t care OC open circuit
0 condition not present SC short circuit
1 condition present OT overtemperature
1 For example with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
October 2001 6 Rev 2.010

Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DC
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL= 13 Ωper channel.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on from input going high
td on Delay time to 10% VL-30-µs
dV/dton Rate of rise of load voltage 30% to 70% VL0.5 1 2 V/µs
t on Total switching time to 90% VL- 100 400 µs
During turn-off from input going low
td off Delay time to 90% VL-20-µs
dV/dtoff Rate of fall of load voltage 70% to 30% VL0.5 1 2 V/µs
t off Total switching time to 10% VL- 40 200 µs
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Csg Status capacitance VSG = 5 V - 11 15 pF
per channel
Cig Input capacitance VBG = 13 V - 15 20 pF
Cbl Output capacitance VBL = 13 V - 265 375 pF
October 2001 7 Rev 2.010

Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DC
MECHANICAL DATA
Fig.4. SOT427 surface mounting package1, centre pin connected to mounting base.
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT427
0 2.5 5 mm
scale
Plastic single-ended surface mounted package (Philips version of D2-PAK);
7 leads (one lead cropped) SOT427
eeeeee
E
b
A1
A
A1Lp
bc e
A
UNIT
DIMENSIONS (mm are the original dimensions)
E
mm 4.50
4.10 1.40
1.27 0.85
0.60 0.64 0.46 2.90 2.10
HD
15.80
14.80
Q
2.60
2.20
10.30
9.70
D1
1.60
1.20 1.27
D
max.
11
1
4
7
mounting
base
D1
HD
D
Q
Lp
c
99-06-25
01-04-18
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
October 2001 8 Rev 2.010

Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DC
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS1STATUS2
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
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The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
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LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
available on the Internet at URL http://www.semiconductors.philips.com.
October 2001 9 Rev 2.010